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LTC1728HS5-5 Linear Technology IC 3-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5, PLASTIC, SOT-23, 5 PIN, Power Management Circuit
LTC2927ITS8#TRMPBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927ITS8 Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C
LTC2927CTS8#PBF Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: 0°C to 70°C
LTC2927ITS8#TR Linear Technology LTC2927 - Single Power Supply Tracking Controller; Package: SOT; Pins: 8; Temperature Range: -40°C to 85°C

power switching transistor 13009 Datasheets Context Search

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transistor E 13009

Abstract: all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
Text: / 13009 NPN SILICON TRANSISTOR PU (W |. POWER DISSIPATION a so -no iso us ¿or , KSE13008/ 13009 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION · High Speed Switching · Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13008 : KSE13009 Collector Emitter Voltage : KSE13008 : KSE13009 Emitter Base , KSE13008/ 13009 NPN SILICON TRANSISTOR BAS E EM ITTER S ATU R A TIO N V O LTA G E DC CURRENT GAIN


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PDF KSE13008/13009 KSE13008 KSE13009 transistor E 13009 all transistor 13009 transistor d 13009 transistor 13009 e 13009 f transistor EN 13009 13009 TRANSISTOR D 13009 13009 2 transistor 13009
2001 - *E13009F

Abstract: all transistor 13009 tr 13009 transistor 13009 KSE13009FTU p 13009 13009 cross reference 13009 13009 NPN Transistor kse13009 h2
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 O-220F KSE13009FTU *E13009F all transistor 13009 tr 13009 transistor 13009 p 13009 13009 cross reference 13009 13009 NPN Transistor kse13009 h2
2001 - transistor 13009

Abstract: kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009 KSE13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, January 2001 KSE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE13008/ 13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 KSE13009H2 KSE13009H2TU transistor 13009 kse13009 h2 13009 NPN Transistor 13009 power transistor cross reference 13009 transistor switch 13009
2001 - 13009

Abstract: tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3 , KSE13008/ 13009 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC , VOLTAGE Figure 6. Safe Operating Area Rev. A1, January 2001 KSE13008/ 13009 Typical Characteristics (Continued) PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 13009 tr 13009 13009 H transistor 13009 KSE13009 kse13009 h2 all transistor 13009 p 13009 kse13008 transistor d 13009
2000 - e13009

Abstract: Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
Text: KSE13008/ 13009 KSE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3 , cycle2% ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSE13008/ 13009 VBE , . Safe Operating Area Rev. A, February 2000 KSE13008/ 13009 Typical Characteristics (Continued) PC[W], POWER DISSIPATION 120 100 80 60 40 20 0 0 25 50 75 100


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PDF KSE13008/13009 O-220 KSE13008 KSE13009 e13009 Fairchild e13009 transistor E 13009 E13009 F e 13009 f e13008 E-13009 fairchild e13009 application E13009 2 fairchild 13009
2001 - MJE13008

Abstract: 13009
Text: MJE13008/ 13009 MJE13008/ 13009 High Voltage Switch Mode Application · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A1, February 2001 MJE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE13008/ 13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o


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PDF MJE13008/13009 O-220 MJE13008 MJE13009 MJE13008 13009
2001 - mje13008

Abstract: tr 13009 13009 MJE13009 fairchild semiconductor
Text: MJE13008/ 13009 MJE13008/ 13009 High Voltage Switch Mode Applications · High Speed Switching · Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN , . A2, June 2001 MJE13008/ 13009 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION , ©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001 MJE13008/ 13009 Typical Characteristics (Continued) 120 PC[W], POWER DISSIPATION 100 80 60 40 20 0 0 25 50 o


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PDF MJE13008/13009 O-220 MJE13008 MJE13009 mje13008 tr 13009 13009 MJE13009 fairchild semiconductor
2009 - transistor E 13009

Abstract: 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , high switching speed Applications 3 1 2 Switch mode power supplies TO , switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , 3 Test circuit Test circuit Figure 9. Inductive load switching 1) Fast electronic


