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LTC4242CG#TR Linear Technology LTC4242 - Dual Slot Hot Swap Controller for PCI Express; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C
LTC1643AL-1IGN#PBF Linear Technology LTC1643A - PCI-Bus Hot Swap Controller; Package: SSOP; Pins: 16; Temperature Range: -40°C to 85°C
LTC4242CUHF#TRPBF Linear Technology LTC4242 - Dual Slot Hot Swap Controller for PCI Express; Package: QFN; Pins: 38; Temperature Range: 0°C to 70°C
LTC1643AL-1CGN Linear Technology LTC1643A - PCI-Bus Hot Swap Controller; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC1643AHCGN#TR Linear Technology LTC1643A - PCI-Bus Hot Swap Controller; Package: SSOP; Pins: 16; Temperature Range: 0°C to 70°C
LTC4242CG Linear Technology LTC4242 - Dual Slot Hot Swap Controller for PCI Express; Package: SSOP; Pins: 36; Temperature Range: 0°C to 70°C

radar circuit component Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2014 - radar sensor

Abstract: microwave RADAR motion sensors RADAR-IPM-165
Text: DATA SHEET Radar based motion detector module RADAR-IPM-165 Description Description , €¢ Innovative Radar operating principle: • High sensitivity on slightest movement • Ideal for motion , Alarm and safety applications OEM applications in automotive Technical Data Description Radar , 24.250 GHz F: 24.075 . 24.175 GHz The radar module has been developed to cater for majority of the , difference with respect to the background, the radar module responds to all movements in the direction of the


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PDF RADAR-IPM-165 D-78166 radar sensor microwave RADAR motion sensors RADAR-IPM-165
2013 - Not Available

Abstract: No abstract text available
Text: -200P_LS-200P Product data sheet Component layout for a class-AB production test circuit All information provided , transistor Table 9. List of components test circuit See Figure 2. Component Description Value , of components. Fig 3. Component layout for a class-AB application circuit Table 10. List of components application circuit See Figure 2. Component Description Value Remarks multilayer , Semiconductors LDMOS S-band radar power transistor 7.5.2 Application circuit VDS = 32 V; IDq = 50 mA; tp


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PDF BLS7G2730L-200P; BLS7G2730LS-200P BLS7G2730L-200P LS-200P
2014 - Not Available

Abstract: No abstract text available
Text: S-band radar power transistor 7.3 Test circuit information Printed-Circuit Board (PCB): Rogers , BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 , radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance , production test circuit . pulsed RF f VDS PL Gp D tr tf (GHz) Test signal ,  S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz BLS7G2729L(S)-350P NXP


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2014 - RSM3650

Abstract: radar sensor
Text: DATA SHEET Radar based motion detector module RSM3650 Description Characteristic features • Universal HF-module (K-Band Transceiver), without NF-Signal amplifier • Innovative Radar operating , Ordering number The Radar module has been developed to cater for majority of the requirements which are , to the background, the radar module responds to all movements in the direction of the sensor. With , . Radar module works through many materials, e.g. plastics, hence vandalism safe, hidden installation is


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PDF RSM3650 D-78166 RSM3650 radar sensor
2002 - 475 50K

Abstract: 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver , L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C · High power gain , , connected to flange APPLICATIONS 1 · L-band radar applications in the 1200 to 1400 MHz frequency , = 25 °C in a common source test circuit . Pulsed class-AB; t = 1 ms; = 10 % f (MHz) VDS , °C 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS


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PDF M3D381 BLL1214-35 OT467C OT467C) SCA74 613524/01/pp8 475 50K 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
2002 - ATC100A

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar , flange APPLICATIONS 1 • L-band radar applications in the 1200 to 1400 MHz frequency range. 3 , source test circuit . Pulsed class-AB; t = 1 ms; δ = 10 % f (MHz) VDS (V) PL (W) Gp , 2002 Sep 27 2 Philips Semiconductors Product specification L-band radar LDMOS driver


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PDF M3D381 BLL1214-35 OT467C SCA74 613524/01/pp8 ATC100A
2008 - BLS6G3135S-120

Abstract: BLS6G3135-120
Text: . Component layout for 3.1 GHz to 3.5 GHz MHz test circuit Table 9. List of components (see Figure 10) To , BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 - 29 May 2008 , for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; = 10 %; IDq = 100 mA; in a class-AB production test circuit , Hazardous Substances (RoHS) BLS6G3135-120; BLS6G3135S-120 NXP Semiconductors LDMOS S-Band radar


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PDF BLS6G3135-120; BLS6G3135S-120 BLS6G3135-120 6G3135S-120 BLS6G3135S-120
2002 - ATC200B

