DSA00153792.pdf

Manufacturer Cree
Partial File Text CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree's CGHV96100F1 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (Si
Type Original
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