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    DSA00760368.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-8-252 TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz n HIGH GAIN G1dB=5.0 dB at 13.75 GHz to 14.5 GHz n BRO
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