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DSA00153654.pdf
Manufacturer
Cree
Partial File Text
CGH60030D 30 W, 6.0 GHz, GaN HEMT Die Cree's CGH60030D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, inclu
Type
Original
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CGH6003
CGH60030D
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