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    DASF0029245.pdf

    • Toshiba
    • 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Absolute
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    DASF0029245.pdf preview Download Datasheet

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