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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

pj 996 diode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2011 - Not Available

Abstract: No abstract text available
Text: : 09 = .009” 15 = .015” 25 = .025” 99 = .099” Code CD CF CG AG AH PG PI PJ NA , 160 300 600 900 N20±15 0±15 0±30 Aluminum Nitride P90±20 P22±30 Alumina 99.6 , Machined Polished Polished Alumina 99.6 % Polished Alumina 96% and Aluminum Nitride As-Fired Alumina 99.6 % Superstrate As per customer requirement Part Number Breakdown Product Code Width Material


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PDF AS9100Â
2012 - pj 996

Abstract: No abstract text available
Text: Dia. [9.19 ± 0.127] 0.392 sq. [ 9.96 sq.] 0.120 [3.05] 2 Vishay Dale LPT-3535xxxLX 3 4 0.450 [11.43] Max. 0.392 sq. [ 9.96 sq.] 0.235 [5.97] Max. SCHEMATICS (connection diagrams , [8.0] 2000 RC2 RE ER 13 0.945 [24.0] 0.472 [12.0] 750 P09 PJ EB 100 RC2 RE ER 13 0.945 [24.0] 0.472 [12.0] 750 P09 PJ EB 100 RC3 RF ER 13 1.26 [32.0] 0.472 [12.0] 500 P09 PJ EB 100 RC4 RG ER 13 1.73 [44.0] 0.472 [12.0] 500 P09 PJ EB 100 ER 13 0.630 [16.0] 0.315 [8.0] 2000 ER 13 0.630 [16.0] 0.472 [12.0] 500


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PDF LPT-3535 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 pj 996
Not Available

Abstract: No abstract text available
Text: CONFIGURATIONS CHAMP PLUG PJ 3 e G. 4-Pair (EIA Wiring) D. 2-Pair (6-Position) 1-Pair (6 , ( 9-96 )


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PDF 25-Pair 25-Pair 10BASE-T 32-Port
CMM0331-AK

Abstract: No abstract text available
Text: temperature with drain voltage (W^) = 3.6 V and Pj ^ = +4 dBm, in Celeritek test fixture. Parameter Condition , 95054 [33] Phone: (408) 986-5060 Fax: (408) 986-5095 CMM0331 Advanced Product Information - September Í 996


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PDF CMM0331 CMM0331-AK
1994 - CMOS spice model

Abstract: di292 ci470 pj 26 diode CI573 i2931 ci547 di640 RI57 W1-300
Text: same pad and protection diode , they differ only in bias resistance. VGND How to Use InputBuff , * * Diode elements * * di26_d di27 , r0_i3 vpwr pdiode nwdiode pdiode pdiode nwdiode pdiode area=800.0000 pj =216.0000 area=2.4000k pj =180.0000 area=800.0000 pj =216.0000 area=80.0000 pj =36.0000 area=500.0000 pj =90.0000 area=80.0000 pj =36.0000 * End of circuit definition .ends .SUBCKT TTLinput vpwr vgnd A


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PDF CY7B923/933. CY7B933. CMOS spice model di292 ci470 pj 26 diode CI573 i2931 ci547 di640 RI57 W1-300
1994 - di292

Abstract: pj 26 diode ci470 MJ-05 ci3022 ci573 SCM30 RI57 di2910 CMOS spice model
Text: TTL input. Both circuit models have the same pad and protection diode , they differ only in bias , A 5.0000n * * Diode , pdiode area=800.0000 pj =216.0000 di27 vgnd r0_i11 nwdiode area=2.4000k pj =180.0000 di32_d r0_i11 vpwr pdiode area=800.0000 pj =216.0000 di39_d vgnd r0_i3 pdiode area=80.0000 pj =36.0000 di40 vgnd r0_i3 nwdiode area=500.0000 pj =90.0000 di44_d r0_i3 vpwr pdiode area=80.0000 pj


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1993 - pj 59

Abstract: PJ 75 pj 26 diode PJ216 PJ 67 PJ 74 ci3015 pj 50 diode pj 84 PJ-25
Text: , ECL input and TTL input. Both circuit models have the same pad and protection diode , they differ , A 5.0000n * * Diode , pdiode area=800.0000 pj =216.0000 di27 vgnd r0_i11 nwdiode area=2.4000k pj =180.0000 di32_d r0_i11 vpwr pdiode area=800.0000 pj =216.0000 di39_d vgnd r0_i3 pdiode area=80.0000 pj =36.0000 di40 vgnd r0_i3 nwdiode area=500.0000 pj =90.0000 di44_d r0_i3 vpwr pdiode area=80.0000 pj


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2008 - diode pj-039

Abstract: pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode
Text: diode unless otherwise specified 20080220 DPG 10 P 400 PJ advanced Ratings Symbol , according to IEC 60747and per diode unless otherwise specified 20080220 DPG 10 P 400 PJ advanced , DPG 10 P 400 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: Planar


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PDF O-273 60747and diode pj-039 pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode
2010 - DPG30P300PJ

