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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

rf transistor mark code H1 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - MARKING W3 SOT23 TRANSISTOR

Abstract: rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 Mark : 3D B PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz with collector , CURRENT (mA) MPSH81 / MMBTH81 PNP RF Transistor (continued) Typical Characteristics , >> Find products >> PNP RF Transistor Contents ·General description ·Product status/pricing/packaging ·Order Samples ·Qualification Support General description PNP RF Transistor This device is designed for


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PDF MPSH81 MMBTH81 MPSH81 OT-23 MARKING W3 SOT23 TRANSISTOR rf transistor mark code H1 transistor marking code ne SOT-23 marking code w2 sot23 pnp rf transistor sot23 Transistor marking p2 sot-23 Marking 3D marking 3d sot-23 Marking code mps
1997 - PN5179

Abstract: CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark : 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector , MPS5179 / MMBT5179 / PN5179 NPN RF Transistor pF SMALL SIGNAL CHARACTERISTICS fT Current Gain , TEMPERATURE (o C) 125 150 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Test , wire, 3/16 inch OD, 1/2 inch long 1000 pF MPS5179 / MMBT5179 / PN5179 NPN RF Transistor RFC


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PDF PN5179 MMBT5179 OT-23 PN5179 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N TRANSISTOR C 3223 MJC2
1998 - Transistor J310

Abstract: J309 J310 applications J310 J310 Application Note PN2222N MMBFJ310 MMBFJ309 F63TNR J310 transistor
Text: MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark : 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications , N-Channel RF Amplifier (continued) Typical Characteristics Transfer Characteristics Transfer , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical Characteristics


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PDF MMBFJ309 MMBFJ310 OT-23 Transistor J310 J309 J310 applications J310 J310 Application Note PN2222N MMBFJ310 MMBFJ309 F63TNR J310 transistor
1997 - transistor j210

Abstract: 212 t sot-23
Text: G S G S TO-92 D SOT-23 Mark : 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications , /MMBFJ210/J211/J212, Rev A J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical Characteristics , J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier (continued) Typical


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PDF MMBFJ210 MMBFJ211 MMBFJ212 OT-23 transistor j210 212 t sot-23
1997 - 6u sot-23

Abstract: J309 UA309 J309-J310 PN2222N MMBFJ310 MMBFJ309 J310 F63TNR CBVK741B019
Text: -92 SOT-23 D D Mark : 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF , J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier SMALL SIGNAL CHARACTERISTICS Re(yis , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , Admittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Capacitance vs. Voltage 5 , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier TO-92 Tape and Reel Data TO-92 Packaging


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PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 J309 UA309 J309-J310 PN2222N MMBFJ310 J310 F63TNR CBVK741B019
1997 - 6u sot-23

Abstract: j310 equivalent UA309 MMBFJ309 J310 J309 F63TNR CBVK741B019 rf transistor mark code H1 J309 application note
Text: -92 SOT-23 D D Mark : 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF , J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier SMALL SIGNAL CHARACTERISTICS Re(yis , Transadmittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical , Admittance J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Capacitance vs. Voltage 5 , / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier TO-92 Tape and Reel Data TO-92 Packaging


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PDF MMBFJ309 MMBFJ310 MMBFJ309 OT-23 6u sot-23 j310 equivalent UA309 J310 J309 F63TNR CBVK741B019 rf transistor mark code H1 J309 application note
1997 - 212 s sot-23

Abstract: 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 transistor mark igf MMBFJ211 MMBFJ212 PN2222N
Text: -92 SOT-23 D Mark : 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel RF , RF Amplifier (continued) Typical Characteristics (continued) Transfer Characteristics , RF Amplifier Noise Voltage vs. Frequency 5 Transconductance vs. Drain Current Output , Transadmittance Reverse Transadmittance J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier , J211 / J212 / MMBFJ211 / MMBFJ212 N-Channel RF Amplifier Reverse Transadmittance 5 TO


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PDF MMBFJ211 MMBFJ212 MMBFJ211 OT-23 212 s sot-23 62w sot-23 rf transistor mark code H1 212 t sot-23 J212 J211 transistor mark igf MMBFJ212 PN2222N
1997 - CBVK741B019

Abstract: F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark : 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , = 0 4.0 ICBO Collector Cutoff Current VCB = 15 V, IE = 0 MPSH24 / MMBTH24 NPN RF Transistor V 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 8.0 mA, VCE = 10 V 30 , 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z FSCINT Label


