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    Scans-0094194.pdf

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    • TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) 2 S C 2 6 6 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) •
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    2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y
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