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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC4085EDE#PBF Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE#TRPBF Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4085EDE#TR Linear Technology LTC4085 - USB Power Manager with Ideal Diode Controller and Li-Ion Charger; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LT3681EDE#PBF Linear Technology LT3681 - 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LT3681EDE#TRPBF Linear Technology LT3681 - 36V, 2A, 2.8MHz Step-Down Switching Regulator with Integrated Power Schottky Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

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2006 - AN-957

Abstract: circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
Text: ) and is that of a normal PN junction diode . In this circuit LP = Package Inductance Cp = Package , of 0.02 to 2 pF, depending C = Package Capacitance on the diode p = Series Resistance design. The , of these parameters are: c) Effects of Package Parasitics Typical Avago Technologies PIN diode , . All of them are strongly influenced by the lifetime of a PIN diode , as well as the RF power which is applied to the diode . AGILENT OUTLINE 60 AGILENT OUTLINE 83 Figure 5. Package Outlines


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PDF have5771-26 5965-8666E AN-957 circulator s-band datasheet HPND-4165 mini circulator nkt ceramic UHF Phase Shifter AN929 HPND-4005
calculation of IGBT snubber

Abstract: DSEP ISOPLUS247 dt300
Text: , the free-wheeling diode causes high losses during the turn-on transition of the power switch. Power , valid in inverter designs, where the diode and the power switch are parts of a phase leg. So the , waveforms; current commutates from diode to switch over-all power losses. New developments like series , connected diode is the better choice. CALCULATING POWER LOSSES AND JUNCTION TEMPERATURE A rectifier , power switch that is turning off the diode . As can be seen from Fig. 2, the maximum reverse recovery


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1994 - SL 100 NPN Transistor

Abstract: T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright © 1997, Power , Integrated Fast trr Anti-parallel Diode , Enhancing Reliability q Diode trr Typically 500 ns q New Ultra Low-Height SOIC Power Package q Tightly Controlled Transistor Storage Times q Voltage Matched Integrated Transistor and Diode q Characteristics Optimised for Cool Running q , Stability D PACKAGE (TOP VIEW) B 1 8 C NC 2 7 C NC 3 6 C E 4


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PDF BULD25D, BULD25DR, BULD25SL SL 100 NPN Transistor T1 SL 100 NPN Transistor BULD25SL of transistor sl 100 BULD25D BULD25DR SL 100 NPN Transistor base emitter collector VCBo-600V
IXAN0060

Abstract: series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
Text: inductive load, the free-wheeling diode causes high losses during the turn-on transition of the power , waveforms are also valid in inverter designs, where the diode and the power switch are parts of a phase , current and voltage waveforms; current commutates from diode to switch over-all power losses. New , series connected diode is the better choice. CALCULATING POWER LOSSES AND JUNCTION TEMPERATURE A , through the power switch that is turning off the diode . As can be seen from Fig. 2, the maximum reverse


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PDF IXAN0060 IXAN0060 series connection of mosfet ISOPLUS247 calculation of IGBT snubber dt300
2000 - 282P

Abstract: variable power divider HSMS-282K HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
Text: board. Electrical Specifications TC = 25°C, Single Diode [4] Part Package Number Marking Lead HSMS , Schottky Barrier Diode Characteristics Stripped of its package , a Schottky barrier diode chip consists , circuit. In this design, the two 4.7 K resistors and diode D2 act as a variable power divider, assuring , HSMS-282K diode pair, in the six lead SOT-363 package , has a copper bar between the diodes that adds , diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power


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PDF HSMS-282x OT-363 HSMS-282K OT-23/SOT-143 5968-2356E, 5968-5934E 5968-8014E 282P variable power divider HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
D008

Abstract: SL 100 NPN Transistor
Text: BULD25D, BULD25DR, BULD25SL NPN SILICON TRANSISTOR WITH INTEGRATED DIODE Copyright© 1997, Power , High Frequency Electronic Ballasts Integrated Fast trr Anti-parallel Diode , Enhancing Reliability Diode trr Typically 500 ns New Ultra Low-Height SOIC Power Package Tightly Controlled Transistor Storage , INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 MECHANICAL DATA D008 plastic small-outline package , TRANSISTOR WITH INTEGRATED DIODE JULY 1994 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations


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PDF BULD25D, BULD25DR, BULD25SL D008 SL 100 NPN Transistor
1997 - hp pin diode

