DSA2IH0073367.pdf

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Partial File Text PD - 9.1530A I R F I 9 Z 3 4 N HEXFET® Power MOSFET Advanced Process Technology isolated Package High Voltage Isolation = 2.5KVRMS ® Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche R
Type Scan
Alternative Parts
IRF9Z34NPBF AUIRF9Z34N IRF9Z34NPBF

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