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DSAUD0061764.pdf
Manufacturer
Cree
Partial File Text
PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a
Type
Original
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470PF
CGH40010
CGH40010-TB
CGH40010F
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