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Part Manufacturer Description Datasheet Download Buy Part
LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC2927ITS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TR Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#TRM Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

power transistors table Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - LBE2003S

Abstract: LBE2009S LCE2009S SC15
Text: microwave power transistors Table 1 f (MHz) Scattering parameters LBE2003S: VCE = 18 V; IC = 30 mA , LBE2003S; LBE2009S; LCE2009S NPN microwave power transistors Table 2 f (MHz) Scattering , microwave power transistors FEATURES DESCRIPTION · Diffused emitter ballasting resistors The LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal , NPN microwave power transistors LIMITING VALUES In accordance with the Absolute Maximum Rating


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PDF LBE2003S; LBE2009S; LCE2009S LBE2003S LBE2009S OT441A LCE2009S SC15
1998 - power transistors table

Abstract: LBE2003S LBE2009S
Text: specification NPN microwave power transistors Table 1 f (MHz) LBE2003S; LBE2009S Scattering , Semiconductors Product specification NPN microwave power transistors Table 2 f (MHz) LBE2003S , DISCRETE SEMICONDUCTORS DATA SHEET LBE2003S; LBE2009S NPN microwave power transistors , specification NPN microwave power transistors LBE2003S; LBE2009S FEATURES PINNING · Diffused , LBE2003S and LBE2009S are NPN silicon planar epitaxial microwave power transistors in a SOT441A metal


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PDF LBE2003S; LBE2009S LBE2003S LBE2009S SCA57 125108/00/03/pp16 power transistors table
Simple test MOSFET Procedures

Abstract: MOS-Gated Transistors AN-964 curve tracer AN986
Text: Application Note AN-986 ESD Testing of MOS Gated Power Transistors Table of Contents Page 1 , characterization for ESD 4. ESD inspection of incoming devices Unfortunately, MOS-gated power transistors have , of MOS-gated power transistors undergoing an ESD test, without discussing the fundamental premise , -986 TITLE: ESD Testing of MOS Gated Power Transistors Notices: (HEXFET is the trademark for , Gated Power Transistors (HEXFET is the trademark for International Rectifier Power MOSFETs) I


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PDF AN-986 Simple test MOSFET Procedures MOS-Gated Transistors AN-964 curve tracer AN986
2014 - 2EDL23N06

Abstract: trimble R8
Text: including the effects of the power transistors . Table 3 lists various circuit parameters proposed for , consequently damage the power transistors . The use of air coils without any magnetic core is therefore , EiceDRIVER™ Driver IC Evaluation Board EVAL-2EDL23N06PJ Application Note Table of Contents Table of Contents Table of Contents , operation may result to damage of power switches and possibly other circuit components! The board is


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PDF R-0603 R1206 R-0805 0R02/1W T-NPN-BC848A 2EDL23N06PJ 2EDL23N06 trimble R8
2002 - TRANSISTOR SMD CODE PACKAGE SOT23

Abstract: TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
Text: standard package of medium power transistors . Table 4 and Table 5 on page 14 provide a quick comparison of , performance and lower power dissipation than conventional transistors , dice can be build smaller to fit into , maximum collector currents of conventional transistors using the same package. Table 1: Maximum , BISS transistors will have even less saturation voltages. Table 2: Collector-emitter saturation , further comparison of the medium power bipolar transistors BDP31, PBSS4350Z and PBSS4540Z, all SOT223


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PDF AN10116-02 01/W97 OT457 SC-74) OT416 SC-75) OT490 SC-89) OT346 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337 SMD laptop inverter SCHEMATIC TRANSISTOR K 2915 MOSFET schematic diagram of laptop inverter laptop CCFL inverter SCHEMATIC power transistors table smd transistor BC547 datasheet catalog mosfet Transistor smd NPN Transistor smd code LY 83
1993 - a 3101 OPTOCOUPLER

Abstract: ic hp 3101 pin diagram 6 pin pulse transformer 4503 circuit diagram opto-coupler darlington pnp ISOLATION PULSE TRANSFORMER 4503 hcpl 4502 igbt driver 8 pin ic 4562 mosfet hp 4503 opto HP optocoupler 3101 a+3101+OPTOCOUPLER
Text: inverter can also be substituted with power bipolar transistors , Darlingtons, or MOSFETs along with a suitable optically isolated drive circuit. 3. Alternative Methods for Driving Power Transistors Table 1 , 1 H Power Transistor Gate/Base Drive Optocouplers Application Note 1058 Table of Contents , withstand insulation protection between the power and control circuits, LED ON OFF TRUTH TABLE OUTPUT , 2, the control signals trigger the power transistors to produce a high-frequency PWM waveform, which


