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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
TCM1050P Texas Instruments Dual Transient-Voltage Suppressor 8-PDIP
TVB058NSA-L (RF0936-000) TE Connectivity Ltd SiBar Thyristor Surge Protectors; TVB058NSA-L ( Raychem )
TVB090NSA-L (RF0927-000) TE Connectivity Ltd SiBar Thyristor Surge Protectors; TVB090NSA-L ( Raychem )
TVB170NSB-L (RF0950-000) TE Connectivity Ltd SiBar Thyristor Surge Protectors; TVB170NSB-L ( Raychem )
TVB190NSC-L (RF0960-000) TE Connectivity Ltd SiBar Thyristor Surge Protectors; TVB190NSC-L ( Raychem )
TVB270SC-L (D84852-000) TE Connectivity Ltd SiBar Thyristor Surge Protectors; TVB270SC-L ( Raychem )

scs thyristor Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: SPE C IAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and Switching Applications) Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) On Voltage (Volts) Effective Current (Amps) Surge Current (Amps) Holding Current (mA) V bo , generators Fluorescent lighting ignitors SILICON CONTROLLED SWITCH ( SCS ) Maximum Ratings 239 Case , transistor Base (y > o < Collector NPN transistor o Emitter SCS CIRCUIT SYMBOL


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Not Available

Abstract: No abstract text available
Text: SPECIAL DEVICES SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and Switching Applications) Maximum Ratings NTE Type Number Diagram Number Breakover Voltage (Volts) V bo VT Itrms *T SM 'H o ld Pd 6415 395 40 to 60 1.5 1 13 50 850 6416 395 , voltage power supplies SILICON CONTROLLED SWITCH ( SCS ) Maximum Ratings NTE Type Number Case , Collector NPN transistor Base O ' SCS CIRCUIT SYMBOL See Diagrams, beginning on Page 1-95 1-92


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PDF L431SSR
Diode LT 410

Abstract: No abstract text available
Text: F = 7 SCS -THOMSON * 7 i» MDS35 M © 3 © iL iC T [i» ® (g S DIODE /THYRISTORMODULE , CONNECTIONS 1 2 3 4 : Thyristor Gate (G) : Thyristor Cathode (K) : Thyristor Anode/Diode Cathode (I , dissipation versus average on-state current. (Sinusoidal waveform : Thyristor or Diode) Fig. 2 , thermal resistances heatsink + contact. (Sinusoidal waveform : Thyristor or Diode) P(avXW) 50 45 40 , current. (Rectangular waveform : Thyristor or Diode) P(av)(W) fOn \ Tt 5 0 I 30 0 10


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PDF MDS35 MDS35 Diode LT 410
scs thyristor

Abstract: thyristor firing circuits scr firing gas ignition Thyristor 220V transistor+t+2180 thyristor pin diagram Transistor k2 IDT Thailand capacitor discharge ignition scr lighter ignitor
Text: FEATURES ■SPACE SAVING : MONOLITHIC FIRE LIGHTER FUNCTION INTEGRATION ■DEDICATED THYRISTOR , . The main applications are ignitor circuits such as : fuel ignitions / gas boilers. Th : Thyristor , Conditions Value Unit Vf If = 2A tp< 1 ms Tj = 25 °C MAX 1.7 V THYRISTOR (Th) and ZENER (Z) PARAMETERS , the spark frequency and to limitate the current from the mains. Its value shall allow the thyristor Th , gate of the thyristor Th which fires. The firing of the thyristor causes an alternating current to


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PDF FLC02-200D FLC02 scs thyristor thyristor firing circuits scr firing gas ignition Thyristor 220V transistor+t+2180 thyristor pin diagram Transistor k2 IDT Thailand capacitor discharge ignition scr lighter ignitor
2n2646 equivalent

Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 THYRISTOR A2f equivalent transistor of 2n6027 low voltage scr 3n84
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , integrated circuit having the electrical characteristics of a bilateral thyristor . The device is designed to


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PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 THYRISTOR A2f equivalent transistor of 2n6027 low voltage scr 3n84
2n2646 equivalent

Abstract: 2N2646 triac phase control EQUIVALENT 2N1671 2N4991 2N602B SBS thyristor four-layer diode 3n84 2N4987
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , circuit having the electrical characteristics of a bilateral thyristor . The device is designed to switch


