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uv flame sensor

Abstract: thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
Text: important properties in comparison to Si and GaAs is shown below: Wide Energy Bandgap (eV) 4H-SiC: 3.26 6H , Bandgap Thermal Conductivity Lattice Parameters Mohs Hardness Single Crystal 4H Hexagonal 3.26 eV , (Recommended Material: 4H- SÌC ) High Power Devices (Recommended Material: 4H- SÌC ) High Temperature Devices (Recommended Material: 6H- SÌC or 4H- SÌC ) Optoelectronic Devices (Recommended Material: 6H- SÌC or 4H- SÌC ) Nitride Deposition (Recommended Material: 6H- SÌC ) Solid state phased array radar systems Communication


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PDF 2771J 161-IMO uv flame sensor thermal conductivity sensor 27713 4h sic ballistic sensor Cree Microwave cree package structure X 1017 sac 326 2771J
2008 - Not Available

Abstract: No abstract text available
Text: %) Sine Amplitude Converter ( SAC ) operating from a 360 to 400 Vdc primary bus to deliver an isolated 45-50 V nominal, unregulated secondary. The SAC offers a low AC impedance beyond the bandwidth of most , located at the input to the SAC . Since the K factor of the VIB0002TFJ is 1/8, that capacitance value can , SYMBOL CONDITIONS / NOTES L W H Vol F PD MAX UNIT 32.6 / 1.29 22.3 / 0.89 7.0 , PATTERN ( 3.26 ) 0.128 (15.74) 0.620 (7.87) 0.310 (1.38) TYP 0.054 (8.94) 0.352 (0.51


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PDF VIB0002TFJ
array resistor mtbf

Abstract: No abstract text available
Text: © Output resistance (ambient) ROUT_AMB TC = 25°C, IOUT = 10 A 20.4 26.5 32.6 mÎ , fSW_RP 3.14 3.20 3.26 MHz Switching frequency Output ripple frequency 5 7.5 96.0 , 1.63 MHz fSW_RP 2.74 3.00 3.26 MHz Switching frequency Output ripple frequency , full functionality and is key to achieving power density. R Vin + – SAC K = 1/32 Vout A typical SAC can be simplified into the model above. At no load: VOUT = VIN • K (1) The


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PDF MVTM36 array resistor mtbf
2009 - Not Available

Abstract: No abstract text available
Text: Module is a high efficiency (>96%) Sine Amplitude Converter ( SAC ) operating from a 330 to 365 Vdc primary bus to deliver an isolated 41.25 - 45.63 V nominal, unregulated secondary. The SAC offers a low , normally located at the input of a regulator can be located at the input to the SAC . Since the K factor , Finish [a] MAX 32.6 / 1.29 22.3 / 0.89 7.0 / 0.27 No Heatsink Weight TYP 32.5 / 1.28 , PATTERN ( 3.26 ) 0.128 (15.74) 0.620 (7.87) 0.310 (1.38) TYP 0.054 (8.94) 0.352 (0.51


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PDF VIB0003TFJ
Not Available

Abstract: No abstract text available
Text: . CASE 5A 1«d tOfs I (KVa t - Pita Tim» - sac 1m .375 ± .010 FIGURE 1 PEAK PULSE POWER , 15KP24 15KP24A 15KP26 1SKP26A 24 24 26 26 26.726.72R928.9- 32.6 295 35J 31.9 5 5 5 , - 326 -295 -353 -319 5 5 5 5 428 388 464 419 10 10 10 10 35 39 32 36 324


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PDF D0050ti3 1000//sec Repetiti299 15KP240 15KP240A 1SKP260A 15KP280 15KP280A
Not Available

Abstract: No abstract text available
Text: ) ROUT_AMB TC = 25°C, IOUT = 10 A 20.4 26.5 32.6 mΩ Output resistance (hot) ROUT_HOT , fSW_RP 3.14 3.20 3.26 MHz Switching frequency Output ripple frequency MIL-HDBK , full functionality and is key to achieving power density. R Vin + – SAC K = 1/32 Vout A typical SAC can be simplified into the model above. At no load: Figure 2 — K = 1/32 Sine , and VOUT becomes: K represents the “turns ratio” of the SAC . Rearranging Eq (1): K =


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PDF MV036A
UTC 1316

Abstract: AVANTEK utc 561 db opera 215 20247 rf transistor Avantek* UTC 1p2 transistor 11-903 AVANTEK utc UTC 1316 amplifier Avantek amplifier UTC
Text: Tempera uie. S£c "^9 l n1Pera,U;e.-62°C +15°°C MTBF (MIL-HDBK-217E, Aur @ , 144.3 -20.528 -26.0 .083 140.6 -20.391 -29.8 .065 140.9 -20.247 - 32.6 .045 150.6 -20.018 " -37.0


