The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
CC2544EM-RD CC2544EM-RD ECAD Model Texas Instruments CC2544EM Reference Design
CC2543EM-RD CC2543EM-RD ECAD Model Texas Instruments CC2543EM Reference Design
ADS1202REF ADS1202REF ECAD Model Texas Instruments ADS1202 Reference Design
CC2420DB_REFDES CC2420DB_REFDES ECAD Model Texas Instruments CC2420DB Reference Design
CC2430EM_REFDES CC2430EM_REFDES ECAD Model Texas Instruments CC2430EM Reference Design
CC2420EM_REFDES CC2420EM_REFDES ECAD Model Texas Instruments CC2420EM Reference Design

rf designer Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Tackling Multi-Bit Attenuator Designs

Abstract: No abstract text available
Text: of the major issues an RF designer often encounters during the design process is that the attenuation , for simulating and verifying linearity. If necessary, an RF DSA designer can make the appropriate , concern for an RF DSA designer . While GaAs pHEMT FETs are known for excellent RF performance, they tend , and issues faced during the design process for DSAs. As an RF designer , one quickly realizes that , , and so forth. The responsibilities of the RF designer include possessing comprehensive knowledge of


Original
PDF SKY12347-362LF SKY12343-364LF APN1002, Tackling Multi-Bit Attenuator Designs
2005 - THS3001

Abstract: THS4001 rf op amp SLYT121
Text: hindering their use. The first is, of course, cost. The RF designer must learn how to set the op amp's operating point, but the process is considerably easier than biasing a transistor stage. The RF designer , of ac performance. The RF designer must learn how to translate op amp ac performance parameters into , feedback? The RF designer considering op amps is presented with a dilemma. Are voltage-feedback , transistor-difficult to do. With an op amp, it is almost trivial. The RF designer must be aware of some issues with


Original
PDF SLYT121 THS3001 THS4001 rf op amp SLYT121
1999 - COP8SA-EPU

Abstract: AN-1098 COP8SAA716M9 LMX2320 COP8-EVAL-HI01 national semiconductor COP8 application note n5100
Text: included was written with the primary goal of allowing the RF designer the ability to configure the PLL. Please note, this is the RF designer , not a team of software engineers. The RF designer will also be , components, and gives design control to the RF designer . System designers may find that the COP8 could , www.national.com mation above, the RF designer can successfully incorporate a microcontroller into the , Synthesizers for RF Communications with National Semiconductor's COP8TM family of microcontrollers. COP8SAx7


Original
PDF LMX2320 COP8SA-EPU AN-1098 COP8SAA716M9 COP8-EVAL-HI01 national semiconductor COP8 application note n5100
1411D

Abstract: AN1197 APP1197
Text: receiver application, an RF designer needs to know the ADC's effective noise figure, in order to perform , figure. Conclusion An RF designer can trade off several parameters to optimize the ADC effective , distortion, SINAD, noise power density, RF , receiver, high speed ADCs, analog digital conver Sep 09, 2002 , signal-to-noise plus distortion (SINAD) specifications of analog-to-digital converters (ADCs) in RF receiver , that the noise is flat across the converter's Nyquist band and provides a designer with the means to


Original
PDF com/an1197 AN1197, APP1197, Appnote1197, 1411D AN1197 APP1197
1999 - Not Available

Abstract: No abstract text available
Text: RF Monolithics, Inc. website is loaded with Application Notes and Designer 's Guides to aid the novice or experienced RF designer when designing a new radio board. Our Application personnel and , Frequently Asked Customer Questions Q: What are Virtual Wire® Products? A: RF , miniature integrated hybrids employing surface acoustic wave (SAW) components and custom RF ASICs. Virtual , the ASH Transceiver Designer 's Guide at http://www.rfm.com for more information. Q: Are these


Original
PDF
2011 - REED RELAYS 5

Abstract: meder relay meder test coil
Text: . Most RF circuits need to be calibrated. Attenuator circuits allow the RF designer and user to calibrate , RF Attenuators Use Reed Relays For Attenuating RF Signals REED RELAYS REED SENSORS REED SWITCHES Introduction Test equipment capable of use in RF evaluations will generally require attenuation circuits to help them evaluate various aspects of RF components and RF circuitry. These attenuators need a switching device to switch the various dB levels that adjust the RF signals. Since


