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Part Manufacturer Description Datasheet Download Buy Part
LTC1444CN#PBF Linear Technology LTC1444 - Ultralow Power Quad Comparators with Reference; Package: PDIP; Pins: 16; Temperature Range: 0°C to 70°C
LTC1444CN#TR Linear Technology IC QUAD COMPARATOR, 10000 uV OFFSET-MAX, 5000 ns RESPONSE TIME, PDIP16, 0.300 INCH, PLASTIC, DIP-16, Comparator
LTC1444CN#TRPBF Linear Technology IC QUAD COMPARATOR, 10000 uV OFFSET-MAX, 5000 ns RESPONSE TIME, PDIP16, 0.300 INCH, LEAD FREE, PLASTIC, DIP-16, Comparator
LTC1444IDHD#TRPBF Linear Technology LTC1444 - Ultralow Power Quad Comparators with Reference; Package: DFN; Pins: 16; Temperature Range: -40°C to 85°C
LTC1444CS#TR Linear Technology LTC1444 - Ultralow Power Quad Comparators with Reference; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C
LTC1444CDHD#TRPBF Linear Technology LTC1444 - Ultralow Power Quad Comparators with Reference; Package: DFN; Pins: 16; Temperature Range: 0°C to 70°C

scl 1444 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - sot 363 dual smd ea code transistor

Abstract: smd diode 4pin D13 BAT6203WE scl 1444 EA 5pin transistor CB6 smd transistor smd diode 4pin D11 ADUM1250ARZ smd transistor A1 J45 USBMULTILINKBDME
Text: respective owners. Application Note 1444 7 CELLS 20 20 VCELL7 19 CB7 VCELL6 V CB5 , AN1444.0 December 15, 2008 Application Note 1444 Initial Testing supplies or battery cells. To , 15, 2008 Application Note 1444 USB to I2C interface · Once the power supply connections are , ISLI2C-KIT. . ISL9208EVAL2Z J8 SDA NC GND SCL FETs DeVaSys BOARD CABLE J29 5-PIN TO 5 , .0 December 15, 2008 Application Note 1444 minimum voltage by more than 30mV. If so, note the cell


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PDF ISL9208EVAL2Z ISL9208EVAL2Z AN1444 sot 363 dual smd ea code transistor smd diode 4pin D13 BAT6203WE scl 1444 EA 5pin transistor CB6 smd transistor smd diode 4pin D11 ADUM1250ARZ smd transistor A1 J45 USBMULTILINKBDME
SPDC1016

Abstract: IC 4043 configuration scl 1444 ic 4043 SPDC1064 epcon sunplus spdc SPDC4000 AD441 SPR1024A
Text: ) Characteristic Symbol Max. Min. Unit tC - 400 ns Low period of SCL clock tLOW - 170 ns High period of SCL clock tHIGH - 170 ns Address setup time tAS - , 13.5 ms Rise time of SCL tRSC 15 - ns Fall time of SCL tFCL 15 - ns Rise time of SDA tRDA 15 - ns Fall time of SDA tFDa 15 - ns Period of SCL , 11 VSS 641 -1445 12 TEST 635 1444 13 CF1 515 1444 14 CF2


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PDF SPR1024A 128Kx8 SPR1024A 128k-byte. SPDC1016 IC 4043 configuration scl 1444 ic 4043 SPDC1064 epcon sunplus spdc SPDC4000 AD441
scl 1444

Abstract: NES1818-20B 4525 gm
Text: dB Typical Linear Gain LOW IMD -44 dBc @ 32 dBm ( SCL ) CLASS A OPERATION PARTIAL INTERNAL MATCH 8.0 , Linear Gain 3rd Order Intermodulation Distortion at P o u r . 3 2 dBm ( SCL )* Saturated Drain Current, V G , ) Notes: 1. PidB: Output power at the 1 dB Gain Compression Point 2. SCL : Single Carrier Level 2-29 , 0.205 0.310 0.416 ANG -152.1 -172.0 165.1 149.4 144.4 139.6 128.1 122.0 114.9 107.0 96.3 80.8 76.4 71.6 , 1.873 1.579 1.462 1.462 1.622 1.516 1.387 1.399 1.444 1.480 1.483 1.445 1.452 1.473 1.482 1.479 1.502