Abstract: BLL1214-250 mld865
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , inductance. 3 source, connected to flange APPLICATIONS handbook, halfpage · L-band radar , . QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit . MODE OF OPERATION , L-band radar LDMOS transistor BLL1214-250 THERMAL CHARACTERISTICS SYMBOL PARAMETER


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PDF M3D379 BLL1214-250 OT502A SCA74 613524/02/pp12 ATC200B BLL1214-250 mld865
1997 - LM2291

Abstract: loral coaxial switch missile Microwave Radar Seekers MICRON POWER RESISTOR MLS national linear application notes book DS96F172mj LM-229 LM556* application notes andrews microwave antenna lm229
Text: VOLUME NO. 13 1997 For Radar Applications, National Delivers M ilitary and aerospace , high-performance components for their construction. Regardless of the radar 's task - terrestrial or space-based , that build these radars. This Radar Silicon Solution represents a generic radar application with , For Radar Applications, National Delivers, page 1 INDUSTRY ISSUE Can Emerging IEEE Test Standards , , Dot1 focuses on digital signals on isolated printed circuit cards. Dot1 defines a 4-wire (optionally


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2013 - Not Available

Abstract: No abstract text available
Text: S-band radar power transistor Fig 1. Definition of transistor impedance 7.3 Test circuit , BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 2 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar , circuit . VDS PL Gp D tr tf (V) (W) (dB) (%) (ns) (ns) 3.1 32 , , regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications  S-band radar applications in


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PDF BLS7G3135LS-200
2008 - SOT608B

Abstract: No abstract text available
Text: . Component layout for 3.1 GHz to 3.5 GHz test circuit Table 8. List of components See Figure 9. Component , BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 - 17 December 2008 , for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; = 10 %; IDq = 50 mA; in a class-AB production test circuit . Mode , radar power transistor 1.3 Applications I S-Band power amplifiers for radar applications in the 3.1


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PDF BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20 SOT608B
2013 - Not Available

Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 - 23 September 2013 , radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical , circuit . Test signal pulsed RF f (GHz) 2.7 to 2.9 VDS (V) 32 PL (W) 350 Gp (dB) 13 D (%) 50 tr (ns) 8 tf , , regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2003 - Not Available

Abstract: No abstract text available
Text: L-band radar LDMOS transistor BLL1214-250 List of components (see Fig.10) COMPONENT DESCRIPTION , DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES â , inductance. 3 source, connected to flange APPLICATIONS • L-band radar applications in the 1200 , .1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit


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PDF M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10
Types of Radar Antenna

Abstract: radar system with circuit diagram BPF filter rf radar frontend chip ghz radar detector detector 10-25 ghz fpga radar tp 4056 datasheet tp 4056 diagram radar circuit echo mixer circuit diagram
Text: transceiver. While this component is intended to be an element of the miniaturized radar electronics module , IPN Progress Report 42-158 August 15, 2004 Design and Performance of a Miniature Radar L-Band Transceiver D. McWatters,1 D. Price,2 and W. Edelstein1 Radar electronics developed for past , of future radar missions, a "generic" radar module was conceived. The module includes a 1.25 , L-band radar . For very large aperture phased-array spaceborne radar missions, the large dimensions of


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PDF 25-GHz Types of Radar Antenna radar system with circuit diagram BPF filter rf radar frontend chip ghz radar detector detector 10-25 ghz fpga radar tp 4056 datasheet tp 4056 diagram radar circuit echo mixer circuit diagram
2003 - ATC200B

Abstract: BLL1214-250 MLD861
Text: L-band radar LDMOS transistor BLL1214-250 List of components (see Fig.10) COMPONENT DESCRIPTION , DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS , Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES PINNING - SOT502A , inductance. 3 source, connected to flange APPLICATIONS · L-band radar applications in the 1200 to , . QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit . MODE OF OPERATION


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PDF M3D379 BLL1214-250 OT502A SCA75 613524/03/pp10 ATC200B BLL1214-250 MLD861
1997 - doppler radar

Abstract: abstract for robotics project doppler sensor diagram radar circuit rf doppler sensor architecture of TMS320C50 data sheet for doppler radar pulse doppler radar radar match filter design radar circuit component
Text: ) controlled dynamically by the Radar Manager. This project is implemented on a Printed Circuit Board ( PCB , Processing for Monopulse Doppler Radar Authors: P.H. Dezaux, X. Gilles, S. Marques EFRIE, France , . 20 Communication with the Radar Manager , . 23 Front-End Processing for Monopulse Doppler Radar Abstract FEPMR is standing for Front-End and Doppler Processing for Monopulse Doppler Radar . It is a PCB at the frontier between the RF


