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    DSAIHSC000104264.pdf

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    • TOSHIBA MICROWAVE POWER GaAs FET JS 8820-A S Power GaAs FETs (Chip Form) Features • High power - P idB = 36 dBm at f = 6 GHz • High gain - — 8.5 dB at f = 6 GHz • Suitable
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    DSAIHSC000104264.pdf preview Download Datasheet

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