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PDF NES1818-20B NES1818-20B IS12S21I scl 1444 4525 gm
2003 - scl 1444

Abstract: 4953 4953 FET EIC5964-5
Text: SCL Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EIC5964-5 is a , IM3 Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L , Ohm gate resistor. 2. S.C.L . = Single Carrier Level. 3. Overall Rth depends on case mounting , S12 (dB) 0. 3. -68.84 -84.6 -101.78 -121 - 144.4 -175.32 131.27 -19.28 -68.73 -97.49 , Operating Region f1 or f2 Pout [ S.C.L .] (dBm) Total Power Dissipation (W) Power Dissipation vs


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PDF EIC5964-5 EIC5964-5 scl 1444 4953 4953 FET
1999 - FLM5359-12F

Abstract: No abstract text available
Text: S.C.L . Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth , G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level 1 FLM5359-12F C-Band Internally , Power ( S.C.L .) (dBm) Total Power Dissipation (W) 60 17 19 21 23 25 27 Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level VDS=10V P1dB 42 Pin=33dBm 41 40 31dBm 39 , -99.5 .063 - 144.4 .350 108.2 6000 .513 59.3 3.141 -114.9 .064 -159.7


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PDF FLM5359-12F -46dBc FLM5359-12F FCSI0499M200
2004 - pt 2097

Abstract: No abstract text available
Text: S.C.L . Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.5 ~ 15.3 GHz, ZS = ZL = , 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L .: Single , Total Power Dissipation (W) 31 Output Power ( S.C.L .) (dBc) -10 20 29 Pout 27 -20 , 26 Case Temperature (°C) Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT , -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 S-PARAMETERS VDS = 10V, IDS = 900mA


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PDF FLM1415-3F -46dBc FLM1415-3F pt 2097
2004 - 513 s12 datasheet

Abstract: high power FET transistor s-parameters FLM1415-3F
Text: -Tone Test Pout = 23.5dBm S.C.L . Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , 1.4 August 2004 G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level 1 FLM1415 , IM3 23 IM3 (dBc) Output Power ( S.C.L .) (dBc) Total Power Dissipation (W) 30 -50 , Power (dBm) Output Power (dBm) 36 22 Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier , .603 -13.4 14600 .089 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700


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PDF FLM1415-3F -46dBc FLM1415-3F 513 s12 datasheet high power FET transistor s-parameters
2004 - Not Available

Abstract: No abstract text available
Text: G1dB Idsr add G IM3 Rth Tch f = 5.9 GHz, f = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L . Channel to Case , % dB dBc °C/W °C 3250 3800 G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level , OUTPUT POWER & IM3 vs. INPUT POWER Output Power ( S.C.L .) (dBm) 37 35 33 31 29 27 25 23 IM3 Pout , ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT POWER vs. FREQUENCY 43 OUTPUT POWER vs. INPUT , .050 .054 .057 .060 .063 .064 .066 21.1 -4.1 -26.3 -49.2 -71.0 -91.6 -110.3 -128.1 - 144.4 -159.7 -174.1


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PDF FLM5359-12F -46dBc FLM5359-12F
1999 - Not Available

Abstract: No abstract text available
Text: G1dB Idsr hadd ÆG IM3 Rth ÆTch f = 5.9 GHz, Æf = 10 MHz 2-Tone Test Pout = 30.5dBm S.C.L . Channel to , mA % dB dBc ¡C/W ¡C 3250 3800 G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level , OUTPUT POWER & IM3 vs. INPUT POWER Output Power ( S.C.L .) (dBm) 37 35 33 31 29 27 25 23 17 19 21 23 25 27 Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level IM3 Pout Total Power Dissipation (W) 50 , .064 .066 21.1 -4.1 -26.3 -49.2 -71.0 -91.6 -110.3 -128.1 - 144.4 -159.7 -174.1 S22 MAG .434 .401


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PDF FLM5359-12F -46dBc FLM5359-12F FCSI0499M200
1998 - Not Available

