The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

shockley diode datasheet Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
shockley diode application

Abstract: shockley diode shockley diode applications 1N3835 1N3837 2sc 945 p transistor diode shockley shockley diode high voltage and high current shockley clevite
Text: CATALOG OF 4-LAYER DIODES CLEVITEj SHOCKLEY TRANSISTOR 1 SOI RAGE MILL ROAD « PALO ALTO. CAUK. General Information and Introduction to the Shockley 4-Layer Diode _ft The Shockley 4-layer diode is a two , suitable impurities. The symbol for the Shockley 4-layer diode is a modified "4". The slant line of the "4" , damage the device. ! N P N P 1 Conventional Current Flow ¿_ Symbol for the Shockley 4-layer diode , -layer diode is turned OFF by reducing the current flowing through the device below holding current (Ih).


OCR Scan
PDF 8000/nominal shockley diode application shockley diode shockley diode applications 1N3835 1N3837 2sc 945 p transistor diode shockley shockley diode high voltage and high current shockley clevite
shockley diode

Abstract: shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer IN3831 IN3833 00Lm
Text: www. Datasheet . i n MICROWAVE DI O DE i r> 1 M3831 TURnilRH I ^ ^^ II 1 nnuuun. N3846 SILICON PLANAR THYRISTOR DIODES Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 , :603Ì 246-3362 ' i ; www.Datasheet, in FOUR LAYER DIODE CHARACTERISTICS PARAMETER VARIATIONS WITH , voltage is applied to the diode dV increases, the voltage required to switch the diode decreases: dt A typical plot of this is as follows: Vs Voltage required to switch the diode .01 .1 dV dt (V//US) 10


OCR Scan
PDF M3831 N3846 IN3831 IN3832 IN3833 IN3834 IN3835 IN3836 IN3837 IN3838 shockley diode shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer 00Lm
shockley diode

Abstract: shockley shockley diode application diode shockley shockley diode datasheet electrical bell working principle transistor a 1941 nj TRANSISTOR Germanium rectifier Electron Research
Text: Brattain, and Dr. William Shockley discovered the transistor effect and developed the first device in , leadership of Stanley Morgan and William Shockley ," Dr. Bardeen once related. "Following a Ph.D. under , friends with James B. Fisk, who in 1945 was director of research at Bell Labs. Bardeen also knew Shockley , , a year or so later, Shockley came to me with an idea of making an amplifier out of copper oxide , . William Shockley (1910-1989) The brilliant director of the transistor effort, Dr. William Shockley


Original
PDF
shockley

Abstract: 4E20-28 395 transistor clevite 4E20-8 4G200M 4e20m-8 4E30-8 4J50-25 4E20A
Text: individual item on orders with more than one item. SHOCKLEY SILICON POWER TRANSISTOR 3TX TYPE 1-99 100-499 , Clevite/ Shockley warranty and terms and conditions of sale. \


OCR Scan
PDF 4E20M-8 4E20M-28 4E30M-8 4E30M-28 4E40M-8 4E40M-28 4E50M-8 4E50M-28 4E100M-8 4E100M-28 shockley 4E20-28 395 transistor clevite 4E20-8 4G200M 4E30-8 4J50-25 4E20A
2004 - 1N5160

Abstract: shockley diode diode shockley shockley LM3909N
Text: 1N5160 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Category » Thyristors Class » Triggers and Switches Type » Four-Layer Diodes; ( Shockley Diodes) 1N5160 Availability Buy 1N5160 at our online store! Special Offers: FREE UPS Ground Shipping on , -Apr-2011 1N5160 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integra. Page 2 of 2


Original
PDF 1N5160 1N5160 12-Apr-2011 STV3208 LM3909N LM3909 shockley diode diode shockley shockley
shockley diode

Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
Text: MICROWAVE DIODE , i ^ IN3831 CORPORATION ^^ IN3846 SILICON PLANAR THYRISTOR DIODES Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 , S flOlJ"E 3 BOX 250 Wf i>T STEWARTS! OWN NE A* HAMPSHIRE 03597 •603> 3362 * FOUR LAYER DIODE , raised. UNSPECIFIED PARAMETERS RATE EFFECT. As the rate at which voltage is applied to the diode dV increases, the voltage required to switch the diode decreases: dt A typical plot of this is as follows: Vs


OCR Scan
PDF IN3831 IN3846 IN3832 IK3833 IN3834 IK3835 IN3836 IN3837 IN3838 shockley diode diode shockley shockley 1n3842 shockley diode 1N3842
shockley diode

Abstract: diode shockley shockley diode application optotriac C18156 shockley Optocoupler with triac circuits microwave oven microcontroller Four Layer diode Shockley Diode optotriac IL4218
Text: TRIACs. All of these devices originate from the four layer diode (also known as the Shockley diode ) the four layer diode is represented in Figure 5 symbolically, and more importantly functionally , ) (c) (d) 18131 Figure 5. Four Layer diode ( Shockley Diode ) The most important portion of


