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s band Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , / S band power amplifiers QUALITY  GG Packaging  Tape & Reel (1000 pcs) RECOMMENDED , FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A Example of Circuit


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PDF MGF0805A MGF0805A, 400mA
2006 - CER0702C

Abstract:
Text: Low Band Response (S21) Pas s band Ilos s Pas s band Ripple Pas s band Return Los s @ Ant Pas s band Return Los s @ Port 3 Attenuation Low Band Response (S13) Pas s band Ilos s Pas s band Ripple Pas s band Return Los s @ Ant Pas s band Return Los s @ Port 2 Attenuation Isolation (S23) Rejection @ Low Band Rejection @ High Band Average Power Peak Power Frequency MHz Typical @ 25ºC , watts average power in 5 MHz steps across the band . 12 steps total with a 100 millisecond pulse at each


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PDF CER0702C CER0702C
Not Available

Abstract:
Text: – Excellent l/f noise CW burn out 300mW ■Low conversion loss ■S band operation , E Frequency S Band S Band S Band S Band S Band S Band S Band Forward , GE C P L E S S E Y S F M I C O N D U C T O K S DC1508/11/19 SILICON SCHOTTKY S-BAND MICROSTRIP LID MIXER DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be


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PDF DC1508/11/19 180fF DC1508 DC1511
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic , for use L/ S band amplifiers. FEATURES  High output power Po=31dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=20dBm  Plastic Mold Lead – less Package APPLICATION  For L/ S Band power , < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA
Not Available

Abstract:
Text: – Low conversion loss ■S band operation T Y P IC A L DC C H A R A C TE R S ITIC S LIM , DC1519 DC1511 E G E F G E Frequency S Band S Band S Band S Band S Band S Band S Band Forward Voltage (Vf) @ IOOjiA 350mV 350mV 350mV 350mV 350mV , 37bflS22 GGlflHbH Tifi « P L S B GEC PLE SSEY SEMICONDUCTORS DC1508/11/19 SILICON SCHOTTKY S-BAND MICROSTRIP LID MIXER DIODES DES C R IPTIO N APP LIC A TIO N S This general purpose diode


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PDF 37bflS22 DC1508/11/19 180fF 1801F
2011 - MGF0805A

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched , .) Hermetic package Designed for use in Class AB linear amplifiers APPLICATION L/ S band power amplifiers , ) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A OUTLINE DRAWING Publication Date : Apr., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - , < High-power GaAs FET (small signal gain stage) > MGF0805A L & S BAND / 4.5W SMD non - matched MGF0805A


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PDF MGF0805A MGF0805A, 400mA MGF0805A MITSUBISHI example s band
2011 - Not Available

Abstract:
Text: < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W , :Channel-case 1 < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND , -tone) f=2.14GHz f=2.17GHz < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 â , / S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W IM3 , Condition : Vds=12V,Idq=2A,Ta=25deg.C f=2.14GHz f=2.17GHz < L/ S band internally matched power GaAs


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PDF MGFS52BN2122A MGFS52BN2122A 17GHz
2011 - s band

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold , use L/ S band amplifiers. FEATURES High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin=25dBm High , =25dBm Plastic Mold Lead ­ less Package APPLICATION For L/ S Band power amplifiers QUALITY GG Fig , . Publication Date : Apr., 2011 1 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND , ., 2011 2 < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD


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PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA s band
2011 - 12W SMD

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold , use L/ S band amplifiers. FEATURES High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm High , =20dBm Plastic Mold Lead ­ less Package APPLICATION For L/ S Band power amplifiers QUALITY GG Fig , gain stage) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL , ) > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched MGF09151P TYPICAL CHARACTERISTICS


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PDF MGF0951P MGF0951P 31dBm 15GHz 20dBm 15GHz 200mA 12W SMD
cyntec filter

Abstract:
Text: TBF 2520 ­ 245 ­ S ­ XX (1) (2) (3) (4) (5) Where (1) TBF: Thin Film Band Pass Filter (2) Size , : The Engineering Spec. for TBF2520-245- S Band Pass Filter MHz dB MHz dB MHz dB 900 , SCALE X UNIT X TITLE : The Engineering Spec. for TBF2520-245- S Band Pass Filter CYNTEC CO , . for TBF2520-245- S Band Pass Filter GND (2) UNLESS OTHERWISE SPECIFIED RELEASED BY Jan. 30 , TBF2520-245- S Band Pass Filter CYNTEC CO., LTD. THIS DRAWINGS AND SPECIFICATIONS ARE THE PROPERTY OF