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2009 - marking code B9 DG SMD

Abstract: smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB
Text: 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.37 2.67 2.97 3.26 3.56 3.86 4.25 4.65 , 2.37 2.67 35.64 38.61 2.97 3.26 3.56 3.86 42.57 4.25 4.65 50.49 5.04 http://www.nxp.com/ 27 , 70215 BZX84-B11,235 BZX84-B12,215 SAC - Taiwan JAPAN CHIP ONE STOP EU EU AS NA NA AS ASIA NA NA NA EU , BZX84-B18,215 AS AS NA NA EU NA NA AS ASIA SAC - Taiwan ARROW ASIA PAC LTD FUTURE ELECTRONICS- ASIA MOUSER , Kong/China JAPAN CHIP ONE STOP ASIA BZX84-B33 9337 704 60215 BZX84-B33,215 NA NA AS AS ASIA NA SAC -


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PDF M3D088 BZX84 BZX84-A BZX84-C4V3 BZX84-C4V7 BZX84-C51 BZX84-C56 BZX84-C5V1 BZX84-C5V6 marking code B9 DG SMD smd diode B3 SOT23 SMD z6 SMD CODE PACKAGE SOT23 489 MARKING 43 SOT23 REGULATOR SMD EK 742 BZX84C3v6 MARKING CODE SMD s1 sot23 BZX84B5V1 SOT23 NXP power dissipation TO-236AB
sac 326

Abstract: 10SPR01 10SPR02 10SPR03
Text: : Maximum non-repetitive peak forward surge current. z UI oc DC 3 S-2 li g* "-« wu sac OuJ UJ Q , WEIGHT Lbs (Kgs) PER REEL PER CARTON DO-41/DT-41 0.2 (5) 2.06 (52.4) 12.82 ( 326 ) 5,000 20,000 14 x 14 x 14 (355 x 355 x 355) 22 (10.5) DO-15/DT-15 0.2 (5) 2.06 (52.4) 12.82 ( 326 ) 3,500 14,000 19 (8.5) DO-27/DT-27 0.395 (10) 2.06 (52.4) 12.82 ( 326 ) 1,250 5,000 21 (9.4) G-6A 0.395 (10) 2.06 (52.4) 12.82 ( 326 ) 600 2,400 16.5 (7.5) Fig. 1 2) Bulk Packaging 0.625" Dia. (16mm) Fig. 2 2.75" 70mm J


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PDF SESA-1001-A T03-Q T0-220 UL94V-0 MIL-STD-202E, TQ-220AC 187MAX- DB25/T DB25/W DB25P/T sac 326 10SPR01 10SPR02 10SPR03
2009 - bussmann fuse 160

Abstract: No abstract text available
Text: ( SAC ) operating from a 240 to 330 Vdc primary bus to deliver an isolated 30 ­ 41.2 V nominal , MAX 32.6 / 1.29 22.3 / 0.89 7.0 / 0.28 UNIT mm/in mm/in mm/in cm3/in3 cm2/in2 W/in3 W/cm3 oz/g , ( 3.26 ) 0.128 (15.74) 0.620 (7.87) 0.310 ( 3.26 ) 0.128 (1.38) TYP 0.054 (8.94) 0.352 (3) X (22.54 , RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power dissipation and overall , SHARING The SAC topology bases its performance on efficient transfer of energy through a transformer


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PDF VMB0004MFJ VMB0004MFT MIL-STD-704E/F VMB0004MFT bussmann fuse 160
RTM 866 480

Abstract: VIB0101THJ sac 187 217F D496 D505
Text: ChipTM Bus Converter is a high efficiency (>95%) Sine Amplitude ConverterTM ( SAC )TM operating from a 38 to 55 Vdc primary bus to deliver an isolated 12 V nominal, unregulated secondary. The SAC offers a , normally located at the input of a 12 V regulator can be located at the input to the SAC . Since the K , 250 55.1 55.5 29.1 30.7 12 57.5 58.6 30.8 32.6 18 58.6 59.8 35.4 37.3 25 V V , VIB0101THJ 3.0 POWER, VOLTAGE, EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC


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PDF VIB0101THJ VIB0101THJ RTM 866 480 sac 187 217F D496 D505
2009 - Not Available

Abstract: No abstract text available
Text: Amplitude Converter ( SAC ) operating from a 38 to 55 Vdc primary bus to deliver an isolated 12 V nominal, unregulated secondary. The SAC offers a low AC impedance beyond the bandwidth of most downstream regulators , input to the SAC . Since the K factor of the VIB0101THJ is 1/4, that capacitance value can be reduced by , 48 V, 25°C 55.1 55.5 29.1 30.7 12 15 0.8 125 57.5 58.6 30.8 32.6 18 58.6 59.8 35.4 37.3 25 , POWER, VOLTAGE, EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology


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PDF VIB0101THJ
transistor 2 SC 4242

Abstract: 36cfa sac 187 217F D496 D505 VIB0003TFJ
Text: The V·I ChipTM Bus Converter is a high efficiency (>95%) Sine Amplitude ConverterTM ( SAC )TM operating , secondary. The SAC offers a low AC impedance beyond the bandwidth of most downstream regulators, meaning , SAC . Since the K factor of the VIB0003TFJ is 1/8, that capacitance value can be reduced by a factor , [a] MAX 32.6 / 1.29 22.3 / 0.89 6.98 / 0.275 No Heatsink Weight TYP 32.5 / 1.28 22.0 , , VOLTAGE, EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power


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PDF VIB0003TFJ transistor 2 SC 4242 36cfa sac 187 217F D496 D505 VIB0003TFJ
regulator H 4242

Abstract: 36cfa BCM reflow sac 187 217F D496 D505 VIB0002TFJ sac 326 UA 324 PC
Text: The V·I ChipTM Bus Converter is a high efficiency (>95%) Sine Amplitude ConverterTM ( SAC )TM operating , . The SAC offers a low AC impedance beyond the bandwidth of most downstream regulators, meaning that input capacitance normally located at the input of a regulator can be located at the input to the SAC , Finish [a] MAX 32.6 / 1.29 22.3 / 0.89 6.98 / 0.275 No Heatsink Weight TYP 32.5 / 1.28 , , VOLTAGE, EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power


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PDF VIB0002TFJ regulator H 4242 36cfa BCM reflow sac 187 217F D496 D505 VIB0002TFJ sac 326 UA 324 PC
Not Available

Abstract: No abstract text available
Text: Chip® current multiplier is a high efficiency (>96%) Sine Amplitude Converter™ ( SAC ) operating from , 120.0 140.0 1.63 3.26 % % mΩ mΩ mΩ MHz MHz 500 mV pH µF 100 55.1 59 , ( SAC ) uses a high frequency resonant tank to move energy from input to output. (The resonant tank is , achieving power density. The VTM48EF320T009A00 SAC can be simplified into the following model: 8800 pH , shown in Figure 15. K represents the “turns ratio” of the SAC . Rearranging Eq (1): K= VOUT


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PDF VTM48 009A00
36cfa

Abstract: sac 187 217F D496 D505 VIB0010TFJ
Text: DESCRIPTION The V·I ChipTM Bus Converter is a high efficiency (>95%) Sine Amplitude ConverterTM ( SAC )TM , secondary. The SAC offers a low AC impedance beyond the bandwidth of most downstream regulators, meaning , SAC . Since the K factor of the VIB0010TFJ is 1/28, that capacitance value can be reduced by a factor , Lead Finish [a] MAX 32.6 / 1.29 22.3 / 0.89 6.98 / 0.275 No Heatsink Weight TYP 32.5 , , VOLTAGE, EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power


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PDF VIB0010TFJ VIB0010TFJ 36cfa sac 187 217F D496 D505
2013 - Not Available

Abstract: No abstract text available
Text: Chip® current multiplier is a high efficiency (>96%) Sine Amplitude Converter™ ( SAC ) operating from , 97.4 113.5 1.60 3.20 87.0 120.0 140.0 1.63 3.26 % % mΩ mΩ mΩ MHz MHz 500 mV , CONVERTERTM POINT OF LOAD CONVERSION The Sine Amplitude Converter™ ( SAC ) uses a high frequency resonant , sufficient for full functionality and is key to achieving power density. The VTM48EF320T009A00 SAC can be , VIN as shown in Figure 15. K represents the “turns ratio” of the SAC . Rearranging Eq (1): K


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PDF VTM48 009A00
2014 - Not Available

Abstract: No abstract text available
Text: Chip current multiplier is a high efficiency (>96%) Sine Amplitude Converter™ ( SAC ) operating from a , 120.0 140.0 1.63 3.26 % % mΩ mΩ mΩ MHz MHz 500 mV pH µF 100 55.1 59 , CONVERTERTM POINT OF LOAD CONVERSION The Sine Amplitude Converter ( SAC ) uses a high frequency resonant tank , sufficient for full functionality and is key to achieving power density. The VTM48EF320T009A00 SAC can be , ratio” of the SAC . Rearranging Eq (1): K= R VOUT VIN (2) R VIN Vin + – SACâ


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PDF VTM48 009A00
2013 - VTM48EF320