Abstract: Microwave PIN diode HPND-4165 AN929 HPND-4005 phase shifter circulator hp 3101 pin mini circulator M 4005 G is what type of transistor 30 MHz phase shifters
Text: elements due to the diode and the package . Consequently, when a real diode is used, the attenuation , curves are based on typical values of diode and package parameters. The upper frequency performance can be improved slightly by tailoring the circuit geometry around the diode package . For example, the high package inductance (~ 3 nH) of the glass packaged diode can be reduced in the series circuit by , (dB) ( 2 +2 + INSERTION LOSS (dB) 10 log R'SZo the diode package , as shown in


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PDF HPND-4005 MTT-35, hp pin diode Microwave PIN diode HPND-4165 AN929 HPND-4005 phase shifter circulator hp 3101 pin mini circulator M 4005 G is what type of transistor 30 MHz phase shifters
2003 - variable power divider

Abstract: circuit and working lcr meter 282P diode ring mixer phase detector 282R marking code C4 Sot 23-5 SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143 65 marking sot23
Text: board. Electrical Specifications TC = 25°C, Single Diode [4] Part Package Number Marking Lead HSMS , Schottky Barrier Diode Characteristics Stripped of its package , a Schottky barrier diode chip consists , circuit. In this design, the two 4.7 K resistors and diode D2 act as a variable power divider, assuring , HSMS-282K diode pair, in the six lead SOT-363 package , has a copper bar between the diodes that adds , diode or the gate of a MESFET, is relatively delicate and can be burned out with excessive RF power


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PDF HSMS-282x OT-363 HSMS-282K 5968-8014E 5989-0279EN variable power divider circuit and working lcr meter 282P diode ring mixer phase detector 282R marking code C4 Sot 23-5 SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143 65 marking sot23
1999 - phase shifter circulator

Abstract: HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode
Text: Package Parasitics Typical Agilent PIN diode packages are illustrated in Figure 5. With the exception of , , a real diode contains several reactance elements due to the diode and the package . Consequently , series reflective attenuators. These curves are based on typical values of diode and package parameters , the diode package . For example, the high package inductance (~ 3 nH) of the glass packaged diode , formulas given in Table 1. For L1 and L2 being equal, the resonant frequency in both the diode package


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PDF HPND-4005 MTT-35, 5954-2147E 5965-8666E phase shifter circulator HPND-4005 Microwave PIN diode AN929 HPND-4165 tunnel diode
2004 - bootstrap diode

Abstract: application note gate driver with bootstrap capacitor LM510X MOSFET and parallel Schottky diode CRH01 MURA110T3 BYV40E AN-1317 gate driver Schottky diode
Text: voltage rail. The power dissipation of the gate driver must remain within the package thermal , therefore transient power dissipation in the internal bootstrap diode may be significant and dependent on , be useful for approximating the diode power dissipation. (Continued) tion losses and reverse , reduce power dissipation. The location of the external bootstrap diode should be very close to the gate , outputs of LM510X driver. 20096603 FIGURE 3. Diode Power Dissipation VIN = 40V 20096604


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PDF to12V AN-1317 bootstrap diode application note gate driver with bootstrap capacitor LM510X MOSFET and parallel Schottky diode CRH01 MURA110T3 BYV40E AN-1317 gate driver Schottky diode
1996 - biconvex lens with focal length 1 m and diameter 25.4 mm

Abstract: laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M OPHIR pd200 mitsubishi laser diode collimated LED 670 nm DL3147-011
Text: Sanyo 150mW 830nm Laser Diode - DL 8032-001 - Ø9mm package Ophir PD 200 Optical Power Meter New , Power Meter Laser Diode Close-out List Anamorphic Spherical Tools and Precision X-Y Prisms , .6mm package Mitsubishi 35mW 685nm Laser Diode - ML1012R - Ø5.6mm package Mitsubishi 50mW 785nm Laser Diode - ML64114R - Ø9mm package New Sanyo Laser Diodes Sanyo 20mW 635nm Laser Diode - DL4038-025 - Ø9mm package Laser Diodes, Optics, and Related Components - Optima Sanyo 70mW 785nm Laser Diode


