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Part Manufacturer Description Datasheet Download Buy Part
LT3742EUF#PBF Linear Technology LT3742 - Dual, 2-Phase Step-Down Switching Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LT3742EUF#TRPBF Linear Technology LT3742 - Dual, 2-Phase Step-Down Switching Controller; Package: QFN; Pins: 24; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

rf transistor 3742 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - Not Available

Abstract: No abstract text available
Text: Frequency Range 2.4-5.5 3.7-4.2 DC-1.3 CL SSB Conversion Loss > f RF 3.7-4.2 DC-1.3 +7-+10 5.0 6.0 dB < f RF 3.7-4.2 DC-1.3 +7-+10 4.5 6.0 max — Conversion Loss Flatness over any 40 MHz segment of f RF 3.7 to 4.2 GHz peak-to-peak 2.3-5.5 3.7-4.2 DC-1.3 +7-+10 0.1 — dB typ NF SSB Noise Figure > f RF 3.7-4.2 0.03-1.3 +6-+8 5.0 6.0 dB < f RF 3.7-4.2 0.03-1.3 +6-+8 4.5 6.0 max 2.4-5.5 â


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PDF UMX-4220 5963-3241E
Not Available

Abstract: No abstract text available
Text: high-side LO for either an 880 or 1125 MHz IF frequency. LO to RF isolation exceeds 30 dB. • 4.5 dB , Input Current @ 25°C Pin Temperature Operating Case Temperature Storage Temperature Continuous RF , MHz Power Level Specifications RF Port Typical dBm Tc = 2 5 C Tc = -5 5 ° to +10#°C Symbol Characteristic f LO BW Operating Frequency Range 24-5.5 3.74.2 DC-1.3 CL SSB Conversion Loss > fRF 3.7 4.2 DC-1.3 +7-+10 5.0 6.0 dB < fRF 3.7-4.2


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PDF UMX-4220
UMX-4220

Abstract: 5053F
Text: 5.0 with a high-side LO for either an 880 or 1125 MHz IF frequency. LO to RF isolation exceeds 30 dB , Level LO Port dBm (typ) Model Suffix RF Port dBm Typical Tc = 25°C Specification« Guaranteed Tcs , 2.3-5Z5 fR , f.F Unit GHz 3.T-4.2 3.T-4.2 3.7-4.2 3.7- 4.2 DC-1.3 DC-1.3 DC-1.3 DC , Porl-to-Port L -R R -L R-1 L -l - 3 7 -4 .2 3.7-4.2 _ 0.03-1.3 0.03-1.3 - - - +r-+a + 6 -t8 , 3.7-4.2 3.7-4.2 3.7-4.2 - 3.7-4.2 2.4-5.5 2.4- 5.5 - - 2.3-5.S - - - 20 - -


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PDF UMX-4220 5053F
RF300-12

Abstract: dpdt relays RF103-5 RF323-12 732TN-5 RF3235 RF303-5 732-5 RELAYS
Text: T e l e d y n e Relays RF ® , General Purpose Centigrid and TO-5 Relays RF170 Series High , 45.27 4 RF100 and RF 103 Series High Repeatability Centigrid ® Relays The RF100 and RF103 series are DPDT relays designed to provide RF signal repeatability over the frequency range by balancing the , RF signal repeatability over the frequency range by balancing the aggregate insertion loss of the , circumvent an electrical load. Designed primarily for use in RF circuitry, the bypass relays and insertion


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PDF RF170 RF170-5 RF170-6 RF170-12 RF170-26 RF100 RF103 712TN-5 RF300-12 dpdt relays RF103-5 RF323-12 732TN-5 RF3235 RF303-5 732-5 RELAYS
Anzac mdc 185

