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Part Manufacturer Description Datasheet Download Buy Part
TIL601 Texas Instruments TIL601 N-P-N Planar Silicon Phototransistors
TIL603 Texas Instruments TIL603 N-P-N Planar Silicon Phototransistors
TIL604 Texas Instruments TIL604 N-P-N Planar Silicon Phototransistors
TIP117 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220
HFA3135IH96 Intersil Corporation 2 CHANNEL, UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-6

pnp phototransistor Datasheets Context Search

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pnp phototransistor

Abstract: LASCR zero voltage switching of a tungsten lam
Text: . 8 - Typical pnp phototransistor action of LASCR. B ecause o f its high voltage jun ctio n , Light generated current in phototransistor . T he form ula show s that the sensitivity o f this tran , Phototransistor switching speed. T he high value o f hFE and large collector-base ju n ctio n area required for , - Fig. 5 - Use of phototransistor at very low light levels. T his circuit w ill turn the load on w , ays be less than the phototransistor . D ark current effe c ts, as w ith p hototransistors, are also am


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long range Phototransistor Detector 880nm

Abstract: IR Phototransistor Detector 880nm xenon linear flash lamps varistor xf 030 pnp phototransistor IR LED and photodiode heart rate h11c optocoupler optocoupler with schmitt trigger input SCR optocoupler phototransistor ultraviolet
Text: (ANODE TO GATE REGION CATHODE OPEN) Fig. 39 - Characteristic curves - pnp phototransistor action of , i) are capable o f most efficient coupling. ULTRAVIOLET I S? 1 0 0 o 40 PHOTOTRANSISTOR , phototransistor or photodarlington. The accuracy of this method rests on the conversion efficiency of silicon, a , phototransistor which has an active area of 0.25mm square and peak response around 850nm, this corresponds to , E D and 0.4/iA per mW/cm2 using 2 8 7 0 °K tungsten light. The L14N phototransistor , with 1mm2


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pnp phototransistor

Abstract: transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
Text: A p p l i c at i o n N o t e AN3009 Phototransistor Switching Time Analysis Authors: Van N , silicon phototransistor . Optical isolation sends a beam of infrared energy to an optical receiver in a , addresses the rise and fall time characteristics of a phototransistor used in common circuits, compared to , access pin to the base of the phototransistor , allowing a bias voltage to the base, to improve response , phototransistor . Any external bias configuration must consider noise limitation, as well as not loading


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PDF AN3009 pnp phototransistor transistor Comparison Tables AN3009 transistor 9427 314 optocoupler Common collector configuration basic Transistor 2N4402 digital optocoupler 4pin isolation NPN/transistor NEC K 2500 PS2501-1-A
2001 - 2N3568

Abstract: optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 optocoupler pnp or npn K39 2 GATE optocoupler NPN 2N3638 transistor current booster circuit k 2750 transistor
Text: allowable IF versus maximum ambient temperature. Figure 2. PNP driver VCC 620 Values for Table 1 , . Rb Figure 5. PNP current booster / g Rb Io Since the transistor in the optocoupler is treated as a two-terminal device, no operational difference exists between the NPN and the PNP circuits , rating of the phototransistor is irrelevant since its maximum collector-emitter voltage is the base , Load R1 R1 Q1 Q2 R b2 V­ V­ Figure 8. PNP HV booster Figure 10. PNP Darlington HV


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PDF 2N3568 1-888-Infineon 2N3568 optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 optocoupler pnp or npn K39 2 GATE optocoupler NPN 2N3638 transistor current booster circuit k 2750 transistor
1997 - opto-coupler darlington pnp

Abstract: 2N3568 OPTOCOUPLER HAND BOOK Motorola transistors MJE3055 pnp phototransistor transistor current booster circuit mje3055 data transistor MJE3055 optocoupler pnp or npn optocoupler base resistor
Text: . Figure 2. PNP driver Values for Table 1 are based on a 1.33 mW/°C derate from the 100 mW at 25 , =600 mV/10 ohms=60 mA, so le(Q1)=210 mA. Rb Figure 5. PNP current booster Rb Maximum power in , NPN and the PNP circuits. R b provides a return path for ICBO of the output transistor. Its value is , stand off BVCEO of Q1. The voltage rating of the phototransistor is irrelevant since its maximum , Q2 R b2 V­ V­ Figure 8. PNP HV booster V+ Figure 10. PNP Darlington HV booster V


