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Part Manufacturer Description Datasheet Download Buy Part
LTC1550CS8-4.1#TRPBF Linear Technology LTC1550 - Low Noise, Switched Capacitor-Regulated Voltage Inverters; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1550LCMS8-2.5#TRPBF Linear Technology LTC1550L - Low Noise, Switched Capacitor Regulated Voltage Inverters; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1550LCS8-4.1#TRPBF Linear Technology LTC1550L - Low Noise, Switched Capacitor Regulated Voltage Inverters; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LTC1550LCMS8-4.1 Linear Technology LTC1550L - Low Noise, Switched Capacitor Regulated Voltage Inverters; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1550LCMS8-2.5#TR Linear Technology LTC1550L - Low Noise, Switched Capacitor Regulated Voltage Inverters; Package: MSOP; Pins: 8; Temperature Range: 0°C to 70°C
LTC1550CS8-4.1#PBF Linear Technology LTC1550 - Low Noise, Switched Capacitor-Regulated Voltage Inverters; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

pin photodiode 1550 sensitivity Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - JDSU EPM

Abstract: 635-75 EPM635-75 606LL-250 JDS Uniphase photodiode epm pin Photodiode 1550 nm PIN Photodiode 4 Ghz 1550 nm photodiode 1550 nm jdsu epm 650 EPM(R)-04-V
Text: 980 forward pump · 1310 and 1550 PONs The JDSU EPM 6xx Series PIN photodiodes are designed for , ) 0.01 = 1550 nm, Vb = -5V, Pin = 0.5 mW 0.8 0 20 25 30 35 40 45 50 55 , Code 05 05LL 06 06LL 13 50 35 35-75 Model Low back reflection, C-band PIN photodiode Low back reflection, low leakage, C-band PIN photodiode Low back reflection, L-band PIN photodiode Low back reflection, low leakage, L-band PIN photodiode Low back reflection, Pass-band PIN photodiode


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PDF 498-JDSU 5378-JDSU JDSU EPM 635-75 EPM635-75 606LL-250 JDS Uniphase photodiode epm pin Photodiode 1550 nm PIN Photodiode 4 Ghz 1550 nm photodiode 1550 nm jdsu epm 650 EPM(R)-04-V
2004 - InGaas PIN photodiode, 1550 ,sensitivity

Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
Text: monitoring · 980 forward pump · 1310 and 1550 PONs EPM 6xx Series PIN Photodiodes | 2 Application , ) Sample 7 0.84 EPM 605 ( 1550 nm) 0.01 Sample 5 0.88 = 1550 nm, Vb = -5V, Pin = 0.5 mW , 05LL 06 06LL 13 50 + + code 0 DMB model Low back reflection, C-Band PIN Photodiode Low back reflection, low leakage, C-Band PIN Photodiode Low back reflection, L-Band PIN Photodiode Low back reflection, low leakage, L-Band PIN Photodiode Low back reflection, Pass-Band PIN Photodiode


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JDS Uniphase photodiode epm 605

Abstract: JDS Uniphase photodiode epm pin photodiode 1550 sensitivity 606LL InGaas PIN photodiode, 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550
Text: monitoring · 980 forward pump · 1310 and 1550 PONs EPM 6xx Series PIN Photodiodes | 2 Application , ) Sample 7 0.84 EPM 605 ( 1550 nm) 0.01 Sample 5 0.88 = 1550 nm, Vb = -5V, Pin = 0.5 mW , model Low back reflection, C-Band PIN Photodiode Low back reflection, low leakage, C-Band PIN Photodiode Low back reflection, L-Band PIN Photodiode Low back reflection, low leakage, L-Band PIN Photodiode Low back reflection, Pass-Band PIN Photodiode General purpose, high responsivity PIN Photodiode


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2012 - EPM635-75

Abstract: JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series
Text: ( 1550 nm) EPM 605 ( 1550 nm) 0.88 Sample 5 Sample 6 0.84 = 1550 nm, Vb = ­5V, Pin = 0.5 mW , back reflection, C-band PIN photodiode 05LL Low back reflection, low-leakage, C-band PIN photodiode 06 Low back reflection, L-band PIN photodiode 06LL Low back reflection, low-leakage, L-band PIN photodiode 13 Low back reflection, Pass-band PIN photodiode 50 General purpose, high-responsivity PIN , equipment when handling or testing an InGaAs PIN or other junction photodiode . The flexible 250 µm fiber