Abstract: No abstract text available
Text: 23.5dBm S.C.L . Channel to Case 10V x Idsr x Rth VDS = 10V f = 14.5 ~ 15.3 GHz IDS @ 0.65 IDSS(Typ.) ZS = , 6.0 66 Unit mA mS V V dBm dB mA % dB dBc ¡C/W ¡C G.C.P.: Gain Compression Point, S.C.L .: Single , DERATING CURVE 30 Output Power ( S.C.L .) (dBc) Total Power Dissipation (W) OUTPUT POWER & IM3 vs. INPUT , ) Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT POWER vs. FREQUENCY 37 36 35 34 33 32 , .283 .292 .290 .263 .230 .196 -70.6 -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2


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PDF FLM1415-3F -46dBc FLM1415-3F FCSI0598M200
1998 - Not Available

Abstract: No abstract text available
Text: S.C.L . Channel to Case 10V x Idsr x Rth VDS = 10V, IDS = 0.6 IDSS(Typ.), f = 14.5 ~ 15.3 GHz, ZS = ZL = , 66 Unit mA mS V V dBm dB mA % dB dBc °C/W °C G.C.P.: Gain Compression Point, S.C.L .: Single , Total Power Dissipation (W) 31 Output Power ( S.C.L .) (dBc) -10 20 29 Pout 27 -20 , 26 Case Temperature (°C) Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT , -87.9 -142.8 144.4 117.3 102.1 91.1 80.1 69.8 57.8 43.8 25.7 0.2 S-PARAMETERS VDS = 10V, IDS = 900mA


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PDF FLM1415-3F -46dBc FLM1415-3F FCSI0598M200
1998 - FLM1415-3F

Abstract: No abstract text available
Text: -Tone Test Pout = 23.5dBm S.C.L . Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , 1.2 August 1999 G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level 1 FLM1415 , vs. INPUT POWER V 14.8 18 Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level VDS , IM3 (dBc) Output Power ( S.C.L .) (dBc) Total Power Dissipation (W) 30 FLM1415 , 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700 .151 117.3 2.095 23.2


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PDF FLM1415-3F -46dBc FLM1415-3F FCSI0598M200
2004 - 3842F

Abstract: FLM5359-12F 513 s12 datasheet scl 1444
Text: S.C.L . Thermal Resistance Rth Channel to Case - 2.3 2.6 °C/W 10V x Idsr x Rth , G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level FLM5359-12F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER Output Power ( S.C.L .) (dBm) 50 40 , ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT POWER vs. FREQUENCY VDS=10V P1dB VDS , 5900 .485 76.0 3.250 -99.5 .063 - 144.4 .350 108.2 6000 .513 59.3


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PDF FLM5359-12F -46dBc FLM5359-12F Pow28 3842F 513 s12 datasheet scl 1444
Not Available

Abstract: No abstract text available
Text: Pout = 30.5dBm S.C.L . Channel to Case 10V x Idsr x Rth Min. -1.0 -5.0 40.5 8.5 - Limit , .: Gain Compression Point, S.C.L .: Single Carrier Level CASE STYLE ESD IK Class 3A Note : Based , ) Output Power ( S.C.L .) (dBm) Total Power Dissipation (W) OUTPUT POWER & IM3 vs. INPUT POWER Case Temperature (deg.C) Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level OUTPUT POWER vs. INPUT POWER , -49.2 -71.0 -91.6 -110.3 -128.1 - 144.4 -159.7 -174.1 MAG 0.434 0.401 0.372 0.352 0.343


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PDF FLM5359-12F -46dBc 50ohm FLM5359-12F 25deg
FLM5359-12F

Abstract: CS 5800
Text: Intermodulation Distortion IM3 f = 5.9GHz, Af= 10 MHz 2-Tone Test Pout = 30.5dBm s.c.l . -44 -46 - dBc Thermal , CASE STYLE: IK G.C.P.: Gain Compression Point, S.C.L .: Single Carrier Level Edition 1.2 August 1999 , im3 -20 _ -30 g -40 f -50 17 19 21 23 25 27 Input Power ( S.C.L .) (dBm) S.C.L .: Single , .060 -128.1 .346 121.8 5900 .485 76.0 3.250 -99.5 .063 - 144.4 .350 108.2 6000 .513 59.3 3.141 -114.9


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PDF -46dBc FLM5359-12F FLM5359-12F FCSI0499M200 CS 5800
2007 - 4953

