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Part Manufacturer Description Datasheet Download Buy Part
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158CS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1160IN Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDIP14, 0.300 INCH, PLASTIC, DIP-14, MOSFET Driver
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IN Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver

power MOSFET IRF740 driver circuit Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - IRF470

Abstract:
Text: Power MOSFET Circuits" Figure 8. Drive circuit and MOSFET with parasitics 2. AN-937B: "Gate Drive Characteristics and Requirements for Power HEXFETs" current and the adverse effects of circuit parasitics so , times. Minimizing inductances at the gate by reducing the distance between driver and MOSFET is , G S Figure 1. Simplified equivalent circuit of a MOSFET with internal capacitances at the gate , power version of circuit shown in Figure 6. Parts cost can be reduced using Low Gate Charge HEXFETs


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PDF AN-944A: AN-937B: IRF470 IR2110 equivalent power MOSFET IRF740 driver circuit IR2110 gate driver for mosfet irf740 equivalent driver circuit for MOSFET IR2110 IR2112 equivalent gate drive circuit for power MOSFET IRF740 irf740 mosfet IRF740LC
Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2011 - Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF740, SiHF740 2002/95/EC O-220AB 11-Mar-11
SEC IRF740

Abstract:
Text: SEMICONDUCTORTM IRF740 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms N-CHANNEL POWER MOSFET , SEMICONDUCTORTM N-CHANNEL POWER MOSFET Fig 1. Output Characteristics IRF740 Fig 2. Transfer , ] FAIRCHILD SEMICONDUCTORTM IRF740 Fig 7. Breakdown Voltage vs. Temperature N-CHANNEL POWER MOSFET , Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower , Leakage Current - N-CHANNEL POWER MOSFET Min. Typ. Max. Units 400 - - - - Test Condition VG


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PDF IRF740 SEC IRF740 power MOSFET IRF740 driver circuit
irf740 application note

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , ?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit , 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 11-Mar-11 irf740 application note IRF740 APPLICATION NOTES power MOSFET IRF740 driver circuit IRF740 IRF740 application SiHF740-E3 IRF740PBF SILICONIX IRF740
2009 - power MOSFET IRF740 driver circuit

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best , -220 package is universally preferred for all commercial-industrial applications at power dissipation levels , its wide acceptance throughout the industry. G S G D COMPLIANT S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF740PbF SiHF740-E3 IRF740 SiHF740 Lead (Pb)-free SnPb


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PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 power MOSFET IRF740 driver circuit IRF740 irf740 mosfet IRF740PBF SiHF740-E3
2012 - IRF740

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF740, SiHF740 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF740
2009 - IRF740PBF

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , Test Circuit Document Number: 91054 S-81291-Rev. A, 16-Jun-08 IRF740 , SiHF740 Vishay Siliconix , DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best , -220 package is universally preferred for all commercial-industrial applications at power dissipation levels , its wide acceptance throughout the industry. G S G D COMPLIANT S N-Channel MOSFET


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PDF IRF740, SiHF740 O-220 O-220 18-Jul-08 IRF740PBF IRF740 irf740 mosfet SiHF740-E3
IRF470

Abstract:
Text: at the gate by reducing the distance between the driver and the MOSFET is essential but hard to , 1 Simplified equivalent circuit of a MOSFET with internal capacitances at the gate. When the drain , bridge built with regular MOSFETs and IR21I0MGD. Figure 7 Low power version of circuit shown in Figure , Factor 2. AN-937B: Gate Drive Requirements FILE' 0_PARAS.Pt_T Figure 8 Drive circuit and MOSFET with , SIMPLIFY GATE DRIVE AND LOWER COST by Läszlo Kirâly Introduction Fast switching of power MOSFETs


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PDF 90245-TEL AN-944A: AN-937B: IRF470 LRF740 IR2110 equivalent IR2110 gate driver for mosfet IRF470 mosfet h bridge irf740 1rf740 IR2112 equivalent gate drive circuit for power MOSFET IRF740 power MOSFET IRF740 driver circuit
2008 - power MOSFET IRF740 driver circuit

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , -Jun-08 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , the industry. G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO


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PDF IRF740, SiHF740 O-220 O-220 12-Mar-07 power MOSFET IRF740 driver circuit
2015 - power MOSFET IRF740 driver circuit

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , www.vishay.com/doc?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + , Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A power MOSFET IRF740 driver circuit
Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , www.vishay.com/doc?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + , Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2013 - Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , www.vishay.com/doc?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + , Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
2014 - Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , www.vishay.com/doc?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + , Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
1999 - irf740 mosfet

Abstract:
Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested , TEST CIRCUIT 4-244 IG(REF) 0 FIGURE 20. GATE CHARGE WAVEFORMS IRF740 All Intersil , . All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors


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PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
1998 - IRF740

Abstract:
Text: ® IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESHTM MOSFET TYPE IRF740 s s s s s , power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process , Characteristics 5/8 IRF740 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive , Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 IRF740 TO , . APPLICATIONS HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM