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PDF 498-JDSU 5378-JDSU EPM635-75 JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series
2013 - JDSU EPM

Abstract: JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635
Text: ( 1550 nm) EPM 605 ( 1550 nm) 0.88 Sample 5 Sample 6 0.84 = 1550 nm, Vb = ­5V, Pin = 0.5 mW , CodeModel 05 Low back reflection, C-band PIN photodiode 05LL Low back reflection, low-leakage, C-band PIN photodiode 06 Low back reflection, L-band PIN photodiode 06LL Low back reflection, low-leakage, L-band PIN photodiode 13 Low back reflection, pass-band PIN photodiode 50 General purpose, high-responsivity PIN , InGaAs PIN or other junction photodiode . The flexible 250 µm fiber coating can be mechanically stripped


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PDF 498-JDSU 5378-JDSU JDSU EPM JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635
2011 - ROSA 1310 10G

Abstract: LC rosa 1310 RXPMGRTL097 jds xfp 10G ROSA ER
Text: KHz 100 KHz Sensitivity average power Sens_Avg 10.709 Gbps, NRZ, PRBS 231-1 1550 nm, ExtRatio>10 dB , . RSSI current output will operate from sensitivity to overload. 1310/ 1550 nm 10 G XFP ROSA , OPTICAL COMMUNICATIONS 1310/ 1550 nm 10 G XFP ROSA Key Features ·Handles data rates up to 10 Gbps ·Supports 1310 nm and 1550 nm multi-rate applications ·Operates from -40°C to 85°C ·Includes , high-reliability JDSU 1310/ 1550 nm 10G XFP ROSA receiver optical sub-assembly (ROSA) product, designed specifically


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PDF 10GBASE-LR/ER OC-192 1-800-498-JDSU 800-5378-JDSU 498-JDSU 5378-JDSU RXPMGRTL097 ROSA 1310 10G LC rosa 1310 jds xfp 10G ROSA ER
InGaAs Epitaxx EPM

Abstract: JDS Uniphase photodiode epm 605 606L JDS Uniphase photodiode epm EPM605LL EPITAXX epm 6xx series pin photodiode 1550 sensitivity EPITAXX EPM InGaAs EPM 6xx
Text: Photodiode w/ 900 µm buffer without connector 250 µm buffer Low back reflection, low leakage, C-Band PIN Photodiode w/ 900 µm buffer without connector 250 µm buffer Low back reflection, L-Band PIN Photodiode w , Photodiode w/ 900 µm buffer without connector 250 µm buffer Low back reflection, Pass-Band PIN Photodiode w/ 900 µm buffer without connector General purpose, high responsivity, PIN Photodiode w/ 900 µm , -5V, Pin = 0.5 mW EPM 605 ( 1550 nm) 0.01 Sample 5 0.88 0.8 0 20 25 30 35


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2009 - TO46 package

Abstract: LC pin rosa 10 10GbaseE
Text: COMMUNICATIONS COMPONENTS 1310/ 1550 nm 10 G XFP ROSA Key Features · Handles data rates up to 10 Gbps · Supports 1310 nm and 1550 nm multi-rate applications · Operates from -40°C to 85°C · , : 800 498-JDSU (5378) The high-reliability JDSU 1310/ 1550 nm RXP M GRTL 097 XX-000 receiver optical , PIN and TIA chips in a custom hermetic TO46 package. Each device is actively aligned to a precision , . WORLDWIDE : +800 5378-JDSU WEBSITE : www.jdsu.com 1310/ 1550 NM 10 G XFP ROSA 2 Dimensions Diagram


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PDF 10GBASE-LR/ER OC-192 498-JDSU XX-000 1-800-498-JDSU 800-5378-JDSU 5378-JDSU RXPMGRTL097 TO46 package LC pin rosa 10 10GbaseE
2012 - JDSU ANALOG RECEIVER

