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ISL55033IRTZ Intersil Corporation 400MHz Slew Rate Enhanced Rail-to-Rail Output Gain Block; TQFN12; Temp Range: -40° to 85°C
ISL55033IRTZ-T13 Intersil Corporation 400MHz Slew Rate Enhanced Rail-to-Rail Output Gain Block; TQFN12; Temp Range: -40° to 85°C
ISL55036IRTZ Intersil Corporation 400MHz Slew Rate Enhanced Rail-to-Rail Output Gain Block; TQFN24; Temp Range: -40° to 85°C
ISL55036IRTZ-T13 Intersil Corporation 400MHz Slew Rate Enhanced Rail-to-Rail Output Gain Block; TQFN24; Temp Range: -40° to 85°C
ISL9491ERZ Intersil Corporation Single Output LNB Supply Voltage Regulator for Satellite Set-Top Box Applications; QFN16; Temp Range: -25° to 85°C
ISL6423BERZ Intersil Corporation Highly Integrated Single Output LNB Supply and Control Voltage Regulator with I2C Interface; QFN24; Temp Range: -25° to 85°C

semikron blocking diode 1200 V 250 A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - Semikron SKBA b 500 c 1400

Abstract: Semikron SKB B 500 1400 Semikron SKB b 500 Semikron SKB C3200/2200 Semikron SKB L5b Semikron SKB 2/08 Semikron SKB 2/12 Semikron SKB 250/220 Semikron SKD 30/04 a 1 Semikron SKB 2/02
Text: Mounted on a painted metal sheet of min. 250 x 250 x 1 mm © by SEMIKRON B 11 ­ 7 B 11 ­ 8 © by SEMIKRON V 120 400 800 1000 1200 V 40 125 250 380 500 Miniature Bridge , SEMIKRON VRSM VRRM V 100 400 800 900 1200 V 40 125 250 380 500 V (BR)min V VVRMS , 11 ­ 22 © by SEMIKRON VRSM VRRM V 200 400 800 1200 1400 1600 30 A (94 °C) ID , VRSM VRRM V V 200 400 800 1200 60 125 250 500 Miniature Bridge Rectifiers ID


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SKB 14 08

Abstract: skB 28 Semikron SKB 1 /02 semikron 14/08 Semikron SKB DIODE BRIDGE skb Semikron SKD 62 skd82 semikron skb 60 SKB 14 12
Text: 82/08 80 A (110 °C) 800 V SKB 52/08 SKB 72/08 SKD 62/08 1200 V SKB 52/12 SKB , a painted metal sheet of minimum 250 x 250 x 1 mm: Rthha = 1,8 °C/W © by SEMIKRON 0896 B 11 , VRSM VRRM 60 A (88 °C) 400 V 800 V 1200 V 1400 V 1600 V ID (Tcase = . °C) 60 A (102 °C , VRSM VRRM ID (Tcase = . . .) 70 A (101 °C) 60 A (110 °C) 50 A (99 °C) 200 V SKB 52/02 , 150 A 1, 8 V 1,6 V V (TO) Tvj = 150 °C 0,85 V 0,85 V rT Tvj = 150 °C 8 m


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1997 - Semikron SKB 220

Abstract: semikron blocking diode 1200 V 250 A skb 33 02 skb 33 04 Semikron SKB 250/220 24A32 1V15M Semikron SKB b 80 semikron skb 33/08
Text: ~ / 2500 V 36 A 25 A 5 Nm/44 lb. in. ±15 % 3 Nm/26 lb. in. ±15 % approx. 250 g G 16 Features · Half , Blocking voltage to 1200 V · High surge currents · Easy chassis mounting Typical Applications · Power , VRSM V 300 500 700 900 1100 1300 VDRM VRRM V 200 400 600 800 1000 1200 ID (Tcase = 62 °C , = 130 °C per thyristor/ diode total total isolated1) 2) SKB 33 6,5 A 14 A 24 A 32 A 370 A 340 A 680 A2s 580 A2s 50 A /µs 200 V /µs typ. 80 µs typ. 20 mA; max. 200 mA typ. 80 mA; max. 400 mA 2,4 V 1V


