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DSA00207620.pdf
Manufacturer
Eudyna Devices
Partial File Text
FHX35LG Super Low Noise HEMT FEATURES · Low Noise Figure: 1.2B (Typ.)@f=12GHz · High Associated Gain: 10.0dB (Typ.)@f=12GHz · Lg 0.25µm, Wg = 280µm · Gold Gate Metallization for High Reliability ·
Type
Original
Part Details
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FHX35LG
low noise hemt
transistor hemt
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