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PDF HCPL-3000/3100/3101 HCPL-3000, HCPL-3100, HCPL-3101. 5091-6000E a 3101 OPTOCOUPLER ic hp 3101 pin diagram 6 pin pulse transformer 4503 circuit diagram opto-coupler darlington pnp ISOLATION PULSE TRANSFORMER 4503 hcpl 4502 igbt driver 8 pin ic 4562 mosfet hp 4503 opto HP optocoupler 3101 a+3101+OPTOCOUPLER
2011 - NXP SOT1061 Transistors

Abstract: No abstract text available
Text: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , NXP Semiconductors 60 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting , BCP52; BCX52; BC52PA 60 V, 1 A PNP medium power transistors Rev. 9 — 18 October 2011 Product ,  1 ms BCP52; BCX52; BC52PA NXP Semiconductors 60 V, 1 A PNP medium power transistors , Semiconductors 60 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1


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PDF BCP52; BCX52; BC52PA BCP52 OT223 SC-73 BCP55 BCX52 SC-62 O-243 NXP SOT1061 Transistors
2011 - Not Available

Abstract: No abstract text available
Text: BCP68; BC868; BC68PA NXP Semiconductors 20 V, 2 A NPN medium power transistors Table 2 , NXP Semiconductors 20 V, 2 A NPN medium power transistors 5. Limiting values Table 6. Limiting , medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless , BCP68; BC868; BC68PA 20 V, 2 A NPN medium power transistors Rev. 8 — 18 October 2011 Product , of 23 BCP68; BC868; BC68PA NXP Semiconductors 20 V, 2 A NPN medium power transistors 3


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PDF BCP68; BC868; BC68PA BCP68 OT223 SC-73 BCP69 BC868 SC-62 O-243
2011 - Not Available

Abstract: No abstract text available
Text: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , Semiconductors 45 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In , BCP51; BCX51; BC51PA 45 V, 1 A PNP medium power transistors Rev. 9 — 13 October 2011 Product ,  1 ms BCP51; BCX51; BC51PA NXP Semiconductors 45 V, 1 A PNP medium power transistors , Semiconductors 45 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1


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PDF BCP51; BCX51; BC51PA BCP51 OT223 SC-73 BCP54 BCX51 SC-62 O-243
IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 irfc9120 IRFC430 IRFC9230
Text: ." ( 3) International Rectifier Application Note AN-986. "ESD Testing of MOS-Gated Power Transistors , trademark for International Rectifier Power MOSFETs) Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power MOS field effect transistor die feature the same high reliability planar technology used for the , which identifies them as HEXFET III devices (See AN-966 for full details.) Table I lists HEXFET III


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PDF AN-955. AN-986. 0-60V AN-964D IRFC9130 irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 irfc9120 IRFC430 IRFC9230
2011 - Not Available

Abstract: No abstract text available
Text: BCP69; BC869; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors Table 2 , ; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 3. Ordering information Table , ; BC69PA NXP Semiconductors 20 V, 2 A PNP medium power transistors 5. Limiting values Table 6 , medium power transistors 7. Characteristics Table 8. Characteristics Tamb = 25 C unless , BCP69; BC869; BC69PA 20 V, 2 A PNP medium power transistors Rev. 7 — 12 October 2011 Product


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PDF BCP69; BC869; BC69PA BCP69 OT223 SC-73 BCP68 BC869 SC-62 O-243
1993 - hp 4503 opto

Abstract: a 3101 OPTOCOUPLER hp 3101 pin ic hp 3101 pin diagram OPTOCOUPLER hp 2601 6 pin pulse transformer 4503 circuit diagram HP 2601 OPTO ISOLATION PULSE TRANSFORMER 4503 HP optocoupler 3000 hp 3101
Text: . 3. Alternative Methods for Driving Power Transistors Table 1 lists the various techniques that , Modulated Power Inverter. E 3 Table 1. Methods for Driving Power Bipolar Transistors /Darlingtons , 1 H Power Transistor Gate/Base Drive Optocouplers Application Note 1058 Table of , Optocoupler.) In the example shown in Figure 2, the control signals trigger the power transistors to , transistors . In the transformer isolation circuit example shown in Table 1, the turn-off speed is limited


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PDF HCPL-3000/3100/3101 HCPL-3000, HCPL-3100, HCPL-3101. HCPL-3000 HCPL-3100/1, HCPL-7800, 5091-6000E hp 4503 opto a 3101 OPTOCOUPLER hp 3101 pin ic hp 3101 pin diagram OPTOCOUPLER hp 2601 6 pin pulse transformer 4503 circuit diagram HP 2601 OPTO ISOLATION PULSE TRANSFORMER 4503 HP optocoupler 3000 hp 3101
2011 - Not Available