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opto-coupler darlington pnp

Abstract: 2n3568 mje3055 data 2N3638 transistor transistor MJE3055 transistor current booster circuit Motorola transistors MJE3055 optocoupler pnp or npn pnp phototransistor motorola optocoupler
Text: two such drive circuits. Revision 1.3, 24-Nov-03 17467 Figure 2. PNP driver 6.3 Table 2 , Figure 5. PNP current booster Since the transistor in the optocoupler is treated as a two-terminal device, no operational difference exists between the NPN and the PNP circuits. R b provides a return , rating of the phototransistor is irrelevant since its maximum collector-emitter voltage is the base , Document Number: 83704 Revision 1.3, 24-Nov-03 V­ Figure 8. PNP HV booster Unlike the


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PDF 24-Nov-03 opto-coupler darlington pnp 2n3568 mje3055 data 2N3638 transistor transistor MJE3055 transistor current booster circuit Motorola transistors MJE3055 optocoupler pnp or npn pnp phototransistor motorola optocoupler
2001 - opto-coupler darlington pnp

Abstract: transistor current booster circuit 2N3568 k 2750 transistor 2N3638 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055 transistor MJE3055 2N3638 pnp phototransistor
Text: the 100 mW at 25°C power rating. Table 1. Figure 2. PNP driver VCC 620 T2L Input 1.2 K , , so le(Q1)=210 mA. Rb Figure 5. PNP current booster / g Rb Io Since the transistor in , and the PNP circuits. R b provides a return path for ICBO of the output transistor. Its value is: R b , Q1. The voltage rating of the phototransistor is irrelevant since its maximum collector-emitter , Load R1 R1 Q1 Q2 R b2 V­ V­ Figure 8. PNP HV booster Figure 10. PNP Darlington HV


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PDF 2N3568 opto-coupler darlington pnp transistor current booster circuit 2N3568 k 2750 transistor 2N3638 transistor 12 volt dc operated power led circuit Motorola transistors MJE3055 transistor MJE3055 2N3638 pnp phototransistor
optocoupler based isolated dc to dc converter

Abstract: cny17-3 options pnp phototransistor simple phototransistor optocoupler pnp phototransistor 3 pin ispPAC-POWR1208 NPN Transistor 10A 24V specifications of led and phototransistor AN6046
Text: this circuit, when the ispPAC-POWR1208's output goes LOW, it sinks current from the base of the PNP , output, so that the PNP transistor is now turned ON when the digital output is HIGH. Note that a similar , LED (emitter) and a phototransistor (detector) molded into a single package (Figure 8a) in such a way that the light from the LED is sensed by the phototransistor (Figure 8b). Because there is no electrical connection between the LED and phototransistor , data can be transmitted across potential


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PDF ispPAC-POWR1208 AN6046 -POWR1208 ispPAC-POWR1208 1-800-LATTICE optocoupler based isolated dc to dc converter cny17-3 options pnp phototransistor simple phototransistor optocoupler pnp phototransistor 3 pin NPN Transistor 10A 24V specifications of led and phototransistor AN6046
pnp phototransistor

Abstract: RNI55W
Text: =1mA RL =100n Tf Phototransistor RNI82B PNP Black Plastic Phototransistor A b solution M axim un , Phototransistors 5mm Phototransistor RNI55W W ater Clear Lens A b solution M axlm un Rating (Ta=25°) Coi ector to -E m itte ' breakdown v o lta g e .30V Em itter-to-C ollector breakdown v o lta g e , Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Collect Current Ratio of 2 Phototransistor


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PDF RNI55W 940nm 100uA pnp phototransistor
2001 - 7400 TTL

Abstract: IC TTL 7400 pnp phototransistor 7400 logic gate ic Phototransistor with base emitter IC TTL 7400 propagation delay phototransistor with amplifier 7400 IC series Optocouplers for ttl output transistor 7400
Text: phototransistor mounted together in a DIP package. When forward current (IF) is passed through the Gallium , transmitted through an optical coupling medium and falls on the surface of the NPN phototransistor , positive voltage to the collector of the phototransistor , the device operates as a photo diode. The high , current from the phototransistor (IC or IE), to the input current in the Gallium Arsenide diode is called , Circuits Figure 5. Vcc The output of the phototransistor can directly drive the input of standard


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PDF 17-August-01 7400 TTL IC TTL 7400 pnp phototransistor 7400 logic gate ic Phototransistor with base emitter IC TTL 7400 propagation delay phototransistor with amplifier 7400 IC series Optocouplers for ttl output transistor 7400
2001 - pnp phototransistor

