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LT1056CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CIH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1055CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LM118AMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1077CMH Linear Technology IC OP-AMP, MBCY, Operational Amplifier
LT1222MH Linear Technology IC OP-AMP, MBCY, Operational Amplifier

rf Amplifier mhz Doherty 470-860 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - PTFB090901EA

Abstract: No abstract text available
Text: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics ( Doherty , 758MHz) – POUT = 63W avg – Gain = 17.5dB – Efficiency = 42% PXAC201602FC n 1880–2025MHz n Asymmetric Design n Typical RF Characteristics ( Doherty , 2025MHz) – POUT = 22.4W avg â , Infrastructure RF Power Transistors [400MHz to 2700MHz] Product Operating Frequency [ MHz ] Matching


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PDF PTVA093002TC 960MHz 758MHz) PXAC201602FC 2025MHz 2025MHz) H-49248H-4 H-37248-4 400MHz 2700MHz] PTFB090901EA
Not Available

Abstract: No abstract text available
Text: MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 470-860 MHz , 600 W, 50 V LDMOS BROADBAND RF , MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 8 RF Device Data Freescale Semiconductor 470-860 MHz , — 470-860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale , MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 11 TYPICAL CHARACTERISTICS — 470-860 MHz REFERENCE , MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 12 RF Device Data Freescale


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PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
2011 - C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 Rogers RO4350B microstrip rf Amplifier mhz Doherty 470-860 capacitor 104 Z30 ATC100B240JT500X 470-860 mhz Power amplifier w MRFE6VP
Text: MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 470-860 MHz , 600 W, 50 V LDMOS BROADBAND RF , MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 9 470-860 MHz , 470-860 MHz REFERENCE CIRCUIT COAX1 Z25 L1 VBIAS C1 C2 R1 C3 Z23 RF INPUT Z1 , Schematic - 470-860 MHz MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data , MRFE6VP8600HSR6 MRFE6VP8600HSR5 12 RF Device Data Freescale Semiconductor 40 35 665 MHz D 0


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PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 Rogers RO4350B microstrip rf Amplifier mhz Doherty 470-860 capacitor 104 Z30 ATC100B240JT500X 470-860 mhz Power amplifier w MRFE6VP
2011 - MRFE6VP8600H

Abstract: MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C C19C40 CRCW120610R0JNEA mrfe6vp8600hs vishay z47 capacitor 104 Z30
Text: 470-860 MHz , 600 W, 50 V LDMOS BROADBAND RF POWER TRANSISTORS · Typical Pulsed Broadband Performance , , e.g. in a Doherty Peaking Stage - Enables Fast, Easy and Complete Shutdown of the Amplifier · , Schematic - 860 MHz , DVB-T (8k OFDM) MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF , MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 8 RF Device Data Freescale Semiconductor 470-860 MHz REFERENCE , MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor 9 470-860 MHz REFERENCE CIRCUIT Table


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PDF MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 MRFE6VP UT-141C-25 C3225X7R2A225KT UT-141C C19C40 CRCW120610R0JNEA mrfe6vp8600hs vishay z47 capacitor 104 Z30
2015 - D9 DG transistor smd

Abstract: blf188 RF MANUAL RF MANUAL 19TH EDITION MOSFET TOSHIBA 2015 BB 804 varicap diode BAP50-03 spice model toshiba car audio catalog 2015 Infineon Power Management Selection Guide 2011 BGU7072
Text: range from 1800 to 2200 MHz . NXP Semiconductors RF Manual 19th edition 9 Recommended products , Doherty Driver/final MMIC fmin ( MHz ) fmax ( MHz ) P1dB (W) Type 700 700 1 3400 700 , RF diode PIN diode SOT753 BAP70Q Function Product Frequency range ( MHz ) Gain , BGA3015 BGA3018 RF forward amplifier Drop amplifier 1006 12 15 18 Function Product Frequency range ( MHz ) Gain (dB) Type Drop amplifier 5 - 300 5 - 300 5 - 300 12 15 18


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transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: , MODE-S - 960-1215 MHz AVIONICS- S BAND - 2700-3500 MHz CATV - 50-1000 MHz AMPLIFIER MODULES , www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 MOSFETS Frequency MHz 2-100 2-100 , RF POWER TRANSISTOR SELECTION GUIDE August 2000 BIPOLARS CONTINUED Frequency MHz 88-108 , RF POWER TRANSISTOR SELECTION GUIDE August 2000 BIPOLARS CONTINUED Frequency MHz 225-400 , www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 BIPOLARS CONTINUED Frequency MHz 2300


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PDF CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
2010 - MRF8P9040N