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PDF ST13009 O-220 transistor E 13009 13009 H p 13009 transistor d 13009 13009 L all transistor 13009 e 13009 l ST13009 E 13009 e 13009 f
2009 - transistor E 13009 l

Abstract: No abstract text available
Text: ST13009 High voltage fast-switching NPN power transistor Features I Low spread of dynamic , Very high switching speed Applications 1 I 2 3 Switch mode power supplies TO , switching speeds and high voltage capability. It uses a hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , 3 Test circuit Test circuit Figure 9. Inductive load switching 1) Fast electronic


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PDF ST13009 O-220 transistor E 13009 l
2007 - transistor E 13009

Abstract: 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
Text: ST13009 High voltage fast-switching NPN power transistor Features Low spread of dynamic , high switching speed Applications 3 1 2 Switch mode power supplies TO , switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching , (1) Package Packaging ST13009 13009 L 13009 H TO-220 Tube 1. Product is , Figure 9. Inductive load switching test circuit 1) Fast electronic switch 2) Non-inductive


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PDF ST13009 O-220 transistor E 13009 13009 H e 13009 f ST13009 ST-13009 13009 l E 13009 L 13009L transistor d 13009 p 13009
transistor E 13009

Abstract: transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
Text: power transistor for S W IT C H M O D E applications are voltage and current ratings, switching speed , power switching inductive circuits where fall time is critical. T h e y are particularly suited for 115 , IN G There are tw o limitations on the power handling ability of a transistor : average junction , switching transistor is subjected to voltages substantially higher than V c c a^ter the device is co m , major portion o f the transistor power dissipation occurs during the fall time (tfj). F o r this reason


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PDF ti3ti725M MJE13008 MJE13009 transistor E 13009 transistor d 13009 n752 E13009 E 13009 E 13009 TRANSISTOR motorola J 13009 - 2 e 13009 p D 13009 K transistor switch 13009
CI 13007

Abstract: bud48 13005 A BUD48A BUX 115 13005 ballast BUV-481 BUD98I MJE-13007 BUV 471
Text: electronic lamp ballasts. The FASTSWITCH technology offers easier driving and faster switching . For use in applications such as transportation or emergency lighting running from low voltage DC the power transistors for DC-DC converters will be suitable. BIPOLAR POWER TRANSISTORS 'C vCBO VCEO ptot Package Type VCE (sat , . 79 GENERAL PURPOSE & INDUSTRIAL SGS-THOMSON [»»[llLItg««! POWER BIPOLAR 700 / 1000 V VCBO , * 12 700 400 100 TO 220 MJE 13009 1.5 8 1.6 1 3 *(1) 0.7* (1) 12 850 400 100 TO 220 MJE 13009 A 1.5 8


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PDF ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUD48A BUX 115 13005 ballast BUV-481 BUD98I MJE-13007 BUV 471
2005 - transistor MJ 13009

Abstract: E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
Text: . : 1/6 MICROELECTRONICS CORP. HMJE13009R 12 Ampere NPN Silicon Power Transistor Description The HMJE13009R is designed for high-voltage, high-speed power switching inductive circuits where fall , Bias SOA with Inductive Loads@TC=100°C · Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C / TC , Emitter Current-Peak IEM 36 Adc Total Power Dissipation@TC=25°C PD 130 Watts TJ , =500mAdc, VCE=10Vdc, f=1MHz) Output Capacitance (VCB=10Vdc, IE=0, f=0.1MHz) · Switching Characteristics


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PDF HR200202 HMJE13009R HMJE13009R O-247 120ns Collector-Emitt120 183oC 217oC 260oC transistor MJ 13009 E13009 j 13009 to247 e 13009 d E 13009 D 13009 K mj 13009 13009 to-3p transistor E 13009 j 13009
2005 - E 13009

Abstract: transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
Text: . : 1/6 MICROELECTRONICS CORP. HMJE13009 12 AMPERE NPN SILICON POWER TRANSISTOR Description The HMJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall , with Inductive Loads@TC=100°C · Inductive Switching Matrix 3 to 12 Amp., 25 and 100°C / TC @8A, 100°C is 120ns(Typ.) · 700V Blocking Capability. · SOA and Switching Applications Information , Watts 800 mW/°C -65 to +150 °C Total Power Dissipation@TA=25°C Derate above 25°C Total