Abstract: No abstract text available
Text: medium power transistors 3. Ordering information Table 4. Ordering information Type number[1 , NXP Semiconductors 80 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting , BCP53; BCX53; BC53PA 80 V, 1 A PNP medium power transistors Rev. 9 — 19 October 2011 Product ,  1 ms BCP53; BCX53; BC53PA NXP Semiconductors 80 V, 1 A PNP medium power transistors , Semiconductors 80 V, 1 A PNP medium power transistors 006aac674 1.5 006aac675 1.5 (1) (1


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PDF BCP53; BCX53; BC53PA BCP53 OT223 SC-73 BCP56 BCX53 SC-62 O-243
2010 - MRF8P9040N

Abstract: MRF1513NT1 s2p rf Amplifier mhz Doherty 470-860 MRF8S21100H MRF8S21100HS MRF8S9220HR3 MRF8S9170NR3 AN1643 MRF6P23190H MRF6VP3450HR6
Text: for automated assembly equipment. Table of Contents Page RF LDMOS Power Transistors . . . . . , Product Selector Guide 11 RF LDMOS Power Transistors (continued) Table 5. Cellular - To 1000 , Product Selector Guide RF LDMOS Power Transistors (continued) Table 8. Cellular - To 2200 MHz - , Guide 13 RF LDMOS Power Transistors (continued) Table 8. Cellular - To 2200 MHz (continued , RF LDMOS Power Transistors (continued) Table 10. L-Band - 960-1400 MHz Frequency Band(37


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MJE520

Abstract: bd189 MJE12007 sc 6038 mj4646 mps-u Je105 BD 433NPNTO-126 mje13006 mj4647
Text: 12E | q b3b725M 00Û441Û Ü | T-91-01 . Bipolar Power Transistors TABLE 1 â , ?5S4 G0Ö4434 T | T -91 -0 TABLE 11 — MILITARY SPECIFIED POWER TRANSISTORS Resistive Switching , Selection By Package Motorola power transistors are available in a wide variety of metal and plastic , Darlington TABLE 10 — DPAK — SURFACE M OUNT POWER PACKAGE STYLE 1: 1. 2. 3. 4. BASE COLLECTOR , / R F 1EE 0 | b3b?254 0ÛÛM435 0 | T -9 1 -0 1 TABLE 11 — MILITARY SPECIFIED POWER


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PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 MJE12007 sc 6038 mj4646 mps-u Je105 BD 433NPNTO-126 mje13006 mj4647
2008 - power transistors table

Abstract: MHW6342TN MW6S010NR1 mrfe6s9060n "RF high power Amplifier" Motorola Microwave power Transistor MRF373 PUSH PULL MRF6P23190HR6 MRF6V2300N MRFG35010R1
Text: 11 RF LDMOS Power Transistors (continued) Table 3. Cellular - To 500 MHz Frequency Band , RF LDMOS Power Transistors (continued) Table 4. Cellular - To 1000 MHz (continued) - , Freescale Semiconductor RF Product Selector Guide RF LDMOS Power Transistors (continued) Table 7 , WiMAX, WiBro, BWA Power Transistors (continued) Table 1. RF WiMAX, WiBro, BWA - To 6000 MHz , Semiconductor RF Product Selector Guide Wideband RF Power Transistors Table 1. Wideband RF Power


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JE1100

Abstract: MFC8030 MFC8040 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 AN294 National Semiconductor Linear Data Book MC4039P
Text: . 20 FIELD-EFFECT TRANSISTORS . 21-24 MICROCIRCUIT COMPONENTS. 25 GERMANIUM POWER TRANSISTORS . 26-29 SILICON POWER TR AN SISTO R S , criteria, and the devices are listed in order of these ratings. For other devices, such as transistors , Power R e ctifie rs. 11 RECTIFIER A S S E M B LIE S , ria c s . 17 Power T hyristors


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2005 - philips power transistor bd139

Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 bd435 smd BD136 SMD TRANSISTOR BD131 smd
Text: saturation voltage as the following example shows: Table 1: BISS transistors dissipate less power , 4 A / 40 V replace - power transistors with 4 ­ 5 A rated collector current. Table 19: - Table , table for replacing (medium) power by BISS transistors original type replacement SOT54 SOT223 , power transistors by low VCEsat (BISS) transistors Table 5: original type leaded replacement , AN10405 Philips Semiconductors Replacing power transistors by low VCEsat (BISS) transistors Table


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PDF AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 bd435 smd BD136 SMD TRANSISTOR BD131 smd
2013 - TL431 SOT323

Abstract: No abstract text available
Text: bipolar transistors with higher power requirements and improved energy efficiency. AN11045 NXP , transistors The major contribution to the power dissipation of a bipolar transistor in a switching , . 7 of 20 AN11045 NXP Semiconductors Next generation of NXP low VCEsat transistors Table 1 , packages. Table 5 and 6 give an overview of available BISS transistors in leadless packages. Table 5 , Semiconductors Next generation of NXP low VCEsat transistors Table 6. PNP low VCEsat BISS transistors in


