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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

pnp germanium transistor Datasheets Context Search

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pnp germanium transistor

Abstract: No abstract text available
Text: zStmi-Conducko'i ZPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 2N527 ( GERMANIUM ) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS Rating Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol V CB VCEO V EB 'c Storage and Operating Temperature T.tg' TJ Collector Dissipation <* 25Â


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PDF 2N527 pnp germanium transistor
pnp germanium transistor

Abstract: No abstract text available
Text: ^s.mi-t-onau.ato'i U^ioaueti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 2N200 P-N-P GERMANIUM TRANSISTOR Translator Outline TO-1 *ab*olut« maximum ratlngi at M*C free-air temperature (unleu otherwise noted) .240- 25 v Collector-Base Voltage MAX. 25 y Emitter-Base Voltage Collector Current 300 ma Total Device Dissipation at (or below) 25°C 150 mw Operating Collector Junction Temperature . 85°C .4KT


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PDF 2N200 pnp germanium transistor
pnp germanium transistor

Abstract: No abstract text available
Text: ^s-mi-donduatoi , fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.S.A. -526 GERMANIUM ) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS Symbol Rating Collector -Base Voltage Valu« 45 Vdc 30 Vdc IS Vdc 500 mAdc -85 to *100 °C 225 mW 0.333 °C/mW 0.15 °C/mW VCB Collector -Emitter Voltage V CEO


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2N599 JAN

Abstract: 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
Text: (See 6.2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , TYPE 2N599 1. SCOPE 1.1 Description,- This specification covers the detailed requirements for a PNP germanium transistor and is in , quality conformance inspection information pertinent to the transistor Inspection lot shall be furnished by the transistor supplier and shall accompany each transistor shipment from the inspection lot to , .Base Lead 3.Collector Figure 1 - Outline dimensions of transistor type 2N599. (D F -o


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PDF MIL-S-19500/166C 19500/166B 2N599 MIL-S-19500, 2N599. M3L-S-19500/166C SH70ST 2N599 JAN 2N599 N468 MIL-S-19491 Y2 TRANSISTOR CONFORMANCE pnp germanium transistor
2N1195

Abstract: pnp germanium transistor TRANSISTOR SUBSTITUTION
Text: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , LOW-POWER TYPE 2N1195 This specification is , specification covers the detail requirements for a low-power. PNP , germanium , transistor . 1.2 Physical , . Transistor shall be of the design, construction, and physical dimensions shown on figure 1. 3. 3.1 Lead , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , (1.37+.03,-.00 mm) below the seating plane of the transistor max dia leads shall be within ,007 (.18 mm) of


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PDF MIL-S-19500/71D MIL-S-19500/71C 2N1195 MIL-S-19500 MIL-S-19500/71C. 2N1195 pnp germanium transistor TRANSISTOR SUBSTITUTION
2N1358

Abstract: pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
Text: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , HIGH-POWER TYPE 2N1358 This specification is , specification covers the detail requirements for a high-power, PNP , germanium transistor . 1.2 Physical , Design, construction, and physical dimensions. Transistor shall be of the design, construction, and , -19500 may be omitted from the body of the transistor at the option of the manufacturer: (a) Country of , gage for transistor type 2N1358« 4 MIL-S-19500/122C * 4.3.4 Group B and group C life-test samples


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PDF MIL-S-19500/122C MIL-S-19500/122B 2N1358 MIL-S-19500/122C 2N1358 pnp germanium transistor MIL-S-19500 Germanium Transistor FY 3011
pnp germanium transistor

Abstract: boonton 91-6c
Text: MIL-S-19500/77C 6 March 1968 SUPERSEDING MIL-T- 19500/77B 5 July 1961 (See 6. 3. ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , LOW-POWER This specification is mandatory for , specification covers the detail requirements for a low-power, PNP , germanium , transistor . * 1. 2 Physical , following marking specified in MIL-S-19500 may be omitted from the body of the transistor at the option of , RFVM to 'Sample' jack. G. Insert transistor into socket, apply bias, and set 10 Mllz level for a 1.59


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PDF MIL-S-19500/77C 19500/77B pnp germanium transistor boonton 91-6c
K 2056 transistor

Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Text: ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , LOW-POWER TYPE 2N331 This , Scope. This specification covers the detail requirements for an audio-frequency, PNP , germanium transistor . 1.2 Physical dimensions. See figure 1 (TO - 5). * 1.3 Maximum ratings. Pel/ TA = 25° c VCBO , specified in MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer , 1. Physical dimensions of transistor t ype 2N331 (TO-5), 6 MTT_Q_1 QZOTl// n ruti-v GAGE


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PDF -19500/4D MIL-S-19500/4C 2N331 2N331. K 2056 transistor pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
OC 74 germanium transistor

Abstract: OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
Text: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , LOW-POWER TYPE 2N39GA This specification 1b , specification covers the detail requirements for a low-power, PNP , germanium , transistor . 1.2 Physical , MIL-S-1950P. 3.3 Design, construction, and physical dimensions. Transistor shall be of the design , MIL-S-Î95ÔÔ may be omitted from the body of the transistor at the option of the manufacturer: (a , the seating piane of the transistor max dia ieads shaii be within ,007 (.18 mm) of their true iocotion


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PDF MEL-S-19500/64D MIL-S-19500/64C 2N39GA -i-100 MIL-S-19500 MIL-S-19500/64C. OC 74 germanium transistor OC 140 germanium transistor pnp germanium transistor UJ33 2N396A Germanium Transistor kc 2026 TRANSISTOR SUBSTITUTION MIL-S-1950P
MC 151 pnp

Abstract: 2N1142 MC 3041 MC 151 transistor MC 140 transistor Germanium Transistor VHF power TRANSISTOR PNP TO-39 pnp germanium transistor
Text: ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR , PNF GERMANIUM , LOW POWER TYPE 2N1142 This spà , Scope. This specification covers the detail requirements for a low-power, high-frequency, PNP , germanium transistor . 1. 2 Physical dimensions. See figure 1 (modified TO-39). 1. 3 Ratings. See table I. TABLE I , -19500. 3= 3 Design; construction. and physical dimensions. - Transistor shall be of the design , MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a


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PDF MIL-S-19500/87A MIL-S-19500/87 2N1142 2N1142. MLL-S-19500/87A MC 151 pnp 2N1142 MC 3041 MC 151 transistor MC 140 transistor Germanium Transistor VHF power TRANSISTOR PNP TO-39 pnp germanium transistor
2002 - NSL5027

Abstract: transistor LM340 LM340 voltage regulator LM340 AN-103 national 12V 10A voltage regulators NPN Transistor 10A 24V LM320 voltage regulator Lm324 comparator datasheet dual tracking voltage regulator ic 10A
Text: 00741316 *Solid tantalum * Germanium diode (using a PNP germanium transistor with the collector shorted , less than 5.0A, the R2/R1 ratio can be set lower than 4:1. Therefore, a less expensive PNP transistor , transistor with a lower power PNP device to replace the single, higher cost, power PNP shown in Figure 6 , Circuit Current Limit The 15V regulator circuit of Figure 6 includes an external boost transistor to , components. The extension of these safety features to the external pass transistor Q1 is based on a current


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PDF LM340-XX LM340 AN-103 NSL5027 transistor LM340 LM340 voltage regulator AN-103 national 12V 10A voltage regulators NPN Transistor 10A 24V LM320 voltage regulator Lm324 comparator datasheet dual tracking voltage regulator ic 10A
1995 - IC 7413

Abstract: NSL5027 equivalent Z340 LM340-XX TTL 74137 LM324 DIL transistor LM320K-15 NSL5027 transistor 7413 Germanium power diode
Text: tantalum Germanium diode (using a PNP germanium transistor with the collector shorted to the emitter , uses a relatively inexpensive NPN pass transistor with a lower power PNP device to replace the single , regulator circuit of Figure 6 includes an external boost transistor to increase output current capability , of these safety features to the external pass transistor Q1 is based on a current sharing scheme , in the pass transistor or 10A total TL H 7413 ­ 8 FIGURE 8 Continuous Short Circuit Current vs


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PDF LM340 LM340-XX IC 7413 NSL5027 equivalent Z340 TTL 74137 LM324 DIL transistor LM320K-15 NSL5027 transistor 7413 Germanium power diode
OC 74 germanium transistor

Abstract: 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
Text: SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR , PNP , GERMANIUM , SWITCHING TYPE 2N1500 This specification is , specification covers the detail requirements for a high-speed switching, PNP , germanium transistor . 1.2 , , construction, and physical dimensions. The transistor shall be of the design, construction, and physical , omitted from the body of the transistor at the option of the manufacturer: (a) Country of origin. (b , in a gaging plane .054+.001, -.000 (1.37+.03,%Q0 mm) below the seating plane of the transistor max