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PDF P1A/120 Nm/26 Semikron SKB 220 semikron blocking diode 1200 V 250 A skb 33 02 skb 33 04 Semikron SKB 250/220 24A32 1V15M Semikron SKB b 80 semikron skb 33/08
1998 - semikron skb 33/08

Abstract: Semikron SKB 33/04 Semikron SKB b 80 single phase half controlled rectifier DIODE BRIDGE skb semikron skb 60 skb 33 04 semikron blocking diode 1200 V 250 A
Text: rectifier with free wheeling diode · Isolated metal case with screw terminals · Blocking voltage to 1200 , VRSM V VDRM VRRM V ID (Tcase = 62 °C, full conduction) 33 A 300 500 700 900 1100 , ) 2) 50 A /µs 200 V /µs typ. 80 µs typ. 20 mA; max. 200 mA typ. 80 mA; max. 400 mA 10 mA 2,6 °C/W 0,65 °C/W 0,06 °C/W ­ 40.+ 130 °C ­ 55.+ 150 °C 3000 V ~ / 2500 V 36 A 25 A 5 Nm , Freely suspended or mounted on an insulator Mounted on a painted metal sheet of min. 250 x 250 x 1 mm


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PDF P1A/120 P1A/120 Nm/44 Nm/26 semikron skb 33/08 Semikron SKB 33/04 Semikron SKB b 80 single phase half controlled rectifier DIODE BRIDGE skb semikron skb 60 skb 33 04 semikron blocking diode 1200 V 250 A
General electric SCR

Abstract: 3 phase ac motor start by scr circuit schematic induction heating induction heating schematic M505032 rectifier diode 6 amp 400 volt 12 volt ac to dc bridge rectifier circuit B512F-2T IXYS SCR MODULE Gate Drive schematic diagram UPS
Text: SCR and/or diode circuits. · Up to 1200 volt blocking capabilities. · Metal base plate is , individual electrical component packaged or unpackaged, such as a resistor, capacitor, transistor, diode , etc. Diode - A two terminal semiconductor which allows electric current to flow easily in one , AC line voltage 120-480 volts. · 8 standard SCR and/or diode circuits. · Up to 1200 volt blocking capabilities. · 11 Current range 25-42.5 amps. Standard . 250 quick - connect


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Sj 33 diode

Abstract: semikron skb 60 Semikron SKB 250 DIODE BRIDGE SKB skb 33 04 GD 08 Rectifiers skb33/12h2
Text: 150 °C 2500 V 36 A 25 A 5N m /44lb. in. ±1 5% 3N m /26lb. in. ±1 5% approx. 250 g G 16 Features · Half , Blocking voltage to 1200 V · High surge currents · Easy chassis mounting Typical Applications · Power , insulator Mounted on a painted metal sheet of min. 250 x 250 x 1 mm © by SEMIKRON B 11 - 47 120 W 100 , s e MIKRO n V drm V rsm V 300 500 700 900 1100 1300 V rrm V 200 400 600 800 1000 1200 Id (Tease = , I d d ;Ird 25 °C; It = 75 A 130 °C = 130°C = 130°C; V dd = V drm ; V rd = V rrm V gt Igt V gd


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PDF /44lb. /26lb. P1/120F P1/120 SKB33 Sj 33 diode semikron skb 60 Semikron SKB 250 DIODE BRIDGE SKB skb 33 04 GD 08 Rectifiers skb33/12h2
Not Available

