BF998WR,115 datasheet
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; I<sub>D</sub>: 30 mA; I<sub>DSS</sub>: 2 to 18 mA; I<sub>DSS</sub> min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; V<sub>DS</sub>max: 12 V; Y<sub>FS</sub> min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd
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