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    DSAEDA000985.pdf

    • Toshiba
    • GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and col
    • Original
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    DSAEDA000985.pdf preview Download Datasheet

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