Abstract: MD185 MDC-185 MD-185 mdc 185 anzac mdc-167
Text: -5 5 °C to +85°C) Frequency Range RF Port LO Port IF Port LO to RF LO to IF RF to IF 3.7-4.2 GHz 3.0-5.5 GHz DC-1300 MHz 6.5 dB Max (3.0-5.5 GHz) 20 dB Min (3.0-5.5 GHz) 18 dB Min ( 3.7-4.2 GHz) 20 dB Min , ·1 MODELS MD-/MDC-185 DOUBLE-BALANCED MIXER 3.7-4.2 GHz 5.0 dB Typical Midband Conversion , °C Derated 3.2 mW/°C RF Input 1 dB Compression + 2.0 dBm Typical 1 dB Desensitization 0 dBm Typical , requirements of Table 1A, page 496 of the Adams-Russell catalog. Pin Configuration RF ; P3, LO; P1, IF; P2


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PDF MD-/MDC-185 DC-1300 DC-500 MD-185 MDC-185 Anzac mdc 185 MD185 MDC-185 mdc 185 anzac mdc-167
Not Available

Abstract: No abstract text available
Text: /O Typ. 3.7-4.2 3.7-4.2 35 35 6.0 6.0 37 39 Gain Flatness (+/-dB) Max. 1.0 , 3.0-3.5 28 30 30 30 DBS-4237N312 DBS-4237N420 DBS-4237N427 DBS-4237N530 3.7-4.2 3.7-4.2 3.7-4.2 3.7-4.2 DBS Model Number DBH-4237N637 DBH-4237N639 Min. IP3 (dBm) DBX- Notes , to +15.5Vdc. 2. Maximum RF input power is 20dBm (CW) or 30dBm pulse, lmicro second and l-% duty


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PDF 12Vdc DBS-3530N312 DBS-3530N420 DBS-3530N427 DBS-3530N530 DBS-4237N312 DBS-4237N420 DBS-4237N427 DBS-4237N530 DBH-4237N637
Not Available

Abstract: No abstract text available
Text: -1.3 > +7-4-10 +7-+10 S.0 4.5 2.3-S/6 3.7-42 DC-1.3 +7— 0 hi 0.1 > fff <*«• 3.7â , €” 2.4-5.S — 3.7— 4.2 3J-4.2 —- -, — — L R 1 2.4-S.5 — — — 3.7-4.2 , MHz segment of I rf 3.7 to 4,8 GHz peak-to-peak — Specification« RFPort dBm f«F , 3.7-4.2 max — — - _ _ dBm _ - +1 dBm • typ ‘ Third-Order , €™ Conversion Loss § Conversion Loss Conversion Loss f LCf^f RF fl.Cp’f RF ÎLO RF S


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PDF
Not Available

Abstract: No abstract text available
Text: -Capacitor 1-Dielectric Puck IF 1.45-.95GHz RF 3.7-4.2 GHz Actual Size PC Board Including Output , Conversion with up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise , Specifications: Ta = 25° C, Id = 35 mA, Z0 = 50 ohms, -20 dBm RF Input at 4.2 GHz and LO at 5.15 GHz Parameter , . 500 mW RF Input Power . 20 dBm Junction , ) CONVERSION GAIN versus RF FREQUENCY W ITH LO AT 5.15 GHz CONVERSION GAIN AND IF O UTPUT P1dB versus RF


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PDF MSF-8870 95GHz S-1514/10-86
Avantek mixer

Abstract: police radar detector MSF-8885 police radar detector detector normal radar circuit s band doppler mixer diagram radar circuit police radar detector receiver radar block diagram RF LNA 10 GHz
Text: up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO , can be achieved using simple external filters. RF OUTPUT AND BIAS .020 .51 TYP o 1 .460 11.66 , = 35 mA, Z0 = 50 ohms, -20 dBm RF Input at 4.2 GHz and LO at 5.15 GHz Symbol Parameter Freq. (GHz , . 65 mA Power Dissipation . 500 mW RF Input Power , = 35 mA DEVICE CURRENT versus DEVICE VOLTAGE RF