Abstract: ROSA 1310 10G
Text: KHz Sensitivity average power Sens_Avg 10.709 G, NRZ, PRBS 231-1 1550 nm, ExtRatio>10 dB, BER , will operate from sensitivity to overload. 1310/ 1550 nm 10 G XFP ROSA Electrostatic Discharge , OPTICAL COMMUNICATIONS 1310/ 1550 nm 10 G XFP ROSA Key Features ·Handles data rates up to 10 G ·Supports 1310 nm and 1550 nm multi-rate applications ·Operates from -40°C to 85°C ·Includes , high-reliability JDSU 1310/ 1550 nm 10 G XFP ROSA receiver optical sub-assembly (ROSA) product, designed


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PDF 10GBASE-LR/ER OC-192 1-800-498-JDSU 800-5378-JDSU 498-JDSU 5378-JDSU RXPMGRTL097 JDSU ANALOG RECEIVER ROSA 1310 10G
2014 - Not Available

Abstract: No abstract text available
Text: ) Sensitivity @ 1550 nm Psense Sensitivity @1310 nm Overload Power Consumption Psense Pover Pcon ,  XLMD MSA footprint compliant package  PIN / TIA photoreceiver module  Typical 31 GHz bandwidth  2100 V/W conversion gain @ 1550 nm  Differential AC coupled , and 1550 nm. ORDERING INFORMATION MPRV1331A- LP A: LP: = AC coupled = LC/PC optical , Page 1 43 Gb/s High Gain Differential Photoreceiver – April 2014 I. # Pin 1 Pin


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PDF MPRV1331A VSR2000-3R2 VSR2000-3R1 MPRV1331A
ITU-T RECOMMENDATION G.957

Abstract: GR-253 G957 avalanche photodiode oc48 1550 fiber 2.5 pin photodiode 1550 sensitivity DFB APD 155 GR-253-CORE 54TR-21114 Photodiode receiver specification for 1550 nm jdsu semiconductor optical amplifier
Text: optical transmitter; an Avalanche photodiode (APD) or PIN photodiode optical receiver with , Receiver optical input power for APD Receiver optical input power for PIN photodiode Minimum o -5 C , laser, PIN photodiode receiver) 1310 nm Parameter Minimum 2 Average output power (note ) (BOL , Product Bulletin 2.5 Gb/s Transponder with Mux/Demux (1310 and 1550 nm) 54TR Series The JDS , 1310 and 1550 nm, it can be used across a variety of optical fiber systems. The bidirectional modules


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PDF OC-48 ITU-T RECOMMENDATION G.957 GR-253 G957 avalanche photodiode oc48 1550 fiber 2.5 pin photodiode 1550 sensitivity DFB APD 155 GR-253-CORE 54TR-21114 Photodiode receiver specification for 1550 nm jdsu semiconductor optical amplifier
1997 - Photodiode receiver specification for 1550 nm

Abstract: photo receiver with Pigtail 1550 nm SBL51414X SBL81314X SBM51414X SBM81314X photo receiver with Pigtail input wavelength 1550 nm WDM Filter spectrum
Text: . Besides the PIN Photodiode Ge-Avalanche photodiodes can also be used in order to get higher sensitivities , [nm] talk [dB] [nm] [A/W] Sensitivity -32 dBm [dB] SBM51414x 1310 0 1550 0,7 , of Module for Bidirectional Optical Transmission Ipd( Pin ) Pout Ilaser Imon Plaser Pin , Optical Transmission Design of Module The basic devices are a laser diode and a photodiode , each in a , fiber is focused onto the small, light-sensitive area of the photodiode to produce a high photo current


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PDF SBL51414X SBL81314X SBM51414X SBM81314X Photodiode receiver specification for 1550 nm photo receiver with Pigtail 1550 nm photo receiver with Pigtail input wavelength 1550 nm WDM Filter spectrum
2000 - Alcatel ofa

Abstract: 3CN00390AA GP 819 sensitivity dB photodiode pin laser alcatel TL pin photodiode 1550 sensitivity bending radius G.652 ALcatel Single Mode Fiber pin photodiode 1550 photodiode 1550 nm
Text: Isolation Leakage power (Note 2) Time resp. to shut down (Note 3) Polarization sensitivity Polarization mode dispersion Optical transparency Optical return loss (input/output) Input monitor sensitivity (Note 4) Output monitor sensitivity (Note 4) Test Conditions single channel Sym BW Pin Pin , Pin = -6 dBm, Idr0 Pout Pin = -6 dBm Iso TL 0.98µm, Idr = 1.15*Idr0 Tsd Gp 1550 nm; Pin = -6 dBm, Idr0 1550 nm; Pin = -6 dBm, Idr0 PMD Idr = 0 Idr = 0 to Idr0 RL Pin = - 6 dBm Sin Pout =


