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    DSA00183275.pdf

    • United Monolithic Semiconductors
    • EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT)
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    DSA00183275.pdf preview Download Datasheet

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