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PDF IRF740 O-220 O-220 IRF740 irf740n power MOSFET IRF740 irf740 mosfet MOSFET IRF740
1998 - IRF740

Abstract:
Text: IRF740 ® N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESHTM MOSFET TYPE V DSS s s s s s R DS(on) ID 400 V IRF740 < 0.55 10 A TYPICAL RDS(on) = 0.48 , MINIMIZED DESCRIPTION This power MOSFET is designed using the company's consolidated strip layout-based , parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS , or K Identifies Silicon Characterized in this Datasheet October 1998 1/8 IRF740 THERMAL


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PDF IRF740 O-220 IRF740 irf740 mosfet irf740n power MOSFET IRF740 transistor equivalent irf740
F741

Abstract:
Text: SEMICONDUCTOR July 1998 IRF740 , IRF741, IRF742, IRF743 8A and 10A, 350V and 400V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs Features 8A and 10A, 350V and 400V rDS(ON) = 0-55Ì2 and 0.80& Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond Switching Speeds , enhancement mode silicon gate power field effect transistors. These types are advanced power MOSFETs designed , operation. All of these power MOSFETs are designed for applications such as switching regulators, switching


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PDF IRF740, IRF741, IRF742, IRF743 TB334 F741 rf74 power MOSFET IRF740 irf740 mosfet IRF740 ir IRF741 TA17424 gate driver circuit IRF741 IRF740D Transistor IRF743
Not Available

Abstract:
Text: IRF740 , SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 , www.vishay.com/doc?91000 IRF740 , SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + , Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the


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PDF IRF740, SiHF740 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
irf740 spice model

Abstract:
Text: INTERNATIONAL. RECTIFIER lO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF740 IRF74à , Part Number They are well suited for applications such as switching power supplies, motor controls , , ease of paralleling and temperature stability of the electrical parameters. bvdss IRF740 The HEXFET® technology is the key to International Rectifier's advanced line of power M O SFET transistors , that begin with a digit, ie. 2A3B C-293 0839 (0037) 0686 (0027) IRF740 , IRF741, IRF742


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PDF SS452 IRF740 IRF74Ã IRF742 IRF743 T0-220AB IRF741 C-299 irf740 spice model IRF740
2001 - power MOSFET IRF740

Abstract:
Text: IRF740 Data Sheet July 1999 File Number 2311.3 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET , N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed , operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power . They can be operated directly from integrated circuits. Formerly


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PDF IRF740 TA17424 IRF740 power MOSFET IRF740
2006 - irf740

Abstract:
Text: IRF740 N-channel 400V - 0.46 - 10A TO-220 PowerMESHTM II Power MOSFET General features Type IRF740 VDSS (@Tjmax) 400V RDS(on) <0.55 ID 10A 3 1 2 Exceptional dv/dt capability 100 , characteristics 7/12 Test circuit IRF740 3 Test circuit Figure 13. Gate charge test circuit , application Order codes Part number IRF740 Marking IRF740 @ Package TO-220 Packaging Tube August 2006 Rev 4 1/12 www.st.com 12 Contents IRF740 Contents 1 2 Electrical ratings . . . . . . .


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PDF IRF740 O-220 O-220 IRF740 IRF740@ power MOSFET IRF740 irf740 mosfet IRF740 400V 10A irf740 application
2002 - irf740 application note

Abstract:
Text: IRF740 Data Sheet January 2002 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested , . All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power . They can be operated directly from integrated circuits


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PDF IRF740 O-220AB irf740 application note irf740 mosfet irf740 MOSFET IRF740 as switch TA17424 TB334
irf740 mosfet

Abstract:
Text: , power FET, power electronics Mar 14, 2005 APPLICATION NOTE 3465 Simple Power-FET Driver is , transformer-coupled FET driver (a) suits a variety of applications: DC power and load (b); AC power and load (c); and AC power signal and load (d). The driver is simple and physically small because of its tiny package , small transformer. Turn-on and turn-off times for an IRF740 MOSFET are about 2µs, with a propagation delay of 0.5µs. The capacitance between control-circuit ground and the power circuit being controlled


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PDF MAX845) com/an3465 MAX845: AN3465, APP3465, Appnote3465, irf740 mosfet power MOSFET IRF740 driver circuit HIGH FREQUENCY Transformer ee 19 electronic power generator using transistor gate drive circuit for power MOSFET IRF740 EE 19 Switching Transformer AN3465 irf740 application note simple electronic transformer analog isolated Signal Transformer
1999 - SEC IRF740

Abstract:
Text: Circuit & Waveform IRF740 Current Regulator 50k 12V 200nF 300nF Same Type as DUT VGS Qg 10V , ) VDS (t) Time IRF740 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms 1&+$11(/ 32:(5 , .) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.) 1 2 3 IRF740 BVDSS = 400 V RDS(on) = 0.55 ID = 10 A , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation , -Max. 0.93 -62.5 °C/W Units Rev. B ©1999 Fairchild Semiconductor Corporation IRF740


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PDF IRF740 O-220 SEC IRF740
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