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Part Manufacturer Description Datasheet Download Buy Part
POWEREST Texas Instruments Power Estimation Tool (PET)
ICL7667CBA-T Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°
ICL7667CBAZA Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°
ICL7667CBA Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°
ICL7667CBAZA-T Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°
ICL7667CPA Intersil Corporation Dual Power MOSFET Driver; PDIP8, SOIC8; Temp Range: 0° to 70°

power MOSFET IRF640 fp Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp irf640f stmicroelectronics datecode TO-220 0118mm
Text: ® IRF640 IRF640FP N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAY TM MOSFET TYPE , 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company's consolidated strip , . 4 1200 200 60 1560 260 80 Max. Unit S pF pF pF 2/9 IRF640 / FP ELECTRICAL CHARACTERISTICS , TO-220FP 3/9 IRF640 / FP Thermal Impedance for TO-220 Thermal Impedance for TO-220FP Output , IRF640 / FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640F O-220 O-220FP IRF640 P CHANNEL MOSFET IRF640 morocco circuit using irf640 IRF64 power MOSFET IRF640 fp stmicroelectronics datecode TO-220 0118mm
1998 - irf640

Abstract: IRF640FP IRF640 P CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/ FP MESH OVERLAYTM MOSFET TYPE , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , December 1998 1/7 IRF640 / FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl , . Unit S 1560 260 80 pF pF pF IRF640 / FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING , operating area 3/7 IRF640 / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 irf640 IRF640FP IRF640 P CHANNEL MOSFET
1999 - power MOSFET IRF640 fp

Abstract: irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , IRF640 / FP THERMAL DATA TO-220 R thj-case Thermal Resistance Junction-case R thj-amb R thc-sink , 80 pF pF pF IRF640 / FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Typ , for TO-220 Safe Operating Area for TO-220FP 3/9 IRF640 / FP Thermal Impedance for TO


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 power MOSFET IRF640 fp irf640 circuit using irf640 power MOSFET IRF640 IRF640FP for irf640 IRF640 mosfet stmicroelectronics datecode TO-220
1999 - irf640

Abstract: IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A TO-220/TO-220FP MESH OVERLAYTM MOSFET , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , 1/9 IRF640 / FP THERMAL DATA TO-220 R thj -case Thermal Resistance Junction-case R thj , 1560 260 80 pF pF pF IRF640 / FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo , area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 IRF640 / FP


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 irf640 IRF640 P CHANNEL MOSFET IRF P CHANNEL MOSFET TO-220 P Channel Power MOSFET IRF IRF640 morocco IRF640 circuit DI L6 IRF640FP power MOSFET IRF640 fp IRF n CHANNEL MOSFET
1999 - IRF640

Abstract: IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Text: IRF640 IRF640FP ® N - CHANNEL 200V - 0.150 - 18A - TO-220/ FP MESH OVERLAYTM MOSFET TYPE , CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he company , February 1999 1/7 IRF640 / FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl , . Unit S 1560 260 80 pF pF pF IRF640 / FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING , operating area 3/7 IRF640 / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped


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PDF IRF640 IRF640FP O-220/FP IRF640F O-220 IRF640 IRF640FP IRF64 IRF640 P CHANNEL MOSFET IRF640 morocco
Not Available

Abstract: No abstract text available
Text: IRF640 IRF640FP N - CHANNEL 200V - 0.150« - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE , INTRINSIC CAPACITANCES . GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using he , s s , T j < T jm a x 1/9 IRF640 / FP THERMAL DATA TO -220 R e s is ta n c e J u n c tio , o n d u c ta n c e IRF640 / FP ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Sym bol td , -220FP 3/9 IRF640 / FP Thermal Impedance for TO-220 Thermal Impedance forTO-220FP G C 2D 930


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PDF IRF640 IRF640FP O-220/TO-220FP IRF640/FP O-22QFP
2006 - IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , minimized 3 1 3 2 1 TO-220 TO-220FP Description This power MOSFET is designed using , Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1 Electrical