Original
PDF H11C4 H11C5 H11C6 IL400 24-Nov-03 shockley diode diode shockley shockley diode application optotriac C18156 shockley Optocoupler with triac circuits microwave oven microcontroller Four Layer diode Shockley Diode optotriac IL4218
shockley diode

Abstract: opto triac shockley diode application diode shockley four-layer diode optotriac shockley shockley diode datasheet 2 amp triac driver opto optotriac IL4218
Text: TRIACs. All of these devices originate from the four-layer diode (also known as the Shockley diode ). The four-layer diode is represented in figure 5 symbolically, and more importantly, functionally , -May-08 18131 (a) (b) (c) (d) Fig. 4 - Four-Layer Diode ( Shockley Diode ) For technical questions


Original
PDF H11C5 H11C4 H11C6 IL400 06-May-08 shockley diode opto triac shockley diode application diode shockley four-layer diode optotriac shockley shockley diode datasheet 2 amp triac driver opto optotriac IL4218
1997 - shockley diode application

Abstract: shockley diode diode shockley transistor bipolar driver schematic shockley diode SPICE MODELS spice shockley diode BF 494 C AP 494 Application Note shockley diode datasheet SPICE MODELS
Text: current IC (ideally) follows the Shockley eq uati on th at defines the c ur rent through a P-N junction , saturation, satisfied by VBC = 0 , ( or VCE= VBE). The collector current IC (ideally) follows the Shockley , to predict the IC value from the basic Shockley equation, at any value of VCE. This allows the , basic Shockley equation, at any value of VCE. This allows the model to behave as expected in the , MOSFETs. (Please refer to Figure 5 for an example of a variable capacitance diode with options


Original
PDF 1970s. F632-79. shockley diode application shockley diode diode shockley transistor bipolar driver schematic shockley diode SPICE MODELS spice shockley diode BF 494 C AP 494 Application Note shockley diode datasheet SPICE MODELS
1997 - shockley diode

Abstract: shockley diode application shockley diode datasheet diode shockley n-channel enhancement mode vmos power fet shockley shockley diode applications megamos 13 advantage and disadvantage of mosfet vmos fet
Text: MicroNote Series 901 by Dan Tulbure, Microsemi Santa Ana Introduction to Power MOSFETs What is a Power MOSFET? We all know how to use a diode to implement a switch. But we can only switch with it, not gradually control the signal flow. Furthermore, a diode acts as a switch depending on , concept) came soon after, in 1948 from another pair of illustrious parents: Shockley and Pearson. The , , it acts as a clamping diode in inductive load switching applications at no extra cost. MOSFET


Original
PDF O-250 shockley diode shockley diode application shockley diode datasheet diode shockley n-channel enhancement mode vmos power fet shockley shockley diode applications megamos 13 advantage and disadvantage of mosfet vmos fet
2005 - Logarithmic Amplifier

Abstract: Logarithmic SLYT088 shockley diode application shockley diode shockley diode applications diode shockley pic pid ccs power factor PIC circuit TEXAS INSTRUMENTS laser driver
Text: correction factor, m, takes into account the deviation between the diode characteristic and Shockley , inverting amplifier with a feedback diode . With the diode being virtually anode-grounded, the op amp needs to generate a negative output voltage to forward bias the diode . For a given input current, IIN, the , between the voltage and current of a forward-biased diode . Figure 2 shows the characteristic of the , ) Figure 3. Log amp with diode (1) VF where VF and IF are the forward voltage and forward current


Original
PDF SLYT088 Logarithmic Amplifier Logarithmic SLYT088 shockley diode application shockley diode shockley diode applications diode shockley pic pid ccs power factor PIC circuit TEXAS INSTRUMENTS laser driver
2012 - shockley diode application

Abstract: IP4294CZ10-TBR IP4294
Text: high-level ESD protection diode structures for ultra high-speed signal lines and is encapsulated in an ultra small and leadless XSON10 plastic package. All signal lines are protected by a special diode , , the ground diodes between each channel and ground pins 3 and 8 are implemented as Shockley diodes


Original
PDF IP4294CZ10-TBR XSON10 shockley diode application IP4294CZ10-TBR IP4294
2008 - thyristor scr oscillator circuit

Abstract: shockley diode DIAC EQUIVALENT circuit diac with triac ac speed control SCHEMATIC circuit scr oscillator shockley diode application DIAC EQUIVALENT scr firing METHODS Thyristor Shockley diac triac control circuit motor
Text: ) Reverse Biased Gate Junction N P Anode Equivalent Diode Relationship Forward Bias and , Reverse Biased Junction (-) Anode Equivalent Diode Relationship J2 N Figure AN1001 , Junction MT1(-) GATE(-) IGT Gate P MT2(+) N P MT1 Equivalent Diode Relationship , N Blocking Junction P N P N MT2(-) MT2(-) IT Equivalent Diode , AN1001.7 illustrates its equivalent block construction using two Shockley diodes connected inverse


Original
PDF
1995 - P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldeffect transistor (FET) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the fieldeffect transistor was known as a unipolar" transistor. The term refers to the fact that current is transported by


Original
PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
2012 - Not Available