Abstract: diode pj 70 pj 35 diode diode pj pj 50 diode BY 255 diode
Text: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ , . Data according to IEC 60747and per diode unless otherwise specified 20100126a DPG 30 P 300 PJ , for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode


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PDF 60747and 20100126a DPG30P300PJ diode pj 70 pj 35 diode diode pj pj 50 diode BY 255 diode
2009 - pj 35 diode

Abstract: DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj
Text: diode unless otherwise specified 20090421 DPG 30 P 300 PJ advanced Ratings Symbol , according to IEC 60747and per diode unless otherwise specified 20090421 DPG 30 P 300 PJ advanced , DPG 30 P 300 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: Planar


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PDF O-273 60747and pj 35 diode DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj
2010 - diode pj 70

Abstract: PJ 75 MM diode pj 70 diode diode pj DPG10P400PJ IXYS DS 145 pj 35 diode PJ diode
Text: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ , . Data according to IEC 60747and per diode unless otherwise specified 20100212a DPG 10 P 400 PJ , for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode


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PDF 60747and 20100212a diode pj 70 PJ 75 MM diode pj 70 diode diode pj DPG10P400PJ IXYS DS 145 pj 35 diode PJ diode
2010 - pj marking

Abstract: diode pj 70 pj 35 diode diode pj pj-25 diode pj 80 PJ 039 Diode marking code PJ DPG30P300PJ
Text: DPG 30 P 300 PJ HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 3 V RRM = I FAV = t rr = 300 V 30 A 35 ns DPG 30 P 300 PJ Backside , Order Code IXYS abcd Part number D P G 30 P 300 PJ = = = = = = = Diode HiPerFRED extreme fast , dissipation within the diode - Turn-on loss in the commutating switch Applications: Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode


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PDF supplies200 60747and 20100126a pj marking diode pj 70 pj 35 diode diode pj pj-25 diode pj 80 PJ 039 Diode marking code PJ DPG30P300PJ
2010 - Not Available

Abstract: No abstract text available
Text: DPG 10 P 400 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low , according to IEC 60747and per diode unless otherwise specified 20100212a DPG 10 P 400 PJ Ratings , according to IEC 60747and per diode unless otherwise specified 20100212a DPG 10 P 400 PJ A E , Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling


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PDF 60747and 20100212a
2010 - DPG30P300PJ

Abstract: No abstract text available
Text: DPG 30 P 300 PJ V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low , Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing , pF Data according to IEC 60747and per diode unless otherwise specified 20100126a DPG 30 P


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PDF 60747and 20100126a DPG30P300PJ
pj 44 diode

Abstract: pj 50 diode pj 44 pj 34 diode pj 50 diode datasheet PJ diode diode pj pj 64 push-pull converter 80V output Latches
Text: parallel converter with latches, polarity, and blanking 300 100 44-Lead PLCC ( PJ ) Operating Voltage Current per Channel Package (V) (mA) 44-Lead PLCC ( PJ ) 44-Lead PQFP (PG) 44-Lead PLCC ( PJ ) 44-Lead PQFP (PG) 44-Lead PLCC ( PJ ) 44-Lead PQFP (PG) 44-Lead PLCC ( PJ ) 44-Lead PQFP (PG) 44-Lead PLCC ( PJ ) Sink Only Outputs - Open Drain P-Channel Output Device Output Channels Direction Logic Configuration 20-Lead Ceramic side braze (C) HV3922 4 CW Pin Diode Driver


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PDF 44-Lead HV5122 HV5222 HV5522 HV5530 HV5622 HV9308 HV9408 pj 44 diode pj 50 diode pj 44 pj 34 diode pj 50 diode datasheet PJ diode diode pj pj 64 push-pull converter 80V output Latches
pj 996

Abstract: Fujitsu IR c code
Text: Jun e l 996 Revision 1.0 HATA fíH F F T PJ CMOS 4M x4 and four4Mx1 Fujitsu MB814100C-(60/70) PJ


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PDF FSA4UN364 16MByte 16-megabyte 36bits, 72-pin, DM4M4N360 DM4M2N360 MB814100C- pj 996 Fujitsu IR c code
1996 - pj 996 diode

Abstract: hz 9102 trw resistor HV9102 HV9100PJ HV9100P HV9100C HV9100 N-Channel Depletion-Mode MOSFET high voltage high-speed power mosfet 2Mhz
Text: Cycle DMIN 49.0 49.4 49.6 HV9103 Deadtime HV9100/02 99.0 99.4 99.6 HV9103 , normal N-channel power MOSFET. Unlike the situation with competitive devices, the body diode can be used , Source ­VIN NC 5 NC 4 14-pin DIP Drain top view top view 20-pin PJ Package


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PDF HV9100/HV9102/HV9103 HV9100 HV9102 HV9103 HV9100P HV9100C HV9100PJ HV9102P HV9102C HV9102PJ pj 996 diode hz 9102 trw resistor HV9102 HV9100PJ HV9100P HV9100C HV9100 N-Channel Depletion-Mode MOSFET high voltage high-speed power mosfet 2Mhz
20 amp MOSFET transistor