Abstract: No abstract text available
Text: wheeling diode ⠀¢ Isolated metal case with screw terminals ⠀¢ Blocking voltage to 1200 V ⠀¢ High , à ”13bb71 000b4MG ^144 ⠖ V drm V rsm V V rrm V Id (Tease = 62 °C, full conduction) 33 , 130 Tvj = Tvj = Tvj = Tvj = à ¯\ 50 A /fis 200 V /|iS typ. 80 us typ. 20 mA; max. 200 mA typ. 80 mA; max. 400 mA °C; lT = 75 A °C 2,4 V °C °C; 15 mCi Vdd = V ro = Vdrm , to terminals J US units Case à „ 3000 V ~ / 2500 V 36 A 25 A 5 Nm/44 lb. in.  ±15 % 3 Nm/26


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PDF 13bb71 000b4MG P1A/120 P1/120F 20-C/W P1/120 fll3bb71 613bb71 GD0b442 0Q0b443
B-500 diode

Abstract: Semikron SKB b 500 c 3200 2200 Semikron SKB b 250 C5000-3300 C5000 3300 semikron skb b c5000 DIODE BRIDGE skb Semikron SKB b 80 c3200 c3200 2200 Semikron SKB b 80
Text: s e MIKR ü n V rsm VvRMS Vrrm V 100 200 300 400 600 800 900 1200 V 40 80 125 125 250 250 380 500 , 1,25 V (10 A ) 0,85 V 24 mW 20 p.A 5 pA 1 mA 0,6 mA 4A 8,3 A 3,6 A 6,8 A 3,2 A 6,5 A 2,9 A 5,5 A 250 , of a single diode © by SEMIKRON B 11 -1 3 SKBB.C 3200/2200 SKBaB.C 3200/2200 Case G 5 , °C; (If = . . .) 1,1 V (5 A ) 0,85 V 25 mQ 10 nA 10 nA 0, 5 mA 0,5 mA TV j = 150 °C TV j = 150 , min. 250 x 250 x 1 mm B 11 - 1 1 Fu w Case © b y SEMIKRON 110 TCilse 120 130 140


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PDF C3200/2200 C3200/2200 C5000/3300 B-500 diode Semikron SKB b 500 c 3200 2200 Semikron SKB b 250 C5000-3300 C5000 3300 semikron skb b c5000 DIODE BRIDGE skb Semikron SKB b 80 c3200 c3200 2200 Semikron SKB b 80
1997 - DIN 46249

Abstract: DIN 46249 TERMINALS semikron skd
Text: VRRM VRSM V V 400 800 1200 1400 1600 1800 VVRMS 500 900 1300 1500 1700 1900 Power Bridge Rectifiers ID (Tcase = 125 °C) 50 1) A SKD 51 V 125 250 380 440 500 , i2t VF V (TO) rT IRD trr fG Rthjc Rthch Rthja per diode total total isolated2) chassis3 , substrate (DCB) · Blocking voltage up to 1800 V · High surge currents · UL recognized, file no. E63 532 , Freely suspended or mounted on an insulator Mounted on a painted metal sheet of min. 250 x 250 x 1 mm


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PDF R4A/120 P5A/100 P1A/120 DIN 46249 DIN 46249 TERMINALS semikron skd
1998 - Semikron SKB b 80

Abstract: Semikron SKB b 500 Semikron SKB 250 semikron skd semikron skb 60 SKB C Semikron SKB b 250 SKB 8 02 Semikron SKB 72/08 SKD 82/16
Text: VRSM VRRM ID (Tcase = . . .) 70 A (101 °C) 60 A (110 °C) 50 A (99 °C) 200 V SKB 52/02 , 800 V SKB 52/08 SKB 72/08 SKD 62/08 SKD 82/08 1200 V SKB 52/12 SKB 72/12 SKD , Tvj = 25 °C; IF = 150 A 1, 8 V 1,6 V V (TO) Tvj = 150 °C 0,85 V 0,85 V rT Tvj = , Blocking voltage to 1800 V · High surge currents · SKB = single phase bridge rectifier SKD = three , suspended or mounted on an isolator Mounted on a painted metal sheet of minimum 250 x 250 x 1 mm: Rthha = 1