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PDF TBF2520-245 TBF2520-245-S, 45GHz TBF2520-245-S TBF2520-245-S CYNP-BP-253 cyntec filter cyntec TBF
2011 - mitsubishi 4a fet

Abstract:
Text: < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 GHz BAND / 160W , Publication Date : Apr., 2011 1 < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 , =25deg.C Publication Date : Apr., 2011 2 < L/ S band internally matched power GaAs FET > MGFS52BN2122A 2.1 ­ 2.2 , =2.17GHz Test Condition : Vds=12V,Idq=2A,Ta=25deg.C Publication Date : Apr., 2011 3 < L/ S band internally , Condition : Vds=12V,Idq=4A,Ta=25deg.C Publication Date : Apr., 2011 4 < L/ S band internally matched


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PDF MGFS52BN2122A MGFS52BN2122A 17GHz mitsubishi 4a fet
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic , for use L/ S band amplifiers. FEATURES  High output power Po=36.5dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=25dBm  Plastic Mold Lead – less Package APPLICATION  For L/ S Band power , ) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non - matched MGF09152P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0952P L & S BAND / 4.5W SMD / Plastic Mold non -


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PDF MGF0952P MGF0952P 15GHz 25dBm 15GHz 700mA
2008 - edfa raman amplifier

Abstract:
Text: COMMUNICATIONS COMPONENTS Fused Coupler, Single Window, Low loss C+L Band or S Band FFCK Series , ) The fused coupler, low loss, C+L band or S band enables the accurate splitting and monitoring of , : www.jdsu.com FUSED COUPLER, SINGLE WINDOW, LOW LOSS C+L BAND OR S BAND FFCK SERIES 2 Dimensions , 0.10 FUSED COUPLER, SINGLE WINDOW, LOW LOSS C+L BAND OR S BAND FFCK SERIES Specifications , Minimum Maximum Maximum S band 1425 to 1500 nm 55 dB 5N 4W -40 to 75°C -40 to 85°C Telcordia


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PDF GR-1221 498-JDSU 5378-JDSU E2000 E2000/APC SMF-28 edfa raman amplifier E2000 E2000 connector edfa amplifier JDS uniphase EDFA
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic , for use L/ S band amplifiers. FEATURES  High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin , .) @f=2.15GHz,Pin=10dBm  Plastic Mold Lead – less Package APPLICATION  For L/ S Band power , stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF09153P TYPICAL CHARACTERISTICS < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic


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PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz
CHA5082

Abstract:
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S , )1 69 33 03 09 S Band Power Amplifier CHA5082 Electrical Characteristics Tamb = +25°C , S Band Power Amplifier CHA5082 Chip Mechanical Data Dimension : Thickness : Ref , change without notice S Band Power Amplifier CHA5082 Ordering Information Chip form : CHA5082 , Specifications subject to change without notice S Band Power Amplifier CHA5082 use as critical


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PDF CHA5082 CHA5082 27dBm -20dBm) DSCHA50826354 s band
2007 - JDSU coupler

Abstract:
Text: COMMUNICATIONS COMPONENTS Fused Coupler, Low Loss, C+L or S Band Key Features · Ultra low , , low loss, C+L or S band enables the accurate splitting and monitoring of optical signals in , Loss (dB) Tap Insertion Loss (dB) Tap Insertion Loss FUSED COUPLER, LOW LOSS, C+L OR S BAND , ). FUSED COUPLER, LOW LOSS, C+L OR S BAND 4 Housing Option Housing Code 1 2 3 4 5 6 , nm Minimum Maximum Maximum 55 dB 5N 4W -40 to 75 °C -40 to 85 °C Telcordia GR-1221 S band 1425 to


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PDF SMF-28 498-JDSU 5378-JDSU JDSU coupler
2011 - RG1000

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold , use L/ S band amplifiers. FEATURES High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm High , =10dBm Plastic Mold Lead ­ less Package APPLICATION For L/ S Band power amplifiers QUALITY GG Fig , signal gain stage) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF09153P TYPICAL , ) > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched MGF0953P S PARAMETERS (Ta=25C,VD=10V,ID


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PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz RG1000
Not Available

