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    DSAZIHA100018916.pdf

    • American Microsemiconductor
    • 2N2959 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)20 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)175þ I(CBO) Max. (A)25nØ
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