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PDF A/120 A/200 Semikron SKB b 80 Semikron SKB b 500 Semikron SKB 250 semikron skd semikron skb 60 SKB C Semikron SKB b 250 SKB 8 02 Semikron SKB 72/08 SKD 82/16
1997 - Semikron SKB b 80

Abstract: Semikron SKB b 250 Semikron SKB B 500 1400 Semikron SKB b 500 Semikron SKB 250 SKB 8 02 semikron skb 50 DIODE BRIDGE SKB SKB 40 motor SKD
Text: 82/08 80 A (110 °C) 800 V SKB 52/08 SKB 72/08 SKD 62/08 1200 V SKB 52/12 SKB , a painted metal sheet of minimum 250 x 250 x 1 mm: Rthha = 1,8 °C/W © by SEMIKRON 0896 B 11 , VRSM VRRM 50 A (99 °C) ID (Tcase = . . .) 70 A (101 °C) 60 A (110 °C) 200 V SKB 52/02 , 150 A 1, 8 V 1,6 V V (TO) Tvj = 150 °C 0,85 V 0,85 V rT Tvj = 150 °C 8 m , plastic case with screw terminals · Large, isolated base plate · Blocking voltage to 1800 V · High


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1998 - DIN 46249

Abstract: DIN 46249 TERMINALS
Text: VRRM VRSM VVRMS Power Bridge Rectifiers ID (Tcase = 127 °C) 50 1) A V V 500 900 1300 1500 1700 1900 125 250 380 440 500 570 SKD 51 V 400 800 1200 1400 , ; VRD = VRRM Tvj = 25 °C; IF = IR = 1 A 1,45 0,8 8,5 0,2 4 typ. 5 2000 V V m mA mA µs , i2t VF V (TO) rT IRD trr fG Rthjc Rthch Rthja Tvj Tstg Visol RC a . c. 50 Hz; r.m.s; 1 , impedance through use of direct copper bonded aluminum substrate (DCB) · Blocking voltage up to 1800 V ·


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PDF R4A/120 P5A/100 P1A/120 DIN 46249 DIN 46249 TERMINALS
1998 - DIN 46249

Abstract: DIN 46249 TERMINALS semikron skd 51 46249 BRIDGE RECTIFIERS semikron skd
Text: VRRM VRSM VVRMS Power Bridge Rectifiers ID (Tcase = 127 °C) 50 1) A V V 500 900 1300 1500 1700 1900 125 250 380 440 500 570 SKD 51 V 400 800 1200 1400 , = VRRM Tvj = 25 °C; IF = IR = 1 A 1,45 0,8 8,5 0,2 4 typ. 5 2000 V V m mA mA µs , i 2t VF V (TO) rT IRD trr fG Rthjc Rthch Rthja Tvj Tstg Visol RC a . c. 50 Hz; r.m.s , impedance through use of direct copper bonded aluminum substrate (DCB) · Blocking voltage up to 1800 V ·


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PDF R4A/120 P5A/100 P1A/120 DIN 46249 DIN 46249 TERMINALS semikron skd 51 46249 BRIDGE RECTIFIERS semikron skd
semikron skd

Abstract: semikron skd 50 semikron skd 40 semikron skd 32 semikron skd 100 SKD83 SKD53 c1813 skd 33/08 SKD5308
Text: back SEMIKRON VRRM VRSM Id (Th 1) = . . . °C) V V 33 A (110 °C) 53 A (100 °C) 83 A (95 , 40 . + 125 °C Visol a . c. 50 Hz; r.m.s; 1 s/1 min 3600 / 3000 V ~ Tsolder 10 s 250  ± 10 °C , of min. 250 x 250 x 1 mm Features ⠀¢ Glass passivated silicon chips ⠀¢ Low thermal impedance through use of direct copper bonded aluminum substrate (DCB) base plate ⠀¢ Blocking voltage up to 1800 V , °C; (IF = . . . A ); max. 1,60 (50) 1,50 (50) 1,45 (80) V V (TO) Tvj = 150 °C 0,8 0,8 0,8 V rT Tvj =