Abstract: No abstract text available
Text: characteristics after a 934 hour repetitive avalanche stress test. Long-term operation of the Gate-Source diode , same charge passing through a SiC PiN diode as a DC or pulsed current causes fundamentally different , Open-Drain operation: In this work, long-term (15.8 hour) pulsed testing of the Gate-Source diode of a SiC , . Operation of the Gate-Source diode alone did not result in any change to the output characteristics , . Glembocki, R.E. Stahlbush, K.D. Hobart: Influence of Temperature on Shockley Stacking Fault Expansion and


Original
PDF 1557/opl
1997 - shockley diode

Abstract: shockley diode application diode shockley shockley shockley diode datasheet inverter circuits explained mosfet triggering circuit for inverter IGBT inverter calculation Semiconductor Group igbt shockley diode high voltage and high current
Text: a series diode . However, it is not possible to completely suppress transient reverse states of the IGBT, which are caused by the transient behavior of the diode (which shows forward and reverse , substituting the supplementary diode in different NPT-IGBT applications. There is an immense risk in these , as a series diode , which makes the internal antiparallel diode in the source junction of the MOSFET , series diode . Static Characteristic The blocking capability of the drain junction is dependent on the


Original
PDF
2011 - shockley diode applications

Abstract: Automotive qualified ESD protection shockley diode application
Text: ) interfaces against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode , plastic package. All signal lines are protected by a special diode configuration offering ultra low line , channel and ground pins 3 and 8 are implemented as Shockley diodes. XS ON 1.2 Features and


Original
PDF IP4294CZ10-TBR XSON10 shockley diode applications Automotive qualified ESD protection shockley diode application
2012 - shockley diode application

Abstract: IP4294 DFN2510
Text: ) interfaces against ElectroStatic Discharge (ESD). The device includes four high-level ESD protection diode , -1) plastic package. All signal lines are protected by a special diode configuration offering ultra low line , channel and ground pins 3 and 8 are implemented as Shockley diodes. XS ON 1.2 Features and


Original
PDF IP4294CZ10-TBR DFN2510A-10 OT1176-1) shockley diode application IP4294 DFN2510
1996 - p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor (FET) has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the field-effect transistor was known as a "unipolar" transistor. The term refers to the fact that current is transported by


Original
PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Text: description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device


Original
PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
2012 - Not Available

Abstract: No abstract text available
Text: characteristics after a 934-h repetitive avalanche stress test. Long-term operation of the base–emitter diode , was reported in [11] that the same charge passing through a SiC PiN diode as a dc or pulsed current , current of 250 mA. In this paper, long-term (8 h) pulsed testing of the base– emitter diode of a SiC , diode shows a marked increase in the subthreshold region, indicating an increase to the recombination , base–emitter I–V characteristics, the base–collector diode shows a significantly lower current increase


Original
PDF 934-h
1999 - P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Text: description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device


Original
PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1998 - igbt spice model

Abstract: MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet shockley diode SIEMENS THYRISTOR spice shockley diode calculation of IGBT snubber IGBT THEORY AND APPLICATIONS
Text: the power semiconductor devices (IGBT and free wheeling diode ). Therefore the device has to dissipate , current transport in the n -region and a diode connected in + series models the emitter efficiency of the , diode between Rb and the collector terminal. B. Temperature Dependent Parameter All of the , connection of IGBTs [25]. The IGBT model in combination with a physics-based diode model [26] reproduces the , , Germany, Nov. 1993, pp. 17-25. [22] W. Shockley , "The theory of pn junctions in semiconductors and pn


Original
PDF D-81739 D-85577 29July igbt spice model MOSFET IGBT THEORY AND APPLICATIONS shockley diode application GTO thyristor Curve properties HIGH VOLTAGE 3.3kv mosfet shockley diode SIEMENS THYRISTOR spice shockley diode calculation of IGBT snubber IGBT THEORY AND APPLICATIONS
MIL-STD-806

Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b IC - TC4001BP shockley diode application mc14500
Text: ; Input protection diode KD7 -O OUT R ; Input protection resistor R HfH ÎÎD5 2ÎD6 D 3,Di,; Parasitic diode formed by P-channel MOS FET D 5,D6 ; Parasitic diode formed by N-channel MOS FET D7 ; Parasitic diode formed by P-wel1 Fig. 2-4 CMOS Inverter taking Parasitic Circuits into , basically approximated by Shockley 's equation. IDS = Id s = IDS = K [2Vd s (Vg s - VT ) K (VGS - VT , VALUE THEORETICAL VALUE BY SHOCKLEY ' S EQUATION 0 2 4 6 V IN (V) 6 INPUT VOLTAGE


OCR Scan
PDF
1996 - NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 NE24406 mw7721
Text: EFFECT TRANSISTOR (FET) In 1952, Shockley conceived the structure of the field effect type transistor , in high frequency performance. A GUNN diode made of silicon would be inconceivable, so the appearance of the contemporary GaAs FET contributed greatly to developing and commercializing the GUNN diode , electrical charge will pass through diode D1, and return quickly to the power source side, thus the FET can


Original
PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 NE24406 mw7721
Supplyframe Tracking Pixel