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PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N
1997 - rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark : 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , = 0 4.0 ICBO Collector Cutoff Current VCB = 15 V, IE = 0 MPSH24 / MMBTH24 NPN RF Transistor V 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 8.0 mA, VCE = 10 V 30 , 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z FSCINT Label


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PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N
1997 - rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 D3000
Text: RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 , MPSH11 / MMBTH11 NPN RF Transistor (continued) 1000 b oe goe 100 10 V CE = 15V f , / MMBTH11 NPN RF Transistor 26 24 f IF = 45 MHz f O = 200 MHz f LO = 245 MHz V CE = 15V FIG. 1


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PDF MPSH11 MMBTH11 MPSH11 OT-23 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 D3000
1997 - CBVK741B019

Abstract: F63TNR MMBTH11 MPSH11 PN2222N Q100 Z-235 transistor 26
Text: RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications , , IC = 0 100 MPSH11 / MMBTH11 NPN RF Transistor nA ON CHARACTERISTICS hFE DC Current , Admittance vs Collector Voltage 8 MPSH11 / MMBTH11 NPN RF Transistor 3 g ie 8 b ie 4 0 , MPSH11 / MMBTH11 NPN RF Transistor (continued) 1000 b oe goe 100 10 V CE = 15V f , / MMBTH11 NPN RF Transistor 26 24 f IF = 45 MHz f O = 200 MHz f LO = 245 MHz V CE = 15V FIG. 1


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PDF MPSH11 MMBTH11 MPSH11 OT-23 CBVK741B019 F63TNR MMBTH11 PN2222N Q100 Z-235 transistor 26
1997 - Not Available

Abstract: No abstract text available
Text: RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , , f = 500 MHz 15 dB 30 mW 25 % PN918 / MMBT918 NPN RF Transistor (continued , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 125 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters , / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE


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PDF PN918 MMBT918 PN918 OT-23
1997 - CBVK741B019

Abstract: F63TNR MMBT918 PN2222N PN918 RF 107 transistor tc 144
Text: RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs , NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE TRANS


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PDF PN918 MMBT918 PN918 OT-23 CBVK741B019 F63TNR MMBT918 PN2222N RF 107 transistor tc 144
1997 - mmbt918

Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
Text: RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with , / MMBT918 NPN RF Transistor (continued) VCE = 5V 90 80 125 °C 70 60 25 °C 50 - , PN918 / MMBT918 NPN RF Transistor (continued) (continued) Contours of Constant Gain , 150 10 PN918 / MMBT918 NPN RF Transistor (continued) Common Emitter Y Parameters vs , NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Yre - REVERSE TRANS


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PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
erf5e

Abstract: ERF10E ERF2E
Text: date code E Mark 2W 0.1 K s Pakaging Methods Contact factory pakaging methods Cautions for , applications such as protection of output transistor in AV equipment and current detection of switching power , ) L W ERF2E 14.0 ±1.0 Cement Terminal 4.0 ±0.5 H 8.0 ±1.0 H1 7.0 , environment such as RF circuit may cause abnormal phenomena due to oscillation or inductance. Check and


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1997 - CBVK741B019

Abstract: Z-235 Ohmite RF transistor mark code t1 Q100 PN2222N MPSH20 MMBTH20 F63TNR MPS-H20
Text: RF Transistor This device is designed for general RF amplifier and mixer applications to 250 MHz , Collector Cutoff Current VCB = 15 V, IE = 0 MPSH20 / MMBTH20 NPN RF Transistor V 50 nA ON , MPSH20 / MMBTH20 NPN RF Transistor (continued) Common Emitter Y Parameters Input Admittance vs , Admittance vs Collector Current MPSH20 / MMBTH20 NPN RF Transistor 8 b ie 0 10 50 100 f , ) 400 MPSH20 / MMBTH20 NPN RF Transistor (continued) Test Circuits T1 50 Output


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PDF MPSH20 MMBTH20 MPSH20 OT-23 CBVK741B019 Z-235 Ohmite RF transistor mark code t1 Q100 PN2222N MMBTH20 F63TNR MPS-H20
1997 - CBVK741B019

Abstract: F63TNR MMBTH10 MPSH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
Text: RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , MPSH10 / MMBTH10 NPN RF Transistor 8 VCE = 10V 6 I C = 5 mA 3 4 -b rb 2 -g rb , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10


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PDF MPSH10 MMBTH10 MPSH10 OT-23 CBVK741B019 F63TNR MMBTH10 PN2222N PAP transistor power high frequency transistor bel 100 rf transistor mark code H1
1997 - Not Available