Abstract: MRF1513NT1 s2p rf Amplifier mhz Doherty 470-860 MRF8S21100H MRF8S21100HS MRF8S9220HR3 MRF8S9170NR3 AN1643 MRF6P23190H MRF6VP3450HR6
Text: Doherty RF Power Transistors . . . . . . . . . . . . . . . . . . . . 19 To 1000 MHz . . . . . . . . . . . , Linear Transistors - To 6000 MHz . . . . . . . . . . . . . . . . 18 Doherty RF Power Transistors . . . , Guide RF Low Power Amplifiers, LDMOS Power Transistors, GaAs Power Transistors, Power Amplifier ICs , . . . . . . . . . 15 RF WiMAX, WiBro, BWA Power Transistors . . . . . . . . 16 To 6000 MHz . . . . , . . . . . . . . . . . . . . . . . . . . . . . . 24 RF Amplifier ICs . . . . . . . . . . . . . . . .


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2000 - BB 509 varicap diode

Abstract: TEA6848H adi cmos bipolar SiGe diode varicap BB 112 RF MANUAL ULTRA FAST DIODES SANYO catalog PIN diode ADS model bf1107 spice model tea6849 ON503
Text: RF pre-amplifier 870 MHz Push-pulls 1003 MHz Function Product RF reverse amplifier , L5 bands, RF energy, and ISM up to 1600 Mhz . New products added to this edition include broadband , HPA Final Integrated Doherty MMIC fmin ( MHz ) fmax ( MHz ) P1dB (W) Package Type , section 3.1, as this type is not yet released for mass production Doherty amplifier technology for , HPA Integrated Doherty Function Product MPA MMIC (medium power amplifier ) Function Dual VGA


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2009 - gsm booster circuit

Abstract: MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit MRF6VP11KH circuit booster gsm MC44BS373 MW6S004N
Text: RF Amplifier ICs (continued) Test Signal VDD Volts Gain (Typ)/Freq. dB/ MHz Eff. (Typ , Transistors RF Amplifier ICs RF General Purpose Amplifiers RF Modulators, Booster - Splitter, Stereo , Power Products refer to SG46, RF Product Selector Guide. SG1009-4 SG1009Q22009 2000 to 2200 MHz , / MHz Eff. (Typ)/Freq. %/ MHz °C/W Product JC RF GaAs Power Transistors Product , . (Typ) % °C/W RF WiMAX, WiBro, BWA Power Transistors and RF Amplifier ICs Frequency Band(37


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PDF SG1009Q22009 MRF6VP11KH MRF6VP21KH MRF6VP41KH/HS gsm booster circuit MRF5P21180H gsm 900 dual band signal booster gsm signal Booster MRF8S21170H gsm signal booster circuit MRF6VP11KH circuit booster gsm MC44BS373 MW6S004N
2010 - NJM 78L08UA-ND

Abstract: nxp 544 RO3000 S0805W104K1HRN-P4 S0805W104K1HRN d 2095 transistor 1J503S digital Pre-distortion digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF
Text: RF performance are also described. The amplifier uses two BLF7G22LS-130 devices in a Doherty , AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 - 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier , RF performance, Digital PreDistortion (DPD), UMTS, W-CDMA, BLF7G22LS , stations using the BLF7G22LS-130 LDMOS transistor AN10885 NXP Semiconductors Doherty RF


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PDF AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 RO3000 S0805W104K1HRN-P4 S0805W104K1HRN d 2095 transistor 1J503S digital Pre-distortion digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF
2011 - Rogers 3006

Abstract: transistor c118 BLF7G20LS-200 transistor NPN c115 NJM78L08UA R105 NJM 78L08UA-ND C112 C109 potentiometer 201E
Text: MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 4. RF performance 4.1 Network analyzer , AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 - 4 January 2011 , NXP Semiconductors 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Revision , NXP Semiconductors 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 1 , state-of-the-art Doherty power amplifier for base stations in the 1930 MHz to 1990 MHz band using the BLF7G20LS


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PDF AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 transistor NPN c115 NJM78L08UA R105 NJM 78L08UA-ND C112 C109 potentiometer 201E
2010 - GRM32ER7YA106K88L

Abstract: AN10847 3214W-1-201E CRCW08052K00FKTA GRM31MR71H105K88L ATC100B150JT500X 2N2222 NJM 78L08UA-ND GMSK fm cw 7808
Text: multi-carrier applications. This application note describes the RF performance analysis of a Doherty amplifier , AN10847 Doherty RF performance analysis using the BLF6G20-230PRN Rev. 01 - 29 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty amplifiers, main amplifier , peak amplifier , AB amplifiers, RF performance, Digital PreDistortion (DPD), base , power and high-efficiency architecture of the Doherty amplifier coupled with ease of implementation


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PDF AN10847 BLF6G20-230PRN BLF6G20-230PRN, AN10847 GRM32ER7YA106K88L 3214W-1-201E CRCW08052K00FKTA GRM31MR71H105K88L ATC100B150JT500X 2N2222 NJM 78L08UA-ND GMSK fm cw 7808
NPT25015