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PDF 2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control EQUIVALENT 2N1671 2N4991 2N602B SBS thyristor four-layer diode 3n84 2N4987
2n2646 equivalent

Abstract: IN5059 SUS-2N4986 3N84 SUS 2N4987 2N4987-90 equivalent transistor of 2n6027 2N4987 equivalent ge motor capacitor cross reference CIRCUITS BY USING 2N6027
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , , monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an


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PDF 2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent IN5059 SUS-2N4986 3N84 SUS 2N4987 2N4987-90 equivalent transistor of 2n6027 2N4987 equivalent ge motor capacitor cross reference CIRCUITS BY USING 2N6027
2N4983

Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent 2N4991 GE C22B 2N602B SBS thyristor ge motor capacitor cross reference
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , circuit having thyristor electrical characteristics closely approximating those of an "ideal" four layer


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PDF 2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent 2N4991 GE C22B 2N602B SBS thyristor ge motor capacitor cross reference
3N84

Abstract: 2N4988 2N327 2N4991 RCA SCR 2n IN4I48 2N4984 3N85 3N81 40v neon lamp
Text: , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES ( SCS ) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , construction and varied applications. SCS nomenclature permits the reverse characteristics of all three , TRIGGERS SCS BUT HAS INSUFFICIENT AMPLITUDE TO TRIGGER SCS *L. A THREE VOLT INPUT PULSE IS DELAYED IN REACHING SCS * BY THE IOK AND .OOljif INTEGRATING NETWORK. INSTEAD, IT TRIGGERS SCS *Z THEN RAISES THE


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PDF 2NM46 2N327 3N84 2N4988 2N4991 RCA SCR 2n IN4I48 2N4984 3N85 3N81 40v neon lamp
GE TRIAC SC40B

Abstract: 2n4992 3N84 transistor 2n4992 SC40B 2N4992 equivalent SBS thyristor 2n2646 equivalent triac 9012 Triac 50 amp 250 volt
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , integrated circuit having the electrical characteristics of a bilateral thyristor . The device is designed to


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PDF 2N489-494â 2N2646-47â 2N4992 SC40B GE TRIAC SC40B 3N84 transistor 2n4992 SC40B 2N4992 equivalent SBS thyristor 2n2646 equivalent triac 9012 Triac 50 amp 250 volt
3N81

Abstract: IN4148 anode cathode thyristor igc 2N4983 eto thyristor 3N84 TRANSISTOR BO 344 2N4987 thyristor eto IR SCR 16 RC 100A
Text: , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES ( SCS ) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , controlled switches ( SCS ) offering outstanding circuit design flixibility by providing leads to all four , reliability and uniformity at low cost. The SCS is thoroughly characterized at temperature extremes to permit , . SCS nomenclature permits the reverse characteristics of all three junctions to be specified. rVâ


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diac SBS 14

Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
Text: fa^iasq Qoaab73 7n MNTE T-25-01 SIDAC-BIDIRECTIONAL THYRISTOR DIODES (For Pulse Generating and , lighting ignitors SILICON CONTROLLED SWITCH ( SCS ) NTE Type Number CaM Style Diagram Number Polartty , NPN 70 5 70 -100 -500 PNP transistor Base O f-O Collector NPN transistor SCS CIRCUIT SYMBOL , having thyristor electrical characteristics closely approximating those of an "ideal" four layer diode , characteristics from 28 to 63 Volts. The DIAC semiconductor is a full-wave or bidirectional thyristor . It is


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2N2646 equivalent

Abstract: SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , silicon planar, monolithic integrated circuit having thyristor electrical characteristics closely


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PDF 2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 3n84 3N81 2N4991 D5K2 2N4988 20 amp 800 volt triac EQUIVALENT 2N1671 2N4983
2N4985

Abstract: 2N2646 cross reference 2n2646 equivalent 2N4984 GE SCR cross reference 2N4991 2N4983 2N2646 2n4992 Silicon unilateral switch
Text: resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression , integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" , 05 120 3 5 1 3 300 6 10 500 1.0 1.5 3 5 16 262 SILICON CONTROL SWITCHES ( SCS ) High , planar, monolithic integrated circuit having thyristor electrical characteristics closely approximating


