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    DSA00428927.pdf

    • Toshiba
    • 2SK3376TK TOSHIBA Field Effect Transistor Silicon N Channel JUNCTION Type 2SK3376TK For ECM 0.22±0.05 Symbol Unit VGDS -20 IG 10 mA Drain power dissipation (Ta = 25°C)
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    DSA00428927.pdf preview Download Datasheet

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