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
2006 - IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Text: IRF640 IRF640FP N-channel 200V - 0.15 - 18A TO-220/TO-220FP Mesh overlayTM Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18 18A IRF640FP 200V <0.18 , minimized 3 1 TO-220 3 2 1 2 TO-220FP Description This power MOSFET is designed , Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Contents IRF640 - IRF640FP Contents 1


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PDF IRF640 IRF640FP O-220/TO-220FP O-220 O-220FP IRF640 IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
RF640

Abstract: irf640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
Text:  IRF640 , IRF641, IRF642, .e-,conductor ¡RF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, juiy 1998 N-Channel Power MOSFETs Features 16A and 18A, 150V and 200V rDS(ON) = 0.18& and 0.22Q. Single Pulse Avalanche Energy Rated SOA is Power Dissipation Limited Nanosecond , BRAND IRF640 TO-220AB IRF640 IRF641 TO-220AB IRF641 IRF642 TO-220AB IRF642 IRF643 TO-220AB IRF643 , silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and


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PDF IRF640, IRF641, IRF642, RF643, RF1S640, RF1S640SM TB334 IRF640 O-220AB IRF640 RF640 IRF640 applications note IRF641 RF1S640SM9A IRF643 RF643 RF1S640 IRF640 circuit TA17422
2008 - irf640

Abstract: hexfet irf640 IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , Requirements · Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low , G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER


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PDF IRF640, SiHF640 O-220 12-Mar-07 irf640 hexfet irf640 IRF640 circuit
2001 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 RF1S640SM TB334
Text: IRF640 , RF1S640SM Data Sheet June 1999 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs Title , · SOA is Power Dissipation Limited · Nanosecond Switching Speed · Linear Transfer Characteristics , Components to PC Boards" Symbol BRAND IRF640 wer OSTs) uthor 1585.5 Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs , of operation. All of these power MOSFETs are designed for applications such as switching regulators


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PDF IRF640, RF1S640SM TA17422. TB334 IRF640 RF1S640SM IRF640 applications note irf640 RF1S640SM9A TA17422 power MOSFET IRF640 RF1S640 TB334
2001 - linear applications of power MOSFET IRF640

Abstract: power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
Text: IRF640 , RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power


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PDF IRF640, RF1S640, RF1S640SM TA17422. linear applications of power MOSFET IRF640 power MOSFET IRF640 for irf640 IRF640 applications note irf640 IRF640 application note IRF640 field-effect power transistor RF1S640SM9A RF1S640SM TA17422
1999 - IRF640 applications note

Abstract: irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
Text: IRF640 , RF1S640SM Data Sheet 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs , of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power . These types can be operated directly from


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PDF IRF640, RF1S640SM TA17422. IRF640 applications note irf640 RF1S640SM9A TB334 TA17422 RF1S640 RF1S640SM IRF640 INTERSIL
1997 - IRF640 applications note

Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
Text: IRF640 , IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description · 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are


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PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A TB334 RF1S640SM IRF643
2009 - IRF640PBF

Abstract: IRF640 SiHF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , MOSFET ORDERING INFORMATION TO-220 IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free , D DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with , cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power , 150 Linear Derating Factor Repetitive Avalanche Energya Maximum Power Dissipation Peak


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PDF IRF640, SiHF640 O-220 O-220 50lectual 18-Jul-08 IRF640PBF IRF640 linear applications of power MOSFET IRF640 irf640 Vishay SiHF640-E3
IRF640 applications note

Abstract: IRF640 circuit
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit
IRFG43

Abstract: motor driver IRF640
Text: Product Summary Part Number bvdss R DS(on) IRF640 200V 0 .1 8 0 18A IRF641 150V , HEXFET® technology is the key to International Rectifier’s advanced line of power M O S FE T , stability of the electrical parameters. They are well suited for applications such as switching power , -2 5 3 !d IRF640 , 1RF641, IRF642, IRF643 Devices HE D | 4flSS4S5 OOaaSQS Q I , Pq @ Tq * 25®C Max. Power Dissipation VGS eAS Single Pulse Avalanche Energy© 'a r A