Abstract: 7400 logic gate ic IC TTL 7400 7400 TTL datasheet 7400 TTL TTL 7400 propagation delay in IC TTL 7400 7400 family TTL phototransistor with amplifier us 7400 ic
Text: phototransistor mounted together in a DIP package. When forward current (IF) is passed through the Gallium , transmitted through an optical coupling medium and falls on the surface of the NPN phototransistor , positive voltage to the collector of the phototransistor , the device operates as a photo diode. The high , typical 2 µs rise time for 100 results. The ratio of the output current from the phototransistor (IC or , Sensing Circuits Figure 5. Vcc The output of the phototransistor can directly drive the input of


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PDF 1-888-Infineon pnp phototransistor 7400 logic gate ic IC TTL 7400 7400 TTL datasheet 7400 TTL TTL 7400 propagation delay in IC TTL 7400 7400 family TTL phototransistor with amplifier us 7400 ic
1997 - pnp phototransistor

Abstract: 7400 TTL 7400 logic gate ic IC TTL 7400 information OF ic 7400 phototransistor "linear output" TTL 7400 digital ic 7400 7400 ttl gate phototransistor with amplifier
Text: emitting diode, and a silicon phototransistor mounted together in a DIP package. When forward current (IF , of the NPN phototransistor . Phototransistors are designed to have large base areas, and hence a , emitter, and apply a positive voltage to the collector of the phototransistor , the device operates as a , time for 100 results. The ratio of the output current from the phototransistor (IC or IE), to the , . Vcc 10K The output of the phototransistor can directly drive the input of standard logic circuits


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TIP 121 transistor

Abstract: TIP 41 transistor ir transmitter receiver pnp phototransistor ir water level sensor transistor tip 121 infrared sensor transmitter and receiver circuit IR Sensor transmitter and receiver diode SCR TRANSISTOR free transistor
Text: : Transistor NPN/ PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , E P Type Housing Output status Output type PNP output Type Selection - DC Types , Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break , Specifications Transistor NPN/ PNP Rated operational voltage Rated operational current Continuous Voltage , mounting: ± 2.5 mm 0 - 100 lux 5 Hz VP, unmodulated Specifications (cont.) Transistor NPN/ PNP


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PDF VP01/03: VP02/04: TIP 121 transistor TIP 41 transistor ir transmitter receiver pnp phototransistor ir water level sensor transistor tip 121 infrared sensor transmitter and receiver circuit IR Sensor transmitter and receiver diode SCR TRANSISTOR free transistor
1998 - PHOTOELECTRIC SENSORS

Abstract: CP18SDPSCM photoelectric sensor circuit diagram schematic photoelectric sensor IR LED 940 nm CP18SDNSCM circuit diagram for simple IR receiver MICRO SWITCH Sensing and Control IR switch control CP18D2PNSCM
Text: sensor, PNP , LO/DO, plug-in receptacle type CP18D2PNSCM Diffuse reflective, metal barrel CP18 , , PNP , LO, plug-in receptacle type ACCESSORIES ORDER GUIDE Catalog Listing Swivel type mounting , Operating modes NPN (sinking) or PNP (sourcing) LO/DO LO Response time 1.5 ms Supply , Schematic Diagram Typical Schematic Key 1. Light Source (LED) 2. Receiver ( phototransistor ) 3. Signal , Series WIRING DIAGRAMS Thru-scan Male Receptacle End View Thru-scan DARK OPERATE, Receiver, PNP


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ir transmitter receiver

Abstract: pnp phototransistor VPA2MPA-1 vpa1mna1 VPA2MPA liquid level sensor circuit VPB1MPA VPA1MPA-1 ISO228-1 GLASS BREAK sensor
Text: amplifier Output: NPN or PNP , 4-wire (NO & NC) Housing: Stainless steel or nickel plated brass Tip , . PNP , Make & break switching Cable Ordering no. PNP , Make & break switching M12 Plug , or PNP output. The light source is a Ga-As diode emitting modulated, infrared light in short , internally to the phototransistor placed in the other side of the sensor head (fig. 1), provided that the , Fig. 1 Receiver 4 BK 2 WH 3 BU PNP VP.M.A 1 BN 19 ø14.5 17 2 WH 4 BK 3


