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HV120-SM02-R HV120-SM02-R ECAD Model Superior Sensor Technology Board Mount Pressure Sensors 20 inWC, Single Die
HV210-SM02-M HV210-SM02-M ECAD Model Superior Sensor Technology Dual Die Differential Pressure Sensor Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Multi Tray
ND210-SM02-M ND210-SM02-M ECAD Model Superior Sensor Technology Dual Die Multi-Range Differential Pressure Sensor ±62.5 to ±2.5K Pa (±0.25 to ±10 inH2O) - Multi Tray
HS210-SM02-M HS210-SM02-M ECAD Model Superior Sensor Technology Dual Die Differential Pressure Transmitter Subsystem Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Multi Tray
SP210-SM02-T SP210-SM02-T ECAD Model Superior Sensor Technology Dual Die Differential Pressure Sensor Optimized for Medical ±250 Pa to ±2500 Pa - Single Tray
HS210-SM02-C HS210-SM02-C ECAD Model Superior Sensor Technology Dual Die Differential Pressure Transmitter Subsystem Optimized for HVAC ±25 to ±2.5K Pa (±0.1 to ±10 inH2O) - Cut Tape

photodiode die WAFER Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2015 - Not Available

Abstract: No abstract text available
Text: €¢ Design assistance • Assembly assistance • Die handling assistance Wafer processing duty • Wafer mapping/ wafer inking • Wafer thinning • Wafer dicing • Die sorting • Visual , die are not singulated • Sawn wafer on loose foil: the wafers are sawn and supplied on blue tape , discoframe Die are not singulated, wafers are provided in box. Wafer is provided on blue foil; probed , V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Bare Die Optoelectronics


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PDF VMN-SG2200-1502
photodiode die WAFER

Abstract: chip diode "sawn on foil" T1670P-SF-F T1670P FVOV6870 MIL-HDBK-263
Text: Sensitive area AS 0.27 mm2 Wafer diameter D Die height H Bond pad anode , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES · · · · · · · · · · · · A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 , . Package type: chip Package form: single chip Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.28 Wafer , packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics


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PDF T1670P T1670P 18-Jul-08 photodiode die WAFER chip diode "sawn on foil" T1670P-SF-F FVOV6870 MIL-HDBK-263
2009 - Not Available

Abstract: No abstract text available
Text: area AS 0.27 mm2 Wafer diameter D Die height H Bond pad anode www.vishay.com , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES • • • • • • â , photodiode with 0.27 mm2 sensitive area, high speed and high photo sensitivity. It is sensitive to visible , in mm): 0.72 x 0.72 x 0.28 Wafer diameter (in mm): 100 Radiant sensitive area (in mm2): 0.27 Peak , to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die


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PDF T1670P T1670P 18-Jul-08
2011 - T1670P

Abstract: mhz disco FVOV6870 MIL-HDBK-263 photodiode CIE eye response
Text: Sensitive area AS 0.27 mm2 Wafer diameter D Die height H Bond pad anode , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES · · · · · · · · · · · · A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 , . Package type: chip Package form: single chip Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.28 Wafer , packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics


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PDF T1670P T1670P 18-Jul-08 mhz disco FVOV6870 MIL-HDBK-263 photodiode CIE eye response
FVOV6870

Abstract: MIL-HDBK-263 PIN photodiode chip photodiode die WAFER
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES · Package type: chip · Package form: single chip · Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 · Wafer diameter (in mm): 100 · , T1610P is a high speed and high sensitive PIN photodiode chip with 7.7 mm2 sensitive area. It is , to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die , this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and


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PDF T1610P T1610P 2002/95/EC 2002/96/EC 18-Jul-08 FVOV6870 MIL-HDBK-263 PIN photodiode chip photodiode die WAFER
ic 555 use with metal detector

Abstract: DVD optical pick-up assembly CD laser pickup assembly bolometer detector Light Detector laser
Text: bonded to ceramic bases. Die bond Plastic package A laser cuts a wafer by irradiating the , Radiation detector Si photodiode Light sources Photosensors InGaAs photodiode KOTHC0010E , midsummer Photomultiplier tube Si photodiode MPPC CCD image sensor Note: Correlation between the , Photodiode APD, MPPC Photo IC PSD (position sensitive detector) Image sensor •High-speed response UV , Si photodiode for X-ray Baggage inspection, non-destructive inspection, medical equipment Si


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til 701

Abstract: photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
Text: for customer specific applications i.e. ASICs Probe Tested die in wafer form to "Fabless chip companies'' and OEM's with in-house chip design capability. Processed wafers meeting agreed visual and wafer map criteria on either SEMEFAB's or the customer's test insert. Page 44 Semefab WAFER , 'rr* til// 'W W r Semefab SILICON DESIGN - WAFER FABRICATION SEMEFAB (SCOTLAND) LTD. is the Group's wafer fabrication facility based in Glenrothes, Fife. Located adjacent to


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PDF 100mm 10OOnm til 701 photodiode die WAFER MAGNATEC LATERAL MOSFET magnatec mosfets depletion mode mosfet 100 MHz semefab Power MOSFET Wafer pps 501 semelab mosfet lateral
2012 - photodiode die WAFER

Abstract: FVOV6870
Text: Length of chip edge (x-direction) Length of chip edge (y-direction) Sensitive area Wafer diameter Die , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES · · · · · · · · · · · · Package type: chip Package form: single chip Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.28 Wafer diameter , T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high , . Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance


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PDF T1670P 2002/95/EC 2002/96/EC T1670P 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 photodiode die WAFER FVOV6870
2001 - 7133 voltage regulator

Abstract: MC20L10 photodiode preamplifier AGC MC2010 MC2010LDIEWP MC2010LWAFER MC2010SDIEWP MC2010SWAFER OC-24 MC20S
Text: MSOP (mini-SO) package or in die form. q q The MC20L10 has low noise and wide dynamic range , applications. The MC2010 is available in both die or packaged form. For optimum system performance die should , the Microcosm MC2046 postamplifier IC. When combined with a photodiode , the chipset forms a high , Waffle Pack MC2010SWAFER Expanded whole 8" wafer on a 10" grip ring MC2010LWAFER Expanded whole 8" wafer on a 10" grip ring TOP LEVEL DIAGRAM BLOCK DIAGRAM VCC VCC MON DOUT


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PDF MC2010 25Gbs -27dBm MC20L10) 830MHz 25Gbs. MC20S10) MC2010 7133 voltage regulator MC20L10 photodiode preamplifier AGC MC2010LDIEWP MC2010LWAFER MC2010SDIEWP MC2010SWAFER OC-24 MC20S
2012 - Not Available

Abstract: No abstract text available
Text: Length of chip edge (x-direction) Length of chip edge (y-direction) Sensitive area Wafer diameter Die , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES · · · · · · · · · · · · Package type: chip Package form: single chip Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.28 Wafer diameter , T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 sensitive area, high speed and high , . Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance


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PDF T1670P 2002/95/EC 2002/96/EC T1670P 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2011 - FVOV6870

Abstract: MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES · Package type: chip · Package form: single chip · Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 · Wafer diameter (in mm): 100 · , T1610P is a high speed and high sensitive PIN photodiode chip with 7.7 mm2 sensitive area. It is , to perform testing in actual proposed packaged and used conditions. Vishay optoelectronics die , this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and


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PDF T1610P T1610P 2002/95/EC 2002/96/EC 18-Jul-08 FVOV6870 MIL-HDBK-263 chip diode "sawn on foil" photodiode CIE eye response
2009 - Not Available

Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: chip • Package form: single chip • Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 • Wafer diameter (in mm , : ϕ = ± 60° DESCRIPTION T1610P is a high speed and high sensitive PIN photodiode chip with 7.7 , optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures and are , forth in this datasheet for semiconductor die will vary depending on a number of packaging, handling


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PDF T1610P T1610P 2002/95/EC 18-Jul-08
2011 - FVOV6870

Abstract: MIL-HDBK-263 T1670P
Text: Wafer diameter D Die height H Bond pad anode www.vishay.com 2 x*y mm 100 0.265 , T1670P Vishay Semiconductors Silicon PIN Photodiode FEATURES · · · · · · · · · · · · A 21667 DESCRIPTION T1670P ambient light sensor chip is a PIN photodiode with 0.27 mm2 , . Package type: chip Package form: single chip Dimensions (L x W x H in mm): 0.72 x 0.72 x 0.28 Wafer , packaged and used conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics


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PDF T1670P T1670P 11-Mar-11 FVOV6870 MIL-HDBK-263
2007 - SF107

Abstract: No abstract text available
Text: . Please contact us for details Please contact us to discuss any volume die / wafer requirements. Contact , WAFER PROCESSING A Proven Record The Semelab Group has been a leading provider of high-end , cost-effective packaging and die solutions for your particular individual needs. The enviable reputation we , , Assembly, Test and Engineering Semelab has it's own ISO 9000 approved wafer fab at Glenrothes in Scotland , control, these feature an internal photodiode . Alternative colours are available on request to match your


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PDF FM36235 M1040 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 A1006 SF107
2006 - M02024-BRF-001-A

Abstract: GPON M02024 avalanche photodiode bias GPON block diagram TIA AGC application note OC48 Photodiode apd high sensitivity photodiode die WAFER GPON APD
Text: . > Key Features > -29 dBm Sensitivity > Photodiode current monitor > Data rates to 2.5 Gbps > Internal or external bias for photodiode > Integrated filter, eliminates need for a capacitor on the > Single +3.3V supply photodiode cathode > Same pad layout and die > AGC provides dynamic size as , . The AGC monitors the output amplitude and automatically reduces the TIA gain when the photodiode , , eliminating the need for an external capacitor on the photodiode cathode. The circuit is intended to be


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PDF M02024 M02024 -29dBm, M02011/13/00 M02024-BRF-001-A M02024-BRF-001-A GPON avalanche photodiode bias GPON block diagram TIA AGC application note OC48 Photodiode apd high sensitivity photodiode die WAFER GPON APD
2006 - M02020-22

Abstract: photodiode die WAFER M02020 TIA AGC application note 0201X-PBD-002 photodiode esd sensitivity
Text: range of 27 dB 3.6 k differential transimpedance 4 mAPP overload input current Photodiode current monitor Internal or external bias for photodiode Single +3.3V supply Same pad layout and die size as , output amplitude and automatically reduces the TIA gain when the photodiode current exceeds the AGC threshold, maintaining the output at a constant level. A replica of the average photodiode current is , -12 Waffle Pack ­40 °C to 95 °C M02020-22 Sawn Quartered Wafer ­40 °C to 95 °C M02020


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PDF M02020 M02020 M02020. 02020-DSH-001-F M02020-22 photodiode die WAFER TIA AGC application note 0201X-PBD-002 photodiode esd sensitivity
2012 - Not Available

Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES · Package type: chip · Package form: single chip · Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 · Wafer diameter (in mm): 100 · , photodiode chip with 7.7 mm2 sensitive area. It is sensitive to visible light much like the human eye and has , actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay , processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary


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PDF T1610P T1610P 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12
2012 - Not Available

Abstract: No abstract text available
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES · Package type: chip · Package form: single chip · Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 · Wafer diameter (in mm): 100 · , photodiode chip with 7.7 mm2 sensitive area. It is sensitive to visible light much like the human eye and has , actual proposed packaged and used conditions. Vishay optoelectronics die products are tested using Vishay , processes. Estimates such as those described and set forth in this datasheet for semiconductor die will vary


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PDF T1610P T1610P 2002/95/EC 2002/96/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
4335TA

Abstract: photodiode amplifier 7.5 ghz inphi TIA inphi pin Photodiode 2 GHz circuit inphi TIA 10 pin photodiode 10 ghz OC-768 STM-256 43Gbps
Text: transimpedance with and without photodiode . 40 50 Figure 2. Measured S21 (samples across entire wafer , input sensitivity ­9 dBm ( = 0.5 A/W, ER = 9.5 dB) Single +3.3 V power supply Available in die form , available in die form. Inphi Proprietary Page 1 of 6 Block Diagram VPIN VCC PINCATH 20 4 , Assumes photodiode specification on Page 5 40 50 - GHz Rise/Fall Time tr/tf 20-80 , photodiode 15 S21 (dB) 20 50 ZT (dBOhm) 55 45 ZT_die 40 10 5 ZT_PD 0 35


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PDF 4335TA OC-768 STM-256 4335TA photodiode amplifier 7.5 ghz inphi TIA inphi pin Photodiode 2 GHz circuit inphi TIA 10 pin photodiode 10 ghz 43Gbps
2011 - FVOV6870

Abstract: MIL-HDBK-263
Text: T1610P Vishay Semiconductors Silicon PIN Photodiode FEATURES · Package type: chip · Package form: single chip · Dimensions (L x W x H in mm): 2.97 x 2.97 x 0.28 · Wafer diameter (in mm): 100 · , T1610P is a high speed and high sensitive PIN photodiode chip with 7.7 mm2 sensitive area. It is , testing in actual proposed packaged and used conditions. Vishay optoelectronics die products are tested , semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore


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PDF T1610P T1610P 2002/95/EC 2002/96/EC 11-Mar-11 FVOV6870 MIL-HDBK-263
2015 - Light Detector laser

Abstract: short distance measurement ir infrared diode
Text: , optical elements, sensors, and wafer level packages Downsize, integration Module technology , /cephalometric imaging equipment for dental diagnosis. Si photodiode arrays 3 CCD area image sensors , manufacturing equipment Infrared LED and Si PIN photodiode arrays are used to configure encoders built into robots for position control. Back-thinned TDI-CCD image sensors are used for wafer defect inspections. Infrared LED Si PIN photodiode arrays Back-thinned TDI-CCD image sensors ©Zoe-Fotolia.com CMS


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PDF KOTH0001E15 Light Detector laser short distance measurement ir infrared diode
850nm photodiode analog amplifier

Abstract: LWL-DMA025 HFP1500 photodiode die WAFER 74AC 74HC iec 60793 LWL-DMA-025 schema DIGITAL TO ANALOG
Text: . 10 7 . LWL-DMA025 V3a 31 DIE DIMENSIONS , for many applications. 1 depends on the used photodiodes, e.g. an IRD photodiode is used for , sensitivity 660/850nm 660/850nm device IC-TIA2 LWL-DMA025 V3a 31 SL LWL-DMA025 V3A 31 DIE 660 , photodiode and the IC-TIA2 for the signal amplifying and processing. The separate photodiode (IRD, IPD) in , , 660nm and 850nm. Alternatively, the device LWL-DMA025 can be supplied with an IRD photodiode if the


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PDF LWL-DMA025 DB-04-161f 850nm photodiode analog amplifier LWL-DMA025 HFP1500 photodiode die WAFER 74AC 74HC iec 60793 LWL-DMA-025 schema DIGITAL TO ANALOG
2004 - GaAs photodiode Emcore

Abstract: No abstract text available
Text: PRODUCT BRIEF | FEBRUARY 10, 2004 1 x 4 GaAs PIN Photodiode Array Model 8485-1406 EMCORE's 4 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE's own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing needs of fiber optic , Low dark current Physical Description Parameter Die Length Die Width Die Height Diode Pitch Bond


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ic 747

Abstract: PIN photodiode 850nm dbm 10Gb PT1001-TO ic ca 747 OEpic pt1001 L1001-A PT1001-A
Text: (Received Signal Strength Indicator) has been implemented. This device is available in bare die (PT1001-A , complete solution from design, material growth, wafer fabrication and test, to volume production of 10 Gb , Sensitivity 10-9 BER Photodiode Optical Aperture OEpic Inc. 1231 Bordeaux Drive Sunnyvale, CA 94089 USA , Page 2 of 4 Impulse Response Mechanical Specifications Die Attach and Bonding Procedures Length Width Thickness Die Attach: Eutectic die attach is recommended. For eutectic die attach


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PDF PT1001-A 850nm PT1001-A AN1001-A) ic 747 PIN photodiode 850nm dbm 10Gb PT1001-TO ic ca 747 OEpic pt1001 L1001-A
2004 - GaAs photodiode Emcore

Abstract: No abstract text available
Text: PRODUCT BRIEF | FEBRUARY 10, 2003 1x12 GaAs PIN Photodiode Array, 8485-1006 EMCORE's 12 channel Gallium Arsenide (GaAs) PIN photodiode array is designed for multimode fiber applications. Utilizing EMCORE's own state-of-the-art MOCVD wafer foundry and device fabrication facility guarantees a reliable high volume fabrication source of package ready die to meet the growing needs of fiber optic component , current Physical Description Parameter Die Length Die Width Die Height Diode Pitch Bond Pads Substrate


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PDF 100x150 PD1x12 GaAs photodiode Emcore
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