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    DSA00245216.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET TIM1112-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=42.0dBm at 11.7GHz to 12.7GHz n HIGH GAIN G1dB=6.0dB at 11.7GHz to 12.7GHz n BRO
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