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DSA00102820.pdf
Manufacturer
Renesas Technology
Partial File Text
RQA0010VXDQS Silicon N-Channel MOS FET REJ03G1692-0100 Rev.1.00 Jun 11, 2008 Features ยท High output power, High gain, High efficiency Pout = +31.8 dBm, Linear Gain = 20 dB, PAE = 60% (f = 45
Type
Original
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iec 158-1
RQA0010VXDQS
RQA0010VXDQSTL-E
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