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PDF 658nm ML1016R 685nm ML1012R 785nm ML64114R Revised11JUN99 biconvex lens with focal length 1 m and diameter 25.4 mm laser diode DVD 100mw DL-3147-011 laser diode toshiba 780nm 650nm laser diode 200mw TOLD9225M OPHIR pd200 mitsubishi laser diode collimated LED 670 nm DL3147-011
2001 - HUL7211

Abstract: DVD optical pick-up assembly HUL7212 HULT276 DVD pickup assembly CD laser pickup assembly OPTICAL PICKUP PANASONIC CD DVD player LASER BURN circuit diagram DVD laser pickup assembly Laser Diode for dvd 400 mW
Text: high power laser frame package . A dual wavelength high power laser diode chip is mounted on a small , . .Low power consumption laser diode .Ultra thin package is adopted Focus error Tracking error , High Power Laser Diode (Record for Blu-ray Disc) Package No. Features . . . . 3.8CAN , power consumption laser diode Thin package is adopted Error Signal Detection Method Package No , Under development DVD300 mW, CD300 mW Dual wavelength high power laser diode Mass


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PDF A00035FE HUL7211 DVD optical pick-up assembly HUL7212 HULT276 DVD pickup assembly CD laser pickup assembly OPTICAL PICKUP PANASONIC CD DVD player LASER BURN circuit diagram DVD laser pickup assembly Laser Diode for dvd 400 mW
1998 - HSMS-2860 equivalent

Abstract: HSMS-286 HSMS-286K k 2865 MARKING CODE E6 sot363 marking code e5 sot363 DIODE RF DETECTOR
Text: conductivity for higher power dissipation Package Lead Code Identification (Top View) HIGH ISOLATION , DC Electrical Specifications, T C = +25°C, Single Diode Part Number HSMS285L 285P 286K Package , . Schottky Barrier Diode Characteristics Stripped of its package , a Schottky barrier diode chip consists of a , -2865 reference diode Figure 14. Conventional Differential Detector. In high power differential detectors , HSMS-282K ref. diode 47 dB -25 -15 -5 5 15 INPUT POWER (dBm) Figure 19. Differential Voltage


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PDF OT-363 SC-70, HSMS-285L/P HSMS-286K/L/P/R OT-363 HSMS-286a HSMS-285a HSMS-286K HSMS-286K/L/P/R HSMS-2860 equivalent HSMS-286 k 2865 MARKING CODE E6 sot363 marking code e5 sot363 DIODE RF DETECTOR
2010 - Diode Equivalent BAT62

Abstract: DIODE 0.7v BAT62-L704 schottky diode cross reference SCHOTTKY DIODES CROSS REFERENCE AN185 pn junction diode ideality factor bv42 D168 BAT62
Text: Low Barrier Schottky Diode BAT62 RF Power Detection A pplication Note AN185 Revision: V1 , 21-12-2009 Low Barrier Schottky Diode BAT62 RF Power Detection Confidential List of Tables Table , . 9 Differential peak power detection design consisting of two Schottky diodes (Detector Diode + Reference Diode in one package ­ BAT62-07L4) being used for temperature compensation . 9 Input , AN185 RF Power Detection Confidential 1 Introduction Device: Low Barrier Schottky Diode


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PDF BAT62 AN185 AN185, BAT62: Diode Equivalent BAT62 DIODE 0.7v BAT62-L704 schottky diode cross reference SCHOTTKY DIODES CROSS REFERENCE AN185 pn junction diode ideality factor bv42 D168 BAT62
2006 - 5432-H1

Abstract: TEM00 540016 5431-G1 5411-G1 JDSU laser diode
Text: with JDSU's high-reliability 5400 series single-mode diode lasers. Available in power levels up to , °C/W k 1. Emission bandwidth for 90% integrated power . 2. Not available on C package . 3. Not , component must be employed such that the maximum peak optical power cannot be exceeded. CW diode lasers may be damaged by excessive drive current or switching transients. When using power supplies, the diode , increased slowly while monitoring the diode laser output power and the drive current. Device degradation


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PDF TEM00 5400d 5400DIODELASER 5378-JDSU 5432-H1 540016 5431-G1 5411-G1 JDSU laser diode
Melles Griot 06 DLD 201