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PDF MSF-8885 ADS-1515/10-86 Avantek mixer police radar detector MSF-8885 police radar detector detector normal radar circuit s band doppler mixer diagram radar circuit police radar detector receiver radar block diagram RF LNA 10 GHz
Avantek mixer sx

Abstract: RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer radar system with circuit diagram radar block diagram police radar detector detector police radar detector TVRO
Text: Pass RF 3.7-4.2 GHz 5.15 GHz DIELECTRIC RESONATOR CONVERSION GAIN = 7.5 ± .5 dB from 3.7-4.2 GHz , up to 20 dB Conversion Gain • RF Input From 0.5 to 10 GHz • Low Phase Noise Self-Oscillating LO , RF Input at 4.2 GHz and LO at 5.15 GHz Symbol Parameter Freq. (GHz) Units Min. Typ. Max. GC , Dissipation . 500 mW RF Input Power . 20 dBm Junction , versus DEVICE VOLTAGE « E. 20 7 Vd (V) CONVERSION GAIN versus RF FREQUENCY WITH LO AT 5.15 GHz


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PDF ADS-1514/10-86 Avantek mixer sx RF LNA 10 GHz Ground Radar diagram AVANTEK sx s band doppler mixer radar system with circuit diagram radar block diagram police radar detector detector police radar detector TVRO
Not Available

Abstract: No abstract text available
Text: BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in , 28 V . The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch , IC K R E FER EN C E D A T A R.F . performance up to T m b = 25 °C in an unneutralized common-emitter , ~~33~°7 BLY91A V .H .F . power transistor J V C H A R A C T E R IS T IC S Tj = 25 °C , V .H .F . power transistor HI inbSBc ]31 o o m ia o ' d 'T '3 3 -6 ? BLY91A 15 R E


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PDF bb53T31 BLY91A
AMMC-6345

Abstract: AMMC-6440
Text: Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6440 AMMC-6440 37-42 GHz 1W Power Amplifier Description AMMC-6440 is a broadband 1W power amplifier designed for , Features Wide Frequency Range: 37-42 GHz High Gain: 14 dB Power: @42 GHz, P-1dB=28 dBm High linear: OIP3=39 dBm Integrated RF Power Detector 5.5v, -0.7v, 950 mA operation Applications Microwave , compensated RF power detection circuit that enables power detection of 0.25V/W. DC bias is simple and the


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PDF AMMC-6440 AMMC-6440 AMMC-6440-W10 AMMC-6440-W50 AMMC-6345
Avantek mixer

Abstract: MSF-8835 Avantek mixers Avantek mixer 18 ghz active MSF-8870 AVANTEK filter 183 8835 753b Avantek rf mixers MSF-8885
Text: = 7.5 + .5 dB FROM 3.7-4.2 GHz WITH SELF-OSCILLATING LO AT 5.15 GHz RF 3.7-4.2 GHz Band Pasa , Frequency Conversion with up to 20 dB Conversion Gain • RF Input from 0.5 to 8.0 GHz • Low Phase Noise , Self-Oscillating Mixer Electrical Specifications, Ta = 25°C, ld = 36 mA,1 Z0 = 50 Q. -20 dBm RF Input at 4.2 GHz , . RF FREQUENCY LO = 5.15 GHz, l|f = 36 mA / V y V V LO a 4 ■o m -D 2 ACTIVE MIXER: CONVERSION GAIN and OUTPUT POWER ® 1 dB GAIN COMPRESSION vs. CURRENT RF s 4.2 GHz, LO s 5.15 GHz


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PDF MSF-88 Avantek mixer MSF-8835 Avantek mixers Avantek mixer 18 ghz active MSF-8870 AVANTEK filter 183 8835 753b Avantek rf mixers MSF-8885
2004 - FHX35LP

Abstract: FHX35LG WG 924 FHX35
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor (HEMT) intended for general purpose, low noise , STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 3201 10001 , 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9