Original
PDF
ZMN2400

Abstract: ZigBee pcb design of zigbee home automation using zigbee ZG-2400E zmn2400hp type of antenna used in zigbee transceiver RFM ZG-241Z pcb layout of zigbee
Text: require an RF designer · Count on spending $150,000/year for an experienced RF designer . (You'll need to , products to be un-tethered from power cords Confidential & Proprietary RF Monolithics, Inc. ZigBee ­ , Confidential & Proprietary RF Monolithics, Inc. ZigBee ­ Make or Buy? · Concerns about Buying: ­ Cost ­ Flexibility ­ Control 4 Confidential & Proprietary RF Monolithics, Inc. ZigBee ­ Make or Buy? · , Module Vendor Conclusions Confidential & Proprietary RF Monolithics, Inc. ZigBee ­ Rolling Your


Original
PDF
2008 - LTM9001-AA

Abstract: instrumentation amplifier PCB layout DFN-10 Signal Path Designer Linear Technology Magazine receiver
Text: where an RF designer applies the signal and a digital designer retrieves the accurate output. Careful , that the disciplines required for the engineering on either side of the ADC, namely RF /IF design and , effort to properly drive the ADC. But who? Instead of adding more work to either designer 's plate , VDD = 3.3V SENSE LTM9001 0VDD = 0.5V TO 3.6V D15 IN­ RF ANTI-ALIAS FILTER SAW IN , RF signal chain. Why 162.5MHz? The ADC inside the LTM9001 has a full power bandwidth of 700MHz


Original
PDF 16-Bit, 130Msps DFN-10. LTM9001. LTM9001-AA instrumentation amplifier PCB layout DFN-10 Signal Path Designer Linear Technology Magazine receiver
1999 - TOKO 10.7MHz crystal filter

Abstract: SIEMENS saw filter 2 to 22pf trimmer working of colpitts oscillator oscillator resonator capacitor resistor resonator c28 siemens c45 colpitts crystal oscillator CMX018 ceramic filter 10.7MHz
Text: PCB track resonator. Refer to an RF /Microwave designer 's guide to obtain more information on , to modify the IF frequencies or filter bandwidth, refer to an RF designer 's guide for information on , CMX018 I/O pins, MIX2OUT and LIMIN, which have an impedance of 430. Refer to an RF designer 's guide to , impedance is obtained. Refer to an RF /Microwave designer 's guide to obtain more information on microstrip , the user to select an RF operating frequency between 860 - 935 MHz. The operating bandwidth and


Original
PDF EV0181 UM0181/1 CMX018 EV0181 TOKO 10.7MHz crystal filter SIEMENS saw filter 2 to 22pf trimmer working of colpitts oscillator oscillator resonator capacitor resistor resonator c28 siemens c45 colpitts crystal oscillator ceramic filter 10.7MHz
Increasing the Maximum Transmit Power Rating of a Power Amplifier Using a Power Combining Technique

Abstract: combiner THEORY
Text: chip module (MCM). Eventually, the RF designer should pay attention to the PCB layout design to make , by the use of a power combining technique. Power combiners and splitters are popular RF components that can be used to combine power from different sources, or to split RF receive signals for , configuration. The RF source, V1, is split into two signals, each one equal in amplitude and phase. The two , 32dB to 31.3dB (marker 2). Because the input for the two amplifiers comes from the same RF source, the


Original
PDF SKY65152-11 com/litweb/pdf/5988-3762EN com/uploads/documents/200968F Increasing the Maximum Transmit Power Rating of a Power Amplifier Using a Power Combining Technique combiner THEORY
1993 - MRF237

Abstract: mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 MRF1946A Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
Text: that spans 136 to 220 MHz, Motorola has provided a very versatile component for the RF designer , transistor. It uses a die geometry intended for RF power devices operating in the UHF region. The emitter , Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor , 237 MRF 1946A C6 C7 C9 C8 C16 C10 + C12 C11 RFC2 B RF INPUT C1 = , LINE C15 L5 L4 C1 12.5 V RF OUTPUT D1 = Diode, 1N4933 or Equivalent L1 = Base


Original
PDF AN955/D AN955 MRF1946A MRF237 mrf237 MOTOROLA motorola mrf237 motorola MRF VK200 mrf237 Transistor MRF237 Motorola transistors MRF MRF transistor High frequency MRF transistor
1993 - mrf237 MOTOROLA

Abstract: choke vk200 VK200 inductor of high frequencies motorola MRF MRF237 motorola mrf237 Motorola transistors MRF vk200 choke VK200 mrf237 motorola application note amplifier power
Text: very versatile component for the RF designer . CIRCUIT DESCRIPTION Smith chart techniques were used , of the new MRF1946A power transistor. It uses a die geometry intended for RF power devices operating , common emitter (TO-39) RF power transistor produces Figure 1. Engineering Model of MRF1946A Wideband , 237 MRF 1946A C6 C7 C9 C8 C16 C10 + C12 C11 RFC2 B RF INPUT C1 = , LINE C15 L5 L4 C1 12.5 V RF OUTPUT D1 = Diode, 1N4933 or Equivalent L1 = Base