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2006 - inGaAs photodiode 1550

Abstract: No abstract text available
Text: 200X Min Wavelength Range Typ Peak Sensitivity 1550 Units 1650 1000 Max nm , InGaAs Avalanche Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig.2: Effective , Avalanche Photodiode , IAE-Series Package S6 TO-46 (3 pin ) Package Y Ceramic Submount Page 5 , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the , throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm ideally suited to


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2009 - IAE080X

Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 sensitivity avalanche photodiode
Text: °C IAE080X Min Wavelength Range Peak Sensitivity 1000 1550 Typ Max 1650 Units nm nm Min 1000 1550 Typ IAE200X , InGaAs Avalanche Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig.2: Effective , , info@lasercomponents.fr InGaAs Avalanche Photodiode , IAE-Series Fig. 7: Bias Voltage vs. Temperature (M= 10 @ 1550 nm , Photodiode , IAE-Series PACKAGE DRAWINGS Package S5 TO-46 (2 pin ) Package S6 TO-46 (3 pin ) Page 5 , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a


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2011 - Not Available

Abstract: No abstract text available
Text: , info@lasercomponents.fr InGaAs Avalanche Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig , , info@lasercomponents.fr InGaAs Avalanche Photodiode , IAE-Series Fig. 7: Bias Voltage vs. Temperature (M= 10 @ 1550 nm , , info@lasercomponents.fr InGaAs Avalanche Photodiode , IAE-Series PACKAGE DRAWINGS Package S5 TO-46 (2 pin ) Package , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a , 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe


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2012 - Not Available

Abstract: No abstract text available
Text: Photodiode - IAE-Series Fig. 7: Bias Voltage vs. Temperature (M= 10 @ 1550 nm) 64 62 Bias Voltage , Photodiode - IAE-Series Package Drawings Package S5 TO-46 (2 pin ) Package S6 TO-46 (3 pin ) 5 , Detectors Only available on request! InGaAs Avalanche Photodiode IAE-Series Description The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely , 1550 nm is ideally suited to eye-safe rangefinding applications, free space optical communications


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2003 - 10 Gb PIN receiver

Abstract: pin photodiode 2 GHz 1550 R194T
Text: no connection no connection Case Ground PIN Photodiode Transim. Amp PIN 2 Vpd PIN 14 Vcc , integrates a 10 Gb/s PIN and TIA into a true surface-mount package. It is part of the industry's first , power supply, and low power consumption. Performance Highlights Parameter Sensitivity Overload , 25 Max -17 3.5 50 80 1610 Units dBm dBm V mA °C nm Features 3.3 V TIA and PIN supply 10.7 Gb/s capability -19 dBm typical sensitivity 3 dBm typical overload High gain, 6000 typ. diff. Telcordia


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PDF R194T R194T 10 Gb PIN receiver pin photodiode 2 GHz 1550
2006 - 2X10

Abstract: IEC-60825 STM-16 TRSL-9340AWG TRSL-9340WG
Text: * TRSL-9340WG / TRSL-9340AWG 3.3V / 1550 nm / 2.5 Gbps RoHS Compliant SFF LC 2X10 SINGLE-MODE , Compliant with IEEE 802.3z Gigabit Ethernet Multi-sourced 2X10 SFF Package Style 1550 nm DFB LD , designed for single mode fiber and operates at a nominal wavelength of 1550 nm. A guaranteed minimum , worst case fiber loss of 0.3 dB/km). The transmitter section uses a multiple quantum well 1550 nm DFB , -2/S-16.2 IR-2/S-16.2 Distance (km) 40 40 Wavelength Package (nm) 1550 DFB 2X10 LC 1550


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PDF TRSL-9340WG TRSL-9340WG TRSL-9340AWG OC-48 STM-16 TRSL-9340WEG TRSL-9340AWEG 2X10 IEC-60825 STM-16 TRSL-9340AWG
2001 - FC Receptacle