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PDF HE200206 HMJE13009 HMJE13009 O-220AB 120ns 183oC 217oC 260oC E 13009 transistor MJ 13009 transistor E 13009 e13009 mj 13009 transistor d 13009 D 13009 K tr 13009 J 13009 - 2 j 13009
DC power jack SWC

Abstract: SWC DC power jack j 13009 mil-std-1344
Text: M J U b! L F 1-30-09 ECN 51752 TOLERANCE UNLESS OTHERWISE SPECIFIED DECIMALS .XX - .XXX mm MATL , INTERPRETED PER ASME Y 14.5M - 1994 "fL STATION COMPANY CONFIDENTIAL EMERSON. Network Power Connectivity


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PDF
2012 - P13009

Abstract: PL130-09 QFN16L
Text: . Power supply. Reference input signal. The frequency of this signal will be reproduced at the output , V V V mV uA mA 5. LVDS Switching Characteristics PARAMETERS Differential Clock Rise Time , LVDS Transistion Time Waveform OUT 0V (Differential) 50? OUT OUT LVDS Switching Test Circuit , temperature range PART NUMBER PL 130-09 X C PART NUMBER TEMPERATURE C=COMMERCIAL (0°C to 70


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PDF PL130-09 100mV PL130-09 P13009 QFN16L
BP28-12

Abstract: e 13009 f
Text: Charging Procedure For standby power Source For cycle service Charging method Constant , OUTER DIMENSIONS Constant power discharge characteristics at 25 oC/77 oF mm(inch) Terminal T2 , Final Voltage 5Min 10Min 15Min 1Hr 5Hr 3Hr 10Hr 20Hr Battery output power (W , 84.00 57.43 32.08 16.88 9.90V Terminal I1 1012.3 1300.9 856.5 658.8 382.6


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PDF BP28-12 1400mA 50volts) 2660mA 059-C BP28-12 e 13009 f
ic pe 5571

Abstract: pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration on 5295 transistor IC 7449 ic LC 8720 UPA821TF
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES UPA821TF OUTLINE , pF |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB NF Noise Figure , 100 PT Total Power Dissipation 1 Die 2 Die2 mW mW 150 200 TJ Junction , any one of these parameters may result in permanent damage. 2.When operating both devices, the power , CURRENT vs. DC BASE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE VCE = 3 V 200 2


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PDF UPA821TF NE856 UPA821TF UPA821TF-T1 24-Hour ic pe 5571 pe 5571 ic 7483 pin configuration 7402 ic configuration ic 3994 ic 4017 pin configuration on 5295 transistor IC 7449 ic LC 8720
ta 8268 ah

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES · · · LOW NOISE: N F = , MHz Insertion Power Gain at V c e = 3 V , I c =7 mA, f = 1 GHz Noise Figure at V c e = 3 V, Ic = 7 mA , Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die2 , these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. TYPICAL PERFORMANCE CURVES (Ta = 25 c> TOTAL POWER


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PDF UPA821TF UPA821TF-T1 ta 8268 ah
2009 - transistor j 13009-2

Abstract: 13009-2 transistor 13009-2 j 13009-2 ZBSC-8-82-S D 13009 K transistor E 13009 ZBSC-8-82 M1149 e 13009 l
Text: Coaxial Power Splitter/Combiner 8 Way-0° 50 ZBSC-8-82+ 10 to 800 MHz BNC version shown Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input (as a splitter) 1W max. Internal Dissipation 1W max. Permanent damage may occur if any of these limits are exceeded. CASE STYLE: UU1268 Connectors Model Price Qty , Mini-Circuits' website at www.minicircuits.com/MCLStore/terms.jsp. REV. OR M114913 ZBSC-8-82+ ED- 13009 /2


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ 2002/95/EC) M114913 ED-13009/2 transistor j 13009-2 13009-2 transistor 13009-2 j 13009-2 ZBSC-8-82-S D 13009 K transistor E 13009 ZBSC-8-82 M1149 e 13009 l
2004 - 1044-06