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PDF FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35
1998 - low noise hemt

Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor (HEMT) intended for general purpose, low noise , STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 3201 10001 , .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742


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PDF FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt
2000 - low noise hemt

Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
Text: FHX35LG is a High Electron Mobility Transistor (HEMT) intended for general purpose, low noise and high gain , Voltage Noise Figure Associated Gain Thermal Resistance AVAILABLE CASE STYLES: LG Note: RF parameters are , , IDS = 10mA S21 S12 MAG ANG MAG ANG 4.576 4.548 4.471 4.304 4.026 3.742 3.436 3.132 2.881 2.659 2.497


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PDF FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742
2004 - Not Available

Abstract: No abstract text available
Text: DESCRIPTION The FHX35LG is a High Electron Mobility Transistor (HEMT) intended for general purpose, low noise , AVAILABLE CASE STYLES: LG Note: RF parameters are measured on a sample basis as follows: 1200 1201 , 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8


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PDF FHX35LG 12GHz FHX35LG 2-18GHz the88
2004 - Not Available

Abstract: No abstract text available
Text: Configuration Port LO RF IF Gnd Ext. Case Gnd Not Used x 2 1 3 4,5,6 - · General Quality Control · Prices and Specifications Outline Drawing Electrical Specifications SYM-EDR5092/2 Frequency MHz LO/ RF , range(10fL to fU/2) U=upper range(fU/2 to fU) Typical Performance Data SYM-EDR5092/2 RF MHz LO MHz , 1400.100 35.19 34.38 32.98 37.44 36.26 33.91 1420.100 35.32 34.53 33.07 37.42 36.46 33.97 1440.100 35.38 34.69 33.15 37.42 36.66 34.01 1460.100 35.32 34.65 33.32 37.33 36.64 34.26 1480.100 35.25 34.75 33.45


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PDF SYM-EDR5092/2
2004 - 25656

Abstract: No abstract text available
Text: notice. SYM-EDR5092/2 LO Power Level 17 dBm Pin Configuration Port LO RF IF Gnd Ext. Case Gnd Not , Frequency MHz LO/ RF IF LO Power Level 17 dBm Min. LO-RF Min. LO-IF Isolation dB Isolation dB M U L M U , SYM-EDR5092/2 RF MHz LO MHz Conversion Loss (dB) LO LO LO +14 +17 +20 dBm dBm dBm ISO LO (MHz) Isolation L-R , 34.53 33.07 37.42 36.46 33.97 1440.100 35.38 34.69 33.15 37.42 36.66 34.01 1460.100 35.32 34.65 33.32 , 6.45 1875.100 1704.500 7.92 7.12 6.58 1900.100 1729.500 8.00 7.18 6.63 RF /LO FREQ. (MHz) VSWR RF port


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PDF SYM-EDR5092/2 25656
2008 - Not Available

Abstract: No abstract text available
Text: for use in 50 environments. The AMMC-6425 also integrates a temperature compensated RF power , : 20 dB · Power: @27 GHz, P-1dB = 30 dBm · Highly linear: OIP3 = 35dBm · Integrated RF power detector · , (under any RF power drive and temperature) (Vd=5.0 V, Vg set for Id Typical) Gate Supply Operating , operational temperature TA=25°C unless otherwise noted. 2. Assume SnPb soldering to an evaluation RF board at , to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in


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PDF AMMC-6425 18GHz 28GHz. 38dBm. 27GHz 30dBm AMMC-6425-W10
Not Available

Abstract: No abstract text available
Text: aram eter Continuous RF Power Operating Case Tem perature Storage Tem perature Maximum +30 dBm -5,5 to , -0.53 -0.61 -0.74 -1.08 -1.05 -4.81 -13.57 -20.88 -26.62 -31.73 -35.44 -37.72 - 37.42 -38.74 -38.41 , -0.54 -0.61 -0.75 -1.10 -1.05 -4.86 -13.59 -20.83 -26.61 -31.73 -35.44 -37.72 - 37.42 -38.41 -38.41