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Q3MB-202P

Abstract: TACHOMETER omron 4-20 ma E3A2-DS70M4T Q3MB-202PL Q3M-202PL jae pushbutton A7D-106 h3g omron transistor a2151 dual latching relay ic
Text: optional SCR AC output and NPN or PNP DC output Switch selectable Light-ON/Dark-ON operation Built-in , VDC (G3KD-YR2P-1 optional) Complementary PNP , 200 mA, 30 VDC (G3KD-YR2P-2 optional) 15 ms max. (relay , ) Complementary NPN and PNP , 100 mA, 40 VDC (E3C-WH4F) NPN, 100 mA max., 24 VDC (E3C-JC4P) PNP , 100 mA max., 24 , mA, 30 VDC max. E3S-A 1 . E3S-A 2 . E3S-A 6 . E 3 S - A J7 J PNP transistor, 100 mA, 30 VDC max. E3S-AZ3 J , E3S-A 4T, E3S-AI 87 , E3S-A j 9 - NPN, 50 mA max. E3S-A; .2 ', E3S-A 7 PNP , 50 mA max. E3S-A


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PDF 28-pin 28-pln Q3MB-202P TACHOMETER omron 4-20 ma E3A2-DS70M4T Q3MB-202PL Q3M-202PL jae pushbutton A7D-106 h3g omron transistor a2151 dual latching relay ic
H11A10

Abstract: aaan D41K1 threshold switch H17A1 BRX 70
Text: CURRENT THRESHOLD SWITCH H11A10 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H11A10 is a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a d , °C photo-transistor Power Dissipation ta = 25°C *300 milliwatts Power Dissipation tr = 25°C *500 milliwatts , PHOTO-TRANSISTOR SYMBOL MIN. TYP. MAX. UNITS Forward Voltage (Ip=10mA) vF 1.5 volts Breakdown Voltage (lc , a D41K1 PNP and interchanging the collector and emitter connections, provides an over-current alarm


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PDF H11A10 -7lCI06B aaan D41K1 threshold switch H17A1 BRX 70
1998 - micro switch on-off

Abstract: FE8V-TT2
Text: pulse infrared LED, phototransistor receiver, and amplifier circuitry with solid state output in a , operated, current sinking, (NPN) output FE8V-TB6-M 10 to 28 VDC; dark operated, current sourcing ( PNP ) output FE8V-TD6-M 10 to 28 VDC; light operated, current sourcing ( PNP ) output FE8V-TE6-M 85 , (relay, solenoid, etc.) is directly energized. Sinking (NPN) Sourcing ( PNP ) Honeywell ɀ MICRO


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PDF 18-inch micro switch on-off FE8V-TT2
Not Available

Abstract: No abstract text available
Text: LIGHT +10 to +30 VDC OPERATION WITH REVERSE POLARITY PROTECTION NPN & PNP (CURRENT SINKING , +10 to +30 VDC and are reverse polarity protected. Current sinking NPN and current sourcing PNP Open , : Current Sinking NPN and Current Sourcing PNP Open Collector Transistors; Short Circuit Protected to +30 , load; 1 V max. @ 150 mA max. load PNP VSAT = Less than 1 V @ 10 mA load; less than 2 V @ 150 mA max , amount of reflectivity of the object. This reflected light is sensed by a phototransistor , amplified


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PDF LP0156 MB300000 RT100000 RT200000 201-B, Sector-30 Gurgaon-122002
TIP 41 transistor

Abstract: transistor BU 110 ir water level sensor pnp phototransistor transistor ac 176 VP04EP ir transmitter receiver VP03EP TIP 121 transistor VP01E
Text: : Transistor NPN/ PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , solvents. VP 0 3 E P Type Housing Output status Output type PNP output Type Selection - DC , . Transistor NPN Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break switching Polysulphone Polyamide 12 VP 02 E VP 04 E VP 01 E VP 03 E VP 02 EP , 01-230TB Specifications Transistor NPN/ PNP Rated operational voltage Rated operational current


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PDF VP01/03: VP02/04: VP01E, VP03E VP01EP, VP03EP VP02E, VP04E VP01-. 228/1-G TIP 41 transistor transistor BU 110 ir water level sensor pnp phototransistor transistor ac 176 VP04EP ir transmitter receiver VP03EP TIP 121 transistor VP01E
TIP 41 transistor

Abstract: ir water level sensor transistor BU 110 TIP 110 transistor ir receiver transistor VP03EP VP01E optical sensor with an amplifier VP03E beam break
Text: : Transistor NPN/ PNP or SCR, make or break switching · High chemical resistance to most acids and bases · , E P Type Housing Output status Output type PNP output Type Selection - DC Types , Break switching Ordering no. Transistor PNP Make switching Ordering no. Transistor PNP Break , Specifications Transistor NPN/ PNP Rated operational voltage Rated operational current Continuous Voltage , , unmodulated Specifications (cont.) Transistor NPN/ PNP SCR output AC types IP 67 -20 to +80ºC (-4 to