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PDF P5A/100 R4A/120 P1A/120 P1A/120F SKD53 SKD83 semikron skd semikron skd 50 semikron skd 40 semikron skd 32 semikron skd 100 c1813 skd 33/08 SKD5308
1998 - semikron skd

Abstract: semikron skd 50 Semikron SKD 26 16
Text: insulator Mounted on a painted metal sheet of min. 250 x 250 x 1 mm © by SEMIKRON Preliminary Data , VRRM VRSM Power Bridge Rectifiers ID (Th 1) = . . . °C) V V 33 A (110 °C) 53 A (100 °C) 83 A (95 °C) 400 800 1200 1400 1600 1800 500 900 1300 1600 1700 1900 SKD , A ); max. Tvj = 150 °C Tvj = 150 °C Tvj = 25 °C; VRD = VRRM Tvj = 150 °C; VRD = VRRM per diode , °C/W °C/W °C/W °C/W °C/W °C °C 3600 / 3000 250 ± 10 2 ± 15 % 18 ± 15 % 5 . 9,81 30 V


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PDF P5A/100 R4A/120 P1A/120 P1A/120F semikron skd semikron skd 50 Semikron SKD 26 16
Semikron SKB b500

Abstract: B-500 diode Semikron SKB 8500 B500 Bridge Rectifiers semikron B500 SKB 8500 Semikron SKBa B500 Semikron SKB b 80 Semikron SKB C3200/2200 skb b500
Text:  seMIKROn Vrsm vrrm vvrms id (Tame = 45 °C) 4 a v v Types Cmax HF Rmin CI 100 400 800 900 1200 40 125 250 380 500 SKB B 40 C3200/2200 SKB B 80 C3200/2200 SKB B 250 C3200/2200 SKB B 380 C3200 , 0,5 1.0 V iß Fig. 9 Forward characteristics of a single diode seMIKRDN SKB B . C 3200/2200 , . 8.3.10 ms 86 50 4 As Prsm tp 10 Us: avalanche type 2000 W Vf Tvj = 25°c:if= 10 a 1.25 V v (70) Tvj , Rectifiers SKBB . C 3200/2200 SKBa B . C 3200/2200 srWiKRpw SK8 8500 C3200/2200 4- / v fv - / â


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PDF C3200/2200 Semikron SKB b500 B-500 diode Semikron SKB 8500 B500 Bridge Rectifiers semikron B500 SKB 8500 Semikron SKBa B500 Semikron SKB b 80 Semikron SKB C3200/2200 skb b500
skd25/16

Abstract: SKB 14 02 Semikron SKB 7 /04 R4A/Semikron SKB 7 /04 SKB 7 / 02
Text: Conditions Tamb = 45°C; Id Iocl Power Bridge Rectifiers I d (Tea > - ⠖ ⠀¢) e ⠖ V rsm 100 200 400 600 800 1200 1400 1600 s e M IK R D n ⠖ LI V V m fi mA mA US Hz °C/W °C/W °C/W °C/W °C/W °C/W °C °C V - n HF A Nm lb. in. SKB SKD , single diode ai3bb?i  ©by SEMIKRON ooomot i&h B 11 ⠀”21 SKB25 SKD2S CaseQ10 CaseG , à ›13bb71 DOObMOM 17 A = (75 °C) V rrm 20 A (73 °C) Types Rmin SKB 25/01 SKB 25


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PDF 13bb71 R4A/120 P1A/120 15for SKB25 CaseQ10 013bb71 skd25/16 SKB 14 02 Semikron SKB 7 /04 R4A/Semikron SKB 7 /04 SKB 7 / 02
1998 - Semikron 50 04 a3