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PDF 2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2n2646 equivalent 2N4984 GE SCR cross reference 2N4991 2N4983 2N2646 2n4992 Silicon unilateral switch
3n84

Abstract: 2N4983 SCR nomenclature, General electric 2N4985 2N4987 2n4990 scr 6A 2N4984 n4148 GE 2N4992
Text: , planar monolithic integrated circuit having thyristor electrical characteristics closely approximating , SWITCHES ( SCS ) High triggering sensitivity. 4 lead capability for multiple load or dv/dt suppression , controlled switch ( SCS ) offering outstanding circuit design flexibility by providing leads to all four , rehability and uniformity atlow cost. The SCS is thoroughly characterized at temperature extremes to permit , POINT. OF SUBSCRIPT LETTE*. fio. 1 I pio. a DEFINITION OF TERMS USED IN SCS SPLL11 ICAI IONS PNPN


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PDF 200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 SCR nomenclature, General electric 2N4985 2N4987 2n4990 scr 6A 2N4984 n4148 GE 2N4992
1999 - triac 216

Abstract: RC snubber dv/dt handbook Triac slow on RC snubber ac motor scs thyristor 3-phase motor triac RC snubber thyristor design parallel triac triac commutation three phase triac control
Text: . However, the two are on the same piece of silicon. As one thyristor turns off, there is a possibility , triggering the other thyristor as the voltage rises in the opposite direction. This is described as a , the two ` thyristor halves' of a triac. However, separating them into two discrete chips would remove , thyristor at turn-off will have more chance of flowing out through the emitter shorts (of the opposite thyristor ) rather than acting as gate current to trigger that thyristor on. The Hi-Com triacs have a


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PDF FS013 triac 216 RC snubber dv/dt handbook Triac slow on RC snubber ac motor scs thyristor 3-phase motor triac RC snubber thyristor design parallel triac triac commutation three phase triac control
2N2646

Abstract: transistor put 2n6028 unijunction transistor Unijunction 2N6028 2n2646-47-low D13K1 SCR 2N2646 Programmable Unijunction Transistor PUT 2N6028
Text: thyristor trigger, and each offers a special advantage for a particular trigger function. In addition, each , ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression


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PDF 2N489-494â 2N2646-47â 2N2646 transistor put 2n6028 unijunction transistor Unijunction 2N6028 2n2646-47-low D13K1 SCR 2N2646 Programmable Unijunction Transistor PUT 2N6028
CP1512

Abstract: No abstract text available
Text: PARAMETERS RELATED TO PROTECTION THYRISTOR Symbol IGT 'H Tests Conditions Min. VGATE= -48 V , 0.5 A Square pulse, Tp = 500 us, l j = 3 A PARAMETERS RELATIVE TO DIODE AND PROTECTION THYRISTOR , Note 2 : See test circuit for Ih and V sgl. - ¿ 5 7 SCS -1HQMSON 7^2^237


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PDF LCP1511 LCP1512 CP1511 CP1512 LCP1511 CP1512
2002 - reverse-conducting thyristor

Abstract: gto Gate Drive circuit IGCT thyristor Usha Rectifier IGCT mitsubishi Emitter Turn-Off thyristor eto thyristor HEXFET Power MOSFET designer manual GTO triac MOS-Controlled Thyristor
Text: Thyristor and Triac · Gate Turn-Off Thyristor · ReverseConducting Thyristor (RCT) and Asymmetrical , MOS-Controlled Thyristor (MCT) Delphi Automotive Systems Sohail Anwar Pennsylvania State University , · The Silicon-Controlled Switch · The Gate Turn-Off Thyristor · Data Sheet for a Typical Thyristor , characteristics of these power devices is presented in this section. Thyristor and Triac The thyristor , also , . The turn-off is achieved by applying a reverse voltage across the anode and cathode. The thyristor


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PDF MCT00, reverse-conducting thyristor gto Gate Drive circuit IGCT thyristor Usha Rectifier IGCT mitsubishi Emitter Turn-Off thyristor eto thyristor HEXFET Power MOSFET designer manual GTO triac MOS-Controlled Thyristor
2004 - list of P channel power mosfet