Original
PDF AN955/D AN955 MRF1946A mrf237 MOTOROLA choke vk200 VK200 inductor of high frequencies motorola MRF MRF237 motorola mrf237 Motorola transistors MRF vk200 choke VK200 mrf237 motorola application note amplifier power
1993 - MRF237

Abstract: Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF1946A MRF transistor 237 MRF high power transistor
Text: that spans 136 to 220 MHz, Motorola has provided a very versatile component for the RF designer , . It uses a die geometry intended for RF power devices operating in the UHF region. The emitter , Motorola MRF237 was selected for the driver stage. This common emitter (TO-39) RF power transistor produces Figure 1. Engineering Model of MRF1946A Wideband Amplifier RF Application © Motorola, Inc , RFC2 B RF INPUT C1 = 56 pF Dura Mica C2 = 39 pF Mini-Unelco C3, C7 = 68 pF Mini-Unelco C4


Original
PDF AN955/D AN955 MRF1946A MRF237 Transistor MRF237 MRF1946 equivalent MRF transistor VK200 mrf237 Motorola transistors MRF High frequency MRF transistor MRF transistor 237 MRF high power transistor
circuit for a signal blocker

Abstract: APP1929 MAX1428
Text: , suppose the designer allows the RF front-end cascaded noise figure to degrade by 0.5dB (from the nominal , high-performance Nyquist analog-to-digital converter (ADC) in a sampling or sub-sampling receiver design, an RF designer needs to know the ADC's noise performance for both small- and large-signal inputs. The receiver , ( RF & IF) is determined; the minimum power gain ahead of the ADC is selected to meet the required , can be included either in the RF or IF stages (or both). When higher resolution converters are used


Original
PDF cdma2000 com/an1929 MAX1428: AN1929, APP1929, Appnote1929, circuit for a signal blocker APP1929 MAX1428
Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design

Abstract: No abstract text available
Text: creative RF designer , they can provide superior amplifier solutions for a variety of applications , Guest Column | February 10, 2014 Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design , , I was able to start my electrical engineering career designing radio frequency ( RF ) front ends for , impractical from a cost perspective. Thankfully, today’s discrete designer has many more processes and , . Successful discrete design is all about finding the optimal tradeoffs between key RF performance parameters


Original
PDF 1990s, Rethinking The Role Of pHEMT Cascode Amplifiers In RF Design
JS11

Abstract: DRYER DISPLAY 31878
Text: marketplace, the RF designer now has an effective high performing option when the manipulation of circuit , 0 EMJAPPLICATION NOTE 3MM Rotary Switch for RF Applications o, 'ne of the problems RF circuit designers encounter is the selection of a switch that will perform its desired function without , characteristics that allow it to perform at RF frequencies to I GHz. The performance charts that are presented , RF signals reliably and without distortion. CH1 S2iSM IOqMAG .5 dB; REFOdB 1: -.0443 dB 40.000


OCR Scan
PDF SM10gMAG I0MW3044 JS11 DRYER DISPLAY 31878
2005 - broadband rf power amp texas

Abstract: No abstract text available
Text: to hit the voltage rail of the op amp, thus losing precious codes. An RF designer , on the other , high-performance RF design, Part 2 By Bruce Carter (Email: r-carter5@ti.com) Advanced Linear Products, Op Amp Applications This is Part 2 in a two-part series devoted to the topic of using op amps for RF design. Part 1 focused on how to form an RF stage from op amps and the scattering parameters. Part 2 focuses on other RF specifications and some of the finer points of RF design. Frequency-response peaking


Original
PDF SLYT112 broadband rf power amp texas
2006 - RF Power Amplifiers

Abstract: SKY77152 "RF Power Amplifier" AN-1438 LM3200 LMV225 mobile rf power amplifier
Text: suggested that the handset RF designer verifies to see if the components meet the specifications of Table 1 , , the RF power amplifier typically operates at 6 dB to 40 dB back-off from the peak power or 1 dB , .) Consequently, the RF power amplifier operates with very low efficiency most of the time and is one of the most power consuming components in a handset. Studies show that the RF power amplifier consumes as much as , important to reduce the power consumption of RF power amplifiers in order to achieve a long battery life


Original
PDF IS-95 CDMA2000 CSP-9-111S2) CSP-9-111S2. AN-1438 RF Power Amplifiers SKY77152 "RF Power Amplifier" AN-1438 LM3200 LMV225 mobile rf power amplifier
1997 - draw pin configuration of ic 7400