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PDF MIL-S-19500/125C -S-19500/125B 2N1500 OC 74 germanium transistor 2N1500 pnp germanium transistor NEW JERSEY SEMICONDUCTOR uz
transistor K52

Abstract: germanium transistor pnp pnp germanium transistor GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS mazda 3 germanium Power Transistor
Text: XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type E D I S W A N MAZDA TENTATIVE GENERAL The XCIOI is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element , TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ CHARACTERISTICS (at 25°C.). Small Signal Values (average , I S W A N MAZDA XCIOI AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL , OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE Mean Total Base Current at Maximum Power Output


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TRANSISTOR 3F z

Abstract: germanium transistor pnp crt 1700 OC 44 germanium transistor pnp germanium transistor mazda 3 TRANSISTOR C-111 Germanium Transistor Germanium power Germanium Amplifier
Text: E D I S W A N MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XAIOI , . TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS 0.295" Max. 0.285"Min . HH 1 1.2 , XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient , SWAN LIMITED MAZDA XAIOI I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES


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germanium transistor pnp

Abstract: Germanium germanium pnp XAI02 pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
Text: E D I S W A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE_ GENERAL The , A N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE Static Current , XAI02 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS AND CONNECTIONS ■0.5  , N \tr MAZDA XAI02 V R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE TYPICAL CIRCUIT , MAZDA XAI02 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter


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PDF XAI02 germanium transistor pnp Germanium germanium pnp pnp germanium transistor germanium pnp transistor siemens crt EDISON transistor germanium
ci 740

Abstract: ci740 germanium transistor pnp XBI03 Lf transistor germanium Power Transistor power germanium transistor pnp transistor lf common collector PNP Germanium power
Text: E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type _TENTATIVE GENERAL The XBI03 is a germanium pnp junction type transistor suitable for use as an L.F. Amplifier The element of the , SWAN LIMITED E D I S W A N MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , SIEMENS EDISON SWAN LIMITED MAZDA XBI03 L.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE , . TRANSISTOR Germanium PNP Junction Type TENTATIVE CHARACTERISTIC CURVES Common Emitter Circuit Ambient


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PDF XBI03 ci 740 ci740 germanium transistor pnp Lf transistor germanium Power Transistor power germanium transistor pnp transistor lf common collector PNP Germanium power
pnp germanium transistor

Abstract: germanium transistors PNP Germanium Transistors
Text: germanium transistors Reverse leakage from 0.1mA to 9mA PNP and NPN transistors FET’s NPN or PNP , METER SCALES GOOD NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s Readable from 0.1µA to 9mA for Ice leakage, calibrated for silicon and germanium power and signal transistor leakage limits Does not apply NPN or PNP Ge or Si , Base or Gate for good transistor or FET’s , 520C Specifications Model 520C Industrial Transistor Tester IN-CIRCUIT TEST The B+K


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free transistor

Abstract: germanium transistor pnp MC 150 transistor small signal germanium transistor transistor siemens ss S parameters of RF transistor Germanium Transistor equivalent transistor rf pnp transistor oscillator circuit XAI04
Text: E D I S W A N MAZDA XAI04 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE GENERAL The XAI04 is a pnp junction type transistor suitable for use as a frequency changer and or oscillator on the , . TRANSISTOR Germanium PNP Junction Type TENTATIVE COMMON EMITTER EQUIVALENT tt NETWORK Small Signal Values at , SWAN LIMITED E D I S W A N MAZDA XAI04 R.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , of the transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 45°C. Ambient


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PDF XAI04 XAI02 free transistor germanium transistor pnp MC 150 transistor small signal germanium transistor transistor siemens ss S parameters of RF transistor Germanium Transistor equivalent transistor rf pnp transistor oscillator circuit
free transistor

