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Part Manufacturer Description Datasheet Download Buy Part
LT3519EMS-1#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS-1#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519EMS#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS-2#TRPBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C
LT3519IMS-2#PBF Linear Technology LT3519/LT3519-1/LT3519-2 - LED Driver with Integrated Schottky Diode; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C

schottky DIODE MOTOROLA B14 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1998 - schottky DIODE MOTOROLA B14

Abstract:
Text: © Motorola Schottky Power Rectifier Data Motorola , Inc. 1998 1 10 TJ = 85°C 1.0 TJ = 125 , . Current Derating 1.6 Figure 6. Forward Power Dissipation Motorola Schottky Power Rectifier Data , ) Figure 8. Capacitance Motorola Schottky Power Rectifier Data 3 MBRA140T3 PACKAGE DIMENSIONS , * MBRA140T3/D Motorola Schottky Power Rectifier Data Motorola , MOTOROLA Order this document by MBRA140T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview


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PDF MBRA140T3/D MBRA140T3 MBRA140T3/D* schottky DIODE MOTOROLA B14 Diode Motorola B14 Motorola B14 motorola diode marking B14 100E3 403B Diode B14 Motorola MBRA140T3
schottky DIODE MOTOROLA B14

Abstract:
Text: Derating Figure 6. Forward Power Dissipation 2 Motorola Schottky Power Rectifier Data M B R A , , REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Motorola Schottky Power Rectifier Data 3 M B R , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRA140T3/D Product Preview Surface Mount Schottky Power Rectifier M BR A 140T3 SMA Power Surface Mount Package . . . em p lo ying th e S cho ttky B arrier principle in a large area m e ta l-to -s ilic o n p o w e r diode . State


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PDF MBRA140T3/D 140T3 schottky DIODE MOTOROLA B14 Diode Motorola B14 Diode B14 Motorola
1998 - DIODE MOTOROLA B14

Abstract:
Text: critical to the system. · · · · · · Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS , MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal­to­silicon power diode . State­of­the­art geometry features epitaxial construction with oxide passivation , Lead · Marking: B14 CASE 403A­03 MAXIMUM RATINGS Rating Symbol Value Unit VRRM


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PDF MBRS140T3/D MBRS140T3 DIODE MOTOROLA B14 403A-03 schottky DIODE MOTOROLA B14 motorola diode marking B14 MBRS140T3
1999 - schottky DIODE MOTOROLA B14

Abstract:
Text: critical to the system. · · · · · · Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS , MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal­to­silicon power diode . State­of­the­art geometry features epitaxial construction with oxide passivation , Shipped in 12 mm Tape and Reel, 2500 units per reel · Cathode Polarity Band · Marking: B14 CASE


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PDF MBRS140T3/D MBRS140T3 schottky DIODE MOTOROLA B14 Diode Motorola B14 b14 smb diode MBRS140T3
1998 - schottky DIODE MOTOROLA B14

Abstract:
Text: , MMS3N03HD Schottky Diode : MBR140 Note: No models were available for the MMDF2P02HD, MMDF2C02E, and , Rectifier Transistor and the Flyback Diode (MMS5N03HD transistors and MBR140 Schottky diodes respectively , Schottky Current (Iout = 1 Amp) from the Physical Circuit MOTOROLA 5 AN1631 Figure 9 shows the , the Schottky takes the full current during the dead time and no body diode current is present. This , Transistor and Schottky 1.5 I(vmon_syncrect) SR TRANSISTOR I(dflyback) SCHOTTKY DIODE 1.0 1.0 0.5


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PDF AN1631/D AN1631 AN1520. schottky DIODE MOTOROLA B14 schottky DIODE MOTOROLA B12 kf 203 transistor motorola power transistor 7752 MBR140 equivalent Motorola transistors 7752 pspice model TOTEM POLE DIODE MOTOROLA B14 pspice model gate driver DIODE MOTOROLA B13
schottky DIODE MOTOROLA B14

Abstract:
Text: Reel, 2500 units per reel Cathode Polarity Band Marking: B14 M BRS140T3 Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 40 VOLTS Mechanical Characteristics: CASE 403A-03 SMB , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBRS140T3/D Surface Mount Schottky Power Rectifier . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode . S ta te -o f-th e -a rt geometry features epitaxial construction with oxide passivation and


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PDF MBRS140T3/D S140T3 03A-03 schottky DIODE MOTOROLA B14 b14 smb diode motorola diode marking B14 BRS140T3
1996 - 00FF

Abstract:
Text: , unless estimated, were derived using the procedure described in Motorola Reliability Report 7843 , (case) surface (JC) and from the case to the MOTOROLA DSP56005 Data Sheet 77 Design , pull-down resistors 78 DSP56005 Data Sheet MOTOROLA Design Considerations Host Programming , byte registers will be stable. MOTOROLA HC, HREQ, DMA, HF3, HF2, TRDY, TXDE, and RXDF status , be read twice and checked for consensus. MOTOROLA Design Considerations Application Examples