Abstract: matlab using ofdm using peak to average power GaN amplifier AN-003 an-003 nitronex AN003 Nitron Doherty amp amplifier circuit diagram Gan transistor
Text: Application Note AN-003 Wideband Doherty Amplifier for WiMAX Introduction Doherty Theory of , techniques such as the Doherty amplifier configuration are becoming more widely adopted. The Nitronex family of GaN devices is well suited for implementing the Doherty amplifier configuration. The NPT25015 , LDMOS and GaAs. The Doherty amplifier circuit is more complex than a two stage parallel amplifier . However, the increased complexity is offset by a more flexible amplifier architecture. That is, Doherty


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PDF AN-003 NPT25015 matlab using ofdm using peak to average power GaN amplifier AN-003 an-003 nitronex AN003 Nitron Doherty amp amplifier circuit diagram Gan transistor
ATV7050

Abstract: AX RF amplifier IC
Text: rug gedness and reliability. · · · · 470-860 MHz 30 W - Pout 25.5 V - V C C 8 dB M in Gain, C lass A 30 W - 470-860 MHz LINEAR POW ER AMPLIFIER M A X IM U M RATINGS R ating Collector V oltage S u p , I SEM IC O N D U C T O R TECHNICAL DATA MOTOROLA A dvance Inform ation The RF Line ATV7050 Lin ear P o w e r A m p lifie r . a solid state C lass A amplifier specifically designed for TV transposers and transmit ters. This amplifier incorporates microstrip technology and discrete


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PDF ATV7050 ATV7050 AX RF amplifier IC
2010 - OP6180

Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 GSM /OP6180 transistor c118 transistor c114 diagram digital Pre-distortion
Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 - 16 July 2010 , AN10921 NXP Semiconductors BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier 5. RF , BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier 5.3 6-carrier multi-carrier GSM measurements , 25 AN10921 NXP Semiconductors BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier , © NXP B.V. 2010. All rights reserved. BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier


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PDF AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 GSM /OP6180 transistor c118 transistor c114 diagram digital Pre-distortion
NPT25100

Abstract: matlab using ofdm using peak to average power amplifier diagram 6 ghz amplifier 20w ofdm using peak to average power using matlab inverter using two parallel transformer main amplifier GaN PA an-005 nitronex ofdm amplifier
Text: Application Note AN-005 2.5-2.7GHz 20W Doherty Amplifier for WiMAX Applications Using the , theory and characterization of a Doherty amplifier reference circuit that incorporates two Nitronex , techniques such as the Doherty amplifier configuration are becoming widely adopted. The Nitronex family of GaN devices is well suited for implementing the Doherty amplifier configuration. The NPT25100 is a , dB back-off while exhibiting >30% drain efficiency over a 200 MHz operating bandwidth. The Doherty


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PDF AN-005 NPT25100 NPT25100 matlab using ofdm using peak to average power amplifier diagram 6 ghz amplifier 20w ofdm using peak to average power using matlab inverter using two parallel transformer main amplifier GaN PA an-005 nitronex ofdm amplifier
2008 - A High Efficiency Doherty Amplifier with Digital Predistortion for WiMAX

Abstract: CGH27030 op4400 200w power amplifier PCB layout GaN amplifier 100W OP44 200w mono ultrarf AD9233 CGH27030F
Text: the RF bandwidth of the Doherty amplifier , and (2) increasing the video bandwidth by minimizing the , Frequency Design DOHERTY AMPLIFIER A High Efficiency Doherty Amplifier with Digital Predistortion , Design, LLC T he Doherty amplifier architecture is a well known technique offering the potential , 2.5-2.7 GHz Doherty amplifier that achieves, when augmented with digital predistortion, 8 watts of , specifications. The appeal of the Doherty amplifier configuration is that it involves familiar core amplifier


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2005 - MMM6029

Abstract: MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
Text: Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4 , , 1800 and 1900 MHz bands. This device is an extremely small amplifier in size (6 mm x 6 mm, height: 1 , P/648, DW/751G Amplifiers Product RF Freq. Range MHz Supply Voltage Range Vdc , RF power amplifier applications. Several families of products have been targeted for specific markets , -10 SG1009Q42005 RF High Power LDMOS Transistors (continued) Mobile - To 520 MHz (continued) Product


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PDF SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 MMM6007 NONLINEAR MODEL LDMOS baseband DigRF semiconductor cross index MW6S010 MRF5S9080NB MMM6000 MRF648 applications MMH3101NT1
2013 - Not Available

Abstract: No abstract text available
Text: RF Power amplifier only converts 25-30% of the means that TV station operators need to cut down , efficiency drops even RF Power Amplifier Options further. One can imagine that large and complex , for broadband. For instance in UHF-TV, one amplifier higher RF Power amplifier efficiency, you , %. For UHF applications the huge challenge in front of us was to design a Doherty amplifier with a 52 , (470-806MHz) Doherty amplifier using some patent Doherty Envelope Tracking systems have been built with