Abstract: common base amplifier circuit MC 150 transistor transistor free transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR Germanium Transistor if TRANSISTOR
Text: SWAN LIMITED E D I S W A N MAZDA XAI03 I.F. TRANSISTOR Germanium PNP Junction Type TENTATIVE DIMENSIONS , E D I S W A N MAZDA XAI03 I.F. TRANSISTOR Germanium PNPJunction Type TENTATIVE GENERAL The XAI03 is a pnp junction type transistor suitable for use as an I.F. Amplifier at frequencies between 250 and , Germanium PNP Junction Type TENTATIVE COMMON EMITTER EQUIVALENT tt NETWORK Small Signal Values at Vc=â , transistor is hermetically sealed in a small can. RATINGS—Absolute Values for 45°C. Ambient (Maximum


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PDF XAI03 free transistor common base amplifier circuit MC 150 transistor transistor free transistor Common Base amplifier "MC 150" transistor germanium transistor pnp S PARAMETERS FOR TRANSISTOR Germanium Transistor if TRANSISTOR
2N1046

Abstract: germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Text: TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR HIGH-FREQUENCY POWER TRANSISTOR FOR , DALLAS. TEXAS 73222 6-37 TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR TYPICAL , 75222 TYP! 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM POWER TRANSISTOR THERMAL CHARACTERISTICS CASE , E B O X S012 O A L L A S . T E X A S 752 2 2 6-35 TYPE 2N1046 P-N-P ALLOY-DIFFUSED GERMANIUM , GERMANIUM POWER TRANSISTOR TYPICAL CHARACTERISTICS COMMON-EMITTER COLLECTOR CHARACTERISTICS


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PDF 2N1046 DC-11 germanium power transistor diode germanium tu 38 f Germanium Transistor Texas Germanium 639 TRANSISTOR PNP Germanium power diode germanium tu 38 e
Not Available

Abstract: No abstract text available
Text: su ^£.mi-dond\jictoi Lptoauoli, Una. LS 2N458A 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 PNP GERMANIUM POWER TRANSISTOR JEDEC TO-3 CASE 2N458A type is a PNP Germanium Alloy Junction Power Transistor manufacture in a hermetically sealed metal case, designed for high voltage amplifier and switching circuits. MAXIMUM RATINGS (TC = 25°C) SYMBOL Collector-Base Voltage UNITS 80 V CEO Emitter-Base Voltage


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PDF 2N458A 2N458A
NKT677

Abstract: NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
Text: direction. 8 -1 8m V /degC AC113 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver Yellow , ) GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF Output Yellow Sleeve Line on sleeve indicates , deg C /m W 11 3 = — 1mA, AC 128 GERMANIUM ALLOY TRANSISTOR p-n-p Class A or Class B , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , impedance 50011 14 AC 156 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver b W hite


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 AD149 NKT275 1/equivalent transistor ac127 ORP12 GEX34 sft353 OC171 equivalent ac128
ua78540

Abstract: MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor scr dc motor forward reverse control tl494 equivalent application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
Text: FET Ql to supply the negative going base drive to PNP transistor Q2. Diode D1 provides off-bias to , SCR VTM CVTM of an SCR is the sum of VcE(sat) 811(1 VRECsat) of the two transistor equivalent circuit). For an NrN clamp transistor , the emitter can either be tied directly to the SCR cathode or to a , comparably sized transistor . And, the peak surge current ratings (1/2 cycle sine wave) can be perhaps ten , cart controller is shown in Figure 1. Germanium power transistors were used by the authors because of


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PDF EB121/D EB121 ua78540 MOTOROLA SCR TL494 PWM motor controller TL494 PWM motor scr dc motor forward reverse control tl494 equivalent application SCR scr driving circuit for dc motor MOTOROLA SCR driver EB121
transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor af280 1557 b transistor Q62701-F88 900 mhz germanium diode AF 280 S
Text: 25C D ■fl235bQS 0DQ4Q81 5 ■SIEG PNP Germanium UHF Transistor AF 280 S - SIEMENS AKTIENGESELLSCHAF - for mixer and oscillator circuits up to 900 MHz AF 280 S is a germanium PNP UHF planar transistor with passivated surface in low-capacitance 50 B 3 DIN 41867 plastic package similar to T0119. This transistor is particularly intended for use in mixer and oscillator circuits up to 900 MHz in diode tuned tuners. Type Ordering code AF 280 S Q62701-F88 25m nsxO.tôinm 1 Approx. weight 0.25 g Dimensions in


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PDF fl235bQS 0DQ4Q81 T0119. Q62701-F88 transistor d 1557 transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor af280 1557 b transistor Q62701-F88 900 mhz germanium diode AF 280 S
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