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PDF DSP56005 DSP56005 DSP56005PV50 00FF LS09 MBD301 MC68000
DIODE MOTOROLA B13

Abstract:
Text: high speed method of comparing large words. 4-BIT MAGNITUDE COMPARATOR FASTTM SCHOTTKY TTL · , Clamp Diode Voltage ­1.2 V VCC = MIN, IIN = ­18 mA VOH Output HIGH Voltage V IOH = , B14 L IA < B IA = B A14 IA > B B13 A13 B3 A3 B3 A3 B12 A12 B2 B2 , ELECTRICAL CHARACTERISTICS LAST SHIP 30/09/99 MC54/74F85 LAST SHIP 30/09/99 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty


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PDF MC54/74F85 DIODE MOTOROLA B13 schottky DIODE MOTOROLA B13 74f85 schottky DIODE MOTOROLA B12
1999 - B0916

Abstract:
Text: speed method of comparing large words. 4-BIT MAGNITUDE COMPARATOR FASTTM SCHOTTKY TTL LIFETIME , VIK VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output HIGH Voltage 54, 74 74 , B15 A15 B14 L A14 B3 A3 B2 A2 B1 A1 B0 A0 IA < B IA = B IA > B AB NC The parallel , a trademark of Motorola , Inc. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability


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PDF MC54/74F85 B0916 schottky DIODE MOTOROLA B14 schottky DIODE MOTOROLA B12
2014 - B14 diode on semiconductor

Abstract:
Text: TSF30U100C thru TSF30U120C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power , -220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature , forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT V 30 IF(AV) A 15 A 10000 V/μs VAC


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PDF TSF30U100C TSF30U120C 2011/65/EU 2002/96/EC ITO-220AB D1408065 B14 diode on semiconductor
2014 - Not Available

Abstract:
Text: TST30H150CW thru TST30H200CW Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low , -220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature , rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TST30H200CW UNIT VRRM Maximum repetitive peak reverse voltage


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PDF TST30H150CW TST30H200CW 2011/65/EU 2002/96/EC O-220AB D1408068
1994 - irf44z

Abstract:
Text: eliminating the need for a parallel Schottky diode in some cases. Two transistors are required in a typical , (WATTS) 0.1 0.01 0.001 0.0001 Schottky Rectifier Diode Power Loss 0.1 0.01 0.001 0.0001 Schottky Rectifier Diode Power Loss 0.00001 Synchronous Rectifier Synchronous Rectifier , vf = forward drop of the Schottky diode , Io = output current, T = period (1/f), and D = duty cycle , this diode versus a parallel Schottky for operation during synchronous rectifier transistor "dead


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PDF AN1520/D AN1520 AN1520/D* irf44z 3525 PWM 5n03 IRFZ44 parallel two transistor forward AN1520 5bp transistor making MTP75N03HDL 2p02 IRFZ44 equivalent
1997 - transistor 11a

Abstract:
Text: capacitor D1 1 Schottky diode Motorola MBR0530 D2 1 Schottky diode Motorola MBRS140T3 , and one Schottky rectifier for power conversion. The Schottky rectifier acts as a freewheeling diode , synchronous rectifier MOSFET turns on, the current will flow through the MOSFET instead of the Schottky diode , proportional to the diode 's forward voltage drop. The power dissipation of the best Schottky diode with less , Schottky freewheeling diode used in the synchronous rectification output circuit is to provide a


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PDF AN1547/D AN1547 AN1547/D* transistor 11a Nippon capacitors MTD20N03HDL MOSFET and parallel Schottky diode MBRS340T3 MBRS140T3 MBR0530 MAX797 filter circuit using mosfet V/AN1547
2014 - Not Available

Abstract:
Text: TSF20U100C Taiwan Semiconductor Dual High-Voltage Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower , -220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature , average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak reverse voltage


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PDF TSF20U100C 2011/65/EU 2002/96/EC ITO-220AB D1408026
2014 - Not Available

Abstract:
Text: TSF10M45C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower , definition TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency , reverse voltage per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TSF10M45C UNIT


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PDF TSF10M45C 2011/65/EU 2002/96/EC ITO-220AB D1408066
2014 - Not Available

Abstract:
Text: TSSA3U45 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , load per diode IFSM 50 A Min. Maximum instantaneous forward voltage per diode (Note 1) IF = 3A Maximum instantaneous reverse current per diode at rated reverse voltage TYP. MAX , resistance per diode Operating temperature range Storage temperature range IR VDC V 32 V O , Test with Pulse Width=300 μs, 1% Duty Cycle Document Number: DS_D1401011 Version: B14


