The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1332CNW Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory
LT1332CNW#PBF Linear Technology Wide Supply RangeLow Power RS232 Transceiver with 12V VPP Output for Flash Memory
LTC1262IS8#PBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262IS8 Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LTC1262CS8#TRPBF Linear Technology LTC1262 - 12V, 30mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1263IS8#PBF Linear Technology LTC1263 - 12V, 60mA Flash Memory Programming Supply; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C

samsung nor flash Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - K5L2833ATA

Abstract: QSC6030 samsung nor flash k5l2833 WS128N K8A2815ETC samsung SPANSION samsung flash controller k5l28
Text: Samsung NOR Flash Databook - Spansion NOR Flash Databook - Mobile Planning Group Materials , . SEC(128Mb C-die) vs Spansion(WS128_N) Comparison Between Samsung NOR flash and Spansion, there are , SEC-Mobile-ROM Using SEC K8A2815ETC & Spansion WS128N Compatibility For NOR Flash Application Note Version 1.0, April 2009 Samsung Electronics Copyright 2009 Samsung Electronics Co.,LTD , difference about command set, configuration register and block size etc. between SEC and Spansion NOR Flash


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PDF K8A2815ETC WS128N K5L2833ATA QSC6030 samsung nor flash k5l2833 K8A2815ETC samsung SPANSION samsung flash controller k5l28
2009 - samsung nor flash

Abstract: NOR FLASH internal flash corruption
Text: Program Method of NOR Flash Version 1.0, Apr-2009 Samsung Electronics Copyright 2009 Samsung , References - Samsung NOR Flash Data sheet Samsung Electronics Co; LTD 3 Table of Contents 1. Variable program method of NOR Flash . 5 2 , . 8 4 1. Variable program method of NOR Flash . Samsung NOR flash devices provide variable , Purpose This application note will guide you to variable method of NOR flash and performance comparison


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PDF Apr-2009 80us/11 32Words 64Words samsung nor flash NOR FLASH internal flash corruption
2009 - "at command" Samsung

Abstract: samsung nor flash 555h NOR FLASH
Text: Protection Mode Lock References - Samsung NOR Flash Data Sheet - Samsung Mobile Planning Group , SEC-Mobile-ROM Protection Sequence For NOR Flash Application Note Version 1.0, May 2009 , note will guide you to use Protection operation of NOR Flash in the right direction. It describes how , Protection & Un-protection . 5 NOR Flash Block Protection , , Vpp is always connected with VIH, VIL or VID and WP is VIH or VIL. 2. NOR Flash Block Protection


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PDF 555h/AAh 2AAh/55h 555h/90h XXX/00h "at command" Samsung samsung nor flash 555h NOR FLASH
2009 - samsung nor flash

Abstract: CM1453-04CP CMD
Text: Acronyms Description Time Window Erase Time out Window References - Samsung NOR Flash Databook Samsung Electronics Co; LTD 3 Table Of Contents 1. NOR Flash directions for use of Erase Suspend , SEC-Mobile-ROM Erase Time Window For NOR Flash Application Note Version 1.0, April 2009 , note will guide you to use Erase-suspend operation of NOR Flash in the right direction. It describes , to use another CMD guideline 1.3. NOR Flash Block Erase Operation Flow Chart 1.4 Acceptable Command


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samsung nor flash

Abstract: sensing "nor flash memory" samsung NOR Flash read cycle
Text: Technology The Leader in Memory Technology Status Bit Read Issue ! Introduce Samsung 's Nor Flash , progresses. To check whether the operation (Erase or Program) is completed or not in Nor Flash Memory , user , Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Planning , Status Bit Read Issue FLASH MEMORY STATUS FLAGS Undefined data can be read when the operation is , Leader in Memory Technology Status Bit Read Issue Nor Unknown Data Issue Product Planning &


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K9HCG08U5M

Abstract: K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
Text: SAMSUNG " Mobile Solution Forum 2007 SAMSUNG Mobile Memory |C| 11 I m Contents NAND Flash 03 NOR , . Samsung 's NOR flash is widely recognized for its superior features. The company also provides a total , Mobile Memory m m. m ) * Samsung NOR Flash Ordering Information Density Part Number Org. Volt. Temp Speed , interface. Samsung OneNAND1", takes both advantages from high-speed data read function of NOR flash and the , Samsung 's NAND Flash has firmly established itself as the key solution in many popular yet relatively new


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PDF 120GB 128MB 256MB 128MB 512MB K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 K4M56323PI MCCOE32GQMPQ-M K4M56163PI movinand
1997 - BA258

