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    DSA00162817.pdf

    • California Eastern Laboratories
    • NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES · HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B · LOW NOISE FIGURE: 1.1 dB at 1 GHz · HIGH COLLECTOR CURRENT: 100 mA · HIGH
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    DSA00162817.pdf preview Download Datasheet

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    2sc3355 2SC4226 2SC5006 2SC5011 low noise Micro-X marking "K" Micro-X Marking 865 NE AND micro-X NE856 NE85600 NE85618 NE85619 NE85630 NE85632 NEC NE85635 Transistor BJT 547 b
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