DSA2IH0057619.pdf

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Partial File Text 2SJ506(L), 2SJ506(S) Silicon P Channel MOS FET High Speed Power Switching HITACHI Features · Low on-resistance Roaon) = 0.065 Q typ. (at V GS= -1 0 V , ID = -5 A ) · · · L o w drive current H ig
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