DSAIH00084666.pdf

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Partial File Text MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D A x ia l Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S t
Type Scan
Alternative Parts
SB130 1N5818-BP 1N5818CE SR130U06 1N5818-AP-HF

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