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PDF TSSA3U45 J-STD-020 2011/65/EU 2002/96/EC DO-214AC JESD22-B102 D1401011
2014 - Not Available

Abstract:
Text: TSPB15U50S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as , superimposed on rated load per diode IFSM 200 A MIN IF = 7.5A Maximum instantaneous forward voltage per diode (Note 1) IF = 7.5A IF = 15A Maximum instantaneous reverse current per diode at , resistance per diode Operating temperature range Storage temperature range IR VDC - - 0.48


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PDF TSPB15U50S J-STD-020 2011/65/EU 2002/96/EC D1407012
2014 - Not Available

Abstract:
Text: TSPB10U45S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as , superimposed on rated load per diode IFSM 275 A MIN IF = 5A Maximum instantaneous forward voltage per diode (Note 1) IF = 10A IF = 5A IF = 10A TJ = 125°C Maximum instantaneous reverse current per diode at rated TJ = 25°C reverse voltage TJ = 125°C Maximum DC reverse voltage Typical


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PDF TSPB10U45S J-STD-020 2011/65/EU 2002/96/EC D1407011
2014 - Not Available

Abstract:
Text: TSF30L45C creat by ART Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower , -220AB TYPICAL APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature , average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak reverse voltage


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PDF TSF30L45C 2011/65/EU 2002/96/EC ITO-220AB D1408030
2014 - Not Available

Abstract:
Text: TSN520M60 Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , TSC own patented trench mos schottky rectifier suited for switch mode power supply and high frequency , , 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A Conditions Instantaneous forward voltage per diode (Note 2) IF = 10A IF = 20A IF = 10A IF = 20A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C MIN TJ = 25°C TJ = 125Â


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PDF TSN520M60 J-STD-020 2011/65/EU 2002/96/EC D1408069
2014 - Not Available

Abstract:
Text: TSP15U100S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies , load per diode IFSM 150 A MIN MAX - 0.49 - IF = 7.5A TJ = 25°C - 0.52 , = 15A Maximum instantaneous forward voltage per diode (Note 2) TYP IF = 5A - 0.56 , diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance Operating


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PDF TSP15U100S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408045
2014 - Not Available

Abstract:
Text: TSP12U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky , Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power supplies , diode IFSM 150 A MIN IF = 6A Maximum instantaneous forward voltage per diode (Note 1) IF = 12A IF = 6A IF = 12A Maximum instantaneous reverse current per diode at rated reverse , Pulse Width=300μs, 1% Duty Cycle Document Number: DS_D1408044 Version: B14 TSP12U120S Taiwan


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PDF TSP12U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408044
2014 - 10U100

Abstract:
Text: TSP10U100S thru TSP10U120S Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power , APPLICATIONS Trench Schottky barrier rectifier are designed for high frequency miniature switched mode power , superimposed on rated load per diode IFSM 140 A V TYP IF = 5A Maximum instantaneous forward voltage per diode (Note 1) IF = 10A IF = 5A IF = 10A Maximum instantaneous reverse current per


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PDF TSP10U100S TSP10U120S J-STD-020 2011/65/EU 2002/96/EC O-277A D1408038 10U100 TSP10U120S
1999 - transistor A106

Abstract:
Text: Molex Capacitor, ceramic Capacitor, ceramic Capacitor, ceramic Connector, BNC Diode , Schottky A6S , on the electronic load; b. Wait for 15 minutes and then measure the temperature on each FET and diode , . Comment: Typically a MOSFET and the diode it connects to have similar temperatures. The temperatures of , B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 , Yuden Murata Murata Murata AMP Motorola Falco (305)205Inductor 8559 Bipolar Transistor, NPN Motorola


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PDF LM2639 T025A2 OT-23 SMDIP-10 SO-24 205Inductor A6S-0104 transistor A106 transistor PNP A105 transistor pnp a110 TRANSISTOR A107 a69 156 transistor A94 TRANSISTOR A114 TRANSISTOR a105 A107 capacitor TRANSISTOR A98 motorola mosfet
2p102

Abstract:
Text: . Motorola , Inc. 1997 (M ) MOTOROLA M M D FS2P102 THERMAL CHARACTERISTICS - SCHOTTKY AND MOSFET , Forward Voltage 6 Motorola TMOS Product Preview Data M M D FS2P102 TYPICAL SCHOTTKY ELECTRICAL , Motorola TMOS Product Preview Data 7 M M DFS2P102 TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS , 1.0E+02 AMBIENT 1.0E+03 Figure 22. Schottky Thermal Response 8 Motorola TMOS Product , MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDFS2P102/D Designer's TM Data


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PDF MMDFS2P102/D 2p102 dfs2p10
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