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LT1025ACJ8 Linear Technology T.C. COLD JUNCTION COMPENSATOR
LT1025CS8#TRPBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CS8#PBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CN8#PBF Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CN8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1025CS8 Linear Technology LT1025 - Micropower Thermocouple Cold Junction Compensator; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

pn junction diodes Datasheets Context Search

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2007 - curve tracer cost

Abstract: "white led" curve AN-1656 pn junction diodes power supply driver led InGaN 12V
Text: . LEDs are PN junction diodes , and their dynamic resistance shifts as their forward current changes , (Figure 4). This problem is compounded by the negative temperature coefficient of LEDs (and all PN junction diodes ). The LEDs that draw the most current suffer the greatest increase in die temperature. As


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PDF AN-1656 curve tracer cost "white led" curve AN-1656 pn junction diodes power supply driver led InGaN 12V
Not Available

Abstract: No abstract text available
Text: inputs incorporate a resistor/diode gate protection network. Inherent p-n junction diodes provide diode


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PDF SMP-04 SMP-04 Absoiute/12-Bit 25mV/mS) 16-PIN
Not Available

Abstract: No abstract text available
Text: a resistor/diode gate protection network. Inherent p-n junction diodes provide diode protection


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PDF SMP-04 SMP-04 16-PIN Absolute/12-Bit 25mV/mS) 500pF
1998 - STMicroelectronics schottky rectifier marking code

Abstract: TMBYV10-40 TMBYV10-40FILM MELF DIODE MARKING CODE Schottky melf 0205B
Text: carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus


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1994 - Not Available

Abstract: No abstract text available
Text: reverse recovery is not affected by storage charge as in conventional PN junction diodes . Nevertheless , TMBYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Repetitive Peak Reverse Voltage °C °C 260 Storage and Junction Temperature Range °C BYV , the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current versus forward voltage , (typical values). 2/4 TMBYV 10-20 40 Figure 3. Reverse current versus junction temperature


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1994 - Not Available

Abstract: No abstract text available
Text: conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to , TMBYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Junction Temperature Range Maximum Lead Temperature for Soldering during 15s Value 1 25 Sinusoïdal Pulse 50 , variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current , at high level (typical values). 2/4 TMBYV 10-20 40 Figure 3. Reverse current versus junction


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PDF 10-2nder
2009 - SURFACE MOUNT DIODES MIL GRADE

Abstract: Schottky diode Die flip chip IEC-61249-2-21 adaptive cruise control radar RF Microwave schottky Diode mixer PN junction diode in mil grade DMK2790-000 DMK2308-000 BRO373-09A APN3001
Text: there is in p-n junction diodes . This characteristic allows Schottky diodes to switch from conduction , otherwise equivalent p-n junction diode. This permits Schottky diodes to detect lower amplitude signals than a p-n junction . Skyworks GreenTM products are RoHS (Restriction of Hazardous Substances , chip Schottky diodes , DMK2790-000 single junction and DMK2308-000 antiparallel pair, offer all the , environmental requirements for MIC & hybrid applications · Designed for low junction capacitance and low


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PDF BRO373-09A SURFACE MOUNT DIODES MIL GRADE Schottky diode Die flip chip IEC-61249-2-21 adaptive cruise control radar RF Microwave schottky Diode mixer PN junction diode in mil grade DMK2790-000 DMK2308-000 BRO373-09A APN3001
1999 - byv 65

Abstract: No abstract text available
Text: in conventional PN junction diodes . Nevertheless, when the device switches from forward biased , BYV 10- 40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig.1 : Forward , voltage at high level (typical values). 2/4 BYV 10-40 Fig.3 : Reverse current versus junction


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1999 - melf diode marking code

Abstract: TMBYV10-40
Text: carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus


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1998 - Not Available

Abstract: No abstract text available
Text: in conventional PN junction diodes . Nevertheless, when the device switches from forward biased , BYV 10- 40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes , Storage and Junction Temperature Range TL Maximum Lead Temperature for Soldering during 10s at 4mm , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig.1 : Forward , voltage at high level (typical values). 2/4 BYV 10-40 Fig.3 : Reverse current versus junction


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1999 - TMBYV10-40

Abstract: No abstract text available
Text: carrier conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to reverse blocking state , TMBYV 10-40 ® SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifierdiodes , 50 Rectangular Pulse IFSM Tstg Tj TL Storage and Junction Temperature Range Maximum , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Fig. 1 : Forward current versus


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1997 - HTRB

Abstract: ACOL burn-in
Text: compared to operating other conventional pn junction design rectifiers. This includes HTRB test methods that may optionally be performed for screening purposes. For conventional pn junction rectifiers HTRB is often performed at 150oC. However, these pn junction diodes have comparatively low reverse , pn junction devices, particularly as maximum rated TJ is approached for low energy barrier metal , as junction temperature (TJ) approaches maximum rating (TJ(MAX) for their barrier metal design


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PDF 150oC. HTRB ACOL burn-in
VR-60

Abstract: VR-61 Silicon Varistors VR60
Text: silicon p-n junction diodes connected in reverse parallel, and have excellent voltage-current , characteristics. Silicon Table 1 Silicon Varistor Rated Characteristics 2. Silicon Avalanche Diodes SRT~4, SRB1-4, SRF1-4 Avalanche diodes of SR type have been designed specifically for use in telephone exchanges. Owing to a special surface treatment, the p-n junction surface is highly stable. As a result, the ,  DIODES FOR TELEPHONES AND TELEPHONE EXCHANGES 7. Silicon Varistors VR-60 and VR-61 2 Silicon


