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    DSASW00131295.pdf

    • California Eastern Laboratories
    • HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3517S03 K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET FEATURES ยท Super low noise figure, high associated gain NF = 0.7 dB TYP., Ga = 13.5 d
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    DSASW00131295.pdf preview Download Datasheet

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    HS350 k-band amplifier marking t1c NE3517S03 NE3517S03-A NE3517S03-T1C NE3517S03-T1D-A rogers 5880 rt duroid RT DUROID 5880 rt/duroid 5880
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