DSAZIHA100023979.pdf
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American Microsemiconductor
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1776-1050 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)100ö
V(BR)CBO (V)110
I(C) Max. (A)50
Absolute Max. Power Diss. (W)200
Maximum Operating Temp (øC)175õ
I(CBO) Max. (A)20
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Original
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