DSA2IH00180133.pdf

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Partial File Text SIEMENS Datasheet GaAs FET CFY30 * Low noise ( Fw,, = 1.4 dB @ 4 G H z ) * High gain (11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted plan
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