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PDF IRFS40 IRFG41 IRF642 IRFG43 T0-220AB IRF640 IRF641 IRF643 C-259 IRFG43 motor driver IRF640
2012 - IRF640 applications note

Abstract: IRF640 circuit IRF640 n-channel MOSFET
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF640, SiHF640 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF640 applications note IRF640 circuit IRF640 n-channel MOSFET
IRF640

Abstract: SiHF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 , 2002/95/EC DESCRIPTION D TO-220AB Third generation Power MOSFETs from Vishay provide the , power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the , Avalanche Maximum Power Dissipation TC = 25 °C Soldering Recommendations (Peak Temperature


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 11-Mar-11 IRF640 SiHF640-E3 linear applications of power MOSFET IRF640 IRF640 applications note IRF640 application note
irf640

Abstract: hexfet irf640 power MOSFET IRF640 80 watt
Text: International gjg Rectifier HEXFET® Power MOSFET • Dynamic dv/dt Rating • Repetitive , -9.374G IRF640 Vdss=200V RDS(on) = 0.18Q lD = 18A Description Third Generation HEXFETs from International , applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package , Drain Current, Vgs @ 10 V 11 A I dm Pulsed Drain Current © 72 Pd @ Tc = 25°C Power Dissipation 125 , 215 IRF640 _ Electrical Characteristics @ Tj = 25°C (unless otherwise specified) IOR Parameter


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PDF IRF640 O-220 irf640 hexfet irf640 power MOSFET IRF640 80 watt
MTM13N50E

Abstract: P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
Text: MTP2955 MOTOROLA 40 TMOS POWER MOSFET SELECTOR GUIDE & CROSS REFERENCE Industry Part Number , MTD10N05E1 M TD5N10-1 M TD5N10-1 MTD9N10E1 MTD9N10E1 TMOS POWER MOSFET SELECTOR GUIDE & CROSS REFERENCE , s a re re q u ir e d to m e e t I q (A m p e r e ) ra tin g MOTOROLA 42 TMOS POWER MOSFET , 16P06 SM M 20N50 SM M 20P10 SM M 24N40 SM M 40N20 SM M 70N05 TMOS POWER MOSFET SELECTOR GUIDE & CROSS , Equal O pportunity/Affirm ative Action Employer. MOTOROLA 44 TMOS POWER MOSFET SELECTOR GUIDE &


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
2011 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching , preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The , throughout the industry. TO-220AB G G D S S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 ABSOLUTE MAXIMUM RATINGS (TC = 25


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PDF IRF640, SiHF640 2002/95/EC O-220AB 11-Mar-11
2008 - 200 Amp bridge mosfet

Abstract: circuit using irf640 AD7794 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
Text: Figure 5 uses a control loop to set the gate voltage of a MOSFET ( IRF640 N-channel). The circuit in , voltage MOSFET is used, like the IRF640 , which has a 200 V absolute maximum rating, then this circuit , R2 10 D1 10k Figure 5. Current Sink Using IRF640 MOSFET , 1000 mA C D2 1 , and also medium to high power discrete applications up to the 1 A range. Some ADCs are designed , This is adequate for low power portable applications where sensor power consumption must be low


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PDF AN-968 AD7794/AD7795 AD7794 AN07488-0-10/08 200 Amp bridge mosfet circuit using irf640 AD7795 07488 irf640 Current source IRF640 applications note AN-968 AD8610ARZ
2013 - Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Directive 2002/95/EC DESCRIPTION D TO-220AB Third generation Power MOSFETs from Vishay provide , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Not Available

Abstract: No abstract text available
Text: IRF640 , SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , Directive 2002/95/EC DESCRIPTION D TO-220AB Third generation Power MOSFETs from Vishay provide , commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION TO-220AB IRF640PbF SiHF640-E3 IRF640 SiHF640 Package Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless


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PDF IRF640, SiHF640 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
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