Abstract: TO46 package InGaas PIN photodiode, 1550 sensitivity PIN photodiode 1310 STM-16 book pin Photodiode 1550 nm ir receiver transistor IR receiver "beam splitter" InGaas PIN photodiode, 1550
Text: . Spectral sensitivity VR=­2 V, Popt=1 µW The PIN photodiode is made of InGaAs/InP and has an active , SRD00217x Ternary PIN Photodiode in Receptacle Package Dimensions in mm SRD00217G SRD00217N , N SRD00217x, Ternary PIN Photodiode in Receptacle Package 2 Pin Description Pinning (bottom , package Absolute Maximum Ratings Module SRD00217G SRD00217N FEATURES · InGaAs/InP PIN photodiode · Designed for applications in fiber-optics communication systems · Sensitive receiver for 2nd


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PDF SRD00217x SRD00217G SRD00217N OC-48, STM-16 D-13623, FC Receptacle TO46 package InGaas PIN photodiode, 1550 sensitivity PIN photodiode 1310 STM-16 book pin Photodiode 1550 nm ir receiver transistor IR receiver "beam splitter" InGaas PIN photodiode, 1550
2007 - Not Available

Abstract: No abstract text available
Text: Avalanche Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig.2: Effective Quantum , Avalanche Photodiode , IAE-Series Package S6 TO-46 (3 pin ) Package Y Ceramic Submount Page 5 , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the , throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm ideally suited to , °C IAE080X Min Wavelength Range Peak Sensitivity Typ IAE200X Units Min 1650 1000 Max


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2011 - Not Available

Abstract: No abstract text available
Text: * TRSL-9340WG / TRSL-9340AWG 3.3V / 1550 nm / 2.5 Gbps RoHS Compliant SFF LC 2X10 SINGLE-MODE , channel. This module is designed for single mode fiber and operates at a nominal wavelength of 1550 nm , multiple quantum well 1550 nm DFB laser and is a class 1 laser compliant according to International , IEEE 802.3z Gigabit Ethernet Multi-sourced 2X10 SFF Package Style 1550 nm DFB LD Transmitter 18 dB , /SDH IR-2/S-16.2 IR-2/S-16.2 Distance (km) 40 40 Wavelength Package (nm) 1550 DFB 2X10 LC


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PDF TRSL-9340WG TRSL-9340WG TRSL-9340AWG OC-48 STM-16 TRSL-9340WEG TRSL-9340AWEG
2007 - IAE080X

Abstract: InGaas PIN photodiode, 1550 sensitivity iae200 IAE200X rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
Text: Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig.2: Effective Quantum Efficiency vs , Photodiode , IAE-Series PACKAGE DRAWINGS Package S5 TO-46 (2 pin ) Package S6 TO-46 (3 pin ) Page 5 , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the , throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm ideally suited to , Min Wavelength Range Peak Sensitivity Typ IAE200X Units Min 1650 1000 Max nm


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2006 - Not Available

Abstract: No abstract text available
Text: Avalanche Photodiode , IAE-Series Fig.1: Spectral Response (M=10 @ 1550 nm) Fig.2: Effective Quantum , Avalanche Photodiode , IAE-Series Package S6 TO-46 (3 pin ) Package Y Ceramic Submount Page 5 , InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the , throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm ideally suited to , °C IAE080X Min Wavelength Range Peak Sensitivity Typ IAE200X Units Min 1650 1000 Max


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2005 - JDSU ERM

Abstract: erm568
Text: handling or testing an InGaAs PIN or any other junction photodiode . Lead soldering temperature should not , COMMUNICATIONS COMPONENTS 10 Gb/s SFF Receiver ­ PIN Micro ERM 568 HM Low Gain, ERM 568 JM High Gain Key Features · High sensitivity · Differential outputs · Transimpedance gain: - HM: 750 V/W - , 11.3 Gb/s · 300 pin transponders · Optical cross-connects The JDSU ERM 568 HM and ERM 568 JM are , . These receivers combine high sensitivity and high overload characteristics. NORTH AMERICA : 800 498


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PDF ERM568HMJM 498-JDSU 5378-JDSU JDSU ERM erm568
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