Abstract:
Text: good temperature stability CW burn out 250mW ■Very high pulse burn out ■S band , S Band S Band S Band Forward Voltage (Vf) @ lOOgA 350mV 350mV 350mV Reverse , 37bñS52 ODiaHb^ 5TT « P L S B GEC P LE S S E Y SEMICONDUCTORS DC1509/13/17 SILICON SCHOTTKY S-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These


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PDF DC1509/13/17 250mW DC1509 DC1513 DC1517 350mV
Not Available

Abstract:
Text: ■Very high pulse burn out ■S band operation TYPICAL DC CHARACTERSITICS Tamb 25'C TYPE NUMBER DC1509 DCT513 DC1517 Frequency S Band S Band S Band Forward Voltage , P^pjl GE C P L E S S E Y DC1509/13/17 SILICON SCHOTTKY S-BAND MICROSTRIP LID DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance mixers. These diodes can be supplied in matched pairs by the


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PDF DC1509/13/17 250mW DC1509 DCT513 DC1517 100pA 350mV
04 monolithic amplifier

Abstract:
Text: CHA5082 S Band Power Amplifier GaAs Monolithic Microwave IC Description The CHA5082 is a S , S Band Power Amplifier CHA5082 Electrical Characteristics Tamb = +25°C Symbol Fop Test , 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice S Band Power , notice S Band Power Amplifier CHA5082 Ordering Information Chip form : CHA5082-99F/00 , change without notice S Band Power Amplifier CHA5082 use as critical components in life support


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PDF CHA5082 CHA5082 27dBm -20dBm) DSCHA50826354 04 monolithic amplifier
2011 - Not Available

Abstract:
Text: < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W , C/W delta Vf method *2 :Channel-case 1 < L/ S band internally matched power GaAs FET , =5MHz < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W MGFL45V1920 RF TEST FIXTURE < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 – 2.0 GHz BAND / 60W MGFL48V1920 S-parameters( Ta=25deg.C , VDS=12(V),IDS=1.5(A) ) < L/ S band internally


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PDF MGFL48V1920 MGFL48V1920 20ohm
MGF0953P

Abstract:
Text: MITSUBISHI SEMICONDUCTOR MGF0953P L & S BAND GaAs FET [Plastic Mold Lead-less PKG] DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky gate, is designed for use L & S band amplifiers , =10dBm ■Plastic Mold Lead-less PKG APPLICATION ■For L & S band amplifiers QUALITY GRADE ■GG Fig , 14 20 deg.C/W MITSUBISHI ELECTRIC (1/4) Ver. 1-2 May.2005 MGF0953P L & S BAND GaAs FET [Plastic , (dBm) MITSUBISHI ELECTRIC (2/4) Ver. 1-2 May.2005 MGF0953P L & S BAND GaAs FET [Plastic Mold


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PDF MGF0953P MGF0953P 15GHz 10dBm 15GHz 25deg
2011 - s band

Abstract:
Text: < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W , resistance *2 :Channel-case Publication Date : Apr., 2011 1 < L/ S band internally matched power , =25deg.C 2-tone test , f=5MHz Publication Date : Apr., 2011 2 < L/ S band internally matched power GaAs , : Apr., 2011 3 < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND , 4 < L/ S band internally matched power GaAs FET > MGFL48V1920 1.9 ­ 2.0 GHz BAND / 60W


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PDF MGFL48V1920 MGFL48V1920 20ohm s band
2009 - smd z13

Abstract:
Text: MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched , Class AB linear amplifiers APPLICATIONS • L/ S band power amplifiers QUALITY • GG , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] Outline Drawing , MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET [ SMD non-matched ] S-parameters , Mitsubishi Electric Sept. / 2009 MITSUBISHI SEMICONDUCTOR MGF0805A L & S Band GaAs FET


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PDF MGF0805A MGF0805A, smd z13 of bt 1696 Z12 SMD
2011 - Not Available

Abstract:
Text: < High-power GaAs FET (small signal gain stage) > MGF0912A L & S BAND / 14W non - matched DESCRIPTION The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/ S band , .) @f=1.9GHz,Pin=33dBm Hermetic Package 2MIN 2.2 0.6±0.2 APPLICATION For L/ S Band power , & S BAND / 14W non - matched MGF0912TYPICAL CHARACTERISTICS( Ta=25deg.C ) MGF0912A , (small signal gain stage) > MGF0912A L & S BAND / 14W non - matched Keep safety first in your


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PDF MGF0912A MGF0912A, 33dBm
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