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2011 - jrc 78L08

Abstract: RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka BLF6G15-250PBRN AN10923 GRM32ER71H106KA12 jrc78L08
Text: AN10923 1.5 GHz Doherty power amplifier for base station applications using the BLF6G15L , power transistor, Doherty architecture, LDMOS, Power amplifier , W-CDMA, LTE, Base station, BLF6G15L , Semiconductors AN10923 1.5 GHz Doherty power amplifier using the BLF6G15L-250PBRN Revision history Rev v , GHz Doherty power amplifier using the BLF6G15L-250PBRN 1. Introduction This application note describes the design and performance of a Doherty power amplifier optimized for use in 1.5 GHz 3GPP E-UTRA


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PDF AN10923 BLF6G15L-250PBRN BLF6G15L-250PBRN jrc 78L08 RESISTOR POTENTIOMETER GRM32ER71H106KA12L stripline power combiner splitter GRM31MR71H105KA88L grm32er71h106ka BLF6G15-250PBRN AN10923 GRM32ER71H106KA12 jrc78L08
2013 - Not Available

Abstract: No abstract text available
Text: Semiconductors 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 4. RF performance 4.1 , AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October , , Doherty architecture, LDMOS, power amplifier , RF performance, Digital PreDistortion (DPD), W-CDMA , AN10944 NXP Semiconductors 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS , Semiconductors 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 1. Introduction This


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PDF AN10944 BLF7G20LS-200 BLF7G20LS-200 1J503S 1P503S
2010 - CRCW08050R0FKEA

Abstract: S0805W104K1HRN-P4 3214W-1-201E BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
Text: Doherty power amplifier using the BLF7G27LS-150P 1. Introduction This application note describes RF , NXP Semiconductors Doherty power amplifier using the BLF7G27LS-150P 3. RF Performance 3.1 , AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 - 16 August , , Doherty architecture, LDMOS, RF performance, Digital PreDistortion (DPD), IS-95, W-CDMA, BLF7G27LS-150P Abstract This application note describes 2.5 GHz to 2.7 GHz RF performance tests for a Doherty power


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PDF AN10933 BLF7G27LS-150P IS-95, BLF7G27LS-150P CRCW08050R0FKEA S0805W104K1HRN-P4 3214W-1-201E BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 national 2n2222
2002 - BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 920 960 MHz `` Doherty `` `` `` ESD `` RoHS 2002/95/EC 10 RF 16 Function , Frequency Power doubler 870 MHz 870 MHz Push-pulls 1 GHz Function RF power amplifier Product Power , CGD985HCi CGD987HCi 870 MHz RF power amplifier Power doublers RF pre-amplifier 870 MHz Push-pulls 1003 MHz 1003 MHz Function RF reverse amplifier Product Reverse hybrids Frequency 5-75 MHz , 8 RF 8 "" 8 `` 100 MHz `` 270 SOT502 `` `` `` `` 8 Doherty


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PDF PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
2005 - stripline directional couplers

Abstract: MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
Text: , land mobile and CATV systems. RF FRONT END ICs RFICs Downconverters Product Input Freq. MHz , Power Amplifier Modules Product Freq. Range MHz Supply Voltage Range Vdc Saturated Pout , Amplifiers Product RF Freq. Range MHz Supply Voltage Range Vdc Supply Current mA (Typ , LDMOS technology is ideally suited for RF power amplifier applications. Several families of products , Guide. SG1009-10 SG1009Q32005 RF HIGH POWER LDMOS TRANSISTORS (continued) Mobile - To 520 MHz


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PDF SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF1511NT1 ESD Product Selector Guide MRF377HR5 NONLINEAR MODEL LDMOS MRF5S9080NB MRF6S9045NR1 MRF6S9045NBR1 MMM6025
2007 - linear amplifier 470-860

Abstract: RPAP470860M10 470-860 mhz Power amplifier w
Text: RPAP470860M10 Preliminary Solid State Broadband High Power Pallet Amplifier 470-860 MHz ­ 10W The RPAP470860M10 is a 10W pallet amplifier for the 470-860 MHz band. This Class A pallet amplifier utilizes three MOSFET gain stages providing typical power gain of 39 dB at 10 Watts Peak-Sync. A , Absolute Maximum Ratings: 10 Watts Class A 50 ohms input/output No circuit tuning or RF assembly 12 , -30 -20 Max 860 Unit MHz Watts W dB mW Amps 1.5:1 +70 dBc dBc °C Available


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PDF RPAP470860M10 RPAP470860M10 -54dB linear amplifier 470-860 470-860 mhz Power amplifier w
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