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PDF PLP-407 PLP-407 PP-38F
2006 - DC TO 18GHZ RF AMPLIFIER MMIC

Abstract: gold metal detectors AMMC-6345 AMMC-6425 vg 9612
Text: compensated RF power detection circuit that enables power detection of 0.3V/W. DC bias is simple and the , High gain: 20 dB · Power: @27 GHz, P-1dB=30 dBm · Highly linear: OIP3=38dBm · Integrated RF power , RF power drive and temperature) (Vd=5.0 V, Vg set for Id Typical) mA Vg Gate Supply , temperature (Tb) = 25°C calculated from measured data. AMMC-6425 RF Specifications [3, 4, 5] (TA= 25°C, Vd , measured in wafer form TA = 25°C. 4. 100% on-wafer RF test is done at frequency = 18, 23, and 28 GHz


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PDF AMMC-6425 18GHz 28GHz. 38dBm. 27GHz 30dBm AMMC-6425-W10 AMMC-6425-W50 DC TO 18GHZ RF AMPLIFIER MMIC gold metal detectors AMMC-6345 vg 9612
2008 - SYK-2-33

Abstract: No abstract text available
Text: X2 SYK-2-33+ Maximum Ratings Operating Temperature Storage Temperature RF Input Power · , 964.00 1032.00 1168.00 1236.00 1372.00 1450.00 1500.00 INPUT RF = 11dBm Conversion Harmonic Output Loss , 11.93 11.90 11.77 11.52 11.60 11.82 INPUT RF = 15dBm Harmonic Output Below F2 (-dBc) F1 F3 54.14 , 36.67 41.55 31.84 37.42 33.34 33.62 31.63 31.29 31.85 30.89 29.30 29.49 29.46 29.60 F4 18.51 21.30 , -2-33+ HARMONIC OUTPUT F1 70 INPUT RF =11 dBm 60 50 40 30 20 INPUT RF =15 dBm 14 13 12 11 10 0 500 INPUT RF


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PDF SYK-2-33+ TTT167 2002/95/EC) M117534 ED-13376/1 SYK-2-33
2004 - Not Available

Abstract: No abstract text available
Text: RF power detector · 5.0 Volt, -0.6 Volt, 900mA operation Applications · Microwave Radio systems · , compensated RF power detection circuit that enables power detection of 0.3V/W. DC bias is simple and the , Properties [1] Symbol Id Parameters and Test Conditions Drain Supply Current (under any RF power drive , °C calculated from measured data. AMMC-6425 RF Specifications [3, 4, 5] (TA= 25°C, Vd=5V, Id(Q)=900 mA, Zo , . 100% on-wafer RF test is done at frequency = 18, 23, and 28 GHz. Statistics based on 1500 part sample


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PDF AMMC-6425 18GHz 28GHz. 38dBm. 27GHz 30dBm AMMC-6425-W10 AMMC-6425-W50
2004 - AMMC-6345

Abstract: AMMC-6425 247E03
Text: Integrated RF power detector AMMC-6425 also integrates a temperature compensated RF power detection , Current (under any RF power drive and temperature) (Vd=5.0 V, Vg set for Id Typical) mA Vg Gate , backside temperature (Tb) = 25°C calculated from measured data. AMMC-6425 RF Specifications [3, 4, 5 , . Small/Large -signal data measured in wafer form TA = 25°C. 4. 100% on-wafer RF test is done at , 11 -5.67 0.52 130.97 - 37.42 0.01 23.99 -52.14 2.47E-03 143.34 -6.13


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PDF AMMC-6425 AMMC-6425 18GHz 28GHz. 38dBm. 27GHz 30dBm 5989-1705EN AMMC-6345 247E03
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