Abstract: Melles Griot Laser Diode driver "DLD 201" samsung Laser pickup melles griot 06 dld SLD65018371 SLD65018371 equivalent Melles Griot SLD6501837 low noise, 780nm, 5mw
Text: , DVD-P, DVD-ROM -1- LASER DIODE STRUCTURE -2- LASER DIODE PART NUMBERING SLD 1 650 2 18 2 7 1 X 4 5 6 7 3 1 Samsung Laser Diode 2 Wave Length 3 Package , diode . When you operate LD after occurrence of COD, operating current at a specific power would be much , package reduces an optical output power below an expected level, which requires higher driving current to , LASER DIODE LASER DIODE INTRODUCTION Laser Diode (LD) is a semiconductor device with p-n


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2005 - IC RFID 2.45 GHz

Abstract: HSMS-286B HSMS-286K 915 MHz RFID FR4 epoxy c65 schottky 34 sot-363 rf power amplifier ZZ 6-lead 286l HSMS-286B date code A
Text: Electrical Specifications, TC = +25°C, Single Diode Part Number HSMS- Package Marking Lead , ) Typical Parameters, Single Diode 30 25 20 Input Power = ­30 dBm @ 2.45 GHz Data taken in , Characteristics Stripped of its package , a Schottky barrier diode chip consists of a metal-semiconductor barrier , lead of the diode 's SOT323 package . A shorted shunt stub of length diode case temperature, DC power dissipation and RF power dissipation. Diode Burnout Assembly


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PDF HSMS-286x HSMS286x OT-23/SOT143 higheSOT-323 SC70-3 OT-363 SC70-6 HSMS-286x-TR2G HSMS-286x-TR1G HSMS-286x-BLKG IC RFID 2.45 GHz HSMS-286B HSMS-286K 915 MHz RFID FR4 epoxy c65 schottky 34 sot-363 rf power amplifier ZZ 6-lead 286l HSMS-286B date code A
2009 - 2850KT

Abstract: 2850MT 1200 RTV 2850FT RTV-615 1N6515 1N5550 scotchcast epoxy potting material diode with piv of 40v
Text: thermal impedance of the diode package . Rectifier thermal impedance is the resistance against heat energy , B: Diode Thermal Analysis Reverse Recovery Power Loss Measurement (continued) current multiplied , power dissipated in the diode . The temperature or thermal impedance of the diode will have a major , environment. For oil operation, use the zero lead length power derating curve. Diode Encapsulated in a , . 310 Appendix B: Diode Thermal Analysis Reverse Recovery Power Loss Measurement TABLE 1


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PDF 1N6515 1N5550 2850KT 2850MT 1200 RTV 2850FT RTV-615 1N6515 1N5550 scotchcast epoxy potting material diode with piv of 40v
2006 - 650nm laser diode 200mw

Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW ML7XX46 PD8XX10
Text: High Speed, High Power , High Performance Bitrate to 40 Gbps High Power to 350mW 5 Laser Diode , Wavelength Division Multiplexing 5 Laser Diode for Optical Communication System High power LDs for , 300m 5.6mm CAN package ML9XX10 1.55m 200m 5.6mm CAN package ML776H10 Photo Diode , /5V, with pulse shape control/LPS, 4mmSLP package ML01618 APC : Automatic Power Control LPS , Device Type [ML: Laser Diode PD: Photo Diode ] Wavelength Categories Device Type Package Pin


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PDF 350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW ML7XX46 PD8XX10
820 nm laser diode

Abstract: PULSED LASER DIODE DRIVER CVD-97 CVD-95 CVD-93 CVD-90 CVD-193 CVD-192 CVD-190 CVD-197
Text: , LASER DIODE INC - DRIVING THE LASER V/ 'OS 12E D § 5302105 DQDGq^D 4 | fig 8 +voltage High power , circuit. A typical circuit is shown in Figure 8. Laser Diode , Inc. manufacturers custom drivers and power , trigger - scr \7 laser - DETECTING THE LASER —- Laser Diode , Inc. manufactures a calibrated power , EXPOSURE TO BEAM.' MAX. PEAK POWER 200 WATTS WAVELENGTH 850 nm. "CL<\SS 111b LASER PRODUCT." laser diode , LASER DIODE INC 1EE D | S3ÖSTÖS 0G004Ö7 M | o,ooE CVD- 90 SERIES LASER DIODE , INC. CVD -190


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PDF 0G004Ã 870nm 820 nm laser diode PULSED LASER DIODE DRIVER CVD-97 CVD-95 CVD-93 CVD-90 CVD-193 CVD-192 CVD-190 CVD-197
2005 - AN1124

