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Part Manufacturer Description Datasheet Download Buy Part
OPT101P-J Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70
OPT101P-JG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-SOP 0 to 70
OPT301M Texas Instruments Integrated Photodiode and Amplifier In Hermetically Sealed Package 8-TO -55 to 125
OPT101PG4 Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70
OPT101P Texas Instruments Monolithic Photodiode and Single-Supply Transimpedance Amplifier 8-PDIP 0 to 70
MCP6031DM-PTPLS Microchip Technology Inc BOARD DEMO MCP6031 PHOTODIODE

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Silicon Photocells

Abstract: VTS7070A vactec photodiode 21 187 uv led 365 UV Photodiode Vactec TR 0431 240 L025 photodiode VTS VTS70
Text:  VTS -3 PROCESS SUPER BLUE ENHANCED LARGE AREA PHOTODIODE FEATURES • Enhanced UV to IR , Temperatur«, °C ASSOLUTE SPECTRAL RESPONSE loo 400 600 800 1000 1200 WaveUngtfi - nm ^EBcB VACTEC VTS , max typ. typ. UNMOUNTED CELLS'1 W VTS -70 44A 203 20.3 392 0,800 0800 0607 7.8 26 240 275 1.25 5,0 005 3,4 VTS -71 44C 203 10.2 187 0.800 0.400 0290 3,7 12 115 130 1.0 40 0.06 16 VTS -72 44A 10.2 10.2 93 Q.400 0400 0.144 1.9 6,0 55 63 0.5 20 0,12 0.83 VTS -73 44C 20.3 5,1 85 0800


OCR Scan
PDF 340nm, 633nm, 800nm 220nm VTS-74 VTS-75 VTS-76 VTS--77 VTS7070A| Silicon Photocells VTS7070A vactec photodiode 21 187 uv led 365 UV Photodiode Vactec TR 0431 240 L025 photodiode VTS VTS70
VTS4085

Abstract: VTS-84 VTS1188 photodiode VTS vactec photodiode 21 187 VTS7080A VTS-4085S VTS-83 VTS-81 VTS-11
Text:  VTS -2 PROCESS LOW CAPACITANCE LARGE AREA PHOTODIODE FEATURES • Visible to IR spectral , . UNMOUNTED CELLS!"» VTS -80 44A 203 20.3 392 0.800 0800 0607 — 210 2.50 325 0.2 1,0 03 5.0 VTS -81 44C 20,3 10,2 187 0.800 0.400 0290 — 100 1,20 1.60 0.1 0,5 0,6 2.3 VTS -82 44A 10.2 10.2 93 0.400 0.400 0.144 — 50 0.60 0.74 0.05 0,2 1.2 1.0 VTS -83 44C 20,3 5.1 85 0.800 0.200 0.132 — 46 0,55 0.69 0.05 02 12 1,0 VTS -84 44C 10 2 5,1 42 0.400 0.200 0.065 — 23 027 0.35 0.04 0,1 1.5 0.60


OCR Scan
PDF 940nm, VTS1188L I/TS4085H VTS4085S VTS608S/ 10O3V VTS7080A VTS4085 VTS-84 VTS1188 photodiode VTS vactec photodiode 21 187 VTS-4085S VTS-83 VTS-81 VTS-11
all type transistor equivalent

Abstract: pin details of photo transistor block diagram circuit diagram for photointerrupter phototransistor HV IR block photodiode Infrared Phototransistor photodiode chip silicon pn junction diode structure high sensitivity reflective photo interrupter ir led PHOTODIODE
Text: Introduction Detecting devices Photodiode When light is incident on a silicon PN junction, the , photodiode has a sensitivity for all electromagnetic radiation with a wavelength less than 1100 nm. I Introduction As shown in Figure 9, the structure of the photodiode can be classified as a PN type or a PIN type , Cathode PIN type Photodiode envelope structure The photodiodes are available in three types of , structure of the molded type, the type currently manufactured by Rohm, and the photodiode equivalent circuit