Abstract: No abstract text available
Text: 99.4 100 0 175 49.6 99.6 nsec o/ /o nsec % Error Amplifier V fb Feedback Voltage H V 9100/02/03 , switch is a normal N-channel power MOSFET. Unlike the situation with competitive devices, the body diode , In To] OSC Out 9~1 VDD [I a C O Q b u 2 0 [z r top view 20-pin PJ Package it


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PDF HV9100 HV9103 HV9100P HV9101P HV9102P HV9103P HV9100C HV9102C HV9103C HV9100PJ 20 amp MOSFET transistor
2001 - Q9105

Abstract: z0105
Text: . Not subject to production test. 2. Stray capacitance on OSC IN pin 5pF. et 49.4 99.4 100 49.6 99.6 , power MOSFET. Unlike the situation with competitive devices, the body diode can be used if desired , Drain NC 4 20-pin PJ Package top view O bs 11/12/01 ©2001 Supertex Inc. All rights reserved


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PDF HV9105 HV9108 HV9105P HV9108P HV9105PJ HV9108PJ HV9105/HV9108 20-pin Q9105 z0105
1996 - hv9100p

Abstract: Q9100
Text: Minimum Pulse Width Before Pulse Drops Out 1 110 HV9103 49.0 99.0 49.4 99.4 100 0 175 49.6 99.6 nsec % , . Unlike the situation with competitive devices, the body diode can be used if desired without destroying , Source Drain NC NC top view 20-pin PJ Package ­VIN 14 14-27 -


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PDF HV9100/HV9102/HV9103 HV9100 HV9102 HV9103 HV9100P HV9102P HV9103P HV9100C HV9102C HV9103C Q9100
1998 - HV9100

Abstract: HV9103C HV9103 HV9102PJ HV9102P HV9102C HV9102 HV9100PJ HV9100P HV9100C
Text: 99.4 99.6 HV9103 100 Minimum Duty Cycle % nsec 0 % 110 175 nsec 4.00 , situation with competitive devices, the body diode can be used if desired without destroying the chip , Drain 4 14-pin DIP NC top view top view 20-pin PJ Package 14-16 Supertex


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PDF HV9100 HV9102 HV9103 HV9100P HV9100C HV9100PJ HV9102P HV9102C HV9102PJ HV9103P HV9100 HV9103C HV9103 HV9102PJ HV9102P HV9102C HV9102 HV9100PJ HV9100P HV9100C
Not Available

Abstract: No abstract text available
Text: Cycle Minimum Pulse Width Before Pulse Drops O u t1 110 HV9103 49.0 99.0 49.4 99.4 100 0 175 49.6 99.6 , switch is a normal N-channel power MOSFET. Unlike the situation with competitive devices, the body diode , LsJ Q [è] ItJ = 1 o w laj > I top view 20-pin PJ Package iLl 14-27


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PDF HV9100 HV91OOP HV9102P HV9103P HV9100C HV9102C HV9103C HV9100PJ HV9102PJ HV9103PJ
TIL 414

Abstract: No abstract text available
Text: 49.0 49.4 49.6 HV9103 ^MAX 99.0 99.4 99.6 HV9103 100 Minimum Duty Cycle , situation with competitive devices, the body diode can be used if desired without destroying the chip , O LêJ .£ C Ü Q _c lAJ O IzJ < D y D O O T top view 20-pin PJ Package


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PDF HV9100 HV9102 HV9103 HV9100C HV9100PJ HV9102P HV9102C HV9102PJ HV9103P HV9103C TIL 414
1996 - HV9105 TEST TRANSFORMER

Abstract: No abstract text available
Text: 49.0 99.0 49.4 99.4 100 0 175 49.6 99.6 nsec % nsec % Error Amplifier VFB IIN VOS AVOL gbw ZOUT , MOSFET. Unlike the situation with competitive devices, the body diode can be used if desired without , 8 Source Drain NC NC 20-pin PJ Package top view 14-34 ­VIN -


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PDF HV9105/HV9108 HV9105 HV9108 HV9105P HV9108P HV9105PJ HV9108PJ HV9108 HV9105 TEST TRANSFORMER
2001 - hz 9102

Abstract: HV9103P HV9103 HV9102PJ HV9102P HV9102 HV9100PJ HV9100P HV9100 HV9103PJ
Text: Deadtime HV9100/02 99.0 99.4 99.6 HV9103 100 Minimum Duty Cycle % nsec 0 % , N-channel power MOSFET. Unlike the situation with competitive devices, the body diode can be used if , Source ­VIN NC 5 Drain 4 14-pin DIP NC top view top view 20-pin PJ Package


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PDF HV9100 HV9102 HV9103 HV9100P HV9100PJ HV9102P HV9102PJ HV9103P HV9103PJ HV9100 hz 9102 HV9103P HV9103 HV9102PJ HV9102P HV9102 HV9100PJ HV9100P HV9103PJ
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