Abstract: ba146 BA148 ba198 BA204
Text: FLASH MEMORY K 8 S 28 1 5 E T B - D E 7C Samsung NOR Flash Memory Device Type Multiplexed Burst , K8S2815ET(B)B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS , Revision 1.2 September, 2006 K8S2815ET(B)B NOR FLASH MEMORY Document Title 128M Bit (8M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 Preliminary , NOR FLASH MEMORY 128M Bit (8M x16) Muxed Burst , Multi Bank NOR Flash Memory FEATURES · Single


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PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204
1997 - SAMSUNG NOR Flash

Abstract: No abstract text available
Text: current in the extended temperature ranges. The K8S6415E NOR Flash Memory is created by using Samsung , T B - D E 7C Samsung NOR Flash Memory Device Type Multiplexed Burst Access Time Refer to Table 1 , K8S6415ET(B)B NOR FLASH MEMORY 64Mb B-die SLC NOR Specification INFORMATION IN THIS , Revision 1.2 September, 2006 K8S6415ET(B)B NOR FLASH MEMORY Document Title 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 1.0 Initial Issue


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PDF K8S6415ET 00003FH 00007FH 0000BFH 000000H 44-Ball SAMSUNG NOR Flash
1997 - BA260

Abstract: BA139 BA138 BA138 diode BA205 BA169 ba209 BA251 BA114 ba148
Text: NOR FLASH MEMORY ORDERING INFORMATION K 8 A 28 1 5 E T B - F E 7C Samsung NOR Flash Memory , K8A2815ET(B)B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS , Revision 1.2 September, 2006 K8A2815ET(B)B NOR FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date , added September 08, 2006 2 Revision 1.2 September, 2006 K8A2815ET(B)B NOR FLASH MEMORY


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PDF K8A2815ET 128Mb 54MHz A0-A22 00000FH 00001FH 00002FH 000000H BA260 BA139 BA138 BA138 diode BA205 BA169 ba209 BA251 BA114 ba148
2006 - samsung nor flash

Abstract: K8A3215ET 555H
Text: current in the extended temperature ranges. The K8A3215E NOR Flash Memory is created by using Samsung , MEMORY K8A3215ET(B)E ORDERING INFORMATION K 8 A 32 1 5 E T E - D E 7C Samsung NOR Flash Memory , NOR FLASH MEMORY K8A3215ET(B)E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT , Revision 1.1 September, 2006 NOR FLASH MEMORY K8A3215ET(B)E Document Title 32M Bit (2M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date


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PDF K8A3215ET 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh 003000h-003FFFh 002000h-002FFFh samsung nor flash 555H
2007 - K8P5615UQA

Abstract: K8p5615 ba15128 samsung nor flash 128KW 8a000 Samsung MCP BA133 BA132 BA127 Diode
Text: and extended temperature ranges. The K8P5615UQA NOR Flash Memory is created by using Samsung , ORDERING INFORMATION K 8 P 56 15 U Q A - P I 4D Samsung NOR Flash Memory Access Time 4D = 70ns , K8P5615UQA NOR FLASH MEMORY 256Mb A-die Page NOR Specification INFORMATION IN THIS , Revision 1.1 July 2007 K8P5615UQA NOR FLASH MEMORY Document Title 256M Bit (16M x16) Page Mode / Multi-Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Target


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PDF K8P5615UQA 256Mb 56-PIN 50TYP K8P5615UQA K8p5615 ba15128 samsung nor flash 128KW 8a000 Samsung MCP BA133 BA132 BA127 Diode
1997 - samsung nor flash

Abstract: BA102 BA127 Diode BA134 samsung nor K8A6415EBB
Text: T B - D E 7C Samsung NOR Flash Memory Access Time Refer to Table 1 Device Type , NOR FLASH MEMORY K8A6415ET(B)B 64Mb B-die SLC NOR Specification INFORMATION IN THIS , Revision 1.1 September, 2006 NOR FLASH MEMORY K8A6415ET(B)B Document Title 64M Bit (4M x16) Sync Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date , condition within 200ns." is added September 08, 2006 2 Revision 1.1 September, 2006 NOR FLASH


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PDF K8A6415ET couldre17. 54MHz A0-A21 00000FH 00001FH 00002FH 000000H samsung nor flash BA102 BA127 Diode BA134 samsung nor K8A6415EBB
1997 - samsung nor flash

Abstract: K8S3215ET 2269H NOR FLASH
Text: NOR Flash Memory is created by using Samsung 's advanced CMOS process technology. This device is , , 2006 NOR FLASH MEMORY K8S3215ET(B)E ORDERING INFORMATION K 8 S 32 15 E T E - D E 7C Samsung , NOR FLASH MEMORY K8S3215ET(B)E 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT , Revision 1.1 September, 2006 NOR FLASH MEMORY K8S3215ET(B)E Document Title 32M Bit (2M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date