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PDF VP01/03: VP02/04: VP01E, VP03E VP01EP, VP03EP VP02E, VP04E VP01-. 228/1-G TIP 41 transistor ir water level sensor transistor BU 110 TIP 110 transistor ir receiver transistor VP03EP VP01E optical sensor with an amplifier VP03E beam break
TIP 41 transistor

Abstract: ir transmitter receiver transistor AC Switch free transistor pnp phototransistor PVC Pipe TYPE VP ir water level sensor PT 100 sensor installation VP04E IR Proximity Sensor Switch
Text: amplifier, Ga-As diode Output: Transistor NPN/ PNP or SCR, NO or NC High chemical resistance to most acids , Type Housing Output status Output type PNP output VP 0 3 E P Type Selection - DC Types Housing , switching VP 01 E VP 03 E Ordering no. Transistor PNP Make switching VP 02 EP VP 04 EP Ordering no. Transistor PNP Break switching VP 01 EP VP 03 EP Polysulphone Polyamide 12 Type Selection - AC Types , Polysulphone Specifications Transistor NPN/ PNP Rated operational voltage Rated operational current


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PDF VP01/03: VP02/04: VP01/02 are228/1-G VP01-. VP02-. TIP 41 transistor ir transmitter receiver transistor AC Switch free transistor pnp phototransistor PVC Pipe TYPE VP ir water level sensor PT 100 sensor installation VP04E IR Proximity Sensor Switch
dark detector application ,uses and working

Abstract: coil gold detector circuit diagram sensor cny70 CNY70 74HCTXX BC108B transistor specification TCRT5000 LIGHT DEPENDENT RESISTOR sensor Reflective Optical Sensor TCRT1000 CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC
Text: is the current amplification, S = Ib/r ( phototransistor 's spectral sensitivity), and h = IF/e , the phototransistor . The influence of temperature on the coupling factor is relatively small and , compensation is attributable to the opposing temperature coefficient of the IR diode and the phototransistor , slowest component in the system * in this case the phototransistor . As usual, the threshold frequency , The dependence of the phototransistor collector current on the distance, A, of the reflecting medium


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PDF TCRT1000, TCRT5000, CNY70 74HCT14 B7474 LS393 74HCT74 dark detector application ,uses and working coil gold detector circuit diagram sensor cny70 CNY70 74HCTXX BC108B transistor specification TCRT5000 LIGHT DEPENDENT RESISTOR sensor Reflective Optical Sensor TCRT1000 CIRCUIT DIAGRAM for SPEED DETECTOR USING 555 TIMER IC
Not Available

Abstract: No abstract text available
Text: €¢ • Modulated light Built-in amplifier Output: NPN or PNP , 4-wire (NO & NC) Housing: Stainless , switching M12 Plug Ordering no. PNP , Make & Break switching Cable Ordering no. PNP , Make & Break , probe contains IR transmitter, receiver and amplifier with open collector NPN or PNP output. The light , diode placed in one side of the sensor head, is reflected internally to the phototransistor placed , BU PNP VP.M.A 1 BN 19 ø14.5 17 2 WH 4 BK SW 27 3 BU NPN VP.M.A


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2000 - TCRT5000

Abstract: dark detector application ,uses and working DC motor speed control using IC 555 and ir sensor coil gold detector circuit diagram sensor cny70 CNY70 BC178B angular position sensor 74HCTXX DC motor speed control using 555 and ir sensor
Text: = [(S B)/h] Fr/Fe where B is the current amplification, S = Ib/r ( phototransistor , current amplification, B, of the phototransistor . The influence of temperature on the coupling factor is , and the phototransistor . The maximum speed of a reflection change that is detectable by the sensor , CNY70 are determined by the slowest component in the system in this case the phototransistor . As usual , Diagram The dependence of the phototransistor collector current on the distance, A, of the reflecting


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PDF TCRT1000, TCRT5000, CNY70 74HCT14 LS393 B7474 74HCT74 TCRT5000 dark detector application ,uses and working DC motor speed control using IC 555 and ir sensor coil gold detector circuit diagram sensor cny70 CNY70 BC178B angular position sensor 74HCTXX DC motor speed control using 555 and ir sensor
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