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PDF AN11045 TL431 SOT323
2005 - SS14 SOD123

Abstract: SS14 DIODE schottky SS14 DIODE dc-dc SS14 DIODE SOD523 footprint SMA-DIODE Silicon Schottky Diode sod123 DC SS14 diode PBSS4350T IC AT MEGA 8
Text: . Table 1: The BISS transistors have a smaller footprint ­ with a 42 % smaller package size ­ while , reduce the power dissipation, transistors with lower VCE0 (e.g. 20 V) can be used, which provide an even , semiconductors 3. BISS transistors in SOT23 package are comparable to medium power transistors With , comparable or sometimes even better characteristics. Table 2: compares the BISS transistors PBSS4350T and PBSS4320T with a medium-power transistor BDP31. Table 2: The much smaller BISS transistors in SOT23


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PDF AN10393 PBSS4240V, PBSS4350T, PBSS4320T, PMEG2010AEJ, PMEG1020EJ, PMEG6010AED, OD323F, OT666 SS14 SOD123 SS14 DIODE schottky SS14 DIODE dc-dc SS14 DIODE SOD523 footprint SMA-DIODE Silicon Schottky Diode sod123 DC SS14 diode PBSS4350T IC AT MEGA 8
1997 - SIPMOS

Abstract: smd transistors list smd transistor equivalent table Small Signal MOSFETs BSP 220 equivalent Transistor comparable types smd transistors
Text: its customers not only avalanchespecified power transistors in SIPMOS technology, but also avalanche-specified small-signal transistors , so that in most cases no special circuitry is needed to limit voltage , shows, the application range of SIPMOS transistors is wider in terms of pulse power dissipation values , identical for power and small-signal transistors . The following procedure is used. The transistor remains , Small Size, High Performance: Switching with Modern SIPMOS Small-Signal Transistors According to


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1996 - smd-transistor DATA BOOK

Abstract: smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD
Text: (on) warm For power and small-signal transistors , there are widely varying definitions of both thermal resistance Rth and temperature gradient T ( Table 2). SMD transistors hen designing power , APPLICATIONS POWER SEMICONDUCTORS Jürgen Gladigau q Otto Voggenreiter Power transistors in SMD packages: Calculating power dissipation the right way More and more power transistors are , is dissipated in power transistors (large overall arrow) via the heat sink, this is done in SMDs via


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PDF O-251 OT-223 smd-transistor DATA BOOK smd transistor book smd transistor fh SIPMOS application note smd transistors SMD BOOK BOOK SMD
1996 - MOSFET TRANSISTOR SMD MARKING CODE nh

Abstract: TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31 smd mosfet sot-363 SMD TRANSISTOR MARKING BF transistor 313 smd smd code marking SOT223 MINI POWER MOSFET
Text: power dissipation of miniaturized components is a decisive design parameter. The mini-packages of the SOT-323, SOT-343 and SOT-363 series listed in Table 1 can be operated with a total power dissipation , Table 3 shows the LF types in the SOT-363 package. It contains dual digital transistors as well as , -23 SOT-363 SOT-363 Table 5 LF transistors with integrated resistors Fig. 4 Chip micrograph of , transistors in SOT-23 package Type BSS 323 BSS 310 n-channel p-channel Table 7 MOS transistors


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2007 - c63716

Abstract: transistor c63716 C637 C-63716 BCX55 BCX52 BCP55 BCP52 BC638 C637-16
Text: 60 V, 1 A NPN medium power transistors 2. Pinning information Table 3. Pinning Pin , Semiconductors 60 V, 1 A NPN medium power transistors 3. Ordering information Table 4. Ordering , power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute , NXP Semiconductors 60 V, 1 A NPN medium power transistors 6. Thermal characteristics Table 7 , 60 V, 1 A NPN medium power transistors 9. Packing information Table 9. Packing methods The


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PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 c63716 transistor c63716 C637 C-63716 BCX55 BCX52 BCP55 BCP52 BC638 C637-16
2007 - c63916

Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 c639 equivalent bc639 nxp
Text: 80 V, 1 A NPN medium power transistors 2. Pinning information Table 3. Pinning Pin , Semiconductors 80 V, 1 A NPN medium power transistors 3. Ordering information Table 4. Ordering , 80 V, 1 A NPN medium power transistors 5. Limiting values Table 6. Limiting values In , 80 V, 1 A NPN medium power transistors 9. Packing information Table 9. Packing methods The , NPN medium power transistors 10. Revision history Table 10. Revision history Document ID


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PDF BC639; BCP56; BCX56 BC639 SC-43A BC640 BCP56 OT223 SC-73 BCP53 c63916 c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 c639 equivalent bc639 nxp
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