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PDF VR-60 VR-61 750mA Silicon Varistors VR60
1994 - Not Available

Abstract: No abstract text available
Text: charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased , Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 15s , with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). 2/5 TMBYV , junction temperature. Figure 4. Reverse current versus VRRM in per cent. 3/5 TMBYV 10-60 Figure


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1999 - Not Available

Abstract: No abstract text available
Text: in conventional PN junction diodes . Nevertheless, when the device switches from forward biased , tp = 300µs 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL , diode in parallel with a variable capacitance equal to the junction capacitance (see fig. 5 page 4/4). , current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 3/5


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1999 - melf diode marking

Abstract: No abstract text available
Text: conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature


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1999 - 0205B

Abstract: marking 5 melf -diode glass
Text: conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature


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varistor 222

Abstract: 1S2359 VR-60 VR-61 varistor sr SRB4 diode VR60 SV1 3100
Text: -61 have been developped mainly for noise absorption of telephones. They consist of silicon p-n junction diodes connected in reverse parallel, and have excellent voltage-current characteristics, over-current , surface treatment, the p-n junction surface is highly stable. As a result, the products have very large , :0.4[g) Fig.8 '■mJ -22min oo O /— 11.5'max "O 4 Ow Weight :0.75[gJ DIODES FOR TELEPHONES , Silicon Varistor Rated Characteristics 2. Silicon Avalanche Diodes SRT~4, SRB1-4, SRF1-4 Avalanche


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PDF 50/iA) 100mA 50//A) VR-60 VR-61 1S2359 11S2359 varistor 222 1S2359 varistor sr SRB4 diode VR60 SV1 3100
1994 - melf diode marking

Abstract: marking 5 melf -diode glass RECTIFIER DIODES SGS marking 5 melf -diode DIODE melf 3a
Text: conduction. So reverse recovery is not affected by storage charge as in conventional PN junction diodes , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , capacitance equal to the junction capacitance (see fig. 5 page 4/4). TMBYV 10-60 Figure 1. Forward , voltage at high level (typical values). Figure 3. Reverse current versus junction temperature


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1999 - Not Available

Abstract: No abstract text available
Text: is not affected by stored charge as in conventional PN junction diodes . Nevertheless, when the , 40 Rectangular Pulse Tstg Tj Storage and Junction Temperature Range TL Maximum Lead , schottky rectifier consists of an ideal diode in parallel with a variable capacitance equal to the junction , BYV 10-60 Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus


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507-4861-3337-500

Abstract: 507-4858-3332-500 507-4957-3335-500 507-4857-3337-500 507-4957-3337-500 507-4958-3333-500 507-4760-3335-500 507-4958-3335-500 507-4758-3335-500
Text: DIALIGHT CORP STE » ■2ûl2h72 GDOMEj? 0T3 ■Datalamp Cartridges MEET UL and CSA SPECIFICATIONS DIA W'l LED DATA LAMPS Solid state LEDs are the light source for a series of cartridges and indicator lights used for circuit voltages of 3.6 to 28 volts D.C. Basic materials are Gallium Arsenide Phosphide and Gallium Phosphide, forming PN junction diodes which, when biased in the forward direction, give off energy in the form of light (photons). This light typically peaks at 6700 A for the red, 5600


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PDF l2h72 507-4861-3337-500 507-4858-3332-500 507-4957-3335-500 507-4857-3337-500 507-4957-3337-500 507-4958-3333-500 507-4760-3335-500 507-4958-3335-500 507-4758-3335-500
diode 5082-2800

Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
Text: construction uti lizes a unique combination of both a conventional PN junction and a Schottky barrier. This , °C. 300 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature. PN junction diodes . The low tum-on voltage and subnanosec ond switching make it extreme ly attractive in , storage capacitor. At UHF, the diodes exhibit 95% rectification efficiencies. Both their low loss 3-24 and their high PIV allow the diodes to be used in mixer and modulator applications which require wide


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PDF
Not Available

Abstract: No abstract text available
Text: applied. The PIN diode displays this behavior because, unlike P-N junction diodes , a thin layer of , carrier lifetime, then for frequencies significantly below fo, the PIN diode will behave as a P-N junction , diodes exhibit the lowest available junction capacity, ranging from 0.02 to 0.08 pf. For high frequency multi-throw switches, beam lead diodes are frequently employed at the common junction because of their small , modern microwave systems. Today, the types of PIN diodes available to the component designer is quite


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PDF
1994 - byv 20

Abstract: No abstract text available
Text: carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to reverse blocking state , BYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Parameter Repetitive Peak Reverse Voltage °C °C 230 Storage and Junction Temperature Range °C , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current versus


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1994 - ByV schottky

Abstract: No abstract text available
Text: majority carrier conduction. So reverse recovery is not affected by stored charge as in conventional PN junction diodes . Nevertheless, when the device switches from forward biased condition to reverse blocking , BYV 10-20 40 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION Metal to silicon rectifier diodes in , Parameter Repetitive Peak Reverse Voltage °C °C 230 Storage and Junction Temperature Range °C , capacitance equal to the junction capacitance (see fig. 5 page 4/4). Figure 1. Forward current versus


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