Abstract: Semikron skd 50/04 Semikron SKB 50/02 a3 semikron skd 50/08 SKB 7 04 SKB 7 08 semikron skd 50/02 SKB 7 / 12 SKB 7 02 Semikron SKB 7 /04
Text: SEMIKRON B 11 ­ 35 B 11 ­ 36 © by SEMIKRON Fig. 9 Forward characteristics of a single diode , Tvj = 25 °C; IF = 150 A V (TO) Tvj = 150 °C rT Tvj = 150 °C IRD Tvj = 25 °C; VRD = VRRM Tvj = , 14 G 15 Units A A A A A A A A A A A 2s A 2s V V m mA mA µs Hz °C/W °C/W °C/W °C/W °C/W °C/W °C °C V µF A Nm lb. in. Nm lb. in. g SKB SKD Features · Isolated metal case with screw terminals · Blocking voltage to 1600 V · High surge current · SKB =


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PDF P1A/120 P1A/120 Semikron 50 04 a3 Semikron skd 50/04 Semikron SKB 50/02 a3 semikron skd 50/08 SKB 7 04 SKB 7 08 semikron skd 50/02 SKB 7 / 12 SKB 7 02 Semikron SKB 7 /04
Not Available

Abstract: No abstract text available
Text: s e M IK R d n V r sm V Cmax HF Types V 200 400 800 1200 Miniature Bridge Rectifiers I d (Tamb = 45 °C) 2,5 A VvRMS V rrm 60 125 250 500 SKB 2/02 SKB 2/04 SKB 2 , * Mounted on a painted metal sheet of min. 250 x 250 x 1 mm  © by SEMIKRON ⠖ 613titi71 000b3T3 ST6 , Tamb = 45 °C; isolated1* chassis2* 1,4 A 2A If s m T v j= Tv| = 25 °C, 10 ms 150 °C, 10 ms 58 A 50 A h T v i= 25 Tvj ⠀”150 Vf Tvj = 25 °C; If = 10 A 1,65 V


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PDF 613titi71 000b3T3
DIN 46249

Abstract: DIN 46249 TERMINALS semikron skd 50
Text: through use of direct copper bonded aluminum substrate (DCB) ⠀¢ Blocking voltage up to 1800 V ⠀¢ High , seMIKRDN VRRM VRSM VVRMS ID (Tcase = 127 °C) 50 1) A V V V 400 500 125 SKD 51/04 800 900 250 SKD 51/08 1200 1300 380 SKD 51/12 1400 1500 440 SKD 51/14 1600 1700 500 SKD 51/16 1800 , insulator 3) Mounted on a painted metal sheet of min. 250 x 250 x 1 mm Power Bridge Rectifiers SKD 51 , = 25 °C; IF = 75 A 1,45 V V (TO) Tvj = 150 °C 0,8 V It Tvj = 150 °C 8,5 mQ Ird Tvj = 25 °C


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PDF R4A/120 P5A/100 P1A/120 DIN 46249 DIN 46249 TERMINALS semikron skd 50
Not Available

Abstract: No abstract text available
Text: S 0,5 v 1,5 2 Fig. 9 Forward characteristics of a single diode 100 A 250 i i i , /200mA 300/600 mA 250 /400 mA 2,3 V (75 A ) 2,3 V (75 A ) 1,95V(200A) 1,0V 1,0V 1,0V 16 m il 4,5 m , G21 G21 1 Painted metal sheet of minimum 250 x 250 x 1 mm: Rthca = 1,8° C/W )  © by SEMIKRON , €¢ Large, isolated base plate ⠀¢ Blocking voltage to 1600 V ⠀¢ High surge currents ⠀¢ Easy chassis , . 10 b On-state characteristics of a single thyristor B 11-55 SEMIKRON INC T v t f 'O '


