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    Scans-00102265.pdf

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    •  LEE] FIELD EFFECT POWER TRANSISTOR IRF642,643 116 AMPERES 200,150 VOLTS RDS(ON) = Ù.22 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology
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    • RFP15N12 RFP10N12 IRF643PBF

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