Abstract: AN96084 BC807 BC858 CGY2030M DTC114YE DECT power philips dect 7.1 power amplifier circuit diagram 4.1 amplifier circuit diagram
Text: Group Caen, France Bruno Leroux RF designer Limeil Brevannes, France Keywords Telecom , This note describes the application of RF monolithic GaAs device in plastic SMD packages for DECT power , self biased with the incoming RF signal (see Fig.6). Fig. 6 Self biasing equivalent circuit As the gates are return to ground via resistors ,when a RF signal is applied ,and if the level of this , the RF signal.When the absolute maximum value of the signal (RF+DC) is less than 0.7V (Vgson) a


Original
PDF CGY2030M AN96084 CGY2030M draw pin configuration of ic 7400 AN96084 BC807 BC858 DTC114YE DECT power philips dect 7.1 power amplifier circuit diagram 4.1 amplifier circuit diagram
2003 - xbox schematic diagram

Abstract: playstation 2 joystick Playstation 3 joystick 2.4GHz spread spectrum rc radio circuit diagram 2.4GHz rc radio circuit diagram playstation controller microcontroller xbox controller playstation controller joystick PS2 playstation microcontroller
Text: ' associated with RF design. When choosing a radio transceiver the system designer should make sure it has , equipment a good RF designer can tune up these types of designs without too much trouble and basically , situations of the game (e.g. a car wreck). What all this means to the controller designer is that it's not , of the designer . First generation wireless controllers achieved basic functionality but their , should be weighed carefully by the designer . Local regulatory issues must always be met although most


Original
PDF ML2724 WP-002 xbox schematic diagram playstation 2 joystick Playstation 3 joystick 2.4GHz spread spectrum rc radio circuit diagram 2.4GHz rc radio circuit diagram playstation controller microcontroller xbox controller playstation controller joystick PS2 playstation microcontroller
1999 - potentiometer 5k ohm pcb mount

Abstract: High-Frequency Modulation IC for Laser Diode fujitsu, lasers Schematic diagram laser 3000 mw
Text: operation. In order to aid the RF designer in optimizing PCB designs, a Smith chart for a typical HFCT , are offered with 50 ohm RF matching circuitry. These impedance options allow easy matching with


Original
PDF HFCT-3024 5968-4808E potentiometer 5k ohm pcb mount High-Frequency Modulation IC for Laser Diode fujitsu, lasers Schematic diagram laser 3000 mw
2008 - Not Available

Abstract: No abstract text available
Text: . SAW filters can easily be integrated by the RF designer as part of the front-end solution to provide , at ever-decreasing price points. To achieve success in the marketplace, today’s system designer , solutions, filter devices and advanced digital logic elements and today’s system designer has an , recently introduced CPS-10/6Q, so the designer can pick the combination of port count, performance and , functionality in an ASIC or FPGA. Utilizing FIC off-the-shelf components allows the designer to use valuable


Original
PDF 10-08/MG/BWD/HOP/500 FLYR-WIRELESS-108
Passive GPS ceramic patch antenna

Abstract: powerhelix electrical AN-347 GRM1555C1H180JZ01 act study guide Shielded Microstrip Line geohelix Signal Path Designer AN347 application notes Sarantel geohelix antenna
Text: . However, to the RF designer these capacitors do very little to stop in band noise on power supplies. To , . 12 4.5. RF Chokes , receivers requires very careful attention to good RF engineering practices. By the time they reach the , desired antenna, which contain information for the designer on the specific requirements of the GeoHelix , to note is that Sarantel GeoHelix-P2, and SkyTune-P present a DC short at the RF output terminal


Original
PDF AN-347 Passive GPS ceramic patch antenna powerhelix electrical GRM1555C1H180JZ01 act study guide Shielded Microstrip Line geohelix Signal Path Designer AN347 application notes Sarantel geohelix antenna
KT 805

Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Text: microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage , designer might consider using a commercially available inductor as the RF choke in the bias circuit of , optimum performance. A Darlington amplifier is a 2-port device: RF input, and combined RF output and bias , ground will minimize common path impedance for best RF performance. Internal resistors in Figure 1 determine the DC operating point of the transistors and provide feedback to set RF gain, bandwidth, and


Original
PDF AN-60-010) AN-60-010 M120106 AN60010 KT 805 Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
2015 - Not Available

Abstract: No abstract text available
Text: . Super Wide-band RF Choke The circuit designer might consider using a commercially available inductor as , Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family , : RF input, and combined RF output and bias input. It is housed in a 4-lead package including 2 ground leads; connecting both of them to external ground will minimize common path impedance for best RF


Original
PDF AN-60-010) AN-60-010 M150261 AN60010
Supplyframe Tracking Pixel