DSADIGA000153752.pdf
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Toshiba
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CUS551V30
Schottky Barrier Diode
Silicon Epitaxial
CUS551V30
1. Applications
â¢
High-Speed Switching
2. Features
(1)
Low forward voltage: VF(3) = 0.38 V (typ.)
(2)
General-pu
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Original
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