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PDF K8S3215ET 0000h 128words 000000h-00007Fh 44-Ball samsung nor flash 2269H NOR FLASH
2010 - Not Available

Abstract: No abstract text available
Text: Samsung NOR Flash Memory Device Type S : Multiplexed Burst Density (Note) 66 : 64Mbits 1) 68 : 64Mbits 2 , Rev. 1.2, Sep. 2010 K8S6815ET(B)D 64Mb D-die SLC NOR FLASH 7.5x5, 44FBGA, 8M Partition, x16 , datasheet History Rev. 1.2 NOR FLASH MEMORY Revision History Revision No. 0.0 1.0 1.1 1.2 - , Editor - -2- K8S6815ET(B)D datasheet Rev. 1.2 NOR FLASH MEMORY Table Of Contents 64Mb D-die SLC NOR FLASH 1.0 FEATURES


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PDF K8S6815ET 44FBGA, 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh 040000h-047FFFh 038000h-03FFFFh
Not Available

Abstract: No abstract text available
Text: T 9 Samsung NOR Flash Memory Operating Voltage Range 2.7V to 3.6V Access Time 9 = 90 ns , KM28U800-T FLASH MEMORY 8M Bit (1M x8/512K x16) NOR Flash Memory FEATURES GENERAL , . The KM28U800 NOR Flash Memory is created by using Samsung′s advanced CMOS process technology. This , , is an 8Mbit NOR-type Flash Memory organized as 1M x8 or 512K x16. The memory architecture of the , output WE Write Enable Vcc Power Supply VSS Ground N.C No Connection SAMSUNG


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PDF KM28U800-T x8/512K 200nA 48-PIN 1220F 047MAX
2008 - Not Available

Abstract: No abstract text available
Text: NOR FLASH MEMORY The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG , K8S3215E NOR Flash Memory is created by using Samsung 's advanced CMOS process technology. 3.0 PIN , Samsung NOR Flash Memory Device Type S : Multiplexed Burst Density 30 : 32Mbits1), 31 : 32Mbits2) 32 , K8S3215ET(B)F NOR FLASH MEMORY 32Mb F-die SLC NOR Specification INFORMATION IN THIS , / Multi Bank NOR Flash Memory NOR FLASH MEMORY Revision History Revision No. 0.0 Initial issue


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PDF K8S3215ET 0000h 256words 000000h-0000FFh 44-Ball
2008 - K8S2815ET

Abstract: K8S2815E ba148 BA213 samsung nor flash BA149
Text: ranges. The K8S2815E NOR Flash Memory is created by using Samsung 's advanced CMOS process technology , E T(B) C - D E 7E Samsung NOR Flash Memory Access Time Refer to Table 1 Operating Temperature , K8S2815ET(B)C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS , . 1 Revision 1.2 November 2008 K8S2815ET(B)C NOR FLASH MEMORY Document Title 128M Bit (8M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History


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PDF K8S2815ET 128Mb 00h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8S2815E ba148 BA213 samsung nor flash BA149
1997 - Not Available

Abstract: No abstract text available
Text: extended temperature ranges. The K8P5615UQA NOR Flash Memory is created by using Samsung 's advanced CMOS , MEMORY K 8 P 56 1 5 U Q A - D I 4D Samsung NOR Flash Memory Device Type Page Mode Access Time 4D = , K8P5615UQA Target Information FLASH MEMORY 256Mb A-die Page NOR Specification INFORMATION , (16M x16) Page Mode / Multi-Bank NOR Flash Memory Revision History Revision No. History 0.0 0.1 , x16) Page Mode / Multi-Bank NOR Flash Memory FEATURES · Single Voltage, 2.7V to 3.6V for Read and


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PDF K8P5615UQA 256Mb 500000h-51FFFFh 4E0000h-4FFFFFh 4C0000h-4DFFFFh 4A0000h-4BFFFFh 480000h-49FFFFh 460000h-47FFFFh 440000h-45FFFFh 420000h-43FFFFh
2006 - Not Available

Abstract: No abstract text available
Text: Preliminary K8A3215ET(B)E ORDERING INFORMATION FLASH MEMORY K 8 A 32 1 5 E T E - D E 7C Samsung NOR , Preliminary K8A3215ET(B)E FLASH MEMORY 32Mb E-die NOR Specification INFORMATION IN THIS , x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.5 , FLASH MEMORY 32M Bit (2M x16) Synchronous Burst , Multi Bank NOR Flash Memory GENERAL DESCRIPTION , . The K8A3215E NOR Flash consists of sixteen banks. This device is capable of reading data from one bank


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PDF K8A3215ET 0A0000h-0A7FFFh 098000h-09FFFFh 090000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh
1997 - BA99