Abstract: 4953 FET 175C EIC5964-5
Text: dBc IM3 at PO = 26.5 dBm SCL 100% Tested for DC, RF, and RTH Caution! ESD sensitive device , Output 3rd Order Intermodulation Distortion 2 f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L VDS = 10 V , . Tested with 100 Ohm gate resistor. 2. S.C.L . = Single Carrier Level. 3. Overall Rth depends on case , 0.0578 -41.76 0.436 -157.76 5.8 0.6819 - 144.4 3.1226 -14.08 0.0756 -70.41 , 15 Safe Operating Region 10 f1 or f2 Pout [ S.C.L .] (dBm) Total Power Dissipation (W


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PDF EIC5964-5 40GHz 40GHz 1600mA 4953 4953 FET 175C EIC5964-5
Not Available

Abstract: No abstract text available
Text: Pout = 23.5dBm S.C.L . Thermal Resistance Rth Channel to Case - 5.0 6.0 °C/W , Power Dissipation (W) OUTPUT POWER & IM3 0 50 100 150 200 Input Power ( S.C.L .) (dBm) S.C.L .: Single Carrier Level Case Tem perature (°C) OUTPUT POWER vs. FREQUENCY 36 V DS , 14600 .089 144.4 2.074 35.4 .110 41.5 .554 -21.3 14700 .151 117.3


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PDF FLM1415-3F -46dBc 1415-3F FCSI0598M200
2007 - TSC2004

Abstract: TSC2003 TSC2005 SLAA362 MHz-34MHz
Text: =3) 1410 1444 1120 1147 940 969 S = 28 (Read X/Y/Z and N=7) 2080 2236 1430 1543 1070 1127 S = 60 (Read X/Y/Z and N=15) 3400 3820 2090 2335 1330 1444 , . No power is consumed when there is no I2C activity and both SCL and SDA are high. When the I2C bus , a second can be expressed as: V I IOVDD ^ IOVDD tSCL ) tSDA R pullup (7) Where SCL is the time per second when SCL is low; and SDA is the time per second when SDA is low. The I2C bus line


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PDF SLAA369 TSC2004 TSC2003 TSC2005 SLAA362 MHz-34MHz
2007 - Not Available

Abstract: No abstract text available
Text: =25.5dBm ( S.C.L ) Channel to Case 10V x Idsr x Rth -40 - 2/27/2009 1 ELM7785-4PS C-Band Internally , [dBc] -50 -55 -60 -65 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L . 8.1 GHz 8.5 GHz IM3 , 18 20 22 24 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 -30 -35 IM3 -40 -45 IMD [dBc] -50 -55 -60 -65 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 IM3 , @8.5GHz -30 -35 -40 -45 IMD [dBc] -50 -55 -60 -65 -70 16 18 20 22 24 26 28 30 Output Power [dBm] S.C.L


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PDF ELM7785-4PS ELM7785-4PS
2010 - SUMITOMO 1085

Abstract: ELM7785-4PS SUMITOMO 1710
Text: IM3 f=8.5GHz f=10MHz, 2-tone Test Pout=25.5dBm ( S.C.L ) Rth Rth Channel to Case - , 26 dBm 22 dBm 28 dBm 7.7 GHz 20 22 24 26 28 30 Output Power [dBm] S.C.L . 8.1 GHz 8.5 , Output Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 IMD Performance vs. Output Power by Drain Voltage , Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 16 18 Vd[V]= 8 20 22 24 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 ELM7785-4PS C-Band Internally Matched FET IMD Performance vs


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PDF ELM7785-4PS ELM7785-4PS SUMITOMO 1085 SUMITOMO 1710
scl 1444

Abstract: v 4005
Text: using the two pin l2C protocol. This communication protol uses CLOCK ( SCL ) and DATA I/O (SDA) lines to , x 6 4 8M x 64 PC B-Board L-D IM -144-1 L-D IM -144-2 L-D IM -144-3 L-D IM - 144-4 L x H x T [mm] 6 7 , Semiconductor Group 2 SIEMENS Pin Names AO-Ax DQO - DQ63 RASO, RAS1 CASO - CAS7 WE OE Vcc Vss SCL SDA , ( SCL ) Input/Output capacitance (SDA) C|01 ^ scl C'sda Cm C|2 C\3 - Limit Values max. TBD TBD TBD TBD , CA57 Vss DQ 56 DQ 57 DQ 58 DQ59 Vcc DQ60 DQ61 DQ 62 DQ63 Vss SCL Vcc vcc DQ4 DQ5 DQ6 DQ7 Vss CASO


