BF996S,215 datasheet
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.3 pF; COS: 0.8 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 4 to 20 mA; I<sub>DSS</sub> min.: 0.8 mA; Noise figure: 1.8@800MHz dB; Note: With external bias ; Remarks: UHF ; -V(P)GS MAX: 2.5 V; V<sub>DS</sub>max: 20 V; Y<sub>FS</sub> min.: 15 mS; Package: SOT143B (SOT4); Container: Tape reel smd
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Original
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