Abstract: No abstract text available
Text: ranges. The K8A6415E NOR Flash Memory is created by using Samsung 's advanced CMOS process technology , FLASH MEMORY K 8 A 64 1 5 E T B - D E 7C Samsung NOR Flash Memory Device Type De-Multiplexed Burst , Preliminary K8A6415ET(B)B FLASH MEMORY 64Mb B-die SLC NOR Specification INFORMATION IN , x16) Sync Burst , Multi Bank NOR Flash Memory Revision History Revision No. History 0.0 0.5 Initial , , Multi Bank NOR Flash Memory GENERAL DESCRIPTION The K8A6415E featuring single 1.8V power supply is a


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PDF K8A6415ET 54MHz A0-A21 00000FH 00001FH 00002FH 000000H BA99
2010 - FBGA 11x13

Abstract: k8p2716 K8P2716UZC
Text: extended temperature ranges. The K8P2716UZB NOR Flash Memory is created by using Samsung 's advanced CMOS , 4C Samsung NOR Flash Memory Access Time 4C : 65ns/25ns 4D : 70ns/30ns 4E : 80ns/30ns Operating , Rev. 1.0, Jan. 2010 K8P2716UZC 128Mb C-die Page NOR Flash 56Pin TSOP(20x14mm), 64ball FBGA , changed from 00FFh to 007Fh. - Specification finalized Rev. 1.0 NOR FLASH MEMORY Revision History , , 2010 Final - -2- K8P2716UZC datasheet Rev. 1.0 NOR FLASH MEMORY Table Of


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PDF K8P2716UZC 128Mb 56Pin 20x14mm) 64ball 11x13, 64-Ball 60Solder FBGA 11x13 k8p2716 K8P2716UZC
1997 - Not Available

Abstract: No abstract text available
Text: extended temperature ranges. The K8S3215E NOR Flash Memory is created by using Samsung 's advanced CMOS , , 2006 K8S3215ET(B)E ORDERING INFORMATION FLASH MEMORY K 8 S 32 15 E T E - D E 7C Samsung NOR , K8S3215ET(B)E FLASH MEMORY 32Mb E-die NOR Specification INFORMATION IN THIS DOCUMENT IS , Bank NOR Flash Memory Revision History Revision No. History 0.0 0.5 1.0 Initial Issue Preliminary , ) Muxed Burst , Multi Bank NOR Flash Memory GENERAL DESCRIPTION The K8S3215E featuring single 1.8V power


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PDF K8S3215ET K8S3215EBE) 128words 000000h-00007Fh 0000h 44-Ball
1997 - BA339

Abstract: AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
Text: K8F12(13)15ET(B)M ORDERING INFORMATION NOR FLASH MEMORY K 8 F 12 1 5 E T M - F E 1F Samsung NOR , K8F12(13)15ET(B)M NOR FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS , Revision 1.1 September, 2006 K8F12(13)15ET(B)M NOR FLASH MEMORY Document Title 512M Bit (32M x16) Muxed Burst , Multi Bank MLC NOR Flash Memory Revision History Revision No. History 0.0 0.1 Initial , 2 Revision 1.1 September, 2006 K8F12(13)15ET(B)M NOR FLASH MEMORY 512M Bit (32M x16


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PDF K8F12 512Mb couldresul0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh 0090000h-009FFFFh 0080000h-008FFFFh 0070000h-007FFFFh BA339 AMD+Athlon+64+X2+pin+diagram kuhnke+z396.64
1997 - Not Available

Abstract: No abstract text available
Text: FLASH MEMORY ORDERING INFORMATION K 8 F 56 1 5 E T M - F E 1F Samsung NOR Flash Memory Access , K8F56(57)15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS , Revision 1.1 September, 2006 K8F56(57)15ET(B)M NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank MLC NOR Flash Memory Revision History Revision No. History Draft Date , K8F56(57)15ET(B)M NOR FLASH MEMORY Revision No. History Draft Date Remark Preliminary


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PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh
1997 - Not Available

Abstract: No abstract text available
Text: industrial temperature ranges. The K8D3216U NOR Flash Memory is created by using Samsung 's advanced CMOS , 3x 1 6 U T C - T I 0 7 Samsung NOR Flash Memory Device Type Dual Bank Boot Block Access Time 07 = 70 , K8D3x16UTC / K8D3x16UBC NOR FLASH MEMORY Document Title 32M Bit (4M x8/2M x16) Dual Bank NOR , NOR FLASH MEMORY 32M Bit (4M x8/2M x16) Dual Bank NOR Flash Memory FEATURES · Single Voltage , program capability. The K8D3216U NOR Flash consists of two banks. This device is capable of reading data


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PDF K8D3x16UTC K8D3x16UBC 48TSOP1 16M/16M 48FBGA 200ns. 08MAX
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