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PDF SKBT40 P13/125 P1/120 P3/180F
Not Available

Abstract: No abstract text available
Text: ai3bb71 V rrm V r sm VvRMS 0GGb422 W ⠖ 5EMIKR0N Power Bridge Rectifiers lo (Tease = 1 2 5 °C) 50 ' A V 400 800 1200 1400 1600 1800 V SKD 51 V 500 900 1300 , of direct copper bonded aluminum substrate (DCB) ⠀¢ Blocking voltage up to 1800 V ⠀¢ High surge , . 250 x 250 x 1 mm  © by SEMIKRON 0896 B 11 - 37 SKD 51 Case G 51 25.8 e , = 75 A 1,45 V Tvj = 150 °C 0,8 V rr Tvj = 150 °C 8,5 m il Ird Tvj


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PDF ai3bb71 0GGb422 R4A/120 P5A/100
1998 - SKiiP 33 NEC 125 To

Abstract: skiip 33 ups 063 skiip 32 ups 063 semikron skiip 33 nec skiip 85 UPS 06 skiip 33 nec 125 t semikron skiip 33 NEC 125 semikron skiip 32 ups 063 skiip 32 ups 06 SKIIP 33 UPS 06
Text: - - C-I CN 300V For 1200 V devices: Eon (I V ( TC ) Diode forward current , /AC circuits: for AC/DC circuits: N = diode rectifer H = half control bridge A = three phase input E = one phase input blank E = single-phase A = three-phase N = Diode T = thyristor H = , = 600 V , 063 = 600 V NPT, 12 = 1200 V , 08 = 800 V , 15 = 1500 V Option: I = Current shunts or , load including the influence of the freewheeling diode turn-off using a suitable RG. The turn-on (-off


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semikron skb 30

Abstract: P5100 skd30 SKB30 semikron skb30 skb semikron A2S22 SKB 26
Text: s e MIKRDN V rsM V rrm Id (Tease = · ) 30 A (94 °C) 30 A (98 °C) Rmin V 200 400 800 1200 1600 Types SKB 30/02 A1 SKB 30/04 A1 SKB 30/08 A1 SKB 30/12 A1 SKB 30/16 A13) a Types SKD , ,3.10 ms 25 °C; I f = 150 A 150 °C 1 5 0 °C 25 °C; V r d = V r r m 150 °C; V r d = V r r m 25 °C , 2,2 °C/W 1,4 °C/W - 40.+ 150 °C - 55. f 1 5 0 °C 3000 V ~ /2 5 0 0 V 0,1 |iF+50 Cl 25 A 1,5 Nm/13 , metal case with screw term inals Blocking voltage to 1600 V High surge currents SKB = single phase


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PDF P5/100 P1/120 SKB30 SKD30 semikron skb 30 P5100 skd30 SKB30 semikron skb30 skb semikron A2S22 SKB 26
SKB 1.3

Abstract: skd30/16 A1 SKD 30/16 A1
Text: €¢ Isolated metal case with screw terminals ⠀¢ Blocking voltage to 1600 V ⠀¢ High surge currents ⠀¢ SKB , diode ⠖  © by SEMIKRON à ” 1 3 b b7 1 o a O b H l b f c .25 0895 B 11-31 SKB30 SKD30 , B13titi71 QQ0b414 fi52 ⠖ Id (Tcasi = V rsm V rrm 30 A (94 °C) 30 A (98 °C) Rmin Q , T„j Tvj Tvj Tvj Tvj = = = = = = 25 °C; If =150 A 150 °C 150 °C 25 °C; V rd = , A A A A A A A A A A A A A A2s A2s V V mA mA US Hz °C/W °C/W °C/W °C/W


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PDF B13titi71 QQ0b414 P5A/100 R4A/120 P1A/120 P5/100 P1/120 SKB30 SKB 1.3 skd30/16 A1 SKD 30/16 A1
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