Abstract: BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit TEA1622 BQ 24 smd semiconductors
Text: -800C Thyristor SOT186 74LVC11 3.3 V Triple 3-Input AND Gate BQ PHB101NQ04T N-Channel MOSFET , -500C Thyristor SOT78 PHX27NQ11T N-Channel MOSFET SOT186 BT151-650C Thyristor SOT78 PHX34NQ11T N-Channel MOSFET SOT186 BT151-800C Thyristor SOT78 PHX45NQ11T N-Channel MOSFET SOT78 BT151U-500C Thyristor SOT533 PHX8NQ11T N-Channel MOSFET SOT186 BT151U-650C Thyristor SOT533 PMWD15UN Dual N-Channel µTrenchMOS SOT530 BT151U


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PDF P89LPC932A1 LPC932 OT416 PBSS5480X SSTU32864, SSTU32865, SSTU3286 list of P channel power mosfet BT151 MOSFET Transistor smd BQ 22 SSTU32964 smd transistor bq 22 A114 pnp TEA1620P equivalent SMD Transistor PNP Switching circuit, Inverter, Interface circuit, Driver circuit TEA1622 BQ 24 smd semiconductors
3n84

Abstract: D29A4 C13P ring COUNTER scr triggering 2N1770-8 SCR AUTOMOTIVE APPLICATIONS general electric scs thyristor automotive SCR
Text: "complementary" SCR's. A four-terminal, Silicon Controlled Switch ( SCS ) has connections to both bases and either , 2N34I5 LOW COST RING COUNTER also be used for ordinary thyristor applications. This ring counter makes


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PDF 2N1770-8 D29A4 2N34I5 3n84 D29A4 C13P ring COUNTER scr triggering SCR AUTOMOTIVE APPLICATIONS general electric scs thyristor automotive SCR
ujt transistor 2n2160

Abstract: 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
Text: UNfJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued developing an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and each offers a special advantage for a particular trigger function. In addition, each can be , SWITCH ( SCS )—high triggering sensitivity, 4-lead capability for multiple loads or dv/dt suppression


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PDF 2N489-494â 2N2646-47â ujt transistor 2n2160 2N2160 2N602B General electric SCR 2n2222 germanium UJT 2N2646 2N4891 2n2646 ujt UJT 43 Programmable Unijunction Transistor applications of ujt with circuits
pelton turbine

Abstract: 5 MVA generator 1 MVA generator MVA generator REG316 ANSI 87T abb mva transformer 100 MVA transformer large generator protection hydro generator
Text: 2 only necessary for thyristor excitation from generator terminals 3 only necessary for pump , integration into numerical control systems ( SCS ). Numerical protection provides many advantages for the user , B 51/27 Overcurrent/undervoltage (for thyristor excitation) B 51 Overcurrent B Current unbalance


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PDF 1MRK501 010-BEN REG316M REG316 pelton turbine 5 MVA generator 1 MVA generator MVA generator ANSI 87T abb mva transformer 100 MVA transformer large generator protection hydro generator
toshiba gto

Abstract: sgr3000gxh26
Text: SEMICONDUCTOR T n C U ID A w w I I TOSHIBA GATE TURN-OFF THYRISTOR SGR3000GXH26 REVERSE CONDUCTING TYPE TECHNICAL DATA (SGR3000GXH26) INVERTER APPLICATION U n it in mm 2 0 3 ,5 + 0 .2 · · · · · · R ep etitive Peak Off-State Voltage R .M .S On-State C u rren t R .M .S Reverse C u rren t Peak Turn-O ff C urrent : Vd rm -4500V (N ote 1) : I t (R M S ) = 1200A (T f , It GQM - Cg H 50K '- I Scs Svi H° D W D / / / 4 v îjs M I RS M " ' V \ V g H


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PDF SGR3000GXH26 SGR3000GXH26) --4500V SGR3000GXH26-4* toshiba gto sgr3000gxh26
Not Available

Abstract: No abstract text available
Text: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR / DIODE and THYRISTOR / THYRISTOR INT-A-pak™ Power Modules 135 A 140 A 160 A Features ■H ig h v o lta g e ■E lectrically Isolated base plate ■3000 V RMSIsolating voltage ■Industrial , INT-A-paks Suitable for Current Source Inverters Thyristor VDRM D iode V rsm vRRM V rsm V rrM , 10 1250 100 0.01 N um ber Of Equal M i p lt u d c Half C ycJc C u rre n t FU scs (N


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PDF ULE78996 D03QQb5
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