Abstract: No abstract text available
Text: . MHz Power Output dBm Tuning Voltage V Phase Noise dBc/Hz SSB at offset frequencies: Typ. 100 1 10 100 , Sensitivity pk-pk dBc Bandwidth MHz/V MHz/V @ 12 dBr kHz Typ. 6.0 Typ. 5.7 Typ. Typ. Max. Typ. 11000.0 Power , GND EXT 1,3,4,5,6,7,8,9,11,12,13,15,16 Tuning Characteristics Power Output Harmonics Suppression MHz/V , 129.17 130.09 3.40 3.15 2.76 2.21 2.97 2.68 2.29 1.75 2.19 1.60 0.76 -0.87 -37.12 -36.84


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PDF ROS-EDR5368 Pu1543 1044-06
2006 - Not Available

Abstract: No abstract text available
Text: Power Splitter/Combiner 8 Way-0° Operating Temperature Storage Temperature Power Input (as a splitter) Internal Dissipation Coaxial ZBSC-8-82+ 50 -55°C to 100°C -55°C to 100°C 1W max. 1W max. 10 to 800 MHz Features · wideband, 10 to 800 MHz · good isolation, 27 dB typ. · good S-port matching VSWR, 1.20 typ. · good output matching VSWR, 1.05 typ. · rugged shielded case CASE STYLE: UU1268 , ACTUAL Data Instantly From MINI-CIRCUITS At: www.minicircuits.com REV. OR M114913 ZBSC-8-82+ ED- 13009


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
2008 - Not Available

Abstract: No abstract text available
Text: Coaxial Power Splitter/Combiner 8 Way-0° Operating Temperature Storage Temperature Power Input (as a splitter) Internal Dissipation ZBSC-8-82+ BNC version shown 50 -55°C to 100°C -55°C to 100°C 1W max. 1W max. 10 to 800 MHz Features · wideband, 10 to 800 MHz · good isolation, 27 dB typ. · good S-port matching VSWR, 1.20 typ. · good output matching VSWR, 1.05 typ. · rugged shielded , : www.minicircuits.com REV. OR M114913 ZBSC-8-82+ ED- 13009 /2 HY/TD/AM 080514 Mini-Circuits


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PDF ZBSC-8-82+ UU1268 ZBSC-8-82-S+ M114913 ED-13009/2
2SC5743

Abstract: 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
Text: 15.5 41 1.0 Pamphlet P14469XJ4V0PF 3 Medium Output Power High Frequency Amplifier , µPC2763TB 13.0@0.9 GHz 8.0@2.4 GHz High Frequency Wideband Amplifier TA = 25, VCC = 3.0 V, ZS = ZL , SAW Pamphlet P14469XJ4V0PF QAM DEMOD. &FEC General Purpose Discrete Transistor Silicon


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PDF PC8190/8191KRX-IF PC8194/8195KRX-IF PG2124TH 10TSSOP 10-pin FAX044435-9608 2SC5743 2SC5600 2SC5533 2SC5693 2SC5678 2sc5744 2SC5937 2SC4091 2sc5747 2SC5599
NEC uPA 63 H

Abstract: NEC uPA 63 E 13009 L transistor d 13009 NEC uPA 63 a CL 2183 ic 4017 ic operation
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA821TF FEATURES · · · LOW , Power Gain at V ce = 3 V, Ic =7 mA, f = 1 GHz Noise Figure at Vce = 3 V, Ic = 7 mA, f = 1 GHz hFE ratio , to Base Voltage Collector Current Total Power Dissipation 1 Die 2 Die2 Junction Tem perature Storage , damage. 2 .W hen operating both devices, the power dissipation for either device should not exceed 110 mW , -122.97 -138.09 -150.60 -161.35 -170.46 -178.60 167.50 150.72 141.52 130.09 114.27 102.28 MAG 6.73 6.15


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PDF UPA821TF NE856 UPA821TF mirrored72 UPA821TF-T1 24-Hour NEC uPA 63 H NEC uPA 63 E 13009 L transistor d 13009 NEC uPA 63 a CL 2183 ic 4017 ic operation
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