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PDF SPRA299 doppler radar abstract for robotics project doppler sensor diagram radar circuit rf doppler sensor architecture of TMS320C50 data sheet for doppler radar pulse doppler radar radar match filter design radar circuit component
1997 - doppler radar

Abstract: radar circuit component pulse doppler radar Monopulse radar dsp processor diagram radar circuit Ground Radar diagram sensor doppler array pulse compression radar radar front end
Text: ) controlled dynamically by the Radar Manager. This project is implemented on a Printed Circuit Board ( PCB , Processing for Monopulse Doppler Radar Authors: P.H. Dezaux, X. Gilles, S. Marques EFRIE, France , . 20 Communication with the Radar Manager , . 23 Front-End Processing for Monopulse Doppler Radar Abstract FEPMR is standing for Front-End and Doppler Processing for Monopulse Doppler Radar . It is a PCB at the frontier between the RF


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PDF SPRA299 doppler radar radar circuit component pulse doppler radar Monopulse radar dsp processor diagram radar circuit Ground Radar diagram sensor doppler array pulse compression radar radar front end
2013 - Not Available

Abstract: No abstract text available
Text: transistor Table 9. List of components …continued For test circuit see Figure 2. Component , . Component layout for class-AB production test circuit BLL6H1214-500_1214LS-500 Product data sheet , BLL6H1214-500; BLL6H1214LS-500 LDMOS L-band radar power transistor Rev. 3 — 5 August 2013 , for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical , test circuit . pulsed RF f VDS PL Gp D tr tf (GHz) Test signal (V


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PDF BLL6H1214-500; BLL6H1214LS-500 BLL6H1214-500 1214LS-500
2010 - Not Available

Abstract: No abstract text available
Text: LDMOS L-band radar power transistor 7.3 Application circuit C1 C3 C10 C9 C2 C7 C4 R1 C8 , BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 02 - 2 March 2010 , for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit . Mode , Semiconductors BLL6H1214L(S)-250 LDMOS L-band radar power transistor 1.3 Applications L-band power


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PDF BLL6H1214L-250; BLL6H1214LS-250 BLL6H1214L-250 1214LS-250
2010 - radar amplifier s-band

Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
Text: 0.035 mm. For test circuit see Figure 10. Component Description Value C1, C2, C3, C4 , 0.035 mm. See Table 9 for a list of components. Fig 10. Component layout for test circuit , BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 - 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar , = 25 °C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit . pulsed RF


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PDF BLS6G2731S-130 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
2009 - 800B

Abstract: No abstract text available
Text: LDMOS L-band radar power transistor 7.3 Application circuit C1 C10 C3 C9 C2 C7 C8 , BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 - 11 December 2009 , for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical , circuit . pulsed RF f VDS PL Gp D tr tf (GHz) Mode of operation (V) (W , L-band radar power transistor 1.3 Applications L-band power amplifiers for radar applications in the


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PDF BLL6H1214L-250; BLL6H1214LS-250 BLL6H1214L-250 1214LS-250 800B
2012 - BLF7G3135L-350P

Abstract: ATC700A
Text: LDMOS S-band radar power transistor Table 9. List of components For test circuit see Figure 2 , BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 1 - 12 October 2012 , for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit . Test , ) 1.3 Applications S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency


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PDF BLS7G3135L-350P; BLS7G3135LS-350P BLS7G3135L-350P 7G3135LS-350P BLF7G3135L-350P ATC700A
2010 - Radar pallet

Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 - 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar , in a common source class-AB test circuit . Mode of operation f (GHz) class-AB; tp = 300 s; = , friendly and easy to use) 1.3 Applications General S-Band radar applications BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 2. Pinning information 2.1 Pinning GATE 1 6


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PDF BLS6G2933P-200 Radar pallet RO6006 radar amplifier s-band ATC100A ATC100B
2013 - Not Available

Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 2 - 6 May 2013 , radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical , circuit . Test signal pulsed RF f (GHz) 2.7 to 2.9 VDS (V) 32 PL (W) 350 Gp (dB) 12 D (%) 50 tr (ns) 20 tf , , regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequent range 2.7 GHz to 2.9 GHz NXP Semiconductors BLS7G2729L(S)-350P LDMOS S-band radar power


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PDF BLS7G2729L-350P; BLS7G2729LS-350P BLS7G2729L-350P LS-350P
2010 - Not Available

Abstract: No abstract text available
Text: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar , in a common source class-AB test circuit . Mode of operation f (GHz) class-AB; tp = 300 μs; Π, radar applications BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 2 , reserved. 2 of 11 BLS6G2933P-200 NXP Semiconductors LDMOS S-Band radar pallet amplifier 4


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PDF BLS6G2933P-200
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