Abstract: VTM48ET320T009A00 VTM48EF320T009A00 VTM48ET320M009A00 VTM48EF320M009A00
Text: efficiency (>96%) Sine Amplitude ConverterTM ( SAC ) operating from a 26 to 55 Vdc primary bus to deliver an , 1.63 3.26 500 hAMB hHOT h20% ROUT_COLD ROUT_AMB ROUT_HOT FSW FSW_RP VOUT_PP LOUT_PAR COUT_INT , CONVERTERTM POINT OF LOAD CONVERSION The Sine Amplitude ConverterTM ( SAC ) uses a high frequency resonant tank , sufficient for full functionality and is key to achieving power density. The VTM48EF320T009A00 SAC can be , Chip® module AC model ­ At no load: VOUT = VIN · K K represents the "turns ratio" of the SAC


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PDF VTM48EF320 009A00 VTM48ET320T009A00 VTM48EF320T009A00 VTM48ET320M009A00 VTM48EF320M009A00
2015 - Not Available

Abstract: No abstract text available
Text: °C, IOUT = 10 A 20.4 26.5 32.6 mΩ Output resistance (hot) ROUT_HOT TC = 100°C, IOUT , 3.26 MHz Switching frequency Output ripple frequency MIL-HDBK-217 Plus Parts Count; 25 , fSW_RP 2.74 3.00 3.26 MHz Switching frequency Output ripple frequency MIL-HDBK , full functionality and is key to achieving power density. R Vin + – SAC K = 1/32 Vout A typical SAC can be simplified into the model above. At no load: Figure 2 — K = 1/32 Sine


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PDF MVTM36
Not Available

Abstract: No abstract text available
Text: secondary. The SAC offers a low AC impedance beyond the bandwidth of most downstream regulators, meaning , SAC . Since the K factor of the VIB0010TFJ is 1/28, that capacitance value can be reduced by a factor , ] UNIT mm/in mm/in mm/in cm3/in3 cm2/in2 W/in3 W/cm3 oz/g W Lead Finish [a] MAX 32.6 , , EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power dissipation and , The SAC topology bases its performance on efficient transfer of energy through a transformer, without


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PDF VIB0010TFJ VIB0010TFJ
2010 - sac 187

Abstract: 217F D496 D505 VIB0101THJ W1696
Text: to 55 Vdc primary bus to deliver an isolated 12 V nominal, unregulated secondary. The SAC offers a , normally located at the input of a 12 V regulator can be located at the input to the SAC . Since the K , 250 55.1 55.5 29.1 30.7 12 57.8 58.1 30.8 32.6 20 59.4 59.4 35.4 37.3 25 V V , , EFFICIENCY RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power dissipation and , SAC topology bases its performance on efficient transfer of energy through a transformer, without the


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PDF VIB0101THJ VIB0101THJ sac 187 217F D496 D505 W1696
Not Available

Abstract: No abstract text available
Text: V nominal, unregulated secondary. The SAC offers a low AC impedance beyond the bandwidth of most , located at the input to the SAC . Since the K factor of the VIB0002TFJ is 1/8, that capacitance value can , W/cm3 oz/g W Lead Finish [a] MAX 32.6 / 1.29 22.3 / 0.89 6.98 / 0.275 No Heatsink , resonant SAC topology, power dissipation and overall conversion efficiency of BCM converters can be , CURRENT SHARING The SAC topology bases its performance on efficient transfer of energy through a


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PDF VIB0002TFJ
Not Available

Abstract: No abstract text available
Text: €“ 45.63 V nominal, unregulated secondary. The SAC offers a low AC impedance beyond the bandwidth of most , located at the input to the SAC . Since the K factor of the VIB0003TFJ is 1/8, that capacitance value can , /in3 cm2/in2 W/in3 W/cm3 oz/g W Lead Finish [a] MAX 32.6 / 1.29 22.3 / 0.89 6.98 , RELATIONSHIPS Because of the high frequency, fully resonant SAC topology, power dissipation and overall , o w e r. c o m VIB0003TFJ PRELIMINARY DATASHEET 7.0 CURRENT SHARING The SAC topology bases


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PDF VIB0003TFJ
2013 - VTM48EH060

Abstract: No abstract text available
Text: 20.0 25.0 1.63 3.26 % % mΩ mΩ mΩ MHz MHz 550 mV pH µF 2000 55.1 58.6 , functionality and is key to achieving power density. The VTM48EH060T020A00 SAC can be simplified into the , in Figure 18. K represents the “turns ratio” of the SAC . Rearranging Eq (1): R R K= VOUT VIN (2) VIN Vin + – SAC™ SAC K = 1/32 K = 1/32 Vout VOUT In the , of the SAC , and is a function of the RDSON of the input and output MOSFETs and the winding


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PDF VTM48EH060 020A00
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