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PDF HYM64Vx005GC L-DIM-144-1 L-DIM-144-4 2Mx64 scl 1444 v 4005
1997 - mpu5

Abstract: MC74F157AD HS 1621 R25XT68J buffer marking h60 SW dip-4 74F841D KSC221JB transistor c114 R25XT
Text: RD0 RA0 SDA SCL R-Bus Interface to TMC22071A RCSB 2:1 Reset GCSB DA[1:0] DCSB , Information ADCLK CLAMP YOVER[0.9] YOE10 COE10 SDA SCL HS VS DECCLK GY[0.9] GY[0.9 , GHSYNC GVSYNC GHSYNC GVSYNC SA0 SA1 SA2 R1 1 OHM 1/4W CARBON SDA SCL GLSDA SA0 SA1 , JP1 JUMPER SCL SDA BLANK (DAC) DECCLK FB1 F BEAD DVSYNC SCL SDA AN COMP/LUMA SDA SCL GLSDA DHSYNC DVSYNC CVBS[0.7] GRST VCC VALID VREF SA0 DA1 R2 10K


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PDF TMC2068P7C TMC22x5y 10-bit TMC2068P7C TMC22x5y 10-bit TMC22071A TMC2072 mpu5 MC74F157AD HS 1621 R25XT68J buffer marking h60 SW dip-4 74F841D KSC221JB transistor c114 R25XT
1998 - mc74f14d

Abstract: E23-E24 74F821D 74F841D mpu5 65-2068P SIMM72 TP14-TP15 jp6c csc10a-01-472
Text: SDA SCL R-Bus Interface to TMC22071A RCSB 2:1 Reset GCSB DA[1:0] DCSB EPROM Address , reason that a bench power supply with short cable lengths is recommended. 7 8 SDA SCL 15-83-0064 P1 YOE10 COE10 ADCLK CLAMP SCL +5V SDA GND IP_CONN SDA SCL YOE10 COE10 , /SLAVE IXVSYNC IXHSYNC IXPXCK PGM_IN YOVER[0.9] JP1 JUMPER SCL SDA R2 10K R1 1 OHM , DECCLK XRS[0.3] IMASTER/SLAVE HS VS SWW SA0 SA1 SA2 SDA SCL GLSDA AN COMP/LUMA


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PDF TMC2068P7C TMC22x5y 10-bit TMC2068P7C TMC22x5y 10-bit TMC22071A TMC2072 mc74f14d E23-E24 74F821D 74F841D mpu5 65-2068P SIMM72 TP14-TP15 jp6c csc10a-01-472
Not Available

Abstract: No abstract text available
Text: -tone Test Pout=25.5dBm ( S.C.L .) Channel to Case 10V x Idsr x Rth 1 mA 8.5 10.0 - dB , [dBm] S.C.L . 8.1 GHz 8.5 GHz Power Added Efficiency [%] Input Power vs. Output Power, Power , 20 22 24 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 16 Vd[V]= 10 Vd[V]= 8 IMD , 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 18 Vd[V]= 10 7 20 22 24 26 28 30 Output Power [dBm] S.C.L . Vd[V]= 9 Vd[V]= 10 ELM7785-4PS C-Band Internally Matched FET IMD Performance


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PDF ELM7785-4PS ELM7785-4PS
2007 - EMM5078X

Abstract: 70GHz EMM5078
Text: RLout - 350 -10 -10 450 - mA dB dB 2-Tone Test, Pout=15dBm S.C.L . Note : RF parameter sample size 10pcs. Criteria (accept/reject)=(0/1) G.C.P.:Gain Compression Point S.C.L .:Single , , IDD(DC)=350mA, @Po=15dBm S.C.L . -10 -20 Solid Line : IM3 Dash Line : IM5 -15 -25 -20 -30 , 152.7 35.483 144.4 36.428 135.9 127.1 37.308 38.210 118.2 39.127 108.9 40.012 99.5 40.906 , 0.069 -136.6 0.012 170.8 0.006 164.6 0.001 - 144.4 0.002 -47.6 0.004 142.7 9 S12 MAG


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PDF EMM5078X EMM5078X D0158 1906B, 70GHz EMM5078
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