Abstract: No abstract text available
Text: PN918 / MMBT918 PN918 MMBT918 C E C B TO-92 E SOT-23 Mark : 3B B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector , on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation NPN RF Transistor , / MMBT918 NPN RF Transistor (continued) Typical Characteristics (continued) f T - GAIN , RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance vs


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PDF PN918 MMBT918 PN918 OT-23
1997 - MPSH10 s parameters

Abstract: No abstract text available
Text: RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , , IC = 0 100 MPSH10 / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , / MMBTH10 NPN RF Transistor 8 6 b ob 4 g ob 2 0 100 200 500 f - FREQUENCY (MHz , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 KΩ â


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PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 s parameters
1997 - MPSH10 fairchild transistor

Abstract: MPSH10 transistor top mark 3E L MMBTH10 Spice Model transistor bel 100 MMBTH10 F63TNR TRANSISTOR C 3223 MPSH10 s parameters transistor mark code RB
Text: RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector , / MMBTH10 NPN RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = 4.0 mA, VCE , ) 125 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs , MPSH10 / MMBTH10 NPN RF Transistor 8 VCE = 10V 6 I C = 5 mA 3 4 -b rb 2 -g rb , (MHz) 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10


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PDF MPSH10 MMBTH10 MPSH10 OT-23 MPSH10 fairchild transistor transistor top mark 3E L MMBTH10 Spice Model transistor bel 100 MMBTH10 F63TNR TRANSISTOR C 3223 MPSH10 s parameters transistor mark code RB
1997 - Not Available

Abstract: No abstract text available
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark : 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector , 2000 MHz 1.0 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor pF SMALL SIGNAL , C) 125 150 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Test Circuit , . 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF MPS5179 / MMBT5179 / PN5179 NPN RF


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PDF PN5179 MMBT5179 OT-23
1997 - CBVK741B019

Abstract: F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
Text: PN5179 MMBT5179 C E C B TO-92 SOT-23 E C B E Mark : 3C TO-92 B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector , MPS5179 / MMBT5179 / PN5179 NPN RF Transistor pF SMALL SIGNAL CHARACTERISTICS fT Current Gain , TEMPERATURE (o C) 125 150 MPS5179 / MMBT5179 / PN5179 NPN RF Transistor (continued) Test , wire, 3/16 inch OD, 1/2 inch long 1000 pF MPS5179 / MMBT5179 / PN5179 NPN RF Transistor RFC


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PDF PN5179 MMBT5179 OT-23 CBVK741B019 F63TNR MMBT5179 MPS5179 PN2222N PN5179 TRANSISTOR C 3223
1997 - Not Available

Abstract: No abstract text available
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark : 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , MPSH81 / MMBTH81 PNP RF Transistor nA V ON CHARACTERISTICS hFE DC Current Gain IC = , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO , ,000 See Fig 3.0 for 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z


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PDF MPSH81 MMBTH81 MPSH81 OT-23
1997 - mpsh81 model

Abstract: MMBTH81 CBVK741B019 F63TNR MPSH81 PN2222N NE-21 BF-133
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark : 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 MPSH81 / MMBTH81 PNP RF Transistor nA ON , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO , ,000 See Fig 3.0 for 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z


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PDF MPSH81 MMBTH81 MPSH81 OT-23 mpsh81 model MMBTH81 CBVK741B019 F63TNR PN2222N NE-21 BF-133
1997 - nk90

Abstract: BF-133 mje321 Bf133 pnp rf transistor PN2222N MPSH81 MMBTH81 F63TNR CBVK741B019
Text: MPSH81 / MMBTH81 MPSH81 MMBTH81 C E C E TO-92 B SOT-23 B Mark : 3D PNP RF Transistor This device is designed for general RF amplifier and mixer applications to 250 mHz , Emitter Cutoff Current VEB = 2.0 V, IC = 0 100 MPSH81 / MMBTH81 PNP RF Transistor nA ON , TEMPERATURE ( ° C) 125 150 MPSH81 / MMBTH81 PNP RF Transistor TO-92 Tape and Reel Data TO , ,000 See Fig 3.0 for 2 Ammo Pack Options D26Z Ammo AMMO PACK OPTION EOL code D75Z


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PDF MPSH81 MMBTH81 MPSH81 OT-23 nk90 BF-133 mje321 Bf133 pnp rf transistor PN2222N MMBTH81 F63TNR CBVK741B019
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