Abstract: diode Marking code t5 HSMS-286C HSMS-286x Series
Text: , Single Diode Part Number HSMS286B 286C 286E 286F 286K 286L 286P 286R Test Conditions Notes: 1. Package , Characteristics Stripped of its package , a Schottky barrier diode chip consists of a metal-semiconductor barrier , used to mount the lead of the diode 's SOT-323 package . A shorted shunt stub of length power differential detectors, RF coupling from the detector diode to the , simultaneously to obtain the value of junction temperature for given values of diode case temperature, DC power


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PDF HSMS-286x OT-23/ OT-143 OT-323 OT-363 HSMS-286K 5989-0480EN 5989-2495EN HSMS-286x-TR2* AN1124 diode Marking code t5 HSMS-286C HSMS-286x Series
2005 - HSMS-286x Series

Abstract: silicon diode ideality factor HSMS-285X HSMS-2860 K 2865 rf power detector voltage doubler A004R HSMS2860 HSMS286B HSMS-286K
Text: Diode Part Number HSMS- Package Marking Code[1] Lead Code 286B 286C 286E 286F 286K , VOLTAGE DIFFERENCE (mV) Typical Parameters, Single Diode ­30 ­20 ­10 0 10 POWER IN , Characteristics Stripped of its package , a Schottky barrier diode chip consists of a metal-semiconductor , diode 's SOT-323 package . A shorted shunt stub of length POWER = ­30 dBm OUTPUT VOLTAGE (mV) The "Virtual Battery" where T is the diode 's temperature in


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 HSMS-286x. HSMS-286x-TR2G 5989-0480EN 5989-2495EN HSMS-286x Series silicon diode ideality factor HSMS-285X HSMS-2860 K 2865 rf power detector voltage doubler A004R HSMS2860 HSMS286B HSMS-286K
IRF32N50k

Abstract: smd diode UF IRF32N50
Text: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge , SECTION, Diode Bridge Single Phase Product Name Status Description Features Package , Package Q-Level TH / Radial PFC fast diode Product Name Status Description Features Package 15ETX06 UltraFast Diode 600 V, 15 A, 18 nsec Trr 30EPH06 UltraFast Diode 600 V , Features Package IRF32N50K Power MOSFET 500 V, 160 mohm TH / Radial TO-247 IRFPS43N50K


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PDF IRFP32N50K IRFPS40N60K O-247 LPE-3325 IRF32N50k smd diode UF IRF32N50
2002 - AMD a 462 socket pinout

Abstract: AMD 462 socket pinout motherboard temperature sensor alcohol sensor data sheet testing motherboards components using multimeter "fine wire welder" how to check ic on motherboard IC Temperature Sensors 462 motherboard thermocouple to digital interface
Text: Measurement-Processor Package Thermocouple." If a thermal diode is not available, use the die temperature correlations , . Organic Pin Grid Array (OPGA) Processor Package If the OPGA processor package has an on-die thermal diode , thermocouple temperature should increase with increasing power at a similar rate to the diode temperature. If , package temperature. If the difference is large, then be sure that the processor thermal diode is being , with changes in processor power . Be sure that the processor thermal diode is being read and not


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2004 - AN1124

Abstract: HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz HSMS-286x Microwave detector diodes mark code t4 diode SCHOTTKY DIODE SOT-143 diode SMA marking code PB chip diode 047
Text: VOLTAGE DIFFERENCE (mV) Typical Parameters, Single Diode ­30 ­20 ­10 0 10 POWER IN , Characteristics Stripped of its package , a Schottky barrier diode chip consists of a metal-semiconductor , diode 's SOT-323 package . A shorted shunt stub of length POWER = ­30 dBm OUTPUT VOLTAGE (mV) The "Virtual Battery" where T is the diode 's temperature in , junction temperature Ta = diode case temperature jc = thermal resistance Vf If = DC power dissipated


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PDF HSMS-286x OT-23/ OT-143 OT-23/SOT-143 OT-323 OT-363 OT-363 SC70-6 5988-0970EN 5989-0480EN AN1124 HSMS-286x Series METAL DETECTOR circuit for make IC RFID 2.45 GHz Microwave detector diodes mark code t4 diode SCHOTTKY DIODE SOT-143 diode SMA marking code PB chip diode 047
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