OCR Scan
PDF
2006 - Not Available

Abstract: No abstract text available
Text: . PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA–640 µA with 2.5 µA , VCSEL bias current and the photodiode current. CR = IBIAS-VCSEL/IPD. Two photodiode current ranges can be selected by means of the PDR register (bit 5 of register 0). The photodiode range should be


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit
2006 - Not Available

Abstract: No abstract text available
Text: Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA–640 µA with 2.5 µA , VCSEL bias current and the photodiode current. CR = IBIAS-VCSEL/IPD. Two photodiode current ranges can be selected by means of the PDR register (bit 5 of register 0). The photodiode range should be


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - BLM15HG102SN1

Abstract: 15-V BLM15HG102SN1D ONET1191V STM-64 MS501 chemical control process block diagram
Text: chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit BLM15HG102SN1 15-V BLM15HG102SN1D ONET1191V STM-64 MS501 chemical control process block diagram
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - BLM15HG102sn1d

Abstract: No abstract text available
Text: Photodiode reverse bias voltage Photodiode fault current level, percent of target IPD (1) VTS Temperature , Functionality SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA


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PDF ONET1191V SLLS750 20-Pin 10-Gigabit OC-192/SDH STM-64 BLM15HG102sn1d
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - apc ups 640

Abstract: BLM15HG102SN1D STM-64 SFP SFP fiber optic pinout s0212 STM-64 resistor 284 ONET1191V modc7 15-V
Text: ENA Enables chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =


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PDF ONET1191V SLLS750 20-Pin 10-Gigabit OC-192/SDH STM-64 apc ups 640 BLM15HG102SN1D STM-64 SFP SFP fiber optic pinout s0212 resistor 284 ONET1191V modc7 15-V
2006 - BLM15HG102SN1D

Abstract: s0212 15-V ONET1191V STM-64 P0031-04
Text: chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit BLM15HG102SN1D s0212 15-V ONET1191V STM-64 P0031-04
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - BLM15HG102SN1

Abstract: 15-V BLM15HG102SN1D ONET1191V STM-64
Text: chip when set to 1. Can be toggled low to reset a fault condition. PDP Photodiode polarity Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND PDR Photodiode current range Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA , ] and the coupling ratio (CR) between the VCSEL bias current and the photodiode current. CR =


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit BLM15HG102SN1 15-V BLM15HG102SN1D ONET1191V STM-64
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2005 - Not Available

Abstract: No abstract text available
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA
2005 - Not Available

Abstract: No abstract text available
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2006 - Not Available

Abstract: No abstract text available
Text: SYMBOL ENA PDP Enable Photodiode polarity REGISTER FUNCTION Enables chip when set to 1. Can be toggled low to reset a fault condition. Photodiode polarity bit: 1 = photodiode cathode connected to VCC 0 = photodiode anode connected to GND Photodiode current range bit: With coupling ratio CR between VCSEL bias current and photodiode current = 30 1 = 12 µA­640 µA with 2.5 µA resolution 0 = 2.5 µA­12 8µA with 0.5µA , 1 Equalizer is turned off and bypassed PDR Photodiode current range OLE Open loop enable


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PDF ONET1191V SLLS750A 20-Pin 10-Gigabit OC-192/SDH STM-64
2005 - ONET4291VA

Abstract: No abstract text available
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA
2005 - SLLS674

Abstract: No abstract text available
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA SLLS674
2005 - Not Available

Abstract: No abstract text available
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA
2005 - SFP fiber optic pinout

Abstract: common cathode photodiode
Text: Functionality Symbol ENA PDP Enable Photodiode polarity Register Photodiode polarity bit: 1 = common anode 0 = common cathode Photodiode current range bit: 1 = 0 µA ­ 500 µA with 2-µA resolution 0 = 0 µA ­ 250 µA , photodiode current is: CR = IBIAS-VCSEL / IPD PDR = 0 (see above), BIASC = 0 . 255, IBIAS-VCSEL 12 mA , chip when set to 1. Can be toggled to reset a fault condition. PDR Photodiode current range , register settings BIASC[0.7] and the coupling ratio (CR) between the VCSEL bias current and the photodiode


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PDF ONET4291VA SLLS674 20